Abstract: The present invention relates to a speaker diarization technology, and more specifically to, end-to-end speaker diarization system and method through transformer learning having an auxiliary loss-based residual connection to separate speakers by dividing the speakers for time interval, wherein the end-to-end speaker diarization system and method using an auxiliary loss can differentiate and separate speakers through speaker labeling based on the transformer learning using an auxiliary loss even if speaker speeches overlap in a multi-speaker environment.

Abstract: A method of making a semiconductor structure includes forming a plurality of gate electrodes over a plurality of active regions. The method further includes increasing a width of a portion of each of the plurality of gate electrodes between adjacent active regions of the plurality of active regions, wherein increasing the width of the portion of each of the plurality of gate electrodes comprises increasing the width of less than an entirety of each of the plurality of gate electrodes between the adjacent active regions. The method further includes removing a central region of each of the plurality of gate electrodes, wherein the central region has the increased width, and removing the central region comprises removing less than an entirety of the portion of each of the plurality of gate electrodes.

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and for each active region, a portion of each of some but not all of the gate structures (gate extension) extending partially into the gap; and when viewing the gate structures as a group, the group having a notched profile relative to the second direction, where notches in the notched profile correspond to ones of the gate structures which are substantially free of extending into the gap.

Abstract: A novel Deinococcus radiodurans strain, an exopolysaccharide derived therefrom and a composition comprising the same are provided. In detail, a Deinococcus radiodurans BRD125 strain characterized in being deposited with accession number KCTC 13955BP, an exopolysaccharide derived therefrom and a composition comprising the same, and a method of extracting a Deinococcus radiodurans-derived exopolysaccharide are provided.

Abstract: The present invention relates, in part, to methods for selecting subjects for and treating subjects with a type of immunotherapy based on certain biomarkers from the subjects.

Abstract: A method (of manufacturing a semiconductor device) includes: forming active regions including spacing apart neighboring active regions resulting in corresponding gaps; forming gate structures (overlying the active regions and the gaps) including locating intra-gap segments of the gate structures over the gaps, arranging each intra-gap segment to include two end regions separated by a central region, and at intersections between active regions and gate structures that is designated to be non-functional (flyover intersection), preventing formation of a functional connection between the two; and removing selected portions of at least some of the intra-gap segments including removing central regions of first selected intra-gap segments substantially without removing portions of corresponding end regions of the first selected intra-gap segments, and removing central regions and portions of end regions of second selected intra-gap segments for which corresponding end regions of the second intra-gap segments abut fl

Abstract: A method of making a semiconductor structure includes forming a plurality of gate electrodes over a plurality of active regions. The method further includes increasing a width of a portion of each of the plurality of gate electrodes between adjacent active regions of the plurality of active regions, wherein increasing the width of the portion of each of the plurality of gate electrodes comprises increasing the width of less than an entirety of each of the plurality of gate electrodes between the adjacent active regions. The method further includes removing a central region of each of the plurality of gate electrodes, wherein the central region has the increased width, and removing the central region comprises removing less than an entirety of the portion of each of the plurality of gate electrodes.

Abstract: Systems and methods are described herein for generating enhanced search results utilizing third-party website content within a search engine provided by an electronic catalog of a service provider. This content may be collected in advance of query processing and analyzed to identify a category indicating some attribute of the content (e.g., terms mentioned, topics discussed, object depicted in images/videos/3D data of the content, etc.). Items may be matched to the website through analyzing the textual and/or visual representation data of the website to textual and/or visual representation data associated with an item offered within the electronic catalog. A query may be subsequently received and a third-party website may be identified as being relevant to the search query. In response to the query, the third-party website may be included in a search result list along with images and/or text identifying items pertaining to that website.

Abstract: A nose cleaning system for personal care and hygiene for the nose includes a nose cleaner having a cleaning head that has a textured surface; a neck that is wider than the cleaning head; a gripping body that is of smaller circumference (or perimeter) than the neck, and ergonomically designed to sit well in the fingers; a handle base; and a cover that is connectable to the neck; and a foaming nose cleanser having a pH of about 6. The foaming nose cleanser includes water (90%); a mix of synthetic detergents (6%); humectants or moisture enhancers (1.5%), salt (1.5%); and additives (1%).

Abstract: The semiconductor structure includes first and second active regions arranged in a first grid oriented in a first direction. The semiconductor structure further includes gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction. The first and second active regions are separated, relative to the second direction, by a gap. Each gate electrode includes a first segment and a gate extension. Each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?150 nanometers (nm). Each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular.

Abstract: A method (of manufacturing a semiconductor device) includes: forming active regions including spacing apart neighboring active regions resulting in corresponding gaps; forming gate structures (overlying the active regions and the gaps) including locating intra-gap segments of the gate structures over the gaps, arranging each intra-gap segment to include two end regions separated by a central region, and at intersections between active regions and gate structures that is designated to be non-functional (flyover intersection), preventing formation of a functional connection between the two; and removing selected portions of at least some of the intra-gap segments including removing central regions of first selected intra-gap segments substantially without removing portions of corresponding end regions of the first selected intra-gap segments, and removing central regions and portions of end regions of second selected intra-gap segments for which corresponding end regions of the second intra-gap segments abut fl

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented substantially parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented substantially parallel to a second direction, the second direction being substantially orthogonal to the first direction. The first gaps are interspersed correspondingly between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into a corresponding one of the first gaps.

Abstract: Penetration-resistant composites and methods of forming penetration-resistant composites are described herein. The penetration-resistant composites include a woven or non-woven substrate; and an elastomeric binder covering at least a portion of the substrate. The elastomeric binder includes a polymeric base and particles dispersed within the polymeric base. The particles include one or more of amorphous silica particles, fumed silica particles, boron nitride particles, calcium chloride particles, aluminum oxide particles, calcium carbonate particles, graphite particles, metallic glass particles and silicon carbide particles. The particles have a concentration in a range of about 0 wt. % to about 80 wt. % of the elastomeric binder and have a size in a range of about 1 nanometers to 100 micrometers.

Abstract: An apparatus for sharing contents includes: a touch screen to sense a user's touch input for one or more contents; a processor to detect the user's touch input, and generate a transmission image according to instructions corresponding to the detected user's touch input to share the one or more contents with an external device; and a communication unit to establish connection with the external device, and transmit the transmission image to the external device.

Abstract: Methods to simultaneously test and screen multiplexed, mixed cell populations, e.g., populations comprising genetically heterogeneous cancer cells, in common conditions.

Abstract: The semiconductor structure includes first and second active regions arranged in a first grid oriented in a first direction. The semiconductor structure further includes gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction. The first and second active regions are separated, relative to the second direction, by a gap. Each gate electrode includes a first segment and a gate extension. Each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?150 nanometers (nm). Each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular.

Abstract: The present application concerns a method for identifying the nature of a bacterial infection from a peritoneal sample, in particular, whether it is a Gram-negative or Gram-positive infection, based upon the determination of one or more cellular and/or humoral markers in a sample.

Abstract: A semiconductor device includes: active regions arranged in a first grid oriented substantially parallel to a first direction; and gate electrodes arranged spaced apart in a second grid and overlying corresponding ones of the active regions, the second grid being oriented substantially parallel to a second direction, the second direction being substantially orthogonal to the first direction. The first gaps are interspersed correspondingly between neighboring ones of the active regions. For a flyover intersection at which a corresponding gate electrode crosses over a corresponding active region and for which the gate electrode is not functionally connected to the corresponding active region, the gate electrode does not extend substantially beyond the corresponding active region and so does not extend substantially into a corresponding one of the first gaps.

Abstract: A semiconductor structure includes: first and second active regions arranged in a first grid oriented in a first direction; and gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction; wherein: the first and second active regions are separated, relative to the second direction, by a gap; each gate electrode includes a first segment and a gate extension; each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT?(?150 nm); and each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular. In an embodiment, the height HEXT is HEXT?(?100 nm).