Abstract: In a semiconductor power device and method of the same, the semiconductor device includes a substrate, a gate electrode structure, first impurity regions, an insulating interlayer, first contact plugs and a first metal pattern. The substrate includes an active region and a termination region. The gate electrode structure includes a first gate electrode and a second gate electrode buried in the substrate, and upper surfaces of the gate electrode structure are lower than an upper surface of the substrate between the first and second gate electrodes. The first impurity regions are formed in the substrate between the first and second electrodes. The insulating interlayer having a flat top surface is formed on the substrate and the gate electrode structure. The first contact plugs are formed through the insulating interlayer, and the first contact plugs contact the first impurity regions. The first metal pattern having a flat top surface is formed on the first contact plugs and the insulating interlayer.

Abstract: A semiconductor device may include: a first semiconductor layer having a first band gap; a second semiconductor layer including first and second regions separately disposed on an upper surface of the first semiconductor layer and having a second band gap wider than the first band gap; and a third semiconductor layer disposed between the first and second regions of the second semiconductor layer, extending up to at least a portion of the first semiconductor layer. The third semiconductor layer may have a channel region doped with an impurity.

Abstract: A semiconductor power device includes a substrate, a plurality of gate electrode structures, a floating well region and a termination ring region. The substrate has a first region and a second region. A plurality of gate electrode structures is formed on the substrate, each of the gate electrode structures extends from the first region to the second region and includes a first gate electrode, a second gate electrode and a connecting portion, the first and second gate electrodes extend in a first direction, and the connecting portion connects end portions of the first and second gate electrodes to each other. The floating well region is doped with impurities between the gate electrode structures in the first region of the substrate, and the floating well region has a first impurity concentration and a first depth.

Abstract: Novel benzoarylureido compounds and a use thereof for prevention and/or treatment of the neurodegenerative brain disease are provided. The neurodegenerative brain diseases may include Alzheimer's disease, dementia, Parkinson's disease, stroke, amyloidosis, Pick's disease, Lou Gehrig's disease, Huntington's disease, Creutzfeld-Jakob disease, and the like.

Abstract: A device and method process voice communication service. A mobile terminal device of the present disclosure includes a microphone arranged at one end of a body of the device; a speaker arranged close to the microphone; a transceiver arranged at the other end of the body; a codec including a coder connected to the microphone, a decoder connected to the speaker, and a switch of which one node is connected to one of the coder and the decoder selectively and the other node is connected to the transceiver; and a communication controller which controls the switch to establish a path between the coder and the transceiver and enables the speaker in speakerphone mode.

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes active portions defined in a semiconductor substrate, a device isolation pattern in a trench formed between the active portions, a gate electrode in a gate recess region crossing the active portions and the device isolation pattern, a gate dielectric layer between the gate electrode and an inner surface of the gate recess region, and a first ohmic pattern and a second ohmic pattern on each of the active portions at both sides of the gate electrode, respectively. The first and second ohmic patterns include a metal-semiconductor compound, and a top surface of the device isolation pattern at both sides of the gate recess region is recessed to be lower than a level of a top surface of the semiconductor substrate.

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer.

Abstract: A nitride-based semiconductor device includes a barrier structure on a substrate, a nitride semiconductor layer on the barrier structure, and a source electrode, a drain electrode, and a gate electrode on the nitride semiconductor layer to be separated from each other. The barrier structure includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity on the first semiconductor layer, a third semiconductor layer having the first conductivity on the second semiconductor layer, and a fourth semiconductor layer having the second conductivity on the third semiconductor layer. A two-dimensional electrode gas (2DEG) channel is formed in the nitride semiconductor layer.

Abstract: A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a collector electrode disposed on the other surface of the substrate, a trench gate disposed in the substrate, a field diffusion junction disposed in the substrate, and a first contact connecting the trench gate and the first field plate. The first field plate has a first part extending toward the emitter electrode with respect to the first contact and having a first width, and a second part extending toward the field diffusion junction with respect to the first contact and having a second width. The second width is greater than the first width.

Abstract: A device and method process voice communication service. A mobile terminal device of the present disclosure includes a microphone arranged at one end of a body of the device; a speaker arranged close to the microphone; a transceiver arranged at the other end of the body; a codec including a coder connected to the microphone, a decoder connected to the speaker, and a switch of which one node is connected to one of the coder and the decoder selectively and the other node is connected to the transceiver; and a communication controller which controls the switch to establish a path between the coder and the transceiver and enables the speaker in speakerphone mode.

Abstract: A semiconductor device includes a channel layer on a substrate; cell trench patterns in the channel layer; and a source pattern on the cell trench patterns. The source pattern includes: grooves, each having inclined sidewalls and bottom that extends in a horizontal direction in a portion of the channel layer between the cell trench patterns, source regions at the inclined sidewalls of the grooves, source isolation regions at the bottoms of the grooves, and a source electrode at interior regions of the grooves and that has a planar upper surface.

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract: A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer.

Abstract: A high electron mobility transistor (HEMT) device includes a buffer layer on a substrate; a face-inversion layer on a part of the buffer layer; a plurality of semiconductor layers on the face-inversion layer and on the buffer layer; and a source electrode, a drain electrode, and a gate electrode on the plurality of semiconductor layers. The HMT device has a stable, normally Off characteristic.

Abstract: Provided is a method of booting a computing system which performs boot image transmission and device initialization in parallel. For example, using an Internal RAM and direct memory access (DMA), hardware initialization and loading of boot image from a main storage medium to a main memory are performed in parallel, thereby reducing time spent on booting.

Abstract: A method for providing a graphical user interface (GUI) to receive a user command on a touch screen, and a multimedia apparatus using the same. The method for providing a GUI includes determining whether an enlargement command for a GUI item is received, and enlarging the GUI item. Therefore, it is possible to enable a user to operate the GUI item more correctly, and to provide the superior visual effect when the GUI item is operated.

Abstract: Disclosed is an apparatus for spinning a test tray and an in-line test handler including the above apparatus, wherein the apparatus may include a supporting unit for supporting a test tray transported between first and second chamber units facing in the different directions, wherein the first chamber unit is provided at a predetermined interval from the second chamber unit; a base unit to which the supporting unit is spinnably connected; and a spinning unit which spins the test tray so that semiconductor devices received in the test tray are tested at the same arrangement in each of the first chamber unit and the second chamber unit.

Abstract: A method for providing a graphical user interface (GUI) to receive a user command on a touch screen, and a multimedia apparatus using the same. The method for providing a GUI includes determining whether an enlargement command for a GUI item is received, and enlarging the GUI item. Therefore, it is possible to enable a user to operate the GUI item more correctly, and to provide the superior visual effect when the GUI item is operated.

Abstract: Provided are a booting apparatus and method using a snapshot image. A snapshot image may be divided into a plurality of blocks. Each of the blocks may be stored in a nonvolatile memory in a compressed or non-compressed format. The snapshot image may be incrementally loaded in units of the blocks during booting. The loading and decompression of the blocks may be performed in parallel.

Abstract: A gas distribution plate that is installed in a chamber providing a reaction space and supplies a reaction gas onto a substrate placed on a substrate placing plate, wherein the gas distribution plate includes: first and second surfaces opposing to each other, wherein the second surface faces the substrate placing plate and has a recess shape; and a plurality of injection holes each including: an inflow portion that extends from the first surface toward the second surface; a diffusing portion that extends from the second surface toward the first surface; and an orifice portion between the inflow portion and the diffusing portion, wherein the plurality of inflow portions of the plurality of injection holes decrease in gas path from edge to middle of the gas distribution plate, and wherein the plurality of diffusing portions of the plurality of injection holes have substantially the same gas path.