Abstract: An illumination system, including a laser light source, a wavelength conversion module, and a polarization conversion unit, and a projection device are provided. A laser beam of the laser light source is converted to a wavelength conversion beam by a wavelength conversion region of the wavelength conversion module. The polarization conversion unit has multiple first polarization conversion regions and multiple second polarization conversion regions, and includes multiple phase delay sheets correspondingly located on multiple surfaces facing the laser light source and located in the second polarization conversion regions. The wavelength conversion beam with a second polarization state leaves the polarization conversion unit after passing through a surface of the polarization conversion unit in the first polarization conversion regions facing the laser light source.

Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Abstract: A chiplet system and a positioning method thereof are provided. The positioning method of the chiplet system includes the following steps. Two end chiplets and a plurality of middle chiplets are classified. A quantity calculation packet is transmitted and accumulated from each of the end chiplets towards another end to analyze a quantity of middle chiplets. A serial number comparison packet is transmitted and accumulated from each of the middle chiplets connected to one of the end chiplets towards another end to set a starting point. An identify number setting packet is transmitted and accumulated from the middle chiplet set as the starting point towards another end to set a positioning number of each of the middle chiplets.

Abstract: A chiplet system with an auto-swapping function and a signal communication method thereof are provided. The chiplet system at least includes a first chiplet and a second chiplet. The signal communication method includes the following steps. The first chiplet and the second chiplet are electrified. The first chiplet and the second chiplet are reset and driven. Through a serial number information, the first chiplet and the second chiplet are identified. A handshaking communication procedure is executed by the first chiplet and the second chiplet to confirm whether a pin connection relationship between the first chiplet and the second chiplet is correct. If the pin connection relationship between the first chiplet and the second chiplet is incorrect, pin function switching is performed by the first chiplet or the second chiplet.

Abstract: The present application discloses method for fabricating a semiconductor device. The method includes providing a substrate; forming a word line trench in the substrate; conformally forming a first insulating layer in the word line trench and conformity forming a first barrier layer on the first insulating layer; conformally forming a first nucleation layer on the first barrier layer; performing a post-treatment to the first nucleation layer, wherein the post-treatment comprises a reducing agent comprising diborane and a tungsten-containing precursor; forming a first bulk layer on the first nucleation layer, wherein the first nucleation layer and the first bulk layer configure a first conductive layer; and performing a planarization process to turn the first insulating layer, the first barrier layer, and the first conductive layer into a word line insulating layer, a word line barrier layer, and a word line conductive layer, respectively and correspondingly.

Abstract: Methods and systems for recovering a host image of a client machine to a recovery machine comprise comparing a profile of a client machine of a first type to be recovered to a profile of a recovery machine of a second type different from the first type, to which the client machine is to be recovered, by a first processing device. The first and second profiles each comprise at least one property of the first type of client machine and the second type of recovery machine, respectively. At least one property of a host image of the client machine is conformed to at least one corresponding property of the recovery machine. The conformed host image is provided to the recovery machine, via a network. The recovery machine is configured with at least one conformed property of the host image by a second processing device of the recovery machine.

Abstract: A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first chip. The dam structure covers the edge of the low-k material layer. The cover is located on the dam structure and covers the sensing area. A manufacturing method of a sensor is also provided.

Abstract: An electronic device is provided. The electronic device includes a substrate; a plurality of first light-emitting elements disposed in a first area of the substrate; a plurality of second light-emitting elements disposed in a second area of the substrate; a first power line disposed on the substrate and electrically connected to the plurality of first light-emitting elements; a second power line disposed on the substrate and electrically connected to the plurality of second light-emitting elements; a first circuit connecting element electrically connected to the first power line; and a first power supply element electrically connected to the first circuit connecting element. A projection of the first area on the substrate does not overlap a projection of the second area on the substrate, and the first area is closer to the first circuit connecting element than the second area.

Abstract: An electronic device may have a display such as an organic light-emitting diode display. The organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. A first passivation layer, a first planarization layer, and a second passivation layer may be formed over the cathode. The first and second passivation layers may be formed from inorganic material. A second planarization layer may be formed over the second passivation layer between the second passivation layer and a polarizer. The second planarization layer may planarize the polarizer at the edges of the active area of the display where the polarizer would otherwise have a steep taper. Planarizing the polarizer in this way mitigates undesirable secondary reflections off of the polarizer. The first and second planarization layers may be formed from organic material.

Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

Abstract: An electrical connector includes at least one terminal assembly. The terminal assembly includes: a first signal terminal and a second signal terminal being narrow-edge coupled; and an insulating block fixing the first signal terminal and the second signal terminal. A length of the first signal terminal is greater than a length of the second signal terminal. A first connecting portion of the first signal terminal is provided with at least one exposing area, which is exposed to the insulating block and exposed in air medium. The first connecting portion has at least one widening portion and at least one narrow portion connected to each other along a length direction thereof. A width of the widening portion is greater than a width of the narrow portion. The exposing area is provided at the widening portion. A second connecting portion of the second signal terminal is completely wrapped in the insulating block.

Abstract: A semiconductor package includes a first die, a second die, and a hybrid-type adhesive. The second die is stacked on the first die through the hybrid-type adhesive. The hybrid-type adhesive includes a conductive adhesive and a non-conductive adhesive. The conductive adhesive is disposed between the non-conductive adhesive and the first die. The non-conductive adhesive is disposed between the conductive adhesive and the second die.

Abstract: The present disclosure provides a method for evaluating prognosis in a patient with breast cancer, including the following steps: (a) detecting the expression level of pyruvate kinase in a sample from the patient; (b) detecting the expression level of O-linked ?-N-acetylglucosamine in the sample; and (c) evaluating a clinical treatment score post-5 years, wherein high expression levels of both the pyruvate kinase and the O-GlcNAc, and high score of the CTS5 indicate that the patient has a poor prognosis. The present disclosure also provides a kit for evaluating prognosis in a patient with breast cancer.

Abstract: A method for increasing power supply voltage in an information handling system in a normal mode with a first peak voltage comprises, in response to receiving a request for a higher peak voltage, an embedded controller (EC) receiving information associated with the application including a request for power at a higher peak voltage, a housekeeping IC communicating a signal to a PWM IC to increase voltage supplied to the information handling system to the higher peak voltage, the PWM IC converting from the PSU to the higher peak voltage and starting a timer with a defined time period. If no additional requests for operating at the higher peak voltage are received before the time period expires, the PWM IC communicates a signal that power will stop being supplied at the higher peak voltage, and the information handling system returns to operating in the normal mode at the first peak voltage.

Abstract: A temperature measuring device includes a device main body, a signal control module, a movable shutter module, and a first and a second non-contacting temperature sensing module. The movable shutter module includes an electric control driver, a movable shutter structure, and an electric control heater, and the movable shutter structure includes a black substance for generating a predetermined heating temperature from being heated by the electric control heater. The first non-contacting temperature sensing module is configured for measuring an object temperature of an object so as to obtain object temperature information of the object. The second non-contacting temperature sensing module is configured for measuring the predetermined heating temperature generated by the black substance of the movable shutter structure so as to obtain black body temperature information of the black substance.

Abstract: In some embodiments, the present disclosure relates to a method that includes forming an isolation structure over a reflector electrode and forming a protective layer over the isolation structure. Further, a first removal process is performed to form a first opening in the protective layer and the isolation structure to expose a first surface of the reflector electrode. A cleaning process is performed to clean the first surface of the reflector electrode. A conductive layer is formed over the protective layer and within the first opening. The conductive layer includes a different material than the protective layer. A second removal process is performed to remove peripheral portions of the protective layer and the conductive layer to form a via structure within the opening, extending through the isolation structure to contact the reflector electrode, and including the protective layer and the conductive layer.

Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Abstract: A homogenizing element includes a light incident end, a light exit end, a first surface, a second surface, a reflective layer and a first dichroic layer. The first surface extends from the light incident end to the light exit end. The second surface extends from the light incident end to the light exit end, and the second surface overlaps the first surface and is non-parallel to the first surface. The first dichroic layer is disposed on the first surface and configured to allow a first beam to pass therethrough and reflect a second beam. The reflective layer is disposed on the second surface and configured to reflect the first beam. A projection device adopting the homogenizing element is also provided. The homogenizing element and the projection device provided can adjust the beam angles of different color beams respectively.

Abstract: A thermal image auxiliary processing method includes the following steps. A reference part is prepared. A reference positioning point or a reference positioning surface is established with the reference part. A cutting tool or a grinding tool is positioned with the reference positioning point or the reference positioning surface. According to a thermal image, a determined positioning point or a determined positioning surface is obtained. Through the above method, the present disclosure can be used for auxiliary positioning and wearing measurement of the cutting tool or the grinding tool, as well as for measuring the size, the angle or flatness of an object to be measured. Therefore, the present disclosure can avoid the problems of increased equipment downtime and realign errors caused by manual and visual measurement.

Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.