Abstract: A class AB operational buffer comprises an output stage, a voltage supply circuit to provide a first voltage and a second voltage to drive the output stage, a first current source to provide a first current, a second current source to provide a second current, a first current mirror having a first reference branch coupled with the first current and a first mirror branch coupled with the second current through the voltage supply circuit, and a second current mirror having a second reference branch coupled between the second current source and first mirror branch and a second mirror branch coupled between the first current source and first reference branch.

Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

Abstract: The invention provides a phase change memory device comprising a stacked structure disposed on a substrate. The stacked structure comprises a first electrode, a second electrode overlying the first electrode and an insulating layer interposed between the first and the second electrodes. A memory spacer is formed on part of the sidewall of the stacked structure to contact the first electrode, the insulating layer and the second electrode.

Abstract: A phase-change memory layer and method for manufacturing the same and a phase-change memory cell are provided. The phase-change memory layer is crystallized by adding one or more heterogeneous crystals that do not react with phase-change materials as the crystal nucleus, so as to reduce the time for transforming to the crystalline state from the amorphous state.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: A phase change memory (PCM) cell and fabricating method thereof are provided. A phase change layer is etched into a tapered structure, and then a dielectric layer on the phase change layer is planarized, until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, when the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced; thereby the operation current is lowered.

Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.

Abstract: In an LCD source driver, to enhance the ESD performance thereof, there is provided a path in a device area penetrating thereacross such that an internal power wire or an internal ground wire to connect between an output pad and a power-rail ESD clamp circuit on two margins, respectively, of the LCD source driver could pass through the path to shorten the internal power wire or the internal ground wire and thereby to avoid chip area increase for the ESD mechanism.

Abstract: Transformers are provided. A transformer comprises a ferromagnetic core unit; a bobbin coupled with the ferromagnetic core unit; at least a winding unit as a primary winding and at least a plate as a secondary winding. Also, some of the winding units can act as a secondary winding. At least a winding unit and at least a plate are alternatively stacked in a staggered manner. A conductive wire is wound around the winding unit.

Abstract: A disc burner and its control method applicable to high speed disc burner, to solve disc burning failure problem due to burning speed exceeding encoding speed. A buffer is inserted to store the encoded data in groups, and these data groups are used in sequence for disc burning purpose. Therefore, the waiting time of the writing laser is spread out and does not exceed the threshold waiting time, and there is no disc burning failure problem.

Abstract: The present invention provides a source driver used in an LCD, especially a big LCD, so that energy consumed can be saved together with small amplitude and reduced electromagnetic interference.

Abstract: The present invention is applied to a liquid crystal display (LCD) having a big size so that the LCD can be used with saved energy, small amplitude and low electromagnetic interference.

Abstract: In a power wiring structure and method for a plurality of driver chips on a display panel, the display panel has a panel routing line thereon, each of the driver chips has a power line therewithin, and the power line is connected in parallel to the panel routing line. Due to the parallel connection of the power line and the panel routing line, the power wiring structure has an extremely low resistance, and thereby the power consumption resulted from the power wiring structure is very low.

Abstract: A class AB operational buffer comprises an output stage, a voltage supply circuit to provide a first voltage and a second voltage to drive the output stage, a first current source to provide a first current, a second current source to provide a second current, a first current mirror having a first reference branch coupled with the first current and a first mirror branch coupled with the second current through the voltage supply circuit, and a second current mirror having a second reference branch coupled between the second current source and first mirror branch and a second mirror branch coupled between the first current source and first reference branch.

Abstract: A disk drive unit of the invention comprises a motor base; a disk stack comprising at least one disks; a spindle motor being attached to the motor base for rotating the disk stack; and a HSA comprising at least one HGA, which having first terminal pads; and a controlling circuit for controlling the at least one HGA, which having second terminal pads to connect with the first terminal pads; wherein both the first and second terminal pads are axially tightened face-to-face to have an electrical touch contact. The invention also discloses a method of manufacturing the disk drive unit and the HSA, and also a method of electrically connecting a terminal of head gimbal assembly with a terminal of controlling circuit thereof.

Abstract: A disc burner and its control method applicable to high speed disc burner, to solve disc burning failure problem due to burning speed exceeding encoding speed. A buffer is inserted to store the encoded data in groups, and these data groups are used in sequence for disc burning purpose. Therefore, the waiting time of the writing laser is spread out and does not exceed the threshold waiting time, and there is no disc burning failure problem.

Abstract: A peel-off device for an electronic-part delivery system has a front end portion and a recess that is indented inwardly from the front end portion, that is formed through upper and lower surfaces of the front end portion and that has a width larger than that of an electronic part of predetermined specification.

Abstract: A wristband type electric nose cleaner provides an electric spray-suction pump assembly, which applies the Bernoulli's theorem to provide a function of atomization for the cleaning solution. A spray device and a suction device are involved in the nose cleaner such that the foreign matters such as mucus can be sucked out of the nose and the cleaning solution such as normal saline can be injected into the deep inside nasal cavity in a state of being atomized to enhance the nose clean job. Furthermore, a wristband is attached to the nose cleaner for fixing the nose cleaner firmly to the wrist of a user to prevent the nose cleaner from damage resulting from falling from the hand.

Abstract: An automatic storage and retrieval system and a method for operating the system are proposed, in which the automatic storage and retrieval system (AS/RS) is used to connect a user's computer device through a communication network to an AS/RS programmable logic controller (PLC), wherein a user is provided with an identification number for loginning the AS/RS, and a daily required material report is displayed in the user's computer device for allowing the user to select a material from the material report, so as to control the AS/RS PLC to store or retrieve the selected material in the case of the user matching a corresponding storage bin for the selected material in identification number, or else, the material storage or retrieval is inhibited by the AS/RS.

Abstract: A processor card has a connector for plugging into a processor slot, signal switching circuitry electrically connected to the connector, power switching circuitry for controlling power to the processor card and a processor electrically connected to the signal switching circuitry. The power switching circuitry allows power to be selectively delivered to the processor card, and the signal switching circuitry enables the processor card to be hot swapped in and out of a PCI hot swap bus. The processor card works in conjunction with a similar processor card on the bus to perform the hot swap procedure.