Patents by Inventor Ce Zhao

Ce Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11444128
    Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: September 13, 2022
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Dongfang Wang, Tongshang Su, Ming Wang, Ce Zhao, Bin Zhou
  • Patent number: 11430816
    Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: August 30, 2022
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ming Wang, Ce Zhao, Wei Song
  • Patent number: 11404515
    Abstract: A display substrate and a manufacturing method thereof, and a display device, are disclosed. The display substrate includes a base substrate and a thin film transistor (TFT) array, including a plurality of TFTs. A first electrode in each TFT includes a first portion and a second portion, a height of the second portion being greater than a height of the first portion in a direction perpendicular to the base substrate, wherein the first portion forms a groove with respect to the second portion and a wall of the groove comprises the second portion of the first electrode of a thin film transistor adjacent to the TFT. A bottom of the groove is the first pixel electrode of a light emitting element, wherein an organic light emitting functional layer is deposited in the groove on the first pixel electrode, and the second pixel electrode on the organic light emitting functional layer.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: August 2, 2022
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD..
    Inventors: Wei Song, Ce Zhao, Yuankui Ding, Heekyu Kim, Ming Wang, Ning Liu, Yingbin Hu
  • Patent number: 11367792
    Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: June 21, 2022
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD, BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Song, Liangchen Yan, Ce Zhao, Heekyu Kim, Yuankui Ding, Leilei Cheng, Yingbin Hu, Wei Li, Guangyao Li, Qinghe Wang
  • Patent number: 11355647
    Abstract: A thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a conductive region and the conductive region is between the source electrode and the drain electrode and is spaced apart from at least one of the source electrode and the drain electrode.
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: June 7, 2022
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Yingbin Hu, Ce Zhao, Dongfang Wang, Bin Zhou, Jun Liu, Yuankui Ding, Wei Li
  • Patent number: 11342459
    Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: May 24, 2022
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Luke Ding, Zhanfeng Cao, Jingang Fang, Liangchen Yan, Ce Zhao, Dongfang Wang
  • Patent number: 11329115
    Abstract: The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: May 10, 2022
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD, BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Song, Liangchen Yan, Ce Zhao, Heekyu Kim, Yuankui Ding, Leilei Cheng, Yingbin Hu, Wei Li, Yang Zhang
  • Patent number: 11315783
    Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.
    Type: Grant
    Filed: February 20, 2019
    Date of Patent: April 26, 2022
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Yuankui Ding, Heekyu Kim, Liangchen Yan, Ce Zhao, Bin Zhou, Yingbin Hu, Wei Song, Dongfang Wang
  • Patent number: 11309428
    Abstract: The present disclosure provides a transistor and a manufacturing method thereof, a display substrate and a display device. The transistor includes: a base structure; an active layer on the base structure; and a gate electrode, a source electrode and a drain electrode that are all located on a side of the active layer distal to the base structure. The active layer includes a first region corresponding to an orthographic projection of the gate electrode on the base structure and a second region outside the orthographic projection. A surface of the base structure in contact with the active layer in the first region is not in the same plane as a surface of the base structure in contact with the active layer in the second region. The active layer in the first region has substantially the same thickness as a thickness of the active layer in the second region.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: April 19, 2022
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Song, Ce Zhao, Yuankui Ding, Ming Wang, Jun Liu, Yingbin Hu, Wei Li, Liusong Ni
  • Patent number: 11287333
    Abstract: A pressure sensing unit includes: a first substrate and a second substrate opposite to each other; and at least one vertical thin film transistor disposed between the first substrate and the second substrate. Each vertical thin film transistor includes a first electrode, a semiconductor active layer, a second electrode, at least one insulating support, and a gate electrode sequentially disposed in a direction extending from the first substrate to the second substrate. A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: March 29, 2022
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Qinghe Wang, Dongfang Wang, Bin Zhou, Ce Zhao, Tongshang Su, Leilei Cheng, Yang Zhang, Guangyao Li
  • Publication number: 20210402753
    Abstract: A manufacturing method of a flexible electronic substrate and a substrate structure are disclosed. The manufacturing method includes: providing a first substrate comprising a first surface and a second surface which are opposite; forming a separation layer on the first surface of the first substrate, the separation layer being in a film form; providing a second substrate on the separation layer, the second substrate being configured as a flexible substrate; and processing the separation layer, such that at least a part of the separation layer is cracked from the film form, thereby separating the second substrate from the first substrate.
    Type: Application
    Filed: May 21, 2019
    Publication date: December 30, 2021
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Ce ZHAO
  • Publication number: 20210359140
    Abstract: A thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a conductive region and the conductive region is between the source electrode and the drain electrode and is spaced apart from at least one of the source electrode and the drain electrode.
    Type: Application
    Filed: August 17, 2018
    Publication date: November 18, 2021
    Applicants: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Yingbin Hu, Ce Zhao, Dongfang Wang, Bin Zhou, Jun Liu, Yuankui Ding, Wei Li
  • Publication number: 20210343799
    Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.
    Type: Application
    Filed: September 20, 2018
    Publication date: November 4, 2021
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Dongfang WANG, Tongshang SU, Ming WANG, Ce ZHAO, Bin ZHOU
  • Publication number: 20210335604
    Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.
    Type: Application
    Filed: February 20, 2019
    Publication date: October 28, 2021
    Applicants: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Yuankui Ding, Heekyu Kim, Liangchen Yan, Ce Zhao, Bin Zhou, Yingbin Hu, Wei Song, Dongfang Wang
  • Publication number: 20210335950
    Abstract: The present disclosure provides a pixel unit, a method of manufacturing the same, and an array substrate. The pixel unit includes: a driving transistor, a switching transistor, and a light emitting element on a substrate; wherein the driving transistor has an input electrode electrically connected to a first power supply terminal and an output electrode electrically connected to a first terminal of the light emitting element; the switching transistor has an input electrode electrically connected to a data line, a control electrode electrically connected to a scan line, and an output electrode electrically connected to a gate electrode of the driving transistor; wherein the switching transistor and the driving transistor have different threshold voltages.
    Type: Application
    Filed: September 21, 2018
    Publication date: October 28, 2021
    Inventors: Dongfang Wang, Bin Zhou, Ce Zhao, Tongshang Su, Yuankui Ding, Ming Wang
  • Publication number: 20210335946
    Abstract: The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.
    Type: Application
    Filed: March 22, 2019
    Publication date: October 28, 2021
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Song, Liangchen Yan, Ce Zhao, Heekyu Kim, Yuankui Ding, Leilei Cheng, Yingbin Hu, Wei Li, Yang Zhang
  • Publication number: 20210327987
    Abstract: A display substrate, a method for manufacturing the same, and a display device are provided. The display substrate includes: a base substrate, and a conductive layer and a passivation layer which are stacked on the base substrate. The display substrate has a peripheral region and a capacitor region, the conductive layer is located in the peripheral region, the conductive layer is used for electrically connecting with an external driving circuit in the display device, a thickness of a part of the passivation layer in the capacitor region is less than a thickness of a part of the passivation layer in the peripheral region, and the capacitor region is provided with a capacitor that charges a pixel unit in the display substrate.
    Type: Application
    Filed: May 6, 2019
    Publication date: October 21, 2021
    Inventors: Jingang Fang, Jun Cheng, Ce Zhao, Luke Ding, Ning Liu
  • Publication number: 20210305337
    Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
    Type: Application
    Filed: June 14, 2021
    Publication date: September 30, 2021
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Song, Liangchen Yan, Ce Zhao, Dongfang Wang, Bin Zhou, Yuankui Ding, Jun Liu, Yingbin Hu, Wei Li
  • Publication number: 20210296368
    Abstract: Provided are a display substrate and a manufacturing method therefor, and a display panel and a display apparatus. The gate insulation layer included in the display substrate comprises a first branch portion located between the gate electrode and the active layer, and a second branch portion located below an overlapping region of the first routing and the second routing; a part, extending out of the gate electrode, of the first branch portion has a first width value; at the overlapping region between the second routing and the first routing, a part, extending out of the first routing, of the second branch portion has a second width value; and the first width value is greater than the second width value.
    Type: Application
    Filed: June 15, 2020
    Publication date: September 23, 2021
    Inventors: Wei SONG, Ce ZHAO, Yuankui DING, Ming WANG, Ning LIU, Yingbin HU, Junlin PENG, Liusong NI
  • Publication number: 20210288283
    Abstract: A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.
    Type: Application
    Filed: May 27, 2020
    Publication date: September 16, 2021
    Inventors: Wei SONG, Ce ZHAO, Yuankui DING, Ming WANG, Ning LIU, Leilei CHENG, Junlin PENG, Yingbin HU, Liusong NI