Patents by Inventor Chang-Rok Moon
Chang-Rok Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9728572Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.Type: GrantFiled: December 5, 2014Date of Patent: August 8, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Byung-Jun Park, Chang-Rok Moon, Seung-Hun Shin, Seong-Ho Oh, Tae-Seok Oh, June-Taeg Lee
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Publication number: 20170025461Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.Type: ApplicationFiled: October 4, 2016Publication date: January 26, 2017Inventors: Yun-Ki LEE, Chang-Rok MOON, Min-Wook JUNG
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Publication number: 20160365374Abstract: A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer; a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer; a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench; and a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer. The third conductive layer may be formed in the via isolation trench.Type: ApplicationFiled: August 29, 2016Publication date: December 15, 2016Inventors: Byung-Jun PARK, Seung-Hun SHIN, Chang-Rok MOON, Tae-Seok OH, June-Taeg LEE
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Patent number: 9461084Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.Type: GrantFiled: February 19, 2015Date of Patent: October 4, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-Ki Lee, Chang-Rok Moon, Min-Wook Jung
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Patent number: 9455284Abstract: A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer; a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer; a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench; and a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer. The third conductive layer may be formed in the via isolation trench.Type: GrantFiled: January 22, 2015Date of Patent: September 27, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byung-Jun Park, Seung-Hun Shin, Chang-Rok Moon, Tae-Seok Oh, June-Taeg Lee
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Patent number: 9412774Abstract: An image sensor includes an inorganic color filter, an organic color filter, and a metal pattern. The inorganic color filter is on a support substrate. The organic color filter is on the support substrate. The organic color filter is spaced apart from the inorganic color filter. The metal pattern is between the inorganic color filter and the organic color filter.Type: GrantFiled: March 17, 2015Date of Patent: August 9, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ha-Kyu Choi, Chang-Rok Moon
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Publication number: 20160065914Abstract: An electronic device is provided. The electronic device includes a first inorganic color filter including a first surface on which light is incident and a second surface opposite the first surface; and a first organic color filter disposed on the first surface of the first inorganic color filter.Type: ApplicationFiled: July 13, 2015Publication date: March 3, 2016Inventors: Ha-Kyu CHOI, Chang-Rok MOON, June-Taeg LEE, Hyung-Jun KIM
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Publication number: 20160056188Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.Type: ApplicationFiled: February 19, 2015Publication date: February 25, 2016Inventors: Yun-Ki Lee, Chang-Rok Moon, Min-Wook Jung
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Publication number: 20160035775Abstract: An image sensor includes an inorganic color filter, an organic color filter, and a metal pattern. The inorganic color filter is on a support substrate. The organic color filter is on the support substrate. The organic color filter is spaced apart from the inorganic color filter. The metal pattern is between the inorganic color filter and the organic color filter.Type: ApplicationFiled: March 17, 2015Publication date: February 4, 2016Inventors: Ha-Kyu CHOI, Chang-Rok MOON
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Publication number: 20150311241Abstract: A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer; a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer; a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench; and a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer. The third conductive layer may be formed in the via isolation trench.Type: ApplicationFiled: January 22, 2015Publication date: October 29, 2015Inventors: Byung-Jun PARK, Seung-Hun SHIN, Chang-Rok MOON, Tae-Seok OH, June-Taeg LEE
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Publication number: 20150221695Abstract: A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.Type: ApplicationFiled: December 5, 2014Publication date: August 6, 2015Inventors: Byung-Jun Park, Chang-Rok Moon, Seung-Hun Shin, Seong-Ho Oh, Tae-Seok Oh, June-Taeg Lee
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Patent number: 8958002Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.Type: GrantFiled: October 28, 2013Date of Patent: February 17, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Jun Choi, Yoon-Dong Park, Chris Hong, Dae-Lok Bae, Jung-Chak Ahn, Chang-Rok Moon, June-Mo Koo, Suk-Pil Kim, Hoon-Sang Oh
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Patent number: 8916911Abstract: A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.Type: GrantFiled: July 12, 2011Date of Patent: December 23, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Gil-Sang Yoo, Chang-Rok Moon, Byung-Jun Park, Sang-Hoon Kim, Seung-Hun Shin
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Publication number: 20140264695Abstract: An image sensor includes a semiconductor layer having a first surface and a second surface opposite to each other and including a photodiode and a hydrogen containing region adjacent the first surface. A crystalline anti-reflective layer is on the first surface of the semiconductor layer, and is configured to allow hydrogen atoms to penetrate into the first surface of the semiconductor layer. Driving transistors and wires are on the second surface of the semiconductor layer, and a color filter and a micro lens are on the anti-reflective layer. The hydrogen containing region contains hydrogen atoms that combine with defects at the first surface.Type: ApplicationFiled: March 14, 2014Publication date: September 18, 2014Inventors: Yun-Ki Lee, Chang-Rok Moon, Duck-Hyung Lee
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Patent number: 8736009Abstract: The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.Type: GrantFiled: March 15, 2013Date of Patent: May 27, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Byung Jun Park, Yong Woo Lee, Chang Rok Moon
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Patent number: 8716769Abstract: An image sensor includes a transfer transistor including a vertical gate portion extending in a depth direction of a substrate in an active region of the substrate and photodiode regions located at positions of different depths with respect to a top surface of the substrate in the active region. At least one color adjustment path extends between at least two photodiode regions of the photodiode regions and provides a charge movement path between the at least two photodiode regions.Type: GrantFiled: July 30, 2012Date of Patent: May 6, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hisanori Ihara, Chang-rok Moon
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Publication number: 20140048853Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.Type: ApplicationFiled: October 28, 2013Publication date: February 20, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Sang-Jun Choi, Yoon-Dong Park, Chris Hong, Dae-Lok Bae, Jung-Chak Ahn, Chang-Rok Moon, June-Mo Koo, Suk-Pil Kim, Hoon-Sang Oh
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Patent number: 8633557Abstract: Image sensors include a first insulation interlayer structure on a first surface of a substrate and having a multi-layered structure. A first wiring structure is in the first insulation interlayer structure. A via contact plug extends from a second surface of the substrate and penetrates the substrate to be electrically connected to the first wiring structure. Color filters and micro lenses are stacked on the second surface in a first region of the substrate. A second insulation interlayer structure is on the second surface in a second region of the substrate. A second wiring structure is in the second insulation interlayer structure to be electrically connected to the via contact plug. A pad pattern is electrically connected to the second wiring structure and having an upper surface through which an external electrical signal is applied. Photodiodes are between the first and second wiring structures in the first region.Type: GrantFiled: August 30, 2012Date of Patent: January 21, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Hoon Kim, Chang-Rok Moon
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Patent number: 8614113Abstract: An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.Type: GrantFiled: September 22, 2011Date of Patent: December 24, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yu-Jin Ahn, Duck-Hyung Lee, Jong-Cheol Shin, Chang-Rok Moon, Sang-Jun Choi, Eun-Kyung Park
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Patent number: 8570409Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.Type: GrantFiled: October 22, 2010Date of Patent: October 29, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Jun Choi, Yoon-Dong Park, Chris Hong, Dae-Lok Bae, Jung-Chak Ahn, Chang-Rok Moon, June-Mo Koo, Suk-Pil Kim, Hoon-Sang Oh