Patents by Inventor Chan Lim

Chan Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CURRENT COLLECTOR FOR BATTERY COMPRISING METAL MESH LAYER AND MANUFACTURING METHOD THEREFOR
    Publication number: 20150125756
    Abstract: Provided are a current collector for a battery, including: a base material; adhesive layers positioned on the base material; and metal mesh layers positioned on the adhesive layers, in which the metal mesh layer includes a plurality of metal mesh patterns, and holes positioned between the metal mesh patterns, and a method of manufacturing the same. An active material is applied onto the metal mesh layer through the holes of the metal mesh layer, and thus a contact area of the metal mesh layer and the active material is increased, so that it is possible to restrict the active material from being deintercalated from the current collector and improve a cycle lifespan property of a battery.
    Type: Application
    Filed: April 22, 2013
    Publication date: May 7, 2015
    Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALS
    Inventors: Man Kim, Joo Yul Lee, Sang Yeoul Lee, Yong Soo Jeong, Do Yon Chang, Kyu Hwan Lee, Cheol Nam Yang, Chang Rae Lee, Seong Bong Yim, Dong Chan Lim, Jae Hong Lim, Young Sup Song, Sung Mo Moon, Su Sub Cha
  • Integrated circuit having through silicon via structure with minimized deterioration
    Patent number: 9018768
    Abstract: A semiconductor device includes a circuit pattern over a first surface of a substrate, an insulating interlayer covering the circuit pattern, a TSV structure filling a via hole through the insulating interlayer and the substrate, an insulation layer structure on an inner wall of the via hole and on a top surface of the insulating interlayer, a buffer layer on the TSV structure and the insulation layer structure, a conductive structure through the insulation layer structure and a portion of the insulating interlayer to be electrically connected to the circuit pattern, a contact pad onto a bottom of the TSV structure, and a protective layer structure on a second surface the substrate to surround the contact pad.
    Type: Grant
    Filed: September 26, 2012
    Date of Patent: April 28, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-lyul Park, Gil-heyun Choi, Suk-chul Bang, Kwang-jin Moon, Dong-chan Lim, Deok-young Jung
  • Olefin block copolymers and production methods thereof
    Patent number: 9000115
    Abstract: The present description relates to olefin block copolymers having excellent elasticity and processability in conjunction with enhanced heat resistance, and to a preparation method thereof. The olefin block copolymers comprise a plurality of blocks or segments that comprise ethylene or propylene repeating units and ?-olefin repeating units at different mole fractions from one another, wherein the block copolymer shows peaks at the 2? of 21.5±0.5° and 23.7±0.5° in a wide-angle x-ray diffraction (WAXD) pattern, and the peak ratio defined by (the peak area at 21.5±0.5°)/(the peak area at 23.7±0.5°) is no more than 3.0.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: April 7, 2015
    Assignee: LG Chem, Ltd.
    Inventors: Yong Ho Lee, Manseong Jeon, Heon-Yong Kwon, Min-Seok Cho, Seon Kyoung Kim, Dae-Sik Hong, Se Hui Sohn, Ki-Soo Lee, Kyoung-Chan Lim
  • ENVIRONMENT-FRIENDLY ADHESIVE COMPOSITION AND TAPE MANUFACTURED USING THE SAME
    Publication number: 20150064461
    Abstract: An environment-friendly adhesive composition is provided that includes about 10 to about 70 parts by weight of a tackifying agent base including an acryl-based attaching agent as a raw material, about 5 to about 40 parts by weight of a terpene-based tackiness improver, about 0.5 to about 5 parts by weight of an epoxy-based crosslinking agent, about 5 to about 60 parts by weight of a flame retardant, and a combination thereof, based on 100 parts by weight of a solvent excluding benzene, toluene and xylene (BTX). The flame retardant includes at least one selected from a group consisting of a halogen-based flame retardant, an antimony flame retardant, and a phosphorus-based flame retardant. The adhesive composition and a tape manufactured using the same may be used exclusively in a vehicle industry, and in various electronic industries.
    Type: Application
    Filed: July 1, 2014
    Publication date: March 5, 2015
    Inventors: Min Su Kim, Jae Chan Lim, Sun Yong Shin, Sei Youn Ko
  • Receiving device of OFDM communication system and method for alleviating phase noise thereof
    Patent number: 8958491
    Abstract: The present invention relates to a receiving apparatus in an OFDM communication system and a phase noise mitigation method thereof which are configured to estimate and compensate for phase noise from a received OFDM symbol, unlike the conventional receiver which uses a pilot symbol for mitigating phase noise, and thus can improve the transmission efficiency and error rate performance in an OFDM system.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: February 17, 2015
    Assignee: Postech Academy-Industry Foundation
    Inventors: Myung Kyu Lee, Kyeong Cheol Yang, Seung Chan Lim
  • Display apparatus and control method thereof
    Patent number: 8953825
    Abstract: A display apparatus including a speaker and a control method thereof which controls the speaker to output a sound wave adjusted according to an installation condition of the display apparatus. The display apparatus includes a signal processor which processes an image signal and an audio signal; a display unit which displays an image corresponding to the image signal processed by the signal processor; a speaker which outputs a sound wave corresponding to the audio signal processed by the signal processor; and a controller which controls the signal processor to adjust the sound wave corresponding to the audio signal to an adjustment value according to an installation condition of the display apparatus.
    Type: Grant
    Filed: December 20, 2010
    Date of Patent: February 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soo-chan Lim, Sung-woo Bae
  • METHOD FOR ETHYLENE OLIGOMERIZATION
    Publication number: 20150018502
    Abstract: The present invention relates to a method for ethylene oligomerization. According to the method of the present invention, highly active ethylene oligomerization reaction is possible by using a catalyst system including a novel chromium compound exhibiting high activity for ethylene oligomerization reaction, and therefore, polyethylene can be prepared using a small amount of comonomers or using only ethylene without comonomers.
    Type: Application
    Filed: May 10, 2013
    Publication date: January 15, 2015
    Applicant: LG CHEM, LTD.
    Inventors: Heon Yong Kwon, Yong Ho Lee, Kyoung-Chan Lim, Ki Soo Lee, Min Seok Cho
  • LIGAND COMPOUND, CHROMIUM COMPOUND AND CATALYST SYSTEM INCLUDING THE SAME
    Publication number: 20150011382
    Abstract: The present invention relates to a ligand compound, a chromium compound, and a catalyst system including the same. The catalyst system including the ligand compound or chromium compound according to the present invention exhibits high catalytic activity in ethylene oligomerization reaction, and therefore, polyethylene can be prepared using a small amount of comonomers or using only ethylene without comonomers.
    Type: Application
    Filed: May 10, 2013
    Publication date: January 8, 2015
    Applicant: LG CHEM, LTD.
    Inventors: Heon-Yong Kwon, Yong-Ho Lee, Kyoung-Chan Lim, Ki-Soo Lee, Min-Seok Cho
  • THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150008434
    Abstract: A thin film transistor array panel includes a first insulating substrate, a gate electrode positioned on the first insulating substrate, a gate insulating layer positioned on the gate electrode, a semiconductor layer positioned on the gate insulating layer, and a source electrode and a drain electrode positioned on the semiconductor layer and spaced apart from each other, in which the semiconductor layer includes three or more amorphous silicon layers having different bandgap energies from one another in order to reduce a leakage current and improve performance of a liquid crystal display.
    Type: Application
    Filed: December 10, 2013
    Publication date: January 8, 2015
    Applicant: Samsung Display Co., Ltd.
    Inventors: Sung Hoon Yang, Hyeong Suk Yoo, Hae Yoon Jung, Jong-Chul Park, Jong Hyun Park, Jang-Ki Baek, Eun-Chan Lim
  • Positive temperature coefficient (PTC) rod assembly and PTC heater using the same
    Patent number: 8895898
    Abstract: A positive temperature coefficient (PTC) rod assembly is provided for a PTC heater. PTC elements and an electrode terminal to which an insulator is attached may be retained in a channel-shaped rod cover having an open side so as to be exposed to the outside, and a heat-radiating fin is in direct contact with one surface of the rod cover so as to conduct heat, and another heat-radiating fin may be in direct contact with one surface of the insulator attached to an outer surface of the electrode terminal so as to conduct heat, so that the PTC rod assembly minimizes empty space in an inner space of the rod cover, increases heat transfer efficiency, and is easily manufactured due to a simple structure and reduction in the number of parts.
    Type: Grant
    Filed: June 5, 2009
    Date of Patent: November 25, 2014
    Assignees: Hyundai Motor Company, Kia Motors Corporation, Modine Korea, LLC.
    Inventors: Jae Chan Lim, Man Ju Oh, Duck Chae Jun, Tae Soo Sung
  • Integrated circuit device including through-silicon via structure having offset interface
    Patent number: 8884440
    Abstract: An integrated circuit device includes a substrate through which a first through-hole extends, and an interlayer insulating film on the substrate, the interlayer insulating film having a second through-hole communicating with the first through-hole. A Through-Silicon Via (TSV) structure is provided in the first through-hole and the second through-hole. The TSV structure extends to pass through the substrate and the interlayer insulating film. The TSV structure comprises a first through-electrode portion having a top surface located in the first through-hole, and a second through-electrode portion having a bottom surface contacting with the top surface of the first through-electrode portion and extending from the bottom surface to at least the second through-hole. Related fabrication methods are also described.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: November 11, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su-kyoung Kim, Gil-heyun Choi, Byung-lyul Park, Kwang-jin Moon, Kun-sang Park, Dong-chan Lim, Do-sun Lee
  • Electrode connecting structures containing copper
    Patent number: 8860221
    Abstract: Provided are electrode-connecting structures or semiconductor devices, including a lower device including a lower substrate, a lower insulating layer formed on the lower substrate, and a lower electrode structure formed in the lower insulating layer, wherein the lower electrode structure includes a lower electrode barrier layer and a lower metal electrode formed on the lower electrode barrier layer, and an upper device including an upper substrate, an upper insulating layer formed under the upper substrate, and an upper electrode structure formed in the upper insulating layer, wherein the upper electrode structure includes an upper electrode barrier layer extending from the inside of the upper insulating layer under a bottom surface thereof and an upper metal electrode formed on the upper electrode barrier layer. The lower metal electrode is in direct contact with the upper metal electrode.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: October 14, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kun-Sang Park, Byung-Lyul Park, Su-Kyoung Kim, Kwang-Jin Moon, Suk-Chul Bang, Do-Sun Lee, Dong-Chan Lim, Gil-Heyun Choi
  • Semiconductor device and method of fabricating the same
    Patent number: 8847399
    Abstract: For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substrate after forming the via structure and the protective buffer layer, with the conductive structure not being formed over the via structure. Thus, deterioration of the conductive and via structures is minimized.
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: September 30, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-Lyul Park, Gil-Heyun Choi, Suk-Chul Bang, Kwang-Jin Moon, Dong-Chan Lim, Deok-Young Jung
  • Semiconductor Device and Method of Fabricating the Same
    Publication number: 20140217603
    Abstract: A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.
    Type: Application
    Filed: February 1, 2013
    Publication date: August 7, 2014
    Inventors: Kwang-jin Moon, Pil-Kyu Kang, Dae-Lok Bae, Gil-Heyun Choi, Byung-Lyul Park, Dong-Chan Lim, Deok-Young Jung
  • Method of processing a call in a mobile terminal
    Patent number: 8798672
    Abstract: A method of controlling a mobile terminal, and which includes controlling, via a Windows processor, a plurality of peripheral devices of the mobile terminal; switching, via the Windows processor, the mobile terminal into a sleep state; granting, via an arbiter control processor, a control authority for controlling predetermined peripheral devices among the plurality of peripheral device to a 3G modem when the mobile terminal is switched into the sleep state; receiving, via a communication unit on the mobile terminal, an incoming call; and managing, via the 3G modem, circuit data and the predetermined peripheral devices for the incoming call.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: August 5, 2014
    Assignee: LG Electronics Inc.
    Inventors: Guk-Chan Lim, Yoo-Seung Yang, Joo-Yong Lee, Dong-Chul Jin, Hung-Chol Chin, Sang-Mo Park, Hyun-Jung Park, Hyun-Jun Kim, Haeng-Chul Kwak, Man-Soo Sin
  • RECEIVING DEVICE OF OFDM COMMUNICATION SYSTEM AND METHOD FOR ALLEVIATING PHASE NOISE THEREOF
    Publication number: 20140205030
    Abstract: The present invention relates to a receiving apparatus in an OFDM communication system and a phase noise mitigation method thereof which are configured to estimate and compensate for phase noise from a received OFDM symbol, unlike the conventional receiver which uses a pilot symbol for mitigating phase noise, and thus can improve the transmission efficiency and error rate performance in an OFDM system.
    Type: Application
    Filed: August 8, 2012
    Publication date: July 24, 2014
    Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION
    Inventors: Myung Kyu Lee, Kyeong Cheol Yang, Seung Chan Lim
  • MELT-BLOWN FIBER WEB WITH IMPROVED CONCENTRATION FORCE AND ELASTICITY AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME
    Publication number: 20140127960
    Abstract: Disclosed is a melt-blown fiber web with improved concentration force and elasticity, whereby a melt-blown fabric is cut and sealed at predetermined intervals using knives having arbitrary patterns so that concentration force and elasticity of the melt-blown fiber web can be improved without degrading the inherent function of the fiber web. Further disclosed are a method and apparatus for manufacturing the melt-blown fiber web. The melt-blown fiber web includes thermoplastic filaments, wherein cutting portions and sealing portions are arranged on top and bottom surfaces of the fiber web at predetermined intervals along a thickness of the fiber web so that a concentration force and elasticity of the fiber web are improved.
    Type: Application
    Filed: November 4, 2013
    Publication date: May 8, 2014
    Applicants: HYUNDAI MOTOR COMPANY, IKSUNG CO., LTD., KIA MOTORS CORPORATION
    Inventors: Min Su Kim, Jung Wook Lee, Jae Chan Lim, Won Jin Seo, Hyeon Ho Kim, Jong Hyuk Cha, Ki Wook Yang, Bong Jik Lee
  • OLEFIN BLOCK COPOLYMERS AND PRODUCTION METHODS THEREOF
    Publication number: 20140114033
    Abstract: The present description relates to olefin block copolymers having excellent elasticity and processability in conjunction with enhanced heat resistance, and to a preparation method thereof. The olefin block copolymers comprise a plurality of blocks or segments that comprise ethylene or propylene repeating units and ?-olefin repeating units at different mole fractions from one another, wherein the block copolymer shows peaks at the 2? of 21.5±0.5° and 23.7±0.5° in a wide-angle x-ray diffraction (WAXD) pattern, and the peak ratio defined by (the peak area at 21.5±0.5°)/(the peak area at 23.7±0.5°) is no more than 3.0.
    Type: Application
    Filed: December 30, 2013
    Publication date: April 24, 2014
    Applicant: LG CHEM, LTD.
    Inventors: Yong-Ho LEE, Man-Seong JEON, Heon-Yong KWON, Min-Seok CHO, Seon-Kyoung KIM, Dae-Sik HONG, Se-Hui SOHN, Ki-Soo LEE, Kyoung-Chan LIM
  • CONTROLLERS CONTROLLING NONVOLATILE MEMORY DEVICES AND OPERATING METHODS FOR CONTROLLERS
    Publication number: 20140108748
    Abstract: An operating method of a controller includes selecting bits of code word to be punctured; detecting locations of incapable bits of an input word based on locations of the bits to be punctured and a structure of a generation matrix calculation unit; refreezing the input word such that frozen bits and incapable bits of the input word overlap; generating input word bits by replacing information word bits with frozen bits based on the refreezing result; generating the code word by performing generation matrix calculation on the input word bits; generating output bits by puncturing the code word based on locations of the bits to be punctured; and transmitting the output bits to a nonvolatile memory device.
    Type: Application
    Filed: October 16, 2013
    Publication date: April 17, 2014
    Applicants: POSTECH ACADEMY-INDUSTRY FOUNDATION, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kijun LEE, Junjin KONG, Dong-Min SHIN, Kyeongcheol YANG, Seung-Chan LIM
  • Semiconductor chips and methods of forming the same
    Patent number: 8691692
    Abstract: Provided are a semiconductor chip and a method of manufacturing the same. The semiconductor chip includes a substrate having a first side and a second side facing each other, and a through electrode being disposed in a hole penetrating the substrate, wherein an opening surrounded by the through electrode is disposed in the hole, wherein the opening comprises a first end adjacent to the first side of the substrate and a second end adjacent to the second side of the substrate.
    Type: Grant
    Filed: August 14, 2013
    Date of Patent: April 8, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Chan Lim, Gilheyun Choi, Kwangjin Moon, Deok-Young Jung, Byung-Lyul Park, Dosun Lee