Abstract: A ventilation apparatus may include a vehicle seat, wherein the vehicle seat is configured by a seat cushion and a seat back, wherein the seat back is configured by a metal frame, a back board, and a skirt to eject air to the vehicle seat using a cushion duct and a back duct which are varied in length by a connection duct without a change in cross-sectional area of an internal passage through which air passes along the movement of the seat cushion therein, and the back duct and the cushion duct are connected to the skirt by a fixing means while a portion of the back duct and a portion of the cushion duct are covered by the connection duct.

Abstract: A moveable seat control apparatus with an automatically chargeable battery, may include a seat including a moving motor engaged to the seat and configured to selectively move the seat along a rail, a battery positioned below the seat, and configured to receive power to perform charge, and to supply the charged power, a controller positioned below the seat and connected to the battery, and configured to monitor a state of charge (SOC) value of the battery to generate SoC information, and to control the moving motor to move the seat to a charge position when the SoC is equal to or less than a predetermined SoC, and a charger connected to the battery and coupled to a power supply terminal to receive the power and to charge the battery.

Abstract: A system and method of charging a battery of a seat in which a seat battery for supplying power to an additional device as well as movement of the position of the seat is positioned in the seat, and thus, even if the position of the seat is changed, it is possible to supply continuous power to an additional device included in the seat. In addition, the position of the seat is moved to charge the seat battery, and the seat battery provided in the seat is charged in consideration of whether the passenger sits on the seat, the state of charge of the battery of the vehicle, or the like, thereby smoothly charging the seat battery.

Abstract: A seat apparatus for a vehicle is provided, wherein a base bracket and a moving bracket are mounted to a body floor to lift and lower a seat, and a seat track is mounted to the moving bracket to move the seat in forward and rearward directions, so that the seat is moved and lifted and lowered. Accordingly, since the lifting/lowering structure of the seat is mounted to the body floor, space is secured below the seat, so indoor atmosphere is improved due to the increase of the space efficiency.

Abstract: A side extension device for a seat of a vehicle, may include a seat cushion frame for forming a framework, a cushion pad provided with a bolster formed on each of opposite sides thereof, and a seat cover for covering a surface of the cushion pad, wherein a plurality of slits is formed in the bolster of the cushion pad, and divided bolster parts are formed between the slits, wherein the divided bolster parts are successively inclined outward by contact pressure of side parts of hips of an occupant, so that the bolster spreads outward.

Abstract: A seat ventilation blower may include a first housing; a second housing coupled and assembled to the first housing; an impeller inserted inside the first housing or the second housing, the impeller configured to rotate; and a circuit board body having a motor assembly coupled to the impeller to rotate the impeller wherein the circuit board body is configured to control operation of the motor assembly and installed in the housing when the first and second housings are coupled and assembled together.

Abstract: A side extension device for a seat of a vehicle, may include a seat cushion frame for forming a framework, a cushion pad provided with a bolster formed on each of opposite sides thereof, and a seat cover for covering a surface of the cushion pad, wherein a plurality of slits is formed in the bolster of the cushion pad, and divided bolster parts are formed between the slits, wherein the divided bolster parts are successively inclined outward by contact pressure of side parts of hips of an occupant, so that the bolster spreads outward.

Abstract: A height adjustment apparatus for a vehicle seat may include a pinion gear mounted in a side frame having a front portion and a rear portion are connected to a seat bracket by links; a rack gear engaged with a top end of the pinion gear and coupled with the seat bracket via an hinge, the rack gear moving according to driving of the pinion gear to raise and lower the side frame; and a play adjustment bracket for guiding up and down motion of the moving rack gear by providing repulsive force to a top portion of the rack gear, the play adjustment bracket being fixedly positioned by being fastened with a plurality of support pins provided in the pinion gear and the side frame.

Abstract: A height adjustment apparatus for a vehicle seat may include a pinion gear mounted in a side frame having a front portion and a rear portion are connected to a seat bracket by links; a rack gear engaged with a top end of the pinion gear and coupled with the seat bracket via an hinge, the rack gear moving according to driving of the pinion gear to raise and lower the side frame; and a play adjustment bracket for guiding up and down motion of the moving rack gear by providing repulsive force to a top portion of the rack gear, the play adjustment bracket being fixedly positioned by being fastened with a plurality of support pins provided in the pinion gear and the side frame.

Abstract: A seat latch structure is provided, which includes a base bracket mounted on a seat for a vehicle and having a first insertion hole and a second insertion hole formed thereon and an opening which is formed on one side thereof and into which a striker fixed to a vehicle body is inserted, a claw having a first through-hole formed thereon to correspond to the first insertion hole and a locking groove formed on one side thereof, a pawl provided on one side of the claw and having a second through-hole formed thereon to correspond to the second insertion hole, a first rotating shaft and a second rotating shaft inserted into the first through-hole of the claw and the second through-hole of the pawl, respectively, and a double torsion spring connecting the first through-hole and the second through-hole into which the first rotating shaft and the second rotating shaft are inserted, respectively.

Abstract: A seat latch structure is provided, which includes a base bracket mounted on a seat for a vehicle and having a first insertion hole and a second insertion hole formed thereon and an opening which is formed on one side thereof and into which a striker fixed to a vehicle body is inserted, a claw having a first through-hole formed thereon to correspond to the first insertion hole and a locking groove formed on one side thereof, a pawl provided on one side of the claw and having a second through-hole formed thereon to correspond to the second insertion hole, a first rotating shaft and a second rotating shaft inserted into the first through-hole of the claw and the second through-hole of the pawl, respectively, and a double torsion spring connecting the first through-hole and the second through-hole into which the first rotating shaft and the second rotating shaft are inserted, respectively.

Abstract: A seatback frame for vehicles has a lower cross member that prevents a back pad and a recliner hinge shaft from interfering with each other. The seatback frame includes a back frame and a lower cross member. The lower cross member includes a reinforcing part and a hinge-shaft cover. The back frame is hinged to a seat frame via a recliner hinge shaft. The lower cross member couples both sides of the lower end of the back frame to each other. The reinforcing part has the shape of an embossment which extends in a longitudinal direction of the lower cross member. The hinge-shaft cover is provided on the lower portion of the lower cross member, and is bent to surround the recliner hinge shaft.

Abstract: Provided is a method of manufacturing a semiconductor device, by which a cell transistor formed on a cell array area of a semiconductor substrate employs a structure in which an electrode in the shape of spacers is used to form a gate and a multi-bit operation is possible using localized bits, and transistors having structures optimized to satisfy different requirements depending upon functions of the transistors can be formed on a peripheral circuit area which is the residual area of the semiconductor substrate. In this method, a cell transistor is formed on the cell array area.

Abstract: A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.

Abstract: A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.

Abstract: A nonvolatile memory device includes a semiconductor substrate of a first conductivity type, a plurality of word lines on the semiconductor substrate, each the plurality of word lines including a floating gate of a second conductivity type. A ground select line and a string select line are disposed on respective sides of word lines. An impurity region of the second conductivity type underlies a first word line adjacent the ground select line. The device may further include a second impurity region of the second conductivity type underlying a second word line adjacent the string select line. In still further embodiments, the device may further include third impurity regions of the second conductivity type underlying respective third word lines between the first word line and the second word line. Methods of forming such devices are also provided.

Abstract: In a method of manufacturing a non-volatile memory device, a conductive structure is formed on a substrate. The conductive structure includes a tunnel oxide pattern, a first conductive pattern, a pad oxide pattern and a hard mask pattern. A trench is formed on the substrate using the conductive structure as an etching mask. An inner oxide layer is formed on an inner wall of the trench and sidewalls of the tunnel oxide pattern and the first conductive pattern. The inner oxide layer is cured, thereby forming a silicon nitride layer on the inner oxide layer. A device isolation pattern is formed in the trench, and the hard mask pattern and the pad oxide pattern are removed from the substrate. A dielectric layer and a second conductive pattern are formed on the substrate. Accordingly, the silicon nitride layer prevents hydrogen (H) atoms from leaking into the device isolation pattern.

Abstract: Integrated circuit nonvolatile memory devices are manufactured by forming a variable resistance layer on an integrated circuit substrate. The variable resistance layer includes grains that define grain boundaries between the grains. Conductive filaments are formed along at least some of the grain boundaries. Electrodes are formed on the variable resistance layer. The conductive filaments may be formed by implanting conductive ions into at least some of the grain boundaries. Moreover, the variable resistance layer may be a variable resistance oxide of a metal, and the conductive filaments may be the metal. Related devices are also disclosed.

Abstract: A non-volatile memory device for 2-bit operation and a method of fabricating the same are provided. The non-volatile memory device includes an active region and a gate extending in a word line direction on a semiconductor substrate, and crossing each other repeatedly; a charge storage layer disposed below the gate, and confined at a portion where the gate and the active region cross; a charge blocking layer formed on the charge storage layer; a tunnel dielectric layer formed below the charge storage layer; first and second source/drain regions formed in the active region exposed by the gate; and first and second bit lines crossing the word line direction. The active region may be formed in a first zigzag pattern and/or the gate may be formed in a second zigzag pattern in symmetry with the first zigzag pattern.

Abstract: A non-volatile memory device includes a substrate having a recess thereon, a resistant material layer pattern in the recess, a lower electrode on the resistant material layer pattern in the recess, a dielectric layer, and an upper electrode formed on the dielectric layer. The resistant material layer pattern includes a material whose resistance varies according to an applied voltage. The dielectric layer is formed on the substrate, the resistant material layer pattern and the lower electrode. An upper electrode overlaps the resistant material layer pattern and the lower electrode. The applied voltage is applied to access the upper and lower electrodes to vary the resistance of the resistant material layer pattern.