Abstract: A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.

Abstract: Provided are an image sensor and a method of forming the image sensor. The image sensor has a base multi-layered reflection layer interposed between a photodiode and an interlayer insulating layer. The photodiode has a first surface adjacent to the interlayer insulating layer and a second surface opposite the first surface. Here, external light is incident on the second surface of the photodiode. Also, the image sensor includes a sidewall multi-layered reflection layer that encloses the photodiode.

Abstract: A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

Abstract: In a solid state imaging device, and a method of manufacture thereof, the efficiency of the transfer of available photons to the photo-receiving elements is increased beyond that which is currently available. Enhanced anti-reflection layer configurations, and methods of manufacture thereof, are provided that allow for such increased efficiency. They are applicable to contemporary imaging devices, such as charge-coupled devices (CCDs) and CMOS image sensors (CISs). In one embodiment, a photosensitive device is formed in a semiconductor substrate. The photosensitive device includes a photosensitive region. An anti-reflection layer comprising silicon oxynitride is formed on the photosensitive region. The silicon oxynitride layer is heat treated to increase a refractive index of the silicon oxynitride layer, and to thereby decrease reflectivity of incident light at the junction of the photosensitive region.

Abstract: A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

Abstract: In a solid state imaging device, and a method of manufacture thereof, the efficiency of the transfer of available photons to the photo-receiving elements is increased beyond that which is currently available. Enhanced anti-reflection layer configurations, and methods of manufacture thereof, are provided that allow for such increased efficiency. They are applicable to contemporary imaging devices, such as charge-coupled devices (CCDs) and CMOS image sensors (CISs). In one embodiment, a photosensitive device is formed in a semiconductor substrate. The photosensitive device includes a photosensitive region. An anti-reflection layer comprising silicon oxynitride is formed on the photosensitive region. The silicon oxynitride layer is heat treated to increase a refractive index of the silicon oxynitride layer, and to thereby decrease reflectivity of incident light at the junction of the photosensitive region.

Abstract: An image sensor is provided. The image sensor includes a substrate; a first isolation region, a second isolation region, a plurality of photoelectric transducer devices, a read element and a floating diffusion region. The second isolation region has a depth that is less than that of the first isolation region. The plurality of photoelectric transducer devices is isolated from one another by the first isolation region. The read element and the floating diffusion region are isolated from the photoelectric transducer devices by the second isolation region.

Abstract: An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.

Abstract: Provided are a semiconductor device and a method of driving the semiconductor device. The semiconductor device includes an optical reaction transistor. The optical reaction transistor includes a semiconductor substrate, a tunnel insulation layer formed on the semiconductor substrate, an optical reaction layer formed on the tunnel insulation layer, a blocking insulation layer formed on the optical reaction layer, and a gate electrode formed on the blocking insulation layer.

Abstract: An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.

Abstract: An image sensor device includes an optical black pixel region and an active pixel region. The image sensor device includes a light receiving unit including a plurality of light sensitive semiconductor devices that are configured to detect light incident thereon, a pixel metal wire layer including a transparent material on the light receiving unit and including a plurality of metal wires therein, and a filter unit on the pixel metal wire layer. The filter unit includes a plurality of filters that are configured to transmit light according to a wavelength thereof. The filters of the filter unit in the optical black pixel region of the image sensor device have a single color. The image sensor device further includes a light blocking layer in the optical black pixel region between the filter unit and the light receiving unit. The light blocking layer is configured to block light that passes through the filter unit.

Abstract: An image sensor and a method of manufacturing the same are disclosed. An image sensor is formed by forming a photoelectric transformation element at a front surface of a semiconductor substrate in an active pixel sensor region and in an optical black region of the semiconductor substrate, subjecting a surface of the semiconductor substrate opposite the front surface to a removal process to create a back surface of the semiconductor substrate, and forming a light blocking film pattern on the back surface in the optical black region. The light blocking film pattern includes an organic material.

Abstract: Provided are an image sensor and a method of forming the image sensor. The image sensor has a base multi-layered reflection layer interposed between a photodiode and an interlayer insulating layer. The photodiode has a first surface adjacent to the interlayer insulating layer and a second surface opposite the first surface. Here, external light is incident on the second surface of the photodiode. Also, the image sensor includes a sidewall multi-layered reflection layer that encloses the photodiode.

Abstract: A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.

Abstract: One example embodiment may include an image sensor including a substrate, and a plurality of microlenses formed on the substrate. Each of the microlenses may include a base lens and a crosslinked overcoating film on a surface of the base lens.

Abstract: An image sensor may include a semiconductor substrate having unit pixel regions on the semiconductor substrate; photoelectric converters formed in the unit pixel regions; interlayer insulating films covering the photoelectric converters and having opening portions formed above the photoelectric converters; a light-transmissive portion filling the opening portions; color filters formed on the light-transmissive portion; and microlenses formed on the color filters. The microlenses may include a plurality of concentric circle patterns and a plurality of arc patterns arranged around the concentric circle patterns. An arc pattern around a specific concentric circle pattern may have a same center as the specific concentric circle pattern.

Abstract: An image sensor and a method of manufacturing same is disclosed. The image sensor implements a reflecting film formed on a front surface of a substrate having a back-illuminated photodetector. The reflecting film operates to reflect wavelengths of light that were not received by the photodetector back to the photodetector to increase the overall sensitivity of the image detector. The reflective film is formed by layering different thicknesses of material with different indices of refraction, resulting in a high reflectance.

Abstract: An image sensor is provided. The image sensor includes a substrate; a first isolation region, a second isolation region, a plurality of photoelectric transducer devices, a read element and a floating diffusion region. The second isolation region has a depth that is less than that of the first isolation region. The plurality of photoelectric transducer devices is isolated from one another by the first isolation region. The read element and the floating diffusion region are isolated from the photoelectric transducer devices by the second isolation region.

Abstract: Provided are color filters formed of alternately stacked inorganic materials having different refractive indices, a color filter array, a method of manufacturing the color filter array, and an image sensor. A color filter can include a substrate and first and second inorganic films configured to filter light of a specific wavelength corresponding to a predetermined color, wherein the first and second inorganic films can be alternately stacked on the substrate and have different refractive indices from each other. The refractive index difference between the first inorganic film and the second inorganic film is at least 0.8. The color filter can be formed by alternately stacking the first and second inorganic films. The first inorganic film and the second inorganic film can have a refractive index of 1.3 to 6.0 in a visible light region of 400 to 700 nm, and can be formed of a material selected from the group consisting of SiO2, SiON, SiN, and Si.

Abstract: A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.