Abstract: A memory device includes memory blocks, a read count storage, a cell counter, and a read reclaim processor. The read count storage stores read count information including read counts of the memory blocks. When a read count of a target block among the memory blocks exceeds at least one threshold count, the cell counter performs a read operation on at least one page among pages included in the target block by using a first read voltage, and calculates a first memory cell count as a number of memory cells read as first memory cells among memory cells included in the at least one page, based on a current sensed from the at least one page in the read operation. The read reclaim processor provides a memory controller with a status code based on the first memory cell count and a number of correctable error bits.

Abstract: A memory device includes a plurality of memory blocks, a read count storage, and a read reclaim processor. The read count storage stores read count information including a read count of each of the plurality of memory blocks. The read reclaim processor provides a memory controller with a status read response including a status code representing a priority order of a read reclaim operation on a target block, in response to a status read command received from the memory controller.

Abstract: A memory system includes a plurality of memory devices configuring a plurality of ways, and a memory controller communicating with the plurality of memory devices through a channel, wherein each of the plurality of memory devices includes a device queue, and wherein the device queue queues a plurality of controller commands inputted from the memory controller.

Abstract: A memory system may include a first memory device including a first input/output buffer, a second memory device including a second input/output buffer, and a cache memory suitable for selectively and temporarily storing first and second data to be respectively programmed in the first and second memory devices. The first data is programmed to the first memory device in a first program section by being stored in the cache memory only in a first monopoly section of the first program section. The second data is programmed to the second memory device in a second program section by being stored in the cache memory only in a second monopoly section of a second program section. The first monopoly section and the second monopoly section are set not to overlap each other.

Abstract: A memory system includes a semiconductor memory device including a memory block; and a scrambler and ECC block configured to generate program data using data received from a host, generate one or more data sets using the program data and page information data, and output the one or more data sets, during a write operation; and a memory controller configured to output the one or more data sets to the semiconductor memory device and to control the semiconductor memory device, wherein the semiconductor memory device is configured to read the page information data stored in each of the plurality of pages and detect, from among the plurality of pages, an erased page or a program-interrupted page in which a sudden power-off (SPO) has occurred during a boot operation.

Abstract: The present technology relates to an electronic device. A memory device having improved memory block management performance according to the present technology includes a memory block, a peripheral circuit, and a control logic. The peripheral circuit performs a read operation and a program operation on a selected physical page among a plurality of physical pages. The control logic controls the peripheral circuit to read first logical page data stored in a first physical page and second logical page data stored in a second physical page among the plurality of physical pages, and additionally program the second logical page data into the first physical page using the read first and second logical page data.

Abstract: Provided herein may be a memory device which is capable of easily performing an update operation of a micro-code stored in the memory device. The memory device may include a first CAM block and a second CAM block, in which a micro-code is stored; and a control logic configured to control the first and second CAM blocks such that the stored micro-code is updated with a new micro-code in a micro-code update operation.

Abstract: Provided herein may be a storage device and a method of operating the same. The storage device may include: a memory device including a memory cell array and a page buffer; and a memory controller including a write buffer. The memory device may further include a page buffer state determiner configured to generate a page buffer state signal based on a state of the page buffer and provide the page buffer state signal to the memory controller. The memory controller may further include a write operation controller configured to provide data provided from a host to either the page buffer or the write buffer in response to the page buffer state signal, and control the memory device to program data stored in the page buffer to the memory cell array based on the state of the write buffer.

Abstract: Provided herein may be a memory system and a method of operating the same. The memory system may include a memory device configured to include a plurality of memory blocks and copy data from victim blocks among the plurality of memory blocks into a target memory block during a garbage collection operation, and a memory controller configured to control the memory device to perform the garbage collection operation, and configured to control the memory device, during the garbage collection operation, to erase the data stored in the victim blocks using a multi-erase method.

Abstract: A memory system includes a semiconductor memory device including a memory block; and a scrambler and ECC block configured to generate program data using data received from a host, generate one or more data sets using the program data and page information data, and output the one or more data sets, during a write operation; and a memory controller configured to output the one or more data sets to the semiconductor memory device and to control the semiconductor memory device, wherein the semiconductor memory device is configured to read the page information data stored in each of the plurality of pages and detect, from among the plurality of pages, an erased page or a program-interrupted page in which a sudden power-off (SPO) has occurred during a boot operation.

Abstract: A storage device for performing a garbage collection operation using a partial block erase operation includes: a memory device including a plurality of main blocks each including a plurality of sub-blocks; and a memory controller configured to perform a garbage collection operation for securing free blocks in which no data is stored, among the main blocks, wherein the memory controller includes a write handler configured to erase at least a portion of a target block, among the main blocks, according to whether an amount of valid data in at least one victim block exceeds a storage capacity of one main block.

Abstract: A memory system includes a semiconductor memory device including a memory block; and a scrambler and ECC block configured to generate program data using data received from a host, generate one or more data sets using the program data and page information data, and output the one or more data sets, during a write operation; and a memory controller configured to output the one or more data sets to the semiconductor memory device and to control the semiconductor memory device, wherein the semiconductor memory device is configured to read the page information data stored in each of the plurality of pages and detect, from among the plurality of pages, an erased page or a program-interrupted page in which a sudden power-off (SPO) has occurred during a boot operation.

Abstract: A storage device for performing a garbage collection operation using a partial block erase operation includes: a memory device including a plurality of main blocks each including a plurality of sub-blocks; and a memory controller configured to perform a garbage collection operation for securing free blocks in which no data is stored, among the main blocks, wherein the memory controller includes a write handler configured to erase at least a portion of a target block, among the main blocks, according to whether an amount of valid data in at least one victim block exceeds a storage capacity of one main block.

Abstract: A memory system includes a status information register configured for checking threshold voltages of select transistors included in memory blocks, storing status information on a check result, and outputting a code based on the status information, a status monitor configured to receive the code from the status information register, determine a number of select transistors that have shifted according to the code, and output status signal based on the number of the select transistors that have shifted, and a central processing unit configured for outputting a setup command set for setting parameters of the memory blocks, outputting a re-program command set for re-programming the select transistors, or outputting a bad block address for processing the memory blocks as bad blocks in response to the status signals.

Abstract: A controller includes: a processor suitable for controlling a memory device to read map data stored in a memory and read out a physical address corresponding to data requested by a host to be read; a counter suitable for obtaining reliability information on the map data stored in the memory; a determining unit suitable for activating a pre-pumping mode when reliability of the map data is poor; a deciding unit suitable for determining a first target die of a pre-pumping operation for reading the data in the activated pre-pumping mode; and a pumping unit suitable for controlling the memory device to perform the pre-pumping operation on the first target die during a background operation for reading out the physical address.

Abstract: The memory device includes: a first CAM block and a second CAM block, in which a micro-code is stored; and a control logic configured to control the first and second CAM blocks such that the stored micro-code is updated with a new micro-code in a micro-code update operation.

Abstract: There are provided a microcontroller, a memory system having the same, and a method for operating the same. A memory system includes: a semiconductor memory performing a scanning operation on ROM data stored in a microcontroller in a test operation and outputting a result of the scanning operation as a status output signal; and a controller for determining whether an error exists in the ROM data, using the status output signal.

Abstract: A memory system includes a semiconductor memory device including a memory block; and a scrambler and ECC block configured to generate program data using data received from a host, generate one or more data sets using the program data and page information data, and output the one or more data sets, during a write operation; and a memory controller configured to output the one or more data sets to the semiconductor memory device and to control the semiconductor memory device, wherein the semiconductor memory device is configured to read the page information data stored in each of the plurality of pages and detect, from among the plurality of pages, an erased page or a program-interrupted page in which a sudden power-off (SPO) has occurred during a boot operation.

Abstract: There are provided a microcontroller, a memory system having the same, and a method for operating the same. A memory system includes: a semiconductor memory performing a scanning operation on ROM data stored in a microcontroller in a test operation and outputting a result of the scanning operation as a status output signal; and a controller for determining whether an error exists in the ROM data, using the status output signal.

Abstract: A storage device for performing a garbage collection operation using a partial block erase operation includes: a memory device including a plurality of main blocks each including a plurality of sub-blocks; and a memory controller configured to perform a garbage collection operation for securing free blocks in which no data is stored, among the main blocks, wherein the memory controller includes a write handler configured to erase at least a portion of a target block, among the main blocks, according to whether an amount of valid data in at least one victim block exceeds a storage capacity of one main block.