Abstract: An analog to digital converter by using an exponential-logarithmic model includes an exponential circuit which acquires an analog input voltage and generates an analog output voltage that is an exponential function of the input voltage. A positive feedback circuit that succeeds the exponential circuit exhibits a natural logarithmic characteristic. A comparator is connected to the positive feedback circuit to compare an output voltage of the positive feedback circuit with a reference voltage. Via the exponential-logarithmic conversion technique, the time interval or pulse produced by the positive feedback circuit is a linear function of the magnitude of the input voltage. Based on the comparator output, a counter is employed to translate the analog input signal to its digital representation.

Abstract: The present invention provides an analog to digital converter by using an exponential-logarithmic model. The exponential-logarithmic analog-to-digital converter includes an exponential circuit which acquires an analog input voltage and generates an analog output voltage that is an exponential function of the input voltage. A positive feedback circuit that succeeds the exponential circuit exhibits a natural logarithmic characteristic. A comparator is connected to the positive feedback circuit to compare an output voltage of the positive feedback circuit with a reference voltage. Via the exponential-logarithmic conversion technique, the time interval or pulse produced by the positive feedback circuit is a linear function of the magnitude of the input voltage. Based on the comparator output, a counter is employed to translate the analog input signal to its digital representation.

Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

Abstract: The present invention discloses a flexible probe structure comprises at least one electrode using a CNT layer as the electrode interface. The CNT layer disposed on the electrode surface is processed with an UV-ozone treatment to form a great number of carbon-oxygen functional groups on the surface of CNT. The carbon-oxygen functional groups can greatly reduce the interface impedance of the electrode and the biological tissue fluid. Thereby, the measurement can achieve better quality. The present invention also discloses a method for fabricating a flexible probe structure, which comprises steps: preparing a flexible substrate; forming a conductive layer on the flexible substrate, and defining an electrode, a wire and a metal pad on the conductive layer; forming a CNT layer on the electrode; forming an insulating layer on the conductive layer to insulate the wire from the environment; and processing the CNT layer with an UV-ozone treatment.

Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

Abstract: A nose rinsing apparatus includes a main container provided with a receiving space to receive a nose rinsing liquid, a spraying device mounted on the main container to spray the atomized nose rinsing liquid, and a recycle container mounted on the main container and having an inside provided with an opening and a periphery provided with at least one three-dimensional concave portion. Thus, the three-dimensional concave portion of the recycle container has an ergonomically designed shape to fit that of the user's upper jaw so that the three-dimensional concave portion of the recycle container abuts the user's upper jaw closely and entirely to prevent the wasted rinsing liquid and the dirt in the user's nose from leaking outwardly from the opening of the recycle container.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: A solar cell testing apparatus including a stage, a movable chuck, a light source and a plurality of probes is provided. The movable chuck is disposed on the stage and capable of carrying a sample sheet to move. The sample sheet has a light incident side, a rear side opposite to the light incident side, and a plurality of electrodes disposed on the rear side. The light source is disposed above the stage and capable of providing testing light to the light incident side of the sample sheet. The probes are located on the rear side of the sample sheet and capable of contacting the electrodes of the sample sheet. The present invention not only can be used to test a substrate type solar cell, but also can be used to test a superstrate type solar cell.

Abstract: A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.

Abstract: A lateral diffused metal oxide semiconductor transistor is disclosed. A p-type bulk is disposed on a substrate. An n-type well region is disposed in the p-type bulk. A plurality of field oxide layers are disposed on the p-type bulk and the n-type well region. A gate structure is disposed on a portion of the p-type bulk and one of the plurality of field oxide layers. At least one deep trench isolation structure is disposed in the p-type bulk and adjacent to the n-type well region.

Abstract: A lateral diffused metal oxide semiconductor transistor is disclosed. A p-type bulk is disposed on a substrate. An n-type well region is disposed in the p-type bulk. A plurality of field oxide layers are disposed on the p-type bulk and the n-type well region. A gate structure is disposed on a portion of the p-type bulk and one of the plurality of field oxide layers. At least one deep trench isolation structure is disposed in the p-type bulk and adjacent to the n-type well region.

Abstract: A device for repairing a solar cell module is described. The solar cell module includes a first solar cell and a second solar cell serially connected to each other. The device for repairing the solar cell module includes a first terminal, a second terminal, and a power supply device. The power supply device applies a biased voltage signal to the solar cells via the first terminal and the second terminal. The biased voltage signal includes a forward biased voltage part and a reversed biased voltage part. The reversed biased voltage part has multiple voltage bands arranged by time, and a voltage value of each voltage band is a fixed value. The voltage value of the earlier-generated voltage band is greater than the voltage value of the later-generated voltage band, and a duration of the reversed biased voltage part is longer than a duration of the forward biased voltage part.

Abstract: A method for adjusting a skin color of a digital image adjusts the skin color of an input image. The method includes performing a skin color detection process on the input image to generate a skin-color probability plot Sp in a size corresponding to the input image; providing a hue-saturation lookup table named LUT_Color; performing a skin-color reproduction process on the input image to look up the LUT_Color for a chrominance pixel value for each pixel value of the input image to generate a first image, and adjust each pixel value of the first image by using the skin-color probability plot Sp to generate a second image; performing a skin color smoothing process on the second image to generate a third image; and mixing pixel values of the input image and the third image to generate a target image.

Abstract: A solar cell is provided and includes a front contact, a first conductive type layer, an intrinsic (I) layer, a second conductive type layer, and a back contact. The first conductive type layer is a material layer of low refractive index which has a refractive index lower than 3. The material layer with low refractive index was used to increase light transmittance of the solar cell and decrease reflection which occurs at interfaces in the solar cell, and thus the solar cell has an optimum sunlight utility rate. Therefore, the solar cell has a large short circuit current (Jsc) and high efficiency.

Abstract: A system and method are disclosed for extending communications over the Internet by associating a telephone number with, for example a remote virtual private network (VPN) client IP address. A call can be received to the telephone number and an invite signal is provided to the remote VPN client utilizing the IP address. When the VPN client is able, a VPN can be established and the call can be routed to a phone associated with the remote VPN client IP address.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.

Abstract: A solar cell testing apparatus including a stage, a movable chuck, a light source and a plurality of probes is provided. The movable chuck is disposed on the stage and capable of carrying a sample sheet to move. The sample sheet has a light incident side, a rear side opposite to the light incident side, and a plurality of electrodes disposed on the rear side. The light source is disposed above the stage and capable of providing testing light to the light incident side of the sample sheet. The probes are located on the rear side of the sample sheet and capable of contacting the electrodes of the sample sheet. The present invention not only can be used to test a substrate type solar cell, but also can be used to test a superstrate type solar cell.