Abstract: Provided is a gate driving circuit. The gate driving circuit includes a plurality of first transistors; wherein at least one first target transistor of the plurality of first transistors includes a first light-shielding layer disposed on a side of a base substrate, the first light-shielding layer being made of a conductive material; and a first gate metal layer and a first source/drain metal layer disposed on a side of the first light-shielding layer away from the base substrate; wherein the first light-shielding layer is connected to the first gate metal layer.

Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.

Abstract: A display substrate is provided, including: pixel units on a base substrate; and a first conductive layer, a buffer layer, a semiconductor layer, a first insulation layer, and a second conductive layer which are arranged on the base substrate in a direction away from the base substrate. The display substrate further includes at least one conductive via hole passing through at least the first insulation layer, and at least one conductive plug through which the second conductive portion is electrically connected to the first conductive portion. The first conductive portion includes first and second conductive sub-portions, an orthographic projection of the first conductive sub-portion on the base substrate at least partially overlaps with that of the at least one conductive via hole on the base substrate, and in a third direction, a thickness of the first conductive sub-portion is greater than that of the second conductive sub-portion.

Abstract: The present disclosure provides a display substrate, a manufacturing method and a display device. The display substrate includes a base substrate, a driving circuit layer and a light-emitting unit. The driving circuit layer includes a source/drain metal layer, the source/drain metal layer includes a source electrode, a drain electrode and an auxiliary electrode, the light-emitting unit includes a first electrode structure, a light-emitting layer and a second electrode structure, the display substrate further includes an auxiliary connection structure and a protection hole, an orthogonal projection of the auxiliary connection structure onto the base substrate is located within an orthogonal projection of the protection hole onto the base substrate, and a distance between a surface of the auxiliary connection structure away from the base substrate and the base substrate is less than a distance between a surface of the planarization layer away from the base substrate and the base substrate.

Abstract: A display panel includes a substrate, a driving layer and a light-emitting control layer. The driving layer is provided with a plurality of driving transistors arranged into a plurality of transistor rows in a column direction. The light-emitting control layer includes a plurality of light-emitting devices arranged into a plurality of device rows in the column direction, the device rows is spaced apart by the transistor row in the column direction, and the transistor rows is spaced apart by the device row in the column direction. The pixel-defining layer is provided with a plurality of blocking grooves recessed toward the substrate, the plurality of blocking grooves are arranged in the column direction, at least one of the plurality of blocking grooves is arranged between the transistor row and the device row adjacent in the column direction, and a light-shielding layer is arranged in the blocking groove.

Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.

Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.

Abstract: A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.

Abstract: The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. The display substrate includes a first conductive line extending in a first direction on a base substrate, a second conductive line extending in a second direction crossing the first direction on the base substrate, and an insulation layer arranged between the first conductive line and the second conductive line. The display substrate further includes a buffer layer arranged between the first conductive line and the base substrate, a groove extending in the first direction is formed in the buffer layer, the first conductive line is arranged in the groove, and a surface of the first conductive line away from the base substrate is flush with a surface of the buffer layer away from the base substrate.

Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.

Abstract: The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.

Abstract: A method of manufacturing a display substrate includes: providing a base substrate; and forming a base insulating layer, a first conductive layer and an interlayer insulating layer that are sequentially stacked on top of one another at a side of the base substrate. The first conductive layer includes at least one break face, the base insulating layer includes a portion extending outward with respect to each of the at least one break face, and the break face and the corresponding portion extending outward constitute an unevenness portion having a stepped shape. The interlayer insulating layer covers at least the unevenness portion(s). Forming the interlayer insulating layer, includes: forming a first insulating sub-layer and a second insulating sub-layer that are sequentially stacked on top of one another; and forming one of the first insulating sub-layer and the second insulating sub-layer by curing a flowable insulating material.

Abstract: Provided are a gate driving circuit and a manufacturing method therefor, an array substrate, and a display device, relating to the technical field of display. At least one transistor in the gate driving circuit comprises a first light-shielding layer made of an electrically conductive material, and the first light-shielding layer is connected to a first gate metal layer of the transistor, such that two electrically conductive channels are formed, and the ON-state current is increased, thereby effectively suppressing negative drift of a threshold voltage.

Abstract: A display substrate, a method for manufacturing the same, and a display device are provided, belonging to the technical field of display. The display substrate includes: a base substrate; a thin film transistor on the base substrate, the thin film transistor including an active layer and a gate electrode on one side of the active layer away from the base substrate, an orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the active layer on the base substrate; and a conductive pattern arranged on a layer different from the gate electrode, the conductive pattern and the gate electrode being separated by an insulating layer, the orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the conductive pattern on the base substrate. The technical solution of the present disclosure can improve the yield of OLED display substrates.

Abstract: This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.

Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.

Abstract: A manufacturing method of a flexible electronic substrate and a substrate structure are disclosed. The manufacturing method includes: providing a first substrate comprising a first surface and a second surface which are opposite; forming a separation layer on the first surface of the first substrate, the separation layer being in a film form; providing a second substrate on the separation layer, the second substrate being configured as a flexible substrate; and processing the separation layer, such that at least a part of the separation layer is cracked from the film form, thereby separating the second substrate from the first substrate.

Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.

Abstract: The present disclosure provides a pixel unit, a method of manufacturing the same, and an array substrate. The pixel unit includes: a driving transistor, a switching transistor, and a light emitting element on a substrate; wherein the driving transistor has an input electrode electrically connected to a first power supply terminal and an output electrode electrically connected to a first terminal of the light emitting element; the switching transistor has an input electrode electrically connected to a data line, a control electrode electrically connected to a scan line, and an output electrode electrically connected to a gate electrode of the driving transistor; wherein the switching transistor and the driving transistor have different threshold voltages.

Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.