Abstract: A high voltage semiconductor device, including: a high concentration collector area of a first conductive type; a low concentration collector area of a first conductive type formed on the high concentration collector area; a base area of a second conductive type formed on the low concentration collector area and having a trench perforating the low concentration collector area in a vertical direction at the edge of the trench; a high concentration emitter area of a first conductive type formed on a predetermined upper surface of the base area; and an emitter electrode, a base electrode, and a collector electrode isolated from one another and connected to the emitter area, the base area, and the collector area, respectively. High breakdown voltage can be obtained with a narrow junction termination area due to the trench.

Abstract: A bipolar transistor in which the occurrence of Kirk effect is suppressed when a high current is injected into the bipolar transistor and a method of fabricating the bipolar transistor are described. The bipolar transistor includes a first collector region of a first conductive type having high impurity concentration, a second collector region of a first conductive type which has high impurity concentration and is formed on the first collector region, a base region of a second conductive type being formed a predetermined portion of the second collector region, and an emitter region of a first conductive type being formed in the base region. The bipolar transistor further includes the third collector region, which has higher impurity concentration than the second collector region, at the bottom of the base region.

Abstract: A semiconductor device handler is provided, in which a test temperature deviation of a semiconductor device caused by heat produced by the semiconductor device itself during testing is compensated for, allowing a test of the semiconductor device to be carried out at an exact temperature, or within an exact temperature range.

Abstract: Methods for compensating for a test temperature deviation in a semiconductor device handler are provided, in which a test temperature deviation of a semiconductor device caused by heat produced by the semiconductor device itself during testing of the semiconductor device at a preset temperature is compensated for. This allows a test of the semiconductor device to be carried out at an exact temperature.

Abstract: A carrier module for a semiconductor device handler, in which grooves for flow of cooling fluid are formed in a seating surface of the carrier module for the semiconductor device. The grooves improve cooling efficiency by forcing the cooling fluid sprayed from a test temperature deviation compensating system onto the carrier module to spread throughout substantially an entire surface of the semiconductor device, and to remain in the carrier module for a period of time before being discharged.

Abstract: The present invention relates to an improved chamber for a module IC handler including a pre-heater for heating module ICs to a set temperature. A receiving piece is installed in a heating chamber and is formed with a plurality of receiving grooves for receiving a carrier holding module ICs. An operating piece is disposed the chamber adjacent the receiving piece. An upper surface the operating piece includes a plurality of receiving grooves of the same interval as the receiving grooves of the receiving piece. In operation, the operating piece raises a module IC carrier from a first groove on the receiving piece and translates the module IC carrier by a distance roughly equivalent to the thickness of the module IC carrier. After translating the module IC carrier, the operating piece lowers the module IC carrier into an adjacent second groove on the receiving piece.

Abstract: The present invention relates to an agent for controlling plant diseases containing vitamin B1, or salts or derivatives thereof as an active ingredient, which exhibits excellent disease controlling effects by rapid induction of defense-related genes in plants infected with pathogens.

Abstract: A cooling system for a module IC handler is provided. The cooling system includes an air jet for cooling heat generated from the module IC where the IC is tested. The cooling system includes a base plate, an air jet body mounted on the base plate and having one or more coupling portions, a plurality of plates provided at one side of the air jet body, and a cover provided at the other side of the air jet body. Since the cooling system rapidly cools the heated module IC, the number of module ICs that fail can be reduced, thus resulting in an improvement in the reliability of the products.

Abstract: Disclosed is an axial flow fan capable of achieving reduction of noise while having a high blowing efficiency compared to the power consumption of a motor adapted to drive the axial flow fan. The axial flow fan includes a hub, and a plurality of blades extending radially around the hub. Each blade has a sweep angle varying gradually from a backward angle at a root of the blade connected to the hub to a forward angle at a tip of the blade, while having a flow dispersion region having a plurality of regions where the sweep angle is alternately changed, at a region defined between a backward sweep angle region at the root of the blade and a forward sweep angle region at the tip of the blade. Each blade has a longitudinal cross section curved to have a wave structure between the root of the blade and the tip of the blade. The axial flow fan may further include a fan band connecting tips of the blades.

Abstract: A high voltage semiconductor device, including: a high concentration collector area of a first conductive type; a low concentration collector area of a first conductive type formed on the high concentration collector area; a base area of a second conductive type formed on the low concentration collector area and having a trench perforating the low concentration collector area in a vertical direction at the edge of the trench; a high concentration emitter area of a first conductive type formed on a predetermined upper surface of the base area; and an emitter electrode, a base electrode, and a collector electrode isolated from one another and connected to the emitter area, the base area, and the collector area, respectively. High breakdown voltage can be obtained with a narrow junction termination area due to the trench.

Abstract: Disclosed are electrically conductive microgel and preparation thereof. The electrically conductive microgel is prepared by adding 3 to 30 weight % of a monomer for synthesizing electrically conductive polymer and 1 to 20 weight % of a dopant to 15 to 80 weight % of an organic solution containing 5 to 60 weight % of microgel particles and polymerizing said monomer at a temperature of 0 to 80 ° C. under the addition of 2 to 40 weight % of an aqueous solution containing 1 to 40 weight % of an oxidative polymerization catalyst, in which the polymer adsorbed on the surface of the microgel particles. The electrically conductive microgel takes a core/shell structure in which electrically conductive polymers or oligomers are physically adsorbed onto the internal crosslinked microgel particles.

Abstract: A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor substrate, a base region of second conductivity type formed in the collector region, and an emitter region of the first conductivity type formed in the base region. A channel stop region is formed being spaced a predetermined distance from the base region. An insulative film, a semi-insulating polycrystalline silicon (SIPOS) film, and a nitride film patterned respectively to expose the emitter region, the base region, and the channel stop region are sequentially deposited on the semiconductor substrate. A base electrode, an emitter electrode, and an equipotential electrode connected respectively to the base region, the emitter region, and the channel stop region are formed.

Abstract: A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor substrate, a base region of second conductivity type formed in the collector region, and an emitter region of the first conductivity type formed in the base region. A channel stop region is formed being spaced a predetermined distance from the base region. An insulative film, a semi-insulating polycrystalline silicon (SIPOS) film, and a nitride film patterned respectively to expose the emitter region, the base region, and the channel stop region are sequentially deposited on the semiconductor substrate. A base electrode, an emitter electrode, and an equipotential electrode connected respectively to the base region, the emitter region, and the channel stop region are formed.

Abstract: A power semiconductor device having an breakdown voltage improving structure and a manufacturing method thereof are provided. A collector region and a base region create a pn junction between them. At least one accelerating region of the same conductivity type as the collector region is formed spaced from the pn junction and at a dose higher than that of the collector region. A field plate overlaps the pn junction and the accelerating region. The field plate has an edge portion that extends past the accelerating region. When a voltage of a reverse direction is applied to the pn junction, an electric field becomes concentrated on the accelerating region as well as on the pn junction and on the edge portion of the field plate. This increases an electric field distribution area and thus also increases the breakdown voltage.

Abstract: A method and an apparatus for cleaning smoke and reducing noises of an internal combustion engine or external combustion engine by using a high voltage field. The present invention relates to a method and an apparatus which can clean exhaust gases and reduce noise, wherein it comprises the step of burning up the granular particles with corona discharge after changing particles into plasma state, the step of removing gaseous materials with negative ions, the step of eliminating NOx with ultraviolet rays and the step of reducing noise.

Abstract: A method for manufacturing a power semiconductor device including a semi-insulating polycrystalline silicon (SIPOS) film is provided. According to this method, first, a conductive collector region is formed in a semiconductor substrate. Then, a first insulating film, which exposes a portion of the semiconductor substrate in which a base region is to be formed, is formed on said semiconductor substrate in which the collector region is formed. A conductive base region is formed in the collector region. A second insulating film is formed over the entire surface of the semiconductor substrate. After exposing a portion of the semiconductor substrate in which an emitter region and a channel stop region are to be formed, impurities for the emitter region are implanted into the base region. Simultaneously, a third insulating film is formed over the entire surface of the semiconductor substrate, while a conductive emitter region is formed by diffusing the impurities.