Abstract: An antenna structure with wide radiation bandwidth in a reduced physical space includes a housing, a first feed portion, and a second feed portion. The housing includes a metallic side frame, a metallic middle frame, and a metallic back board. The metallic side frame defines first and second gaps, and the metallic back board defines a slot. The slot, the first gap, and the second gap divide the metallic side frame to give a first radiation portion. The first and second feed portions are both electrically connected to the first radiation portion. When the first feed portion supplies a current, the current flows through the first radiation portion, toward the second gap to excite a first working mode. When the second feed portion supplies a current, the current flows through the first radiation portion, toward the first gap to excite a second working mode.

Abstract: A semiconductor device according to the present disclosure includes an active region including a channel region and a source/drain region adjacent the channel region, a vertical stack of channel members over the channel region, a gate structure over and around the vertical stack of channel members, a bottom dielectric feature over the source/drain region, a source/drain feature over the bottom dielectric feature, and a germanium layer disposed between the bottom dielectric feature and the source/drain region.

Abstract: A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. The method further comprises forming a gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain structure and the second source/drain structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A chip transferring method includes providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion chips and a second portion chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion chips from the first load-bearing structure; dividing the first portion chips into a plurality of blocks according to the photoelectric characteristic values, and each of the plurality of blocks comprising multiple chips of the first portion chips; and transferring the multiple chips of one of the plurality of blocks to a second load-bearing structure.

Abstract: A method of processing light-emitting elements includes: placing a plurality of LED dies from original wafers or trays on each trays of a next-stage carrier, based on a predetermined pattern. The predetermined pattern arranges two adjacent LED groups in a first direction on the original wafer or trays to be placed on two non-adjacent positions in the first direction on the tray of the next-stage carrier. The LED dies on the original wafer or trays have a first horizontal pitch and a first vertical pitch. The LED dies on each tray of the next-stage carrier have a second horizontal pitch and a second vertical pitch. The second horizontal pitch is greater than the first horizontal pitch, or the second vertical pitch is greater than the first vertical pitch. Besides, a light-emitting element device using the aforementioned method is also provided.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes forming a plurality of fin structures extending along a first direction over a substrate, forming a low-k isolation strip over the substrate, the low-k isolation strip extending along the first direction and between the plurality of fin structures; and forming a high-k isolation strip on top of the low-k isolation strip.

Abstract: A device includes a substrate, a first nanostructure channel above the substrate and a second nanostructure channel between the first nanostructure channel and the substrate. An inner spacer is between the first nanostructure channel and the second nanostructure channel. A gate structure abuts the first nanostructure channel, the second nanostructure channel and the inner spacer. A liner layer is between the inner spacer and the gate structure.

Abstract: An electric push rod with a dual brake mechanism includes an electric motor, a transmission device, a first brake mechanism and a second brake mechanism. The electric motor has a driving wheel. The transmission device is installed on a side of the electric motor and includes a deceleration mechanism, a lead screw, a driven wheel, and a telescopic pipe. The deceleration mechanism is disposed between the driving wheel and the driven wheel. The lead screw is sheathed with the driven wheel and the driven wheel is driven by the electric motor to rotate together with the lead screw. The telescopic pipe and the lead screw are screwed and driven. The lead screw is sheathed with the first brake mechanism formed on a side edge of the driven wheel. The lead screw is sheathed with the second brake mechanism disposed between the driven wheel and the telescopic pipe.

Abstract: A light-emitting device includes a substrate, a light-emitting diode, a first layer, a color filter layer, and a second layer. The light-emitting diode is disposed on the substrate. The first layer is disposed on the substrate and has an opening. At least a portion of the light-emitting diode is disposed in the opening of the first layer. The color filter layer is disposed on the light-emitting diode. The second layer is disposed on the first layer and has an opening overlapped with the opening of the first layer. The second layer is configured to shield light emitted from the light-emitting diode. In the cross-sectional view of the light-emitting device, the minimum width of the opening of the first layer is less than the minimum width of the opening of the second layer.

Abstract: A manufacturing method of an electronic device includes: providing a first substrate, which has a base layer and a plurality of electronic components disposed on the base layer; adhering adhesive material to each of the plurality of electronic components; providing a target substrate, wherein the target substrate and the first substrate are separated from each other by a distance; and transferring at least part of the plurality of electronic components adhered with the adhesive material to the target substrate through a laser process, wherein at least part of the plurality of electronic components are attached to the target substrate via the adhesive material.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells by chemical reaction. The metal components are then removed by chemical reaction.

Abstract: A semiconductor structure includes a substrate having a first device region and a second device region in proximity to the first device region. A first trench isolation structure is disposed in the substrate between the first device region and the second device region. The first trench isolation structure includes a first bottom surface within the first device region and a second bottom surface within the second device region. The first bottom surface is lower than the second bottom surface. The first trench isolation structure includes a first top surface within the first device region and a second top surface within the second device region. The first top surface is coplanar with the second top surface.

Abstract: A foldable bottle holder (10, 100, 106, 110) includes a foldable wall (12), a sheet (14), and a closure (16). The foldable wall (12) includes a first portion (20) and a second portion (22) that are connected by a hinge (24). A first portion (32) of the sheet (14) is secured to the foldable wall (12), and a second portion (34) of the sheet (14) cooperates with the first portion (20) of the foldable wall (12) to define an opening (36) of the bottle holder (10) so that the sheet (14) forms a bottom wall (38) of the bottle holder (10) connected to the second portion (22) of the foldable wall (12) and so that the foldable wall (12) and the sheet (14) together form side walls (39) of the bottle holder (10) and the opening (36). The closure (16) selectively retains the first portion (20) and the second portion (22) of the foldable wall (12) in a minimized condition of the foldable bottle holder (10) and in open state of the closure (16) allows for a user to carry a bottle (50) in the foldable holder (10).

Abstract: An audio latency calibration method is disclosed. A master speaker and a slave speaker are located at a separation distance from each other, and a paring process is performed. As the paring process is completed, multiple latency time period parameters are obtained relating to the master and slave speakers. The latency time period parameters comprise: T1+T2 representing the time that the master speaker sends an audio signal to the slave speaker, T3+T4 representing the time that the audio signal is transmitted from the slave speaker to a microphone of the master speaker, T5 representing the time that a trumpet of the master speaker plays the audio signal and T3? representing the time that a microphone of the master speaker receives the audio signal. Thus, the way to synchronously play audio signals can be achieved.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: An electronic device and a manufacturing method thereof are provided. The manufacturing method of the electronic device includes the following. A substrate is provided. A plurality of electronic units are transferred to the substrate. The electronic units are inspected to obtain M first defect maps. The M first defect maps are integrated into N second defect maps, where N<M. M repairing groups are provided according to the N second defect maps. Each of the repairing groups includes at least one repairing electronic unit. The M repairing groups are transferred to the substrate. At least two of the repairing groups have the same location distribution of repairing electronic units, and the location distribution is consistent with a defect distribution of one of the second defect maps.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes a semiconductor fin projecting from a substrate. Semiconductor nanostructures are disposed over the semiconductor fin. A gate electrode is disposed over the semiconductor fin and around the semiconductor nanostructures. A dielectric fin is disposed over the substrate. A dielectric structure is disposed over the dielectric fin. An upper surface of the dielectric structure is disposed over the upper surface of the gate electrode. A dielectric layer is disposed over the substrate. The dielectric fin laterally separates both the gate electrode and the semiconductor nanostructures from the dielectric layer. An upper surface of the dielectric layer is disposed over the upper surface of the gate electrode structure and the upper surface of the dielectric structure. A lower surface of the dielectric layer is disposed below the upper surface of the dielectric fin.