Abstract: An operating method of an extreme ultraviolet (EUV) lithography device includes defining a target image to render an illumination system, assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, assigning a mirror according to the assigned priorities using linear programming, generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion, and converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.

Abstract: A display apparatus, a control method thereof and a recording medium are provided. The display apparatus includes: a display; a communicator configured to communicate with at least one external apparatus; and a processor configured to: control a user interface (UI) to be displayed on the display, the UI including a first item corresponding to the display apparatus and a second item corresponding to the at least one external apparatus and being displayed to distinguish between an external apparatus connected to the display apparatus and an external apparatus disconnected from the display apparatus, and, based on one of at least one of the second item being selected, control the external apparatus corresponding to the selected item to be connected to or disconnected from the display apparatus through the communicator.

Abstract: An engraving fixture for use with an engraver including a laser moveable along a linear X-axis path wherein the fixture comprises a base structure having two mutually extendable parts to assume different axial lengths thereby to accommodate objects of different lengths. The base can accommodate at an axial mid-point an auxiliary support for especially heavy objects. The base structure includes a support structure carrying the drive wheels and a stepper motor at one end, and a slidable passive support that can be placed at any location on the base member.

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

Abstract: An EUV photomask having a main area and a scribe lane area and reflecting EUV light includes a reflective multilayer film and an absorption pattern, wherein the scribe lane area includes first and second lanes, wherein the first lane includes first and second sub-lanes extending in the same direction as an extending direction of the first lane, wherein the first sub-lane includes a first dummy pattern that is a portion of the absorption pattern, and the second sub-lane includes a second dummy pattern that is a portion of the absorption pattern, and when EUV light that is not absorbed by the first and second dummy patterns and is reflected by the reflective multilayer film is irradiated at least twice by overlapping a negative tone photoresist, an amount of light exceeds a threshold dose of light in the negative tone photoresist corresponding to the first lane.

Abstract: A semiconductor device includes active regions, a gate electrode, respective drain regions, respective source regions, a drain contact structure, a source contact structure, and a gate contact structure. The active regions extend linearly in parallel on a substrate. The gate electrode crosses the active regions. The drain regions are on and/or in the active regions on a first side of the gate electrode. The respective source regions are on and/or in the active regions on a second side of the gate electrode. The drain contact structure is on multiple drain regions. The source contact structure is on multiple source regions. The gate contact structure is on the gate electrode between the drain and source contact structures. The gate contact structure includes a gate plug and an upper gate plug directly on the gate plug. A center of the gate contact structure overlies only one of the active regions.

Abstract: An apparatus for testing an edge portion of a substrate, includes a first illumination source configured to irradiate light to an end portion of the edge portion of the substrate; a second illumination source configured to irradiate light to a lower portion of the edge portion; a third illumination source configured to irradiate light to an upper portion of the edge portion; and first to third photographing portions, respectively corresponding to the first to third illumination sources, wherein the first illumination source comprises a C-shaped cross-section and comprises a first curved surface facing the end portion of the edge portion, the second illumination source comprises a half C-shaped cross-section and comprises a second curved surface facing the lower portion of the edge portion, and the third illumination source comprises a half C-shaped cross-section and comprises a third curved surface facing the upper portion of the edge portion.

Abstract: A semiconductor device manufacturing system includes a photolithography apparatus that performs exposure. On a semiconductor substrate including a chip area and a scribe lane area. An etching apparatus etches the exposed semiconductor substrate. An observing apparatus images the etched semiconductor substrate. A controller controls the photolithography apparatus and the etching apparatus. The controller generates a first mask pattern and provides the first mask pattern to the photolithography apparatus. The photolithography apparatus performs exposure on the semiconductor substrate using the first mask pattern. The etching apparatus performs etching on the exposed semiconductor substrate to provide an etched semiconductor substrate. The observing apparatus generates a first semiconductor substrate image by imaging the etched semiconductor substrate corresponding to the scribe lane area.

Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

Abstract: A charging control box detachable charging cable system includes a vehicle cable having a vehicle terminal on one end for connection to a first connection terminal of a charging control box or an external power source, and an outlet on the other end for connection to a charging inlet of a vehicle. The system also includes a portable cable having one end for connection to the external power source, and a portable terminal provided on the other end for connection to a second connection terminal of the charging control box. The vehicle terminal has a first corresponding key configured to be engaged and coupled with the first key of the first connection terminal, and the portable terminal has a second corresponding key configured to be engaged and coupled with the second key of the second connection terminal.

Abstract: A display apparatus, a control method thereof and a recording medium are provided. The display apparatus includes: a display; a communicator configured to communicate with at least one external apparatus; and a processor configured to: control a user interface (UI) to be displayed on the display, the UI including a first item corresponding to the display apparatus and a second item corresponding to the at least one external apparatus and being displayed to distinguish between an external apparatus connected to the display apparatus and an external apparatus disconnected from the display apparatus, and, based on one of at least one of the second item being selected, control the external apparatus corresponding to the selected item to be connected to or disconnected from the display apparatus through the communicator.

Abstract: An apparatus for testing an edge portion of a substrate, includes a first illumination source configured to irradiate light to an end portion of the edge portion of the substrate; a second illumination source configured to irradiate light to a lower portion of the edge portion; a third illumination source configured to irradiate light to an upper portion of the edge portion; and first to third photographing portions, respectively corresponding to the first to third illumination sources, wherein the first illumination source comprises a C-shaped cross-section and comprises a first curved surface facing the end portion of the edge portion, the second illumination source comprises a half C-shaped cross-section and comprises a second curved surface facing the lower portion of the edge portion, and the third illumination source comprises a half C-shaped cross-section and comprises a third curved surface facing the upper portion of the edge portion.

Abstract: A laser engraver comprises a generally rectangular housing with an open bottom adapted to rest on supports provided at the top plane of an open carriage. Thumb wheel screws operating in fixed nuts on the left and right sides of the laser housing and resting on supports at the top plane of the carriage allow the laser housing can be raised, lower and tilted. A plate can be removably and adjustably mountable within the housing directly under the laser for carrying smaller objects. A cart capable of carrying objects to be engraved can be moved into the space between the carriage side panels and is provided with height and level adjustments to support an object to be engraved by the laser when the removable plate is taken out of the laser housing.

Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

Abstract: A display apparatus, a control method thereof and a recording medium are provided. The display apparatus includes: a display; a communicator configured to communicate with at least one external apparatus; and a processor configured to: control a user interface (UI) to be displayed on the display, the UI including a first item corresponding to the display apparatus and a second item corresponding to the at least one external apparatus and being displayed to distinguish between an external apparatus connected to the display apparatus and an external apparatus disconnected from the display apparatus, and, based on one of at least one of the second item being selected, control the external apparatus corresponding to the selected item to be connected to or disconnected from the display apparatus through the communicator.

Abstract: Provided is a solar cell including: a crystalline silicon semiconductor substrate having a specific radius of curvature; a plurality of microwire structures that extend from a first surface of the crystalline silicon semiconductor substrate in a vertical direction and are arranged spaced apart from each other; a first layer positioned on the first surface of the crystalline silicon semiconductor substrate and forming a P-N junction with the crystalline silicon semiconductor substrate; a first electrode part positioned on the first layer and connected to the first layer; a second layer positioned on a second surface of the crystalline silicon semiconductor substrate which is opposite the first surface; and a second electrode part positioned on the second layer and connected with the second layer.

Abstract: An overlay correction method may include obtaining a first central line of a lower pattern on a substrate, forming a photoresist pattern on the lower pattern, obtaining an ADI overlay value corresponding to a first distance between a second central line of an upper flat surface of the lower pattern and a third central line of the photoresist pattern, obtaining an asymmetrical overlay value corresponding to a second distance between the first and second central lines, form an upper pattern using the photoresist pattern, obtaining an ACI overlay value corresponding to a third distance between the first central line and a fourth central line of the upper pattern, subtracting the ADI overlay value from the ACI overlay value to obtain a first overlay skew value, and adding the asymmetrical overlay value to the first overlay skew value to obtain a second overlay skew value.

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

Abstract: A method of manufacturing an integrated circuit (IC) device, the method including forming an underlayer on a feature layer such that the underlayer includes an acid generator; forming an acid-containing underlayer by generating a first acid from the acid generator; forming a photoresist film on the acid-containing underlayer; generating a second acid in a first area of the photoresist film by exposing the first area of the photoresist film; diffusing the first acid from the acid-containing underlayer into the first area of the photoresist film; and forming a photoresist pattern by developing the photoresist film.