Abstract: A solar cell testing apparatus including a stage, a movable chuck, a light source and a plurality of probes is provided. The movable chuck is disposed on the stage and capable of carrying a sample sheet to move. The sample sheet has a light incident side, a rear side opposite to the light incident side, and a plurality of electrodes disposed on the rear side. The light source is disposed above the stage and capable of providing testing light to the light incident side of the sample sheet. The probes are located on the rear side of the sample sheet and capable of contacting the electrodes of the sample sheet. The present invention not only can be used to test a substrate type solar cell, but also can be used to test a superstrate type solar cell.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

Abstract: In an LCD source driver, to enhance the ESD performance thereof, there is provided a path in a device area penetrating thereacross such that an internal power wire or an internal ground wire to connect between an output pad and a power-rail ESD clamp circuit on two margins, respectively, of the LCD source driver could pass through the path to shorten the internal power wire or the internal ground wire and thereby to avoid chip area increase for the ESD mechanism.

Abstract: This invention offers a functional vinyl halide polymer that has excellent processing properties for the end-user processing without any extra processing aid. This functional vinyl halide polymer has good fusion, lubrication and melting strength in processing. The finished products show a good characterization of high transparence, low air-mark and low flow-mark. The functional vinyl halide polymer is produced by a solution, bulk or suspension polymerization. Vinyl halide or a monomer mixture comprising mainly vinyl halide is polymerized in an aqueous medium in the presence of an acrylic copolymer latex/powder to obtain the functional vinyl halide polymer. The functional vinyl halide polymer manufacturing process mainly comprises the copolymerization or graft-polymerization of: (A) 90.0 wt %˜99.9 wt % based on the total composition of the vinyl halide or the monomer mixture, and (B) 10.0 wt %˜0.

Abstract: A nose rinsing apparatus includes a main container provided with a receiving space to receive a nose rinsing liquid, a spraying device mounted on the main container to spray the atomized nose rinsing liquid, and a recycle container mounted on the main container and having an inside provided with an opening and a periphery provided with at least one three-dimensional concave portion. Thus, the three-dimensional concave portion of the recycle container has an ergonomically designed shape to fit that of the user's upper jaw so that the three-dimensional concave portion of the recycle container abuts the user's upper jaw closely and entirely to prevent the wasted rinsing liquid and the dirt in the user's nose from leaking outwardly from the opening of the recycle container.

Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

Abstract: A method for complex event processing is disclosed. An event correlation engine detects various event correlation rules to analyze events to be detected and then retrieves event processing languages from an event definition storage module to implement and receive other relative events using a process engine.

Abstract: Transformers are provided. A transformer comprises a ferromagnetic core unit; a bobbin coupled with the ferromagnetic core unit; at least a winding unit as a primary winding and at least a plate as a secondary winding. Also, some of the winding units can act as a secondary winding. At least a winding unit and at least a plate are alternatively stacked in a staggered manner. A conductive wire is wound around the winding unit.

Abstract: A peel-off device for an electronic-part delivery system has a front end portion and a recess that is indented inwardly from the front end portion, that is formed through upper and lower surfaces of the front end portion and that has a width larger than that of an electronic part of predetermined specification.

Abstract: Transformers are provided. A transformer comprises a ferromagnetic core unit; a bobbin coupled with the ferromagnetic core unit; at least a winding unit as a primary winding and at least a plate as a secondary winding. Also, some of the winding units can act as a secondary winding. At least a winding unit and at least a plate are alternatively stacked in a staggered manner. A conductive wire is wound around the winding unit.

Abstract: A method for forming a memory device is disclosed. A dielectric layer is formed on a substrate. A Sn doped phase change layer is formed on the dielectric layer. A patterned mask layer is formed on the Sn doped phase change layer. The Sn doped phase change layer is etched by an etchant comprising fluorine-based etchant added with chlorine using the patterned mask layer as a mask to pattern the Sn doped phase change layer. An electrode is formed, electrically connecting the patterned Sn doped phase change layer.

Abstract: Phase change memory devices and fabrication methods thereof. A phase change memory device comprises a stacked heating element with a conductive portion and a relatively high resistive portion, wherein the relatively high resistive portion includes a nitrogen-containing metal silicide part. The heating stacked element such as a highly resistive nitrogen-containing metal silicide (MSixNy) is formed by a self-aligned silicidizing and nitrifying process. Self-aligned silicidization can be achieved by nitrogen ion implantation or nitrogen-containing plasma treatment. The resistance of the heating element can be regulated by adjusting the content of nitrogen or degree of nitrification.

Abstract: Complex event evaluation systems and methods are disclosed. A mathematics model for complex events and corresponding factors, and calculates a critical level of respective complex events according to weightings of respective factors in the mathematics model are provided. If several complex events occur simultaneously, a priority of respective complex events is calculated according to the historic occurrence of respective complex events. The critical level and priority of respective complex events are provided to users for decision making. Additionally, the mathematics model is established and adjusted according to the feedback scores for complex events.

Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

Abstract: Complex event evaluation systems and methods are disclosed. A mathematics model for complex events and corresponding factors, and calculates a critical level of respective complex events according to weightings of respective factors in the mathematics model are provided. If several complex events occur simultaneously, a priority of respective complex events is calculated according to the historic occurrence of respective complex events. The critical level and priority of respective complex events are provided to users for decision making. Additionally, the mathematics model is established and adjusted according to the feedback scores for complex events.

Abstract: A method for complex event processing is disclosed. An event correlation engine detects various event correlation rules to analyze events to be detected and then retrieves event processing languages from an event definition storage module to implement and receive other relative events using a process engine.

Abstract: A class AB operational buffer comprises an output stage, a voltage supply circuit to provide a first voltage and a second voltage to drive the output stage, a first current source to provide a first current, a second current source to provide a second current, a first current mirror having a first reference branch coupled with the first current and a first mirror branch coupled with the second current through the voltage supply circuit, and a second current mirror having a second reference branch coupled between the second current source and first mirror branch and a second mirror branch coupled between the first current source and first reference branch.

Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.