Abstract: A semiconductor device manufacturing method includes determining whether or not a reticle writing correction needs to be applied to a mask for an exposure process, when determining that the reticle writing correction needs to be applied, manufacturing the mask to which the reticle writing correction is applied by using the mask to which the reticle writing correction is applied, measuring an overlay and performing a correction based on the basis of on the measured overlay, determining whether or not a value of the measured overlay is greater than a specification, and when the value of the measured overlay is not greater than the specification, performing a subsequent process.

Abstract: A display device may include a pixel that includes a first transistor, a second transistor including a gate electrode coupled to a first scan line, and first and second electrodes, a third transistor including a gate electrode coupled to a second scan line, and first and second electrodes, a fourth transistor including a gate electrode coupled to a third scan line, and first and second electrodes, a fifth transistor including a gate electrode coupled to a fourth scan line, and first and second electrodes, a sixth transistor including a gate electrode coupled to a fifth scan line, and first and second electrodes, and a first capacitor. The display device may be, during a first period of a frame period, to concurrently apply a turn-on level scan signal to the third scan line, and apply turn-off level scan signals to the first, second, fourth and fifth scan lines.

Abstract: A pixel may include first to third sub-pixels including a first transistor connected to a first power node, a second node, and a first node, a second transistor connected to a data line, the first node, and a first scan line, a third transistor connected to a reference voltage node, the first node, and a second scan line, a fourth transistor connected to a third node, a first initialization voltage node, and a third scan line, a fifth transistor connected to the first power node, the first transistor, and a first emission control line, a sixth transistor connected to the second node, the third node, and a second emission control line, and a first capacitor between the first node and the second node. Any one among reference voltage nodes connected to the first to third sub-pixels may be electrically separated from the other reference voltage nodes.

Abstract: A substrate bonding apparatus for bonding a first substrate to a second substrate includes a lower bonding chuck configured to support the first substrate, an upper bonding chuck facing the lower bonding chuck and configured to support the second substrate, a gas discharge device provided through the center of the upper bonding chuck and configured to discharge pressurized gas to a top surface of the second substrate, a gas supply unit configured to supply the pressurized gas to the gas discharge device, and a controller configured to control the gas discharge device and the gas supply unit and the controller controls vertical movement of the gas discharge device with respect to the upper bonding chuck, and a flow rate and pressure of the pressurized gas in the gas discharge device.

Abstract: A method of determining an overlay reference wavelength, the method comprising: forming a pattern structure including a wafer and overlay keys on the wafer; obtaining first setup values of the pattern structure for first measurement wavelengths, respectively; selecting second measurement wavelengths among the first measurement wavelengths by filtering the first measurement wavelengths based on the first setup values; obtaining second setup values of the pattern structure for the second measurement wavelengths, respectively; and selecting a reference wavelength among the second measurement wavelengths based on the second setup values, wherein each of the first setup values is proportional to a deviation value of target sigma values of the overlay keys at a respective first measurement wavelength, and wherein each of the second setup values is inversely proportional to a deviation value of stack sensitivity values of the overlay keys at a respective second measurement wavelength.

Abstract: A pixel may include first to third sub-pixels including a first transistor connected to a first power node, a second node, and a first node, a second transistor connected to a data line, the first node, and a first scan line, a third transistor connected to a reference voltage node, the first node, and a second scan line, a fourth transistor connected to a third node, a first initialization voltage node, and a third scan line, a fifth transistor connected to the first power node, the first transistor, and a first emission control line, a sixth transistor connected to the second node, the third node, and a second emission control line, and a first capacitor between the first node and the second node. Any one among reference voltage nodes connected to the first to third sub-pixels may be electrically separated from the other reference voltage nodes.

Abstract: A display device includes: a light emitting element on a substrate; a first transistor configured to control a driving current flowing in the light emitting element; a second transistor configured to supply a data voltage to the gate electrode of the first transistor based on a first gate signal; a third transistor configured to supply a first reference voltage to the gate electrode of the first transistor based on a second gate signal; a fourth transistor configured to supply a second reference voltage different from the first reference voltage to the drain electrode of the first transistor based on a third gate signal; a fifth transistor configured to supply a driving voltage to the drain electrode of the first transistor based on a first emission signal; and a hold capacitor connected between a second reference line supplying the second reference voltage and the source electrode of the first transistor.

Abstract: A method for manufacturing a semiconductor device includes providing a first pre-reticle including a first overlay mark and a first on-cell pattern. A second pre-reticle is provided that includes a second overlay mark and a second on-cell pattern. A first pattern is formed from the first pre-reticle using a first illumination system. A second pattern is formed from the second pre-reticle using a second illumination system. An overlay error is measured between the first pattern and the second pattern. A corrected reticle is formed based on the measured overlay error.

Abstract: It is an object of the present invention to provide a compound that has a high refractive index and a low extinction coefficient in a wavelength range of 450 to 750 nm, and is thus suitably used as a material for a capping layer of an organic EL element. Also, it is another object of the invention to provide an organic EL element including such a compound to improve the light extraction efficiency of the element.

Abstract: A display device includes a plurality of pixels arranged in a display area of a display panel, and a display driving circuit supplying data voltages and pixel driving control signals to the plurality of pixels to control an image display operation for each of the plurality of pixels. The display driving circuit further supplies an active control voltage that varies proportional to or inversely proportional to a change in temperature of the display panel to at least one thin film transistor included in the plurality of pixels.

Abstract: A manufacturing method of a porous polyimide film, includes: preparing a polyamic acid solution at a concentration of 10 to 30 wt % by dissolving a diamine compound and a dianhydride in a solvent; applying the prepared polyamic acid solution to a substrate to prepare a film and then immersing the same in a non-solvent for 30 minutes to 180 minutes; and taking out the immersed film and thermally curing the same; and a porous polyimide film manufactured thereby.

Abstract: A method of optimizing an overlay measurement condition includes measuring, for each overlay measurement condition of multiple overlay measurement conditions, an overlay at multiple positions on a substrate; calculating, for each of the multiple overlay measurement conditions, key parameter indexes (KPIs) based on the measured overlay; converting, for each of the multiple overlay measurement conditions, the KPIs into key parameter function (KPF) values based on a KPF, where each of the KPFs has a same dimensional representation; integrating, for each of the multiple overlay measurement conditions, the KPF values to generate an integrated KPF value; and selecting an optimized overlay measurement condition from among the multiple overlay measurement conditions based on the integrated KPF values associated with each of the multiple overlay measurement conditions.

Abstract: Provided are a regeneration solution of a spent secondary battery cathode material, the regeneration solution including p-type redox molecules, a solvent, and a lithium salt, in which the p-type redox molecules have a reduction potential that is higher than or equal to 1.55 volt (V) and lower than or equal to 3.7 V with respect to a reduction potential (vs Li/Li+) of lithium, a method of regenerating a cathode material and a regenerated cathode material using this, and a method of recycling the regeneration solution.

Abstract: It is an object of the present invention to provide a compound that has a high refractive index and a low extinction coefficient in a wavelength range of 450 to 750 nm, which is favorably used as a material for a capping layer of an organic EL element. Also, it is another object of the present invention to provide an organic EL element whose light extraction efficiency has been improved by using the compound. The present invention is directed to a compound represented by a general formula (1) or (2) below: where A represents a substituted or unsubstituted aromatic hydrocarbon group or the like, B and C are optionally the same or different, and represent an unsubstituted naphthyl group, an unsubstituted quinolyl group, or the like, and each L is optionally the same or different, and represents a single bond, a substituted or unsubstituted divalent aromatic hydrocarbon group, or the like.

Abstract: In order to prevent deterioration inside an organic EL element and significantly improve the light extraction efficiency, an object of the present invention is to provide a compound that absorbs light rays with wavelengths of 400 to 410 nm of sunlight, thereby preventing them from affecting a material inside the element, and has a high refractive index in a wavelength range of 450 to 750 nm. The present invention provides an amine compound having a specific benzazole ring structure having a high refractive index. An organic EL element having excellent light emission efficiency is obtained by using the compound of the present invention as a material constituting a capping layer.

Abstract: A display device may include a pixel that includes a first transistor, a second transistor including a gate electrode coupled to a first scan line, and first and second electrodes, a third transistor including a gate electrode coupled to a second scan line, and first and second electrodes, a fourth transistor including a gate electrode coupled to a third scan line, and first and second electrodes, a fifth transistor including a gate electrode coupled to a fourth scan line, and first and second electrodes, a sixth transistor including a gate electrode coupled to a fifth scan line, and first and second electrodes, and a first capacitor. The display device may be, during a first period of a frame period, to concurrently apply a turn-on level scan signal to the third scan line, and apply turn-off level scan signals to the first, second, fourth and fifth scan lines.

Abstract: A method of fabricating a semiconductor device may include providing a substrate including cell and peripheral regions, forming a cell gate structure on the cell region, forming a peripheral gate structure on the peripheral region, forming a bit line structure on the cell region, forming a preliminary conductive layer to cover the bit line structure and the peripheral gate structure, and etching the preliminary conductive layer to form a landing pad and peripheral conductive pads. The etching of the preliminary conductive layer may include forming lower and photoresist layers on the preliminary conductive layer, performing a first exposure process on the photoresist layer, performing a second exposure process on the photoresist layer, and etching the preliminary conductive layer using the photoresist and lower layers as an etch mask. The first exposure process may expose a portion of the photoresist layer that is on the cell region to light.

Abstract: A method of detecting overlay of patterns includes forming a lower pattern and an upper pattern on a substrate. A sample pattern is drawn that has a common tangential line with the lower pattern. A position of a real center of gravity of the lower pattern is calculated using the common tangential line.

Abstract: A display device includes a display panel including pixels in one pixel column and a gate driver for sequentially providing scan signals to the pixels. Each of the pixels includes a light emitting element, a first transistor for controlling a current amount of driving current flowing through the light emitting element and a second transistor for transferring a data signal to a gate electrode of the first transistor in response to a corresponding scan signal among the scan signals. A first pixel among the pixels is electrically connected to a first data line, and a second pixel adjacent to the first pixel among the pixels is electrically connected to a second data line different from the first data line. A second scan signal provided to the second pixel partially overlaps with a first scan signal provided to the first pixel.

Abstract: A semiconductor device includes a first stack structure in a first region, a first channel structure in contact with the substrate, a second stack structure on the first stack structure, a second channel structure connected to the first channel structure, a third stack structure on the second stack structure, a third channel structure connected to the second channel structure, a first mold structure in a second region, first overlay structures on the first mold structure, a second mold structure on the first mold structure, second overlay structures on the second mold structure, a third mold structure on the second mold structure, and third overlay structures on the third mold structure, wherein the first to third overlay structures are on an overlay mark region, and the first to third overlay structures are in at least one of quadrants in the overlay mark region.