Abstract: A memory device includes a memory block including a plurality of pages, a peripheral circuit configured to perform a first program operation for storing first page data and a second program operation for storing second page data after the first program operation, a status register configured to store status information, a cache program operation controller configured to control the peripheral circuit to load the second page data from an external controller when the first program operation is being performed, and a status register controller configured to store in the status register first failure information indicating whether the first program operation passes, store in the status register validity information indicating whether the first failure information is valid information within a predetermined time period from when the second program operation starts, and provide the external controller with the status information including the first failure information and the validity information.

Abstract: According to an embodiment, a semiconductor memory device includes a plurality of memory blocks including first to m-th guarantee blocks, wherein m is an integer greater than 1; repair logic suitable for generating bad block information by detecting defective memory blocks among the first to m-th guarantee blocks, and determining first to m-th offset values respectively corresponding to the first to m-th guarantee blocks based on the bad block information; and an address decoder suitable for generating a block selection address by reflecting an offset value selected from the first to m-th offset values onto a block address when the block address corresponds to any of the first to m-th guarantee blocks, and by reflecting the m-th offset value onto the block address when the block address corresponds to any of the memory blocks except for the first to m-th guarantee blocks.

Abstract: A memory device may include a data receiver configured to receive a plurality of read data chunks from a plurality of memory areas which transmit and receive data through one channel, a data compressor configured to generate a plurality of compressed data chunks from each of the plurality of read data chunks and a data output unit configured to simultaneously output the plurality of compressed data through the channel in response to a data output command.

Abstract: A storage device may include: a memory device for extracting bits having a first logic value among bits included in data received from outside the memory device, generating a plurality of compressed data chunks including the bits comprising the first logic value and position information representing positions of the bits having the first logic value in the data, and outputting the plurality of compressed data chunks in response to a data output command; and a memory controller for receiving the plurality of compressed data chunks from the memory device, and recovering the data, based on the bits having the first logic value, which are included in the plurality of compressed data, and the position information.

Abstract: The present technology relates to a memory device. A memory device according to the present technology includes a memory cell array including a backup block and a data block, a data input/output circuit including a plurality of page buffers that buffer data received from a host, a peripheral circuit configured to perform a program operation of storing the data in the data block, and a backup operation controller configured to control the peripheral circuit to perform a reset operation of stopping the program operation and a backup program operation of storing the data in the backup block when a backup command indicating occurrence of a sudden power off is received from an external controller during the program operation, and the reset operation is an operation of maintaining a state in which the data is buffered in the plurality of page buffers and resetting the peripheral circuit.

Abstract: A storage device including: a peripheral circuit configured to perform a plurality of internal operations corresponding to a plurality of internal operation commands input from the memory controller, a temperature information controller configured to generate a first temperature code corresponding to an internal temperature at a time at which an internal operation corresponding to a first internal operation command among the plurality of internal operation commands is performed and temperature code generation information representing information that the first temperature code has been generated during a set period and a operation controller configured to control the peripheral circuit to perform an internal operation corresponding to a second internal operation command input after the first internal operation command among the plurality of internal operation commands is input, based on the first temperature code and the temperature code generation information, in response to the second internal operation com

Abstract: A memory system includes: a plurality of memory devices including a memory cell array having a plurality of planes, the plurality of memory devices being commonly connected to a memory controller through a channel; a super block including pages included in the planes of at least two memory devices among the plurality of memory devices; and the memory controller for transmitting, to the memory devices, at least one command instructing an operation on the super block and an address corresponding to the command. Each of the memory devices includes: peripheral circuit for performing the operation on the memory cell array; a group selection signal generator for outputting a group selection signal indicating the at least two memory devices constituting the super block; and control logic for controlling the peripheral circuit to perform an operation corresponding to the command, based on the group selection signal.

Abstract: A memory device according to an embodiment includes a plurality of cell strings each including a select transistor and memory cells connected in series, a peripheral circuit configured to apply a verify voltage to the select transistor and perform an internal operation on the memory cells, and control logic configured to control the peripheral circuit to apply an operation voltage for the internal operation. The control logic includes a bad string management component configured to verify threshold voltages of the select transistor and control the peripheral circuit to perform the internal operation on a cell string including a select transistor passed in verification according to a verify result of the select transistor.

Abstract: A memory device includes a memory block including a plurality of pages, a peripheral circuit configured to perform a first program operation for storing first page data and a second program operation for storing second page data after the first program operation, a status register configured to store status information, a cache program operation controller configured to control the peripheral circuit to load the second page data from an external controller when the first program operation is being performed, and a status register controller configured to store in the status register first failure information indicating whether the first program operation passes, store in the status register validity information indicating whether the first failure information is valid information within a predetermined time period from when the second program operation starts, and provide the external controller with the status information including the first failure information and the validity information.

Abstract: The present technology relates to a memory device. A memory device according to the present technology includes a memory cell array including a backup block and a data block, a data input/output circuit including a plurality of page buffers that buffer data received from a host, a peripheral circuit configured to perform a program operation of storing the data in the data block, and a backup operation controller configured to control the peripheral circuit to perform a reset operation of stopping the program operation and a backup program operation of storing the data in the backup block when a backup command indicating occurrence of a sudden power off is received from an external controller during the program operation, and the reset operation is an operation of maintaining a state in which the data is buffered in the plurality of page buffers and resetting the peripheral circuit.

Abstract: A memory device according to an embodiment includes a plurality of cell strings each including a select transistor and memory cells connected in series, a peripheral circuit configured to apply a verify voltage to the select transistor and perform an internal operation on the memory cells, and control logic configured to control the peripheral circuit to apply an operation voltage for the internal operation. The control logic includes a bad string management component configured to verify threshold voltages of the select transistor and control the peripheral circuit to perform the internal operation on a cell string including a select transistor passed in verification according to a verify result of the select transistor.

Abstract: According to an embodiment, a semiconductor memory device includes a plurality of memory blocks including first to m-th guarantee blocks, wherein m is an integer greater than 1; repair logic suitable for generating bad block information by detecting defective memory blocks among the first to m-th guarantee blocks, and determining first to m-th offset values respectively corresponding to the first to m-th guarantee blocks based on the bad block information; and an address decoder suitable for generating a block selection address by reflecting an offset value selected from the first to m-th offset values onto a block address when the block address corresponds to any of the first to m-th guarantee blocks, and by reflecting the m-th offset value onto the block address when the block address corresponds to any of the memory blocks except for the first to m-th guarantee blocks.

Abstract: A storage device including: a peripheral circuit configured to perform a plurality of internal operations corresponding to a plurality of internal operation commands input from the memory controller, a temperature information controller configured to generate a first temperature code corresponding to an internal temperature at a time at which an internal operation corresponding to a first internal operation command among the plurality of internal operation commands is performed and temperature code generation information representing information that the first temperature code has been generated during a set period and a operation controller configured to control the peripheral circuit to perform an internal operation corresponding to a second internal operation command input after the first internal operation command among the plurality of internal operation commands is input, based on the first temperature code and the temperature code generation information, in response to the second internal operation com

Abstract: A memory system includes: a plurality of memory devices including a memory cell array having a plurality of planes, the plurality of memory devices being commonly connected to a memory controller through a channel; a super block including pages included in the planes of at least two memory devices among the plurality of memory devices; and the memory controller for transmitting, to the memory devices, at least one command instructing an operation on the super block and an address corresponding to the command. Each of the memory devices includes: peripheral circuit for performing the operation on the memory cell array; a group selection signal generator for outputting a group selection signal indicating the at least two memory devices constituting the super block; and control logic for controlling the peripheral circuit to perform an operation corresponding to the command, based on the group selection signal.

Abstract: Provided herein is a memory device and a method of operating the same. The memory device may include a CAM block configured to store CAM data required for various operations, a page buffer group configured to store the CAM data read from the CAM block through a CAM read operation, an extra register configured to store extra data generated by performing an operation on the CAM data, an operation logic configured to perform an operation of checking a defect in the extra register, registers configured to sequentially store operation data generated through the defect check operation, a fixed register configured to store fixed data obtained through an operation performed to check an error in the CAM data, and core circuits configured to perform the CAM read operation and transmit the operation data and the CAM data to the extra register, the registers, and the fixed register.

Abstract: Provided herein may be a priority determination circuit and a method of operating the priority determination circuit. The priority determination circuit may receive request signals from a plurality of microcontrollers respectively corresponding to the plurality of planes, and output response signals corresponding to the request signals depending on a determined priority.

Abstract: The memory device includes a content addressable memory (CAM) block including a plurality of pages, peripheral circuits configured to perform a CAM data read operation to read a CAM data comprising a plurality of check data each indicating whether bad block information is included in a region of the CAM data from a page sequentially selected among the plurality of pages, a CAM data read controller configured to perform a CAM data load operation to receive the CAM data from the peripheral circuits and output the CAM data to an external memory controller, and stop the CAM data load operation based on at least one check data among the plurality of check data included in the CAM data.

Abstract: Provided herein is a memory device and a method of operating the same. The memory device may include a CAM block configured to store CAM data required for various operations, a page buffer group configured to store the CAM data read from the CAM block through a CAM read operation, an extra register configured to store extra data generated by performing an operation on the CAM data, an operation logic configured to perform an operation of checking a defect in the extra register, registers configured to sequentially store operation data generated through the defect check operation, a fixed register configured to store fixed data obtained through an operation performed to check an error in the CAM data, and core circuits configured to perform the CAM read operation and transmit the operation data and the CAM data to the extra register, the registers, and the fixed register.

Abstract: Provided herein may be a priority determination circuit and a method of operating the priority determination circuit. The priority determination circuit may receive request signals from a plurality of microcontrollers respectively corresponding to the plurality of planes, and output response signals corresponding to the request signals depending on a determined priority.

Abstract: The present technology relates to a memory device, a memory system including the same, and a method of operating the memory system. The memory device includes a cam block including a plurality of pages, peripheral circuits configured to read a cam data of a page unit that is stored in a selected page among the plurality of pages of the cam block during a cam data read operation, a cam data read controller configured to receive the read cam data of the page unit from the peripheral circuits during a cam data load operation and configured to output the received cam data of the page unit as output cam data, and a control logic configured to control the peripheral circuits to perform the cam data read operation and the cam data load operation. The cam data read controller stops the cam data load operation based on a check data that is included in the read cam data of the page unit.