Patents by Inventor Chang-seok Kang

Chang-seok Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10768234
    Abstract: A method for estimating power consumption of a motor includes steps of: determining an error voltage for a terminal voltage of each of multiple phases of the motor, the terminal voltage being supplied from an inverter to the motor; generating a compensation terminal voltage for each of the multiple phases of the motor by applying the error voltage to a prediction value of the terminal voltage that is derived in a preset manner during operation of the motor; and calculating power consumption of the motor by using the compensation terminal voltage and a current value obtained by detecting a current that flows in each of the multiple phases of the motor.
    Type: Grant
    Filed: October 12, 2017
    Date of Patent: September 8, 2020
    Assignees: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION
    Inventors: Dong Hun Lee, Chang Seok You, Min Su Kang, Sung Do Kim
  • Patent number: 10770234
    Abstract: A multilayer capacitor may have a decreased equivalent series resistance (ESR) and improved warpage strength and reliability with conductive resin layers of external electrodes on surfaces where internal electrodes are exposed from a body, intermetallic compounds are in contact with conductive connecting portions of the conductive resin layers and the internal electrodes, and conductive connecting portions are in contact with a plurality of metal particles and second electrode layers.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: September 8, 2020
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Jung Min Kim, Bon Seok Koo, Chang Hak Choi, Hae Sol Kang, Ji Hye Han, Byung Woo Kang
  • Patent number: 10770230
    Abstract: A multilayer ceramic capacitor includes a body including a dielectric layer and first and second internal electrodes, and external electrodes disposed on at least one surface of the body. The external electrodes each includes an electrode layer in contact with the first or second internal electrodes, an intermediate layer disposed on the electrode layer and including a first intermetallic compound, and a conductive resin layer disposed on the intermediate layer and including a plurality of metal particles, a second intermetallic compound and a base resin.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: September 8, 2020
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kun Hoi Koo, Bon Seok Koo, Jung Min Kim, Jun Hyeon Kim, Hae Sol Kang, Soung Jin Kim, Ji Hye Han, Byung Woo Kang, Chang Hak Choi
  • Patent number: 10763167
    Abstract: A vertical semiconductor device includes a conductive pattern structure in which insulation patterns and conductive patterns alternately and repeatedly stacked on the substrate. The conductive pattern structure includes an edge portion having a stair-stepped shape. Each of the conductive patterns includes a pad region corresponding to an upper surface of a stair in the edge portion. A pad conductive pattern is disposed to contact a portion of an upper surface of the pad region. A mask pattern is disposed on an upper surface of the pad conductive pattern. A contact plug penetrates the mask pattern to contact the pad conductive pattern.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: September 1, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung-Hwan Lee, Chang-Seok Kang, Yong-Seok Kim, Jun-Hee Lim, Kohji Kanamori
  • Patent number: 10759664
    Abstract: A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: September 1, 2020
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Won Chul Cho, Myung Won Seo, Hae In Lee, Jae Goo Lee, Ki Kwang Bae, Chang Hee Kim, Jong Won Kim, Chu Sik Park, Kyoung-Soo Kang, Seong Uk Jeong, Hyun Seok Cho
  • Publication number: 20200273621
    Abstract: A multilayered capacitor includes a shock absorbing layer disposed between an upper layer of a capacitor body and a conductive resin layer of an external electrode and between a lower layer of the capacitor body and the conductive resin layer of the external electrode. A length of the shock absorbing layer is longer than that of the conductive resin layer, thereby improving warpage strength characteristics of the capacitor body.
    Type: Application
    Filed: August 12, 2019
    Publication date: August 27, 2020
    Inventors: Jae Seok YI, Jung Min KIM, Chang Hak CHOI, Bon Seok KOO, Byung Woo KANG, Hae Sol KANG, San KYEONG, Jun Hyeon KIM
  • Patent number: 10752114
    Abstract: A motor drive control method is provided for controlling a speed of a motor such that a measured speed value of the motor follows a speed command value. The motor drive control method includes an on/off driving operation of driving a torque of the motor based on the speed command value in such a way that the torque of the motor is repeatedly turned on/off on preset cycle and duty. The motor drive control method and system can markedly enhance efficiency of a motor by reducing switching loss and current ripple loss of an inverter in a low-speed driving period of a high-speed motor.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: August 25, 2020
    Assignees: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Dong Hun Lee, Chang Seok You, Min Su Kang, Sung Do Kim
  • Patent number: 10756601
    Abstract: A control method of a motor rotation speed may include calculating a q-axis potential difference of a synchronous coordinate system for controlling a q-axis current of the synchronous coordinate system based on a target rotation speed of a motor and a measured rotation speed value of the speed sensor, calculating a voltage command of the synchronous coordinate system based on the calculated q-axis potential difference of the synchronous coordinate system, and controlling an inverter connected to the motor according to the calculated voltage command of the synchronous coordinate system.
    Type: Grant
    Filed: August 5, 2018
    Date of Patent: August 25, 2020
    Assignees: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Dong Hun Lee, Sung Do Kim, Chang Seok You, Min Su Kang, Soon Il Jeon
  • Publication number: 20200251151
    Abstract: Memory devices are described. The memory devices include a plurality of bit lines extending through a stack of alternating memory layers and dielectric layers. Each of the memory layers comprises a single crystalline-like silicon layer and includes a first word line, a second word line, a first capacitor, and a second capacitor. Methods of forming stacked memory devices are also described.
    Type: Application
    Filed: February 3, 2020
    Publication date: August 6, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Chang Seok Kang, Tomohiko Kitajima, Gill Yong Lee, Sanjay Natarajan, Sung-Kwan Kang, Lequn Liu
  • Publication number: 20200243554
    Abstract: A three-dimensional semiconductor device and a method of forming the same are provided. The three-dimensional semiconductor device comprises a substrate including first and second areas; first and second main separation patterns, disposed on the substrate and intersecting the first and second areas; gate electrodes disposed between the first and second main separation patterns and forming a stacked gate group, the gate electrodes sequentially stacked on the first area and extending in a direction from the first area to the second area; and at least one secondary separation pattern disposed on the second area, disposed between the first and second main separation patterns, and penetrating through the gate electrodes disposed on the second area. The gate electrodes include pad portions on the second area, and the pad portions are thicker than the gate electrodes disposed on the first area and in contact with the at least one secondary separation pattern.
    Type: Application
    Filed: April 10, 2020
    Publication date: July 30, 2020
    Inventors: Chang Sup LEE, Phil Ouk NAM, Sung Yun LEE, Chang Seok KANG
  • Publication number: 20200233136
    Abstract: A light unit including: a light source; and an optical member that transmits and converts light emitted from the light source, wherein the optical member includes: a light guide; a low refractive index layer that is disposed on the light guide and has a lower refractive index than that of the light guide; a first capping layer that is disposed on the low refractive index layer; and a wavelength conversion layer that is disposed on the first capping layer and includes quantum dots, and the light guide includes a transparent metal oxide.
    Type: Application
    Filed: December 15, 2019
    Publication date: July 23, 2020
    Inventors: Chang Ok KIM, Chul Min BAE, Ji Hye HAN, Tae Wook KANG, Yong Seok KIM, Shin Il CHOI
  • Publication number: 20200235122
    Abstract: Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming, on a substrate, a stack of alternating layers including a first layer of material and a second layer of material different from the first layer of material; forming a memory hole in the stack of alternating layers of the first layer of material and the second layer of material; depositing a layer of blocking oxide on sides defining the memory hole; depositing a layer of silicon atop the layer of blocking oxide to form a silicon channel; deposit core oxide to fill the silicon channel; removing the first layer of material to form spaces between the alternating layers of the second material; and one of depositing a third layer of material to partially fill the spaces to leave air gaps therein or depositing a fourth layer of material to fill the spaces.
    Type: Application
    Filed: August 1, 2019
    Publication date: July 23, 2020
    Inventors: SUNG-KWAN KANG, GILL LEE, CHANG SEOK KANG, TOMOHIKO KITAJIMA
  • Patent number: 10720862
    Abstract: A method of calculating a motor position uses a hall sensor. The method can include determining a motor position in response to a signal change of a hall sensor installed to a motor, calculating a basic compensation value for compensating a motor position error due to signal measurement delay of the hall sensor, determining whether a current command condition for a constant-speed operation of the motor is satisfied, calculating a first-up compensation value and a first-down compensation value, calculating an average values of the deviation between d-q axes current commands, and correcting the motor position using the basic compensation value when a difference between the average values is less than a reference average value.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: July 21, 2020
    Assignees: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Sung Do Kim, Chang Seok You, Min Su Kang, Joon Yong Lee, Dong Hun Lee
  • Publication number: 20200227430
    Abstract: A vertical semiconductor device including a plurality of interlayer insulating layer patterns spaced apart from each other on a substrate and stacked in a vertical direction; a plurality of conductive layer patterns arranged between the interlayer insulating layer patterns and each having a rounded end, wherein at least one of the conductive layer patterns is configured to extend from one side wall of each of the interlayer insulating layer patterns and include a pad region, and the pad region includes a raised pad portion configured to protrude from a surface of the at least one conductive layer pattern; an upper interlayer insulating layer to cover the interlayer insulating layer patterns and the conductive layer patterns; and a contact plug configured to penetrate the upper interlayer insulating layer to be in contact with the raised pad portion of the at least one conductive layer pattern.
    Type: Application
    Filed: March 27, 2020
    Publication date: July 16, 2020
    Inventors: Jo-young Park, Chang-seok Kang, Chang-sup Lee, Se-mee Jang
  • Publication number: 20200220487
    Abstract: A method of correcting a signal delay of a Hall sensor for an air compressor motor when the air compressor motor rotates at a high speed includes: a first step of calculating an offset angle ? from a voltage equation, to which a q-axis voltage and a d-axis voltage are applied, by performing zero current control when an inertia braking section occurs during an operation of the motor; a second step of calculating a reference offset angle ?offset of the Hall sensor and a delay time t by using an angular velocity ? at any two points in the inertia braking section by using the equation for calculating the offset angle ?; and a third step of calculating a corrected q-axis voltage and a corrected d-axis voltage through the zero current control corrected and comparing the corrected q-axis voltage and the corrected d-axis voltage with a reference error.
    Type: Application
    Filed: October 4, 2019
    Publication date: July 9, 2020
    Applicants: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION
    Inventors: Sung-Do Kim, Min-Su Kang, Chang-Seok You, Dong-Hun Lee
  • Publication number: 20200202900
    Abstract: Memory devices are described. The memory devices include a plurality of bit lines extending through a stack of alternating memory layers and dielectric layers. Each of the memory layers include a first word line, a second word line, a first capacitor, and a second capacitor. Methods of forming stacked memory devices are also described.
    Type: Application
    Filed: December 18, 2019
    Publication date: June 25, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Sung-Kwan Kang, Gill Yong Lee, Chang Seok Kang
  • Patent number: 10680011
    Abstract: A vertical semiconductor device includes a conductive pattern structure, a memory layer, a pillar structure, and second and third insulation patterns. The conductive pattern structure includes conductive patterns and insulation layers, and may include a first portion extending in a first direction and a second portion protruding from a sidewall of the first portion. The conductive pattern structures are arranged in a second direction perpendicular to the first direction to form a trench therebetween. The memory layer is formed on sidewalls of the conductive pattern structures. The pillar structures in the trench, each including a channel pattern and a first insulation pattern formed on the memory layer, are spaced apart from each other in the first direction. The second insulation pattern is formed between the pillar structures. The third insulation pattern is formed between some pillar structures, and has a shape different from a shape of the second insulation pattern.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: June 9, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung-Hwan Lee, Chang-Seok Kang, Yong-Seok Kim, Jun-Hee Lim, Kohji Kanamori
  • Patent number: 10672789
    Abstract: A vertical semiconductor device may include a first gate pattern, second gate patterns, a first channel hole, a first semiconductor pattern, a second channel hole, and a second semiconductor pattern. The first gate pattern may extend in a first direction on a substrate including first and second regions. The first direction may be parallel to an upper surface of the substrate, and a portion of the first gate pattern on the second region may include a first opening. The second gate patterns may be vertically stacked and spaced apart from each other on the first gate pattern, and each of the second gate patterns may extend in the first direction. The first channel hole may extend through the second gate patterns and the first gate pattern and expose a first portion of the substrate on the first region of the substrate. The first semiconductor pattern may be at a lower portion of the first channel hole.
    Type: Grant
    Filed: September 3, 2018
    Date of Patent: June 2, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min-Yeong Song, Chang-Seok Kang
  • Patent number: 10658374
    Abstract: A vertical semiconductor device including a plurality of interlayer insulating layer patterns spaced apart from each other on a substrate and stacked in a vertical direction; a plurality of conductive layer patterns arranged between the interlayer insulating layer patterns and each having a rounded end, wherein at least one of the conductive layer patterns is configured to extend from one side wall of each of the interlayer insulating layer patterns and include a pad region, and the pad region includes a raised pad portion configured to protrude from a surface of the at least one conductive layer pattern; an upper interlayer insulating layer to cover the interlayer insulating layer patterns and the conductive layer patterns; and a contact plug configured to penetrate the upper interlayer insulating layer to be in contact with the raised pad portion of the at least one conductive layer pattern.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: May 19, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jo-young Park, Chang-seok Kang, Chang-sup Lee, Se-mee Jang
  • Publication number: 20200144643
    Abstract: A method of controlling an air compressor motor for a fuel cell vehicle is provide. The method includes calculating a counter electromotive force constant of the air compressor motor based on a voltage and a current of the air compressor motor for the fuel cell vehicle supplying air to a fuel cell stack and a rotation speed of the air compressor motor. The method additionally includes determining whether a permanent magnet of the air compressor motor is demagnetized based on a result of comparison between the calculated counter electromotive force constant value and a pre-set counter electromotive force constant design value.
    Type: Application
    Filed: April 16, 2019
    Publication date: May 7, 2020
    Inventors: Sung Do Kim, Min Su Kang, Chang Seok You, Dong Hun Lee