Patents by Inventor Chang-Rok Moon

Chang-Rok Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10943939
    Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: March 9, 2021
    Inventors: Byung-Jun Park, Chang-Rok Moon, Seung-Hun Shin, Seong-Ho Oh, Tae-Seok Oh, June-Taeg Lee
  • Patent number: 10861891
    Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.
    Type: Grant
    Filed: January 23, 2020
    Date of Patent: December 8, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bum Suk Kim, Yun Ki Lee, Jung-Saeng Kim, Jong Hoon Park, Jun Sung Park, Chang Rok Moon
  • Patent number: 10833114
    Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: November 10, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bum Suk Kim, Jong Hoon Park, Chang Rok Moon
  • Publication number: 20200176497
    Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.
    Type: Application
    Filed: January 23, 2020
    Publication date: June 4, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Bum Suk Kim, Yun Ki Lee, Jung-Saeng Kim, Jong Hoon Park, Jun Sung Park, Chang Rok Moon
  • Publication number: 20200103511
    Abstract: A 3D image sensor include a depth pixel and at least two polarization pixels adjacent to the depth pixel. The depth pixel includes a charge generation region in a substrate. The depth pixel is configured to generate depth information associated with a depth of an object from the 3D image sensor in a 3D scene based on detecting light reflected from the object. Each polarization pixel includes a photodiode in the substrate and a polarizer on the substrate in a light-incident direction. The polarization pixel is configured to generate shape information associated with a shape of a surface of the object in the 3D scene based on detecting light reflected from the object. The polarization pixels and the depth pixel collectively define a unit pixel. The respective polarizers are associated with different polarization directions.
    Type: Application
    Filed: March 18, 2019
    Publication date: April 2, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-gu Jin, Young-chan Kim, Chang-rok Moon, Yong-hun Kwon, Tae-sub Jung
  • Publication number: 20200075655
    Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.
    Type: Application
    Filed: November 6, 2019
    Publication date: March 5, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Bum Suk KIM, Yun Ki LEE, Jung-Saeng KIM, Jong Hoon PARK, Jun Sung PARK, Chang Rok MOON
  • Publication number: 20200027912
    Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 23, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Bum Suk KIM, Jong Hoon PARK, Chang Rok MOON
  • Patent number: 10515992
    Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: December 24, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bum Suk Kim, Yun Ki Lee, Jung-Saeng Kim, Jong Hoon Park, Jun Sung Park, Chang Rok Moon
  • Patent number: 10497730
    Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: December 3, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bum Suk Kim, Jong Hoon Park, Chang Rok Moon
  • Publication number: 20190229141
    Abstract: An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.
    Type: Application
    Filed: July 2, 2018
    Publication date: July 25, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Bum Suk KIM, Yun Ki LEE, Jung-Saeng KIM, Jong Hoon PARK, Jun Sung PARK, Chang Rok MOON
  • Publication number: 20190214420
    Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.
    Type: Application
    Filed: June 21, 2018
    Publication date: July 11, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Bum Suk Kim, Jong Hoon Park, Chang Rok Moon
  • Publication number: 20190189668
    Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.
    Type: Application
    Filed: February 11, 2019
    Publication date: June 20, 2019
    Inventors: BYUNG-JUN PARK, CHANG-ROK MOON, SEUNG-HUN SHIN, SEONG-HO OH, TAE-SEOK OH, JUNE-TAEG LEE
  • Patent number: 10229949
    Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: March 12, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-Jun Park, Chang-Rok Moon, Seung-Hun Shin, Seong-Ho Oh, Tae-Seok Oh, June-Taeg Lee
  • Patent number: 10033974
    Abstract: An electronic device is provided. The electronic device includes a first inorganic color filter including a first surface on which light is incident and a second surface opposite the first surface; and a first organic color filter disposed on the first surface of the first inorganic color filter.
    Type: Grant
    Filed: July 13, 2015
    Date of Patent: July 24, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ha-Kyu Choi, Chang-Rok Moon, June-Taeg Lee, Hyung-Jun Kim
  • Patent number: 9853075
    Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: December 26, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yun-Ki Lee, Chang-Rok Moon, Min-Wook Jung
  • Publication number: 20170287967
    Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.
    Type: Application
    Filed: June 16, 2017
    Publication date: October 5, 2017
    Inventors: BYUNG-JUN PARK, CHANG-ROK MOON, SEUNG-HUN SHIN, SEONG-HO OH, TAE-SEOK OH, JUNE-TAEG LEE
  • Patent number: 9728572
    Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.
    Type: Grant
    Filed: December 5, 2014
    Date of Patent: August 8, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-Jun Park, Chang-Rok Moon, Seung-Hun Shin, Seong-Ho Oh, Tae-Seok Oh, June-Taeg Lee
  • Publication number: 20170025461
    Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.
    Type: Application
    Filed: October 4, 2016
    Publication date: January 26, 2017
    Inventors: Yun-Ki LEE, Chang-Rok MOON, Min-Wook JUNG
  • Publication number: 20160365374
    Abstract: A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer; a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer; a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench; and a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer. The third conductive layer may be formed in the via isolation trench.
    Type: Application
    Filed: August 29, 2016
    Publication date: December 15, 2016
    Inventors: Byung-Jun PARK, Seung-Hun SHIN, Chang-Rok MOON, Tae-Seok OH, June-Taeg LEE
  • Patent number: 9461084
    Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: October 4, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yun-Ki Lee, Chang-Rok Moon, Min-Wook Jung