Abstract: A method of adjusting a position of a tip of an electrode relative to an end of a nebulizer nozzle of a mass spectrometry device includes providing a conduit and the electrode connected to the conduit at a first end of the conduit. The electrode tip is disposed at a first position relative to the nebulizer nozzle end. The pressure gauge is connected to a second end of the conduit. A gas ejection is initiated from the nozzle with the electrode tip at the first position. During the gas ejection, the position of the electrode tip is adjusted from the first position towards a second position relative to the nozzle end. Adjusting the position from the first position towards the second position is terminated when the pressure gauge displays a pressure condition. Once adjusting is terminated, the electrode tip is at the second position.

Abstract: Disclosed are a RISC-V and O-CFI mechanism-based defense method and apparatus for code reuse attacks, comprising: constructing a control flow graph according to program source codes randomized in a basic block order; on the basis of the control flow graph, obtaining a boundary range of a control flow transfer branch; executing the program source codes, obtaining a target node to which each control flow is to be transferred, and analyzing each target node in combination with the boundary range so as to defend against an abnormal control flow. The present invention can identify an illegal control flow transfer with the assistance of RISC-V security hardware according to the characteristics of a program control flow itself, and effectively handle code reuse attacks, thereby enhancing the security defense capabilities of an RISC-V system.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A method of sampling an ejection of a sample from a liquid container includes disposing the liquid container adjacent an open port in-terface. The container includes a sampling port. The open port interface en-gages with the sampling port. The sample from the liquid container is eject-ed, through the sampling port, and into the open port interface. The sample is analyzed with a mass spectrometry device.

Abstract: Disclosed is a semiconductor device and semiconductor fabrication method. A semiconductor device includes: a gate structure over a semiconductor substrate, having a high-k dielectric layer, a p-type work function layer, an n-type work function layer, a dielectric anti-reaction layer, and a glue layer; and a continuous metal cap over the gate structure formed by metal material being deposited over the gate structure, a portion of the anti-reaction layer being selectively removed, and additional metal material being deposited over the gate structure. A semiconductor fabrication method includes: receiving a gate structure; flattening the top layer of the gate structure; precleaning and pretreating the surface of the gate structure; depositing metal material over the gate structure to form a discontinuous metal cap; selectively removing a portion of the anti-reaction layer; depositing additional metal material over the gate structure to create a continuous metal cap; and containing growth of the metal cap.

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.

Abstract: The present disclosure relates to methods and compositions useful for measuring the transcytosis or recycling of a molecule. In particular, the present disclosure relates to in vitro receptor-dependent transcytosis or recycling assays for evaluating the clearance rates of therapeutic antibody molecules and Fc-fusion proteins in humans and animals.

Abstract: Provided are genetically modified animal expressing human or chimeric (e.g., humanized) FcRn, and methods of use thereof.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: A semiconductor device and method for forming the semiconductor device are provided. In some embodiments, a semiconductor substrate comprises a device region. An isolation structure extends laterally in a closed path to demarcate the device region. A first source/drain region and a second source/drain region are in the device region and laterally spaced. A sidewall of the first source/drain region directly contacts the isolation structure at a first isolation structure sidewall, and remaining sidewalls of the first source/drain region are spaced from the isolation structure. A selectively-conductive channel is in the device region, and extends laterally from the first source/drain region to the second source/drain region. A plate comprises a central portion and a first peripheral portion. The central portion overlies the selectively-conductive channel, and the first peripheral portion protrudes from the central portion towards the first isolation structure sidewall.

Abstract: A curved display apparatus is provided, including one or more bending portions where the curved display apparatus is bent. At least the one or more bending portions of the curved display apparatus including a stacked structure, which includes a support layer; a display panel on the support layer; and N number of pressure sensitive adhesive layers and M number of flexible base layers between the support layer and the display panel, N is an integer equal to or greater than 3, M is an integer equal to or greater than 2. A first one of the N number of pressure sensitive adhesive layers adheres the support layer and a first one of the M number of flexible base layers together. A last one of the N number of pressure sensitive adhesive layers adheres the display panel and a last one of the M number of flexible base layers together.

Abstract: A display panel, comprising a first insulating structural layer, a first crack detection line, a second insulating structural layer and a second crack detection line which are sequentially arranged on a substrate, wherein the first crack detection line and the second crack detection line are both located in a peripheral area and are arranged around a display area, one end of the first crack detection line is configured to receive a detection signal, and the other end of the first crack detection line is configured to output a first output signal, and one end of the second crack detection line is configured to receive a detection signal and the other end of the second crack detection line is configured to output a second output signal.

Abstract: The disclosed signal quality assessment is particularly useful for mass spectrometry. In an embodiment of the disclosed system, a processor utilizes a wavelet-based feature extraction for the signal quality assessment of a chromatogram signal. The signal quality assessment may be used to control operational parameters, such as a flowrate of a pump that moves liquid droplets toward an ionization device of a mass spectrometer.

Abstract: A portable electronic device including a first body, a second body, and a hinge mechanism is provided. The second body is connected to the first body through the hinge mechanism, and the hinge mechanism has a basis axis located at the first body and a rotation axis located at a lower end of the second body. When the second body rotates with respect to the first body, the rotation axis slides along an arc shaped path with respect to the basis axis to increase or decrease a distance between the rotation axis and the basis axis and increase or decrease a distance between the lower end of the second body and a back end of the first body.

Abstract: A light path folding element includes a first surface, a second surface, a first reflecting surface and a second reflecting surface. A light travels from the first surface into the light path folding element. The second surface is disposed relative to the first surface along a first direction and is parallel to the first surface, and the first direction is perpendicular to the first surface. The first reflecting surface connects the first surface and the second surface, an acute angle is formed between the first reflecting surface and the first surface, and the light forms an internal reflection via the first reflecting surface. The light forms another internal reflection via the second reflecting surface. The light path folding element further includes a light blocking structure, which extends from at least one of the first surface and the second surface into the light path folding element.

Abstract: A method of forming a semiconductor device includes forming a source/drain region and a gate electrode adjacent the source/drain region, forming a hard mask over the gate electrode, forming a bottom mask over the source/drain region, wherein the gate electrode is exposed, and performing a nitridation process on the hard mask over the gate electrode. The bottom mask remains over the source/drain region during the nitridation process and is removed after the nitridation. The method further includes forming a silicide over the source/drain region after removing the bottom mask.

Abstract: An apparatus may include a first clock generator configured to receive an input clock signal, and generate two or more first-level clock signals of a track-and-hold circuit, a phase interpolator configured to generate an interpolated clock signals, wherein the interpolated clock signal is based on the two or more first-level clock signals, and a second clock generator configured to generate two or more second-level clock signals based on the interpolated clock signal, wherein the phase of the two or more second-level clock signals relative to the phase of a respective first-level clock signal is determined, at least in part, by the phase of the interpolated clock signal.

Abstract: In various examples, techniques for using future trajectory predictions for adaptive cruise control (ACC) are described. For instance, a vehicle may determine a future path(s) of the vehicle and a future path(s) of an object(s). The vehicle may then use a speed profile(s) and the future path(s) to determine a trajectory(ies) for the vehicle. The vehicle may then select a trajectory, such as based on the future path(s) of the object(s). Based on the trajectory, ACC of the vehicle may cause the vehicle to navigate at a speed or a velocity. This way, the vehicle is able to continue using ACC even when the driver makes a maneuver(s) or the system determined to make a maneuver, such as switching lanes or choosing a lane when a road splits.