Patents by Inventor Ce Zhao

Ce Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9502517
    Abstract: A display device, an array substrate and a fabrication method thereof are provided. The array substrate comprises a data line and a gate line, the data line and the gate line intersect with each other to define a pixel region. The pixel region comprises a first thin film transistor and a pixel electrode. The fabrication method comprises: forming an active layer film and a source-drain metal layer on a substrate, and forming an active layer, a source electrode and a drain electrode of the first thin film transistor on the substrate by a single patterning process.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: November 22, 2016
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Guangcai Yuan, Dongfang Wang, Jun Cheng, Xiangyong Kong, Ce Zhao
  • Publication number: 20160027887
    Abstract: A display device, an array substrate and a fabrication method thereof are provided. The array substrate comprises a data line and a gate line, the data line and the gate line intersect with each other to define a pixel region. The pixel region comprises a first thin film transistor and a pixel electrode. The fabrication method comprises: forming an active layer film and a source-drain metal layer on a substrate, and forming an active layer, a source electrode and a drain electrode of the first thin film transistor on the substrate by a single patterning process.
    Type: Application
    Filed: May 30, 2014
    Publication date: January 28, 2016
    Inventors: Guangcai YUAN, Dongfang WANG, Jun CHENG, Xiangyong KONG, Ce ZHAO
  • Publication number: 20160013317
    Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first, second, and third pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.
    Type: Application
    Filed: June 27, 2014
    Publication date: January 14, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ce ZHAO, Chunsheng JIANG, Guangcai YUAN
  • Publication number: 20150311345
    Abstract: The present invention provides a thin film transistor, a fabricating method thereof, a display substrate and a display device. In the fabricating method, a protective layer and an oxide active layer are patterned by one patterning process, to form patterns of the protective layer and the oxide active layer; and annealing is performed in an oxygen-containing atmosphere, so that the material of the oxide active layer diffuses into the protective layer through a contact surface between the oxide active layer and the protective layer, to form a transitional region in the protective layer, and the material of the protective layer diffuses into the oxide active layer through the contact surface, to form a transitional region in the oxide active layer, the transitional regions are configured to reduce an off-state current of the thin film transistor.
    Type: Application
    Filed: September 19, 2014
    Publication date: October 29, 2015
    Inventor: Ce Zhao