Abstract: A method (of manufacturing a semiconductor device) includes: forming active regions including spacing apart neighboring active regions resulting in corresponding gaps; forming gate structures (overlying the active regions and the gaps) including locating intra-gap segments of the gate structures over the gaps, arranging each intra-gap segment to include two end regions separated by a central region, and at intersections between active regions and gate structures that is designated to be non-functional (flyover intersection), preventing formation of a functional connection between the two; and removing selected portions of at least some of the intra-gap segments including removing central regions of first selected intra-gap segments substantially without removing portions of corresponding end regions of the first selected intra-gap segments, and removing central regions and portions of end regions of second selected intra-gap segments for which corresponding end regions of the second intra-gap segments abut fl

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented substantially parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented substantially parallel to a second direction, the second direction being substantially orthogonal to the first direction. The first gaps are interspersed correspondingly between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into a corresponding one of the first gaps.

Abstract: Penetration-resistant composites and methods of forming penetration-resistant composites are described herein. The penetration-resistant composites include a woven or non-woven substrate; and an elastomeric binder covering at least a portion of the substrate. The elastomeric binder includes a polymeric base and particles dispersed within the polymeric base. The particles include one or more of amorphous silica particles, fumed silica particles, boron nitride particles, calcium chloride particles, aluminum oxide particles, calcium carbonate particles, graphite particles, metallic glass particles and silicon carbide particles. The particles have a concentration in a range of about 0 wt. % to about 80 wt. % of the elastomeric binder and have a size in a range of about 1 nanometers to 100 micrometers.

Abstract: An apparatus for sharing contents includes: a touch screen to sense a user's touch input for one or more contents; a processor to detect the user's touch input, and generate a transmission image according to instructions corresponding to the detected user's touch input to share the one or more contents with an external device; and a communication unit to establish connection with the external device, and transmit the transmission image to the external device.

Abstract: The semiconductor structure includes first and second active regions arranged in a first grid oriented in a first direction. The semiconductor structure further includes gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction. The first and second active regions are separated, relative to the second direction, by a gap. Each gate electrode includes a first segment and a gate extension. Each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?150 nanometers (nm). Each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular.

Abstract: The present application concerns a method for identifying the nature of a bacterial infection from a peritoneal sample, in particular, whether it is a Gram-negative or Gram-positive infection, based upon the determination of one or more cellular and/or humoral markers in a sample.

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented substantially parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented substantially parallel to a second direction, the second direction being substantially orthogonal to the first direction. The first gaps are interspersed correspondingly between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into a corresponding one of the first gaps.

Abstract: A semiconductor structure includes: first and second active regions arranged in a first grid oriented in a first direction; and gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction; wherein: the first and second active regions are separated, relative to the second direction, by a gap; each gate electrode includes a first segment and a gate extension; each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?(?150 nm); and each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular. In an embodiment, the height HEXT is HEXT?(?100 nm).

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented parallel to a second direction, the second direction being orthogonal to the first direction. The first gaps are interspersed between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into the corresponding gap.

Abstract: The present application concerns a method for identifying the nature of a bacterial infection from a peritoneal sample, in particular, whether it is a Gram-negative or Gram-positive infection, based upon the determination of one or more cellular and/or humoral markers in a sample.

Abstract: The present disclosure relates to a modular solar power generation apparatus comprising a base plate, a light guiding unit, a plurality of connection units and a plurality of solar panels wherein: the light guiding unit is installed on the base plate; all connection units are circlewise mounted on the base plate and encircling the light guiding unit; each the solar panel, which is connected to one of the connection units, and the base plate form an angle of inclination by which each the solar panel features upward broadened widths such that any two neighboring solar panels allow their corresponding edges to be adjacent to each other and a gap in between to be narrowed for development of solar panels easily installed and maintained.

Abstract: Method for identifying a bacterial infection The present application concerns a method for identifying the nature of a bacterial infection from a peritoneal sample, in particular, whether it is a Gram-negative or Gram-positive infection, based upon the determination of one or more cellular and/or humoral markers in a sample.

Abstract: Semiconductor device structures with reduced gate end width formed at gate structures and methods for manufacturing the same are provided.

Abstract: Semiconductor device structures with reduced gate end width formed at gate structures and methods for manufacturing the same are provided. In one example, a semiconductor device structure includes a plurality of gate structures formed over a plurality of fin structures, the gate structures formed substantially orthogonal to the fin structures, wherein the plurality of gate structures includes a first gate structure having a first gate end width and a second gate structure having a second gate end width, wherein the second gate end width is shorter than the first gate end width.

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented parallel to a second direction, the second direction being orthogonal to the first direction. The first gaps are interspersed between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into the corresponding gap.

Abstract: A semiconductor structure includes: first and second active regions arranged in a first grid oriented in a first direction; and gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction; wherein: the first and second active regions are separated, relative to the second direction, by a gap; each gate electrode includes a first segment and a gate extension; each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?(?150 nm); and each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular. In an embodiment, the height HEXT is HEXT?(?100 nm).

Abstract: The present disclosure relates to a modular solar power generation apparatus comprising a base plate, a light guiding unit, a plurality of connection units and a plurality of solar panels wherein: the light guiding unit is installed on the base plate; all connection units are circlewise mounted on the base plate and encircling the light guiding unit; each the solar panel, which is connected to one of the connection units, and the base plate form an angle of inclination by which each the solar panel features upward broadened widths such that any two neighboring solar panels allow their corresponding edges to be adjacent to each other and a gap in between to be narrowed for development of solar panels easily installed and maintained.

Abstract: Disclosed herein is a vehicle broadband antenna that is an antenna for LTE & V2X installed in the vicinity of a crash pad of a vehicle. The crash pad broadband antenna is installed in the vicinity of a vehicle crash pad and includes a main PCB, an LTE low-band antenna pattern formed on the main PCB to transmit and receive an LTE low-band signal, a first sub-PCB having LTE high-band antenna patterns configured to transmit and receive an LTE high-band signal, the first sub-PCB being vertically coupled to the main PCB, and a first terminal connected to an external communication module for transmitting and receiving the signals to/from the LTE low-band antenna pattern and the LTE high-band antenna patterns. It is possible to overcome existing spatial limitations by applying the broadband antenna to the vehicle, and to significantly reduce the time required to manufacture and develop an existing mold.

Abstract: Disclosed herein is a vehicle broadband antenna that is an antenna for LTE & V2X installed in the vicinity of a crash pad of a vehicle. The crash pad broadband antenna is installed in the vicinity of a vehicle crash pad and includes a main PCB, an LTE low-band antenna pattern formed on the main PCB to transmit and receive an LTE low-band signal, a first sub-PCB having LTE high-band antenna patterns configured to transmit and receive an LTE high-band signal, the first sub-PCB being vertically coupled to the main PCB, and a first terminal connected to an external communication module for transmitting and receiving the signals to/from the LTE low-band antenna pattern and the LTE high-band antenna patterns. It is possible to overcome existing spatial limitations by applying the broadband antenna to the vehicle, and to significantly reduce the time required to manufacture and develop an existing mold.

Abstract: A monitoring system to monitor a monitoring region includes a number of identifying devices, a number of cameras corresponding to the identifying devices, at least one server, and a monitoring center. The monitoring region includes multiple monitoring sub-regions. The identifying devices are located in the monitoring sub-regions, and identifies a number of signal generating devices entering the monitoring sub-regions. Each camera is located in a corresponding monitoring sub-region, and obtains images of the corresponding monitoring sub-region. The server stores current positions and images of the signal generating devices. The monitoring center searches for a certain signal generating device. If the certain signal generating device is found by the identifying devices, the monitoring center activates the camera corresponding to the monitoring sub-region in which the certain signal generating device is located, and displays images of the certain signal generating device in real time.