Patents by Inventor Ce Zhao

Ce Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200035716
    Abstract: The present disclosure is in the field of display technologies, and provides an array substrate including an IGZO film layer, a gate layer, and a gate insulating layer. The gate layer is provided with broken lines at a position thereof overlapping the IGZO film layer to form a first gate line and a second gate line. The gate insulating layer is disposed between the IGZO film layer and the gate layer, and is provided with at least two through holes thereon, in which the first gate line is connected with the IGZO film layer through one of the through holes, and the second gate line is connected with the IGZO film layer through another through hole, thus, connecting the IGZO film layer in series into the gate layer.
    Type: Application
    Filed: April 28, 2019
    Publication date: January 30, 2020
    Inventors: Bin ZHOU, Binbin CAO, Liangchen YAN, Dongfang WANG, Ce ZHAO, Luke DING, Jun LIU
  • Publication number: 20200035767
    Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
    Type: Application
    Filed: June 10, 2019
    Publication date: January 30, 2020
    Inventors: Wei Song, Liangchen Yan, Ce Zhao, Dongfang Wang, Bin Zhou, Yuankui Ding, Jun Liu, Yingbin Hu, Wei Li
  • Publication number: 20200035721
    Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
    Type: Application
    Filed: May 29, 2018
    Publication date: January 30, 2020
    Inventors: Tongshang Su, Guangcai Yuan, Dongfang Wang, Ce Zhao, Bin Zhou, Jun Liu, Jifeng Shao, Qinghe Wang, Yang Zhang
  • Publication number: 20200013867
    Abstract: The present disclosure provides a thin film transistor, including a base substrate, an active layer and a source/drain, and a conductive layer. The active layer and an outer edge of the conductive layer are formed in the same etching process. The present disclosure further provides a method for manufacturing a thin film transistor, including forming an active material layer and a conductive material layer, forming a photoresist on the conductive material layer, exposing and developing the photoresist by means of a halftone mask, removing segments of the active material layer and the conductive material layer corresponding to a photoresist completely-removed region by a same etching process, partially removing the photoresist in a photoresist completely-retained region and completely removing the photoresist in a photoresist partially-retained region, and removing a segment of the conductive material layer corresponding to the photoresist partially-retained region.
    Type: Application
    Filed: April 29, 2019
    Publication date: January 9, 2020
    Inventors: Tongshang SU, Dongfang Wang, Ce Zhao, Bin Zhou, Liangchen Yan
  • Publication number: 20190386144
    Abstract: A thin film transistor (TFT), a manufacturing method, an array substrate, a display panel, and a device is disclosed. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.
    Type: Application
    Filed: August 29, 2019
    Publication date: December 19, 2019
    Inventors: Yuankui DING, Ce ZHAO, Guangcai YUAN, Yingbin HU, Leilei CHENG, Jun CHENG, Bin ZHOU
  • Publication number: 20190371867
    Abstract: A display panel, a method for manufacturing the display panel, and a display apparatus are provided. The display panel includes a base substrate; a thin film transistor; an OLED structure formed on the thin film transistor including a first and second electrodes arranged opposite to each other and an organic light emitting layer arranged between the first and second electrodes; a light shielding layer arranged between the first electrode and the organic light emitting layer. The light shielding layer includes a first and a second light shielding layers. The first light shielding layer includes a first light shielding portion and a first opening portion corresponding to a pixel area. The second light shielding layer includes a second light shielding portion and a second opening portion corresponding to a pixel area. The second light shielding portion includes a first and second parts.
    Type: Application
    Filed: January 31, 2019
    Publication date: December 5, 2019
    Inventors: Yongchao HUANG, Dongfang WANG, Jun CHENG, Min HE, Bin ZHOU, Ce ZHAO
  • Patent number: 10490669
    Abstract: The present disclosure discloses a TFT, a manufacturing method, an array substrate, a display panel, and a device. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: November 26, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Yuankui Ding, Ce Zhao, Guangcai Yuan, Yingbin Hu, Leilei Cheng, Jun Cheng, Bin Zhou
  • Patent number: 10439163
    Abstract: An organic light emitting diode (OLED) display panel and a manufacture method thereof, a display device are disclosed. The method includes providing a base substrate, including a display area and a package area; forming a driving transistor, a passivation layer and an OLED display unit on the base substrate, wherein the OLED display unit and the driving transistor are formed in the display area, the passivation layer is formed in both the display area and the package area and includes a plurality of recesses in the package area and a via hole in the display area, and the via hole and the plurality of recesses are formed by same one patterning process; coating a sealant in the package area to cover the plurality of recesses; and providing a package substrate, the package substrate and the base substrate being assembled together and sealed oppositely by the sealant.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: October 8, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Tongshang Su, Guangcai Yuan, Dongfang Wang, Bin Zhou, Ce Zhao, Jun Liu, Ning Liu, Kai Xu, Shengping Du
  • Publication number: 20190221588
    Abstract: The present disclosure relates to an array substrate and a method for manufacturing the same. The array substrate includes a thin film transistor and comprises at least a first region and a second region. A thickness of an active layer of the thin film transistor in the first region is different from that of an active layer of the thin film transistor in the second region. A ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region.
    Type: Application
    Filed: June 23, 2017
    Publication date: July 18, 2019
    Inventors: Tongshang Su, Jun Cheng, Ce Zhao, Bin Zhou, Dongfang Wang, Guangcai Yuan
  • Publication number: 20190172953
    Abstract: The present disclosure discloses a TFT, a manufacturing method, an array substrate, a display panel, and a device. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.
    Type: Application
    Filed: May 30, 2018
    Publication date: June 6, 2019
    Inventors: Yuankui DING, Ce ZHAO, Guangcai YUAN, Yingbin HU, Leilei CHENG, Jun CHENG, Bin ZHOU
  • Publication number: 20190157308
    Abstract: A method of manufacturing an array substrate assembly, an array substrate assembly manufactured by the method, and a display panel including the array substrate assembly are disclosed. The method includes: providing a substrate, the substrate having a first region as a preset semiconductor-removed region, and a second region as a remaining region; forming, in the first region of the substrate, a semiconductor removing layer corrodible by a corrosive solution; and forming a semiconductor layer on the substrate formed with the semiconductor removing layer, so that the semiconductor layer covers the semiconductor removing layer.
    Type: Application
    Filed: July 9, 2018
    Publication date: May 23, 2019
    Inventors: Yuankui Ding, Guangcai Yuan, Ce Zhao, Bin Zhou, Jun Cheng, Zhaofan Liu, Yingbin Hu, Yongchao Huang
  • Patent number: 10217955
    Abstract: A method for manufacturing a display panel, and a display device are disclosed. The method for manufacturing a display panel includes: providing a TFT substrate; dispersing graphene and metal nanowires in a hydrophilic solvent to form a hydrophilic conductive ink; applying the hydrophilic conductive ink onto the TFT substrate to form a composite electrode layer; forming, on the composite electrode layer, a pixel defining layer having a plurality of openings at least partially exposing the composite electrode layer; applying hydrophilic organic ink into the plurality of openings of the pixel defining layer to form an organic layer; drying the composite electrode layer and the organic layer to form a first electrode and an organic light emitting structure; and forming a second electrode on the organic light emitting structure and the pixel defining layer.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: February 26, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Leilei Cheng, Jun Bao, Dongfang Wang, Ce Zhao
  • Publication number: 20180331320
    Abstract: An organic light emitting diode (OLED) display panel and a manufacture method thereof, a display device are disclosed. The method includes providing a base substrate, including a display area and a package area; forming a driving transistor, a passivation layer and an OLED display unit on the base substrate, wherein the OLED display unit and the driving transistor are formed in the display area, the passivation layer is formed in both the display area and the package area and includes a plurality of recesses in the package area and a via hole in the display area, and the via hole and the plurality of recesses are formed by same one patterning process; coating a sealant in the package area to cover the plurality of recesses; and providing a package substrate, the package substrate and the base substrate being assembled together and sealed oppositely by the sealant.
    Type: Application
    Filed: October 13, 2017
    Publication date: November 15, 2018
    Inventors: Tongshang SU, Guangcai YUAN, Dongfang WANG, Bin ZHOU, Ce ZHAO, Jun LIU, Ning LIU, Kai XU, Shengping DU
  • Publication number: 20180315961
    Abstract: The present disclosure provides a method for manufacturing an organic electroluminescence device, including steps of: adjusting a grating period of a periodic grating structure in such a manner that a wavelength of an emergent light beam caused by SP-coupling is within a predetermined range of a light-emission peak of the organic electroluminescence device; and forming the periodic grating structure in the organic electroluminescence device in accordance with the obtained grating period by adjustment.
    Type: Application
    Filed: November 2, 2017
    Publication date: November 1, 2018
    Inventors: Jun Wang, Ce Zhao, Dongfang Wang, Bin Zhou
  • Publication number: 20180308914
    Abstract: A method for manufacturing a display panel, and a display device are disclosed. The method for manufacturing a display panel includes: providing a TFT substrate; dispersing graphene and metal nanowires in a hydrophilic solvent to form a hydrophilic conductive ink; applying the hydrophilic conductive ink onto the TFT substrate to form a composite electrode layer; forming, on the composite electrode layer, a pixel defining layer having a plurality of openings at least partially exposing the composite electrode layer; applying hydrophilic organic ink into the plurality of openings of the pixel defining layer to form an organic layer; drying the composite electrode layer and the organic layer to form a first electrode and an organic light emitting structure; and forming a second electrode on the organic light emitting structure and the pixel defining layer.
    Type: Application
    Filed: November 16, 2017
    Publication date: October 25, 2018
    Inventors: Leilei CHENG, Jun BAO, Dongfang WANG, Ce ZHAO
  • Patent number: 10079352
    Abstract: Embodiments of the present disclosure provide a manufacturing method for a flexible device and a flexible display device. The manufacturing method for a flexible device comprises: step S1, forming an organosiloxane layer on a supporting substrate; step S2, forming a flexible substrate on the organosiloxane layer; step S3, forming a display device on the flexible substrate; step S4, performing an oxidation treatment on a surface of the organosiloxane layer that contacts the supporting substrate such that a silicon dioxide layer is formed between the organosiloxane layer and the supporting substrate; and step S5, peeling off the supporting substrate from the silicon dioxide layer.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: September 18, 2018
    Assignees: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Leilei Cheng, Yuankui Ding, Dongfang Wang, Ce Zhao
  • Patent number: 9960189
    Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: May 1, 2018
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Ce Zhao, Chunsheng Jiang, Guangcai Yuan
  • Publication number: 20170207402
    Abstract: Embodiments of the present disclosure provide a manufacturing method for a flexible device and a flexible display device. The manufacturing method for a flexible device comprises: step S1, forming an organosiloxane layer on a supporting substrate; step S2, forming a flexible substrate on the organosiloxane layer; step S3, forming a display device on the flexible substrate; step S4, performing an oxidation treatment on a surface of the organosiloxane layer that contacts the supporting substrate such that a silicon dioxide layer is formed between the organosiloxane layer and the supporting substrate; and step S5, peeling off the supporting substrate from the silicon dioxide layer.
    Type: Application
    Filed: July 5, 2016
    Publication date: July 20, 2017
    Inventors: Leilei CHENG, Yuankui DING, Dongfang WANG, Ce ZHAO
  • Publication number: 20170162604
    Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.
    Type: Application
    Filed: February 17, 2017
    Publication date: June 8, 2017
    Inventors: Ce Zhao, Chunsheng Jiang, Guangcai Yuan
  • Patent number: 9614098
    Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first, second, and third pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: April 4, 2017
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Ce Zhao, Chunsheng Jiang, Guangcai Yuan