Abstract: Field-effect transistors, and apparatus including such field-effect transistors, including a gate dielectric overlying a semiconductor and a control gate overlying the gate dielectric. The control gate might include an instance of a first polycrystalline silicon-containing material containing polycrystalline silicon, and an instance of a second polycrystalline silicon-containing material containing polycrystalline silicon-germanium or polycrystalline silicon-germanium-carbon.

Abstract: A method includes generating, in coordination with an emergent content engine, a first objective for a first objective-effectuator and a second objective for a second objective-effectuator instantiated in a computer-generated reality (CGR) environment. The first and second objectives are associated with a mutual plan. The method includes generating, based on characteristic values associated with the first and second objective-effectuators a first directive for the first objective-effectuator and a second directive for the second objective-effectuator. The first directive limits actions generated by the first objective-effectuator over a first set of time frames associated with the first objective and the second directive limits actions generated by the second objective-effectuator over a second set of time frames associated with the second objective.

Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels. Upper conductive levels are memory cell levels, and a lower conductive level is a select device level. Conductively-doped semiconductor material is under the select device level. Channel material extends along the memory cell levels and the select device level, and extends into the conductively-doped semiconductor material. A region of the channel material that extends into the conductively-doped semiconductor material is a lower region of the channel material and has a vertical sidewall. Tunneling material, charge-storage material and charge-blocking material extend along the channel material and are between the channel material and the conductive levels. The tunneling material, charge-storage material and charge-blocking material are not along at least a portion of the vertical sidewall of the lower region of the channel material, and the conductively-doped semiconductor material is directly against such portion.

Abstract: Hardware controls associated with features of a scanner are removed, and a combined scanner and transaction terminal is provided without the hardware controls. Operations associated with the removed hardware controls are graphically depicted as selectable window options within scanner-generated windows. The scanner generated windows are provided as a projected human interface for the missing hardware controls. The projected human interface is provided with and accessible from a display that includes transaction windows produced by transaction software of the transaction terminal, such that the selectable window options are always accessible from the display during transaction processing performed by the transaction software.

Abstract: An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.

Abstract: A method includes generating, in coordination with an emergent content engine, a first objective for a first objective-effectuator and a second objective for a second objective-effectuator instantiated in a computer-generated reality (CGR) environment. The first and second objectives are associated with a mutual plan. The method includes generating, based on characteristic values associated with the first and second objective-effectuators a first directive for the first objective-effectuator and a second directive for the second objective-effectuator. The first directive limits actions generated by the first objective-effectuator over a first set of time frames associated with the first objective and the second directive limits actions generated by the second objective-effectuator over a second set of time frames associated with the second objective.

Abstract: In various implementations, a device surveys a scene and presents, within the scene, a extended reality (XR) environment including one or more assets that evolve over time (e.g., change location or age). Modeling such an XR environment at various timescales can be computationally intensive, particularly when modeling the XR environment over larger timescales. Accordingly, in various implementations, different models are used to determine the environment state of the XR environment when presenting the XR environment at different timescales.

Abstract: In one implementation, a method of generating an environment state is performed by a device including one or more processors and non-transitory memory. The method includes obtaining a first environment state of an environment, wherein the first environment state indicates the inclusion in the environment of a first asset associated with a first timescale value and a second asset associated with a second timescale value, wherein the first environment state further indicates that the first asset has a first state of the first asset and the second asset has a first state of the second asset. The method includes determining a second state of the first asset and the second asset based on the first and second timescale value. The method includes determining a second environment state that indicates that the first asset has the second state and the second asset has the second state.

Abstract: Hardware controls associated with features of a scanner are removed, and a combined scanner and transaction terminal is provided without the hardware controls. Operations associated with the removed hardware controls are graphically depicted as selectable window options within scanner-generated windows. The scanner generated windows are provided as a projected human interface for the missing hardware controls. The projected human interface is provided with and accessible from a display that includes transaction windows produced by transaction software of the transaction terminal, such that the selectable window options are always accessible from the display during transaction processing performed by the transaction software.

Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels. Upper conductive levels are memory cell levels, and a lower conductive level is a select device level. Conductively-doped semiconductor material is under the select device level. Channel material extends along the memory cell levels and the select device level, and extends into the conductively-doped semiconductor material. A region of the channel material that extends into the conductively-doped semiconductor material is a lower region of the channel material and has a vertical sidewall. Tunneling material, charge-storage material and charge-blocking material extend along the channel material and are between the channel material and the conductive levels. The tunneling material, charge-storage material and charge-blocking material are not along at least a portion of the vertical sidewall of the lower region of the channel material, and the conductively-doped semiconductor material is directly against such portion.

Abstract: A method of manufacturing a Radio Frequency (RF) coil for a multi-driven RF based negative ion source includes manufacturing a first coil and a second coil using tubes of stainless steel as a substrate material, coating the first coil and the second coil separately; and joining the first coil and the second coil by orbital TIG welding after coating the first coil and the second coil to provide the RF coil for the multi-driven RF based negative ion source.

Abstract: Field-effect transistors, and apparatus including such field-effect transistors, including a gate dielectric overlying a semiconductor and a control gate overlying the gate dielectric. The control gate might include an instance of a first polycrystalline silicon-containing material containing polycrystalline silicon, and an instance of a second polycrystalline silicon-containing material containing polycrystalline silicon-germanium or polycrystalline silicon-germanium-carbon.

Abstract: Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.

Abstract: Some embodiments include an integrated assembly having a semiconductor material with a more-doped region adjacent to a less-doped region. A two-dimensional material is between the more-doped region and a portion of the less-doped region. Some embodiments include an integrated assembly which contains a semiconductor material, a metal-containing material over the semiconductor material, and a two-dimensional material between a portion of the semiconductor material and the metal-containing material. Some embodiments include a transistor having a first source/drain region, a second source/drain region, a channel region between the first and second source/drain regions, and a two-dimensional material between the channel region and the first source; drain region.

Abstract: A data storage system having non-volatile media, a buffer memory, a processing device, and a data pre-fetcher. The data pre-fetcher receives commands to be executed in the data storage system, provides the commands as input to a predictive model, obtains at least one command identified for pre-fetching, as output from the predictive model having the commands as input. Prior to the command being executed in the data storage device, the data pre-fetcher retrieves, from the non-volatile memory, at least a portion of data to be used in execution of the command; and stores the portion of data in the buffer memory. The retrieving and storing the portion of the data can be performed concurrently with the execution of many commands before the execution of the command, to reduce the latency impact of the command on other commands that are executed concurrently with the execution of the command.

Abstract: An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.

Abstract: Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.

Abstract: A control system for a machine operating on a worksite includes a telemetry module associated with the machine. The telemetry module generates signals indicative of operational data of the machine. A controller communicably coupled to the telemetry module receives the signals indicative of the operational data from the telemetry module. The controller processes the received signals to create a data model. The controller identifies multiple operational zones over the worksite based at least on an analysis of the created data model. The controller determines occurrence of work cycles of the machine over the worksite based at least on the identified operational zones. The controller determines productivity data of the worksite based at least on the identified work cycles. The controller controls the machine based on the determined productivity data.

Abstract: A method and system for a content broker, including a unified object index, where the content broker is coupled to the unified object index and receives, from a requesting entity, a request to perform an action on an object and the object is stored in the content repository. The method further including obtaining the object associated with the request from a content repository, determining, using the unified object index, a normalized object type associated with the object, obtaining a governance rule based on the normalized object type, and servicing the request using the governance rule.

Abstract: A data storage system having non-volatile media, a buffer memory, a processing device, and a data pre-fetcher. The data pre-fetcher receives commands to be executed in the data storage system, provides the commands as input to a predictive model, obtains at least one command identified for pre-fetching, as output from the predictive model having the commands as input. Prior to the command being executed in the data storage device, the data pre-fetcher retrieves, from the non-volatile memory, at least a portion of data to be used in execution of the command; and stores the portion of data in the buffer memory. The retrieving and storing the portion of the data can be performed concurrently with the execution of many commands before the execution of the command, to reduce the latency impact of the command on other commands that are executed concurrently with the execution of the command.