Abstract: A composite mounting type electrical connector includes an insulating shell, a plurality of terminals and a plurality of shielding members. The plurality of terminals are arranged in two rows parallel to each other, and a plurality of shielding members are arranged between the two rows of terminals and separated from each other by a predetermined distance to form insulation. The two rows of terminals are soldered to a circuit board by surface mounting technology and dual in line package process respectively. The ground terminals in the two columns of terminals are commonly connected to a shield spacer to form a common ground structure. The power terminals in the two columns of terminals are commonly connected to another shielding member to form a parallel connecting structure. The shielding members produce a shielding effect between two rows of terminals, which can prevent crosstalk therebetween.

Abstract: A method for manufacturing a nanosheet semiconductor device includes: forming a liner layer to cover first and second fin structures, each of the fin structures including a stacked structure, a poly gate disposed on the stacked structure, and inner spacers, the stacked structure including sacrificial features covered by the inner spacers, and channel features disposed to alternate with the sacrificial features; forming a dielectric layer to cover the liner layer, the dielectric layer including an upper portion, a lower portion, and an interconnecting portion that interconnects the upper and lower portions and that laterally covers the liner layer; subjecting the upper and lower portions to a directional treatment; and removing the upper and interconnecting portions of the dielectric layer and a portion of the liner layer, to form a liner and a bottom dielectric insulator disposed on the liner.

Abstract: The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.

Abstract: A smart wearable device has a signal calibration function executed by a signal calibration method and applied to a finger, a limb and/or a neck of a user. The smart wearable device includes at least one physiological signal detector, at least one pressure detector and an operation processor. The at least one physiological signal detector is adapted to abut against a detection area of the user for detecting a physiological signal. The at least one pressure detector is disposed around the at least one physiological signal detector and adapted to detect a pressure value of the detection area. The operation processor is electrically connected with the at least one physiological signal detector and the at least one pressure detector. The operation processor is adapted to optimize the physiological signal when the pressure value exceeds a predefined pressure threshold.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a plurality of semiconductor layers having a first group of semiconductor layers, a second group of semiconductor layers disposed over and aligned with the first group of semiconductor layers, and a third group of semiconductor layers disposed over and aligned with the second group of semiconductor layers. The structure further includes a first source/drain epitaxial feature in contact with a first number of semiconductor layers of the first group of semiconductor layers and a second source/drain epitaxial feature in contact with a second number of semiconductor layers of the third group of semiconductor layers. The first number of semiconductor layers of the first group of semiconductor layers is different from the second number of semiconductor layers of the third group of semiconductor layers.

Abstract: A directional coupler is configured to receive a continuous light waveform and split the waveform into two carrier signals. Ring modulators are configured to receive the carrier signals and binary data and modulate the carrier signals based on the binary data. A combiner is configured to combine the modulated carrier signals into a four-level pulse amplitude modulation (PAM4) signal.

Abstract: A manufacturing method of an electronic device is disclosed by the present disclosure. The manufacturing method includes providing a substrate, wherein the substrate includes a plurality of working areas, and each of the plurality of working areas includes a plurality of first recesses and a plurality of second recesses; disposing a plurality of first electronic units in the plurality of first recesses of the plurality of working areas through fluid transfer; identifying a defective working area from the plurality of working areas, wherein at least one of the plurality of first recesses of the defective working area has no electronic unit or a defective first electronic unit disposed therein; and disposing at least one repairing electronic unit in at least one of the plurality of second recesses of the defective working area through laser transfer.

Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: Provided are FinFET devices and methods of forming the same. A dummy gate having gate spacers on opposing sidewalls thereof is formed over a substrate. A dielectric layer is formed around the dummy gate. An upper portion of the dummy gate is removed and upper portions of the gate spacers are removed, so as to form a first opening in the dielectric layer. A lower portion of the dummy gate is removed to form a second opening below the first opening. A metal layer is formed in the first and second openings. The metal layer is partially removed to form a metal gate.

Abstract: The present disclosure provides an electronic assembly including a semiconductor device package. The semiconductor device package includes a first package and a conductive element. The first package includes an electronic component and a protection layer covering the electronic component. The conductive element is supported by the protection layer and electrically connected with the electronic component through an electrical contact. A method for manufacturing a semiconductor device package is also provided in the present disclosure.

Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.

Abstract: The present invention discloses a connector that utilizes a first connecting portion includes a plurality of terminals and a latching arm that forms a connection end and utilizes a second connecting portion includes a plurality of terminal slots and an engaging groove that be coupled to the connection end of the first connecting portion. The terminals are electrically connected to the terminal slots and the connecting ends are fastened to the engaging arms, and the terminals are electrically connected to the terminal slots. In a state in which the electrical connection is maintained, the first connecting portion and the second connecting portion are disposed in close to or in the same plane by applying an external force to change the first angle between the first connecting portion and the second connecting portion to the second angle.

Abstract: A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.

Abstract: An electronic device and a manufacturing method thereof are provided. The manufacturing method of the electronic device includes the following. A substrate is provided. A plurality of electronic units are transferred to the substrate. The electronic units are inspected to obtain M first defect maps. The M first defect maps are integrated into N second defect maps, where N<M. M repairing groups are provided according to the N second defect maps. Each of the repairing groups includes at least one repairing electronic unit. The M repairing groups are transferred to the substrate. At least two of the repairing groups have the same location distribution of repairing electronic units, and the location distribution is consistent with a defect distribution of one of the second defect maps.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: An industrial heavy load electric linear actuator includes a gearbox (10), an electric motor (20), a lead screw (30), an extension pipe (40) and a load baring structure (50). The electric motor (20) is connected to the gearbox (10). A portion of the lead screw (30) is received inside the gearbox (10) and driven by the electric motor (20), and another portion of the lead screw (30) is extended out of the gearbox (10). The extension pipe (40) is movably fastened to the lead screw (30). The load bearing structure (50) includes a sleeve (51), a bearing (52), a fastening element (53), a fixation seat (54) and a rear supporting seat (55). The sleeve (51) is mounted to the lead screw (30) and holds the bearing (52) jointly with the fastening element (53). The fixation seat (54) and the rear supporting seat (55) hold the bearing (52) at outer perimeters of the sleeve (51) and the fastening element (53).

Abstract: A method of processing light-emitting elements includes: transferring a plurality of light-emitting elements from original wafers or next-stage carriers, based on a predetermined pattern. The predetermined pattern arranges two adjacent LED groups in a first direction on the original wafer or carriers to be placed on two non-adjacent positions in the first direction on the next-stage carriers. The light-emitting elements on the original wafer have a horizontal wafer pitch and a vertical wafer pitch. The light-emitting elements on each of the next-stage carriers have a first horizontal pitch and a first vertical pitch. The first horizontal pitch is greater than the horizontal wafer pitch, or the first vertical pitch is greater than the vertical wafer pitch. Besides, a light-emitting element device using the aforementioned method is also provided.

Abstract: Techniques and examples of determination of receiver (RX) beam for radio link monitoring (RLM) based on available spatial quasi-co-location (QCL) information in New Radio (NR) mobile communications are described. An apparatus receives downlink (DL) signaling from a network. The apparatus determines whether to extend an evaluation period of RLM based on a quasi-co-location (QCL) association provided in at least the DL signaling. The apparatus then executes extension of the evaluation period of the RLM, or not, based on a result of the determining.

Abstract: The present invention discloses a buckle connector connecting a main board and a sub-board. The buckle connector includes a first connecting portion and a second connecting portion. The first connecting portion mainly provides a first coupling member and the second connecting portion mainly provides a second coupling member. The first connecting portion and the second connecting portion are disposed on the same plane by coupling the first coupling member and the second coupling member when the first connecting portion moves to the second connecting portion in one direction.