Patents by Inventor Chang-Rok Moon
Chang-Rok Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11762073Abstract: A 3D image sensor include a depth pixel and at least two polarization pixels adjacent to the depth pixel. The depth pixel includes a charge generation region in a substrate. The depth pixel is configured to generate depth information associated with a depth of an object from the 3D image sensor in a 3D scene based on detecting light reflected from the object. Each polarization pixel includes a photodiode in the substrate and a polarizer on the substrate in a light-incident direction. The polarization pixel is configured to generate shape information associated with a shape of a surface of the object in the 3D scene based on detecting light reflected from the object. The polarization pixels and the depth pixel collectively define a unit pixel. The respective polarizers are associated with different polarization directions.Type: GrantFiled: November 29, 2021Date of Patent: September 19, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Young-gu Jin, Young-chan Kim, Chang-rok Moon, Yong-hun Kwon, Tae-sub Jung
-
Publication number: 20220082673Abstract: A 3D image sensor include a depth pixel and at least two polarization pixels adjacent to the depth pixel. The depth pixel includes a charge generation region in a substrate. The depth pixel is configured to generate depth information associated with a depth of an object from the 3D image sensor in a 3D scene based on detecting light reflected from the object. Each polarization pixel includes a photodiode in the substrate and a polarizer on the substrate in a light-incident direction. The polarization pixel is configured to generate shape information associated with a shape of a surface of the object in the 3D scene based on detecting light reflected from the object. The polarization pixels and the depth pixel collectively define a unit pixel. The respective polarizers are associated with different polarization directions.Type: ApplicationFiled: November 29, 2021Publication date: March 17, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Young-gu JIN, Young-chan KIM, Chang-rok MOON, Yong-hun KWON, Tae-sub JUNG
-
Patent number: 11204415Abstract: A 3D image sensor include a depth pixel and at least two polarization pixels adjacent to the depth pixel. The depth pixel includes a charge generation region in a substrate. The depth pixel is configured to generate depth information associated with a depth of an object from the 3D image sensor in a 3D scene based on detecting light reflected from the object. Each polarization pixel includes a photodiode in the substrate and a polarizer on the substrate in a light-incident direction. The polarization pixel is configured to generate shape information associated with a shape of a surface of the object in the 3D scene based on detecting light reflected from the object. The polarization pixels and the depth pixel collectively define a unit pixel. The respective polarizers are associated with different polarization directions.Type: GrantFiled: March 18, 2019Date of Patent: December 21, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Young-gu Jin, Young-chan Kim, Chang-rok Moon, Yong-hun Kwon, Tae-sub Jung
-
Patent number: 10943939Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.Type: GrantFiled: February 11, 2019Date of Patent: March 9, 2021Inventors: Byung-Jun Park, Chang-Rok Moon, Seung-Hun Shin, Seong-Ho Oh, Tae-Seok Oh, June-Taeg Lee
-
Patent number: 10861891Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.Type: GrantFiled: January 23, 2020Date of Patent: December 8, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Bum Suk Kim, Yun Ki Lee, Jung-Saeng Kim, Jong Hoon Park, Jun Sung Park, Chang Rok Moon
-
Patent number: 10833114Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.Type: GrantFiled: September 30, 2019Date of Patent: November 10, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Bum Suk Kim, Jong Hoon Park, Chang Rok Moon
-
Publication number: 20200176497Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.Type: ApplicationFiled: January 23, 2020Publication date: June 4, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Bum Suk Kim, Yun Ki Lee, Jung-Saeng Kim, Jong Hoon Park, Jun Sung Park, Chang Rok Moon
-
Publication number: 20200103511Abstract: A 3D image sensor include a depth pixel and at least two polarization pixels adjacent to the depth pixel. The depth pixel includes a charge generation region in a substrate. The depth pixel is configured to generate depth information associated with a depth of an object from the 3D image sensor in a 3D scene based on detecting light reflected from the object. Each polarization pixel includes a photodiode in the substrate and a polarizer on the substrate in a light-incident direction. The polarization pixel is configured to generate shape information associated with a shape of a surface of the object in the 3D scene based on detecting light reflected from the object. The polarization pixels and the depth pixel collectively define a unit pixel. The respective polarizers are associated with different polarization directions.Type: ApplicationFiled: March 18, 2019Publication date: April 2, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Young-gu Jin, Young-chan Kim, Chang-rok Moon, Yong-hun Kwon, Tae-sub Jung
-
Publication number: 20200075655Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.Type: ApplicationFiled: November 6, 2019Publication date: March 5, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Bum Suk KIM, Yun Ki LEE, Jung-Saeng KIM, Jong Hoon PARK, Jun Sung PARK, Chang Rok MOON
-
Publication number: 20200027912Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.Type: ApplicationFiled: September 30, 2019Publication date: January 23, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Bum Suk KIM, Jong Hoon PARK, Chang Rok MOON
-
Patent number: 10515992Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.Type: GrantFiled: July 2, 2018Date of Patent: December 24, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Bum Suk Kim, Yun Ki Lee, Jung-Saeng Kim, Jong Hoon Park, Jun Sung Park, Chang Rok Moon
-
Patent number: 10497730Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.Type: GrantFiled: June 21, 2018Date of Patent: December 3, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Bum Suk Kim, Jong Hoon Park, Chang Rok Moon
-
Publication number: 20190229141Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.Type: ApplicationFiled: July 2, 2018Publication date: July 25, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Bum Suk KIM, Yun Ki LEE, Jung-Saeng KIM, Jong Hoon PARK, Jun Sung PARK, Chang Rok MOON
-
Publication number: 20190214420Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.Type: ApplicationFiled: June 21, 2018Publication date: July 11, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Bum Suk Kim, Jong Hoon Park, Chang Rok Moon
-
Publication number: 20190189668Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.Type: ApplicationFiled: February 11, 2019Publication date: June 20, 2019Inventors: BYUNG-JUN PARK, CHANG-ROK MOON, SEUNG-HUN SHIN, SEONG-HO OH, TAE-SEOK OH, JUNE-TAEG LEE
-
Patent number: 10229949Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.Type: GrantFiled: June 16, 2017Date of Patent: March 12, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Byung-Jun Park, Chang-Rok Moon, Seung-Hun Shin, Seong-Ho Oh, Tae-Seok Oh, June-Taeg Lee
-
Patent number: 10033974Abstract: An electronic device is provided. The electronic device includes a first inorganic color filter including a first surface on which light is incident and a second surface opposite the first surface; and a first organic color filter disposed on the first surface of the first inorganic color filter.Type: GrantFiled: July 13, 2015Date of Patent: July 24, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ha-Kyu Choi, Chang-Rok Moon, June-Taeg Lee, Hyung-Jun Kim
-
Patent number: 9853075Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.Type: GrantFiled: October 4, 2016Date of Patent: December 26, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-Ki Lee, Chang-Rok Moon, Min-Wook Jung
-
Publication number: 20170287967Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.Type: ApplicationFiled: June 16, 2017Publication date: October 5, 2017Inventors: BYUNG-JUN PARK, CHANG-ROK MOON, SEUNG-HUN SHIN, SEONG-HO OH, TAE-SEOK OH, JUNE-TAEG LEE
-
Patent number: RE48755Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.Type: GrantFiled: February 5, 2019Date of Patent: September 28, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-Ki Lee, Chang-Rok Moon, Min-Wook Jung