Abstract: The present disclosure, in some embodiments, relates to a polishing system. The polishing system includes a carrier head configured to enclose a wafer. The carrier head has a retainer ring configured to laterally surround the wafer and an abrasive structure that partially covers a lower surface of the retainer ring. A membrane support is surrounded by the retainer ring and defines one or more ports. One or more chambers are coupled to the one or more ports and are defined by the membrane support and a flexible membrane having a lower surface configured to contact the wafer.

Abstract: Some embodiments relate to a method of using a polishing system. In this method, a wafer is secured in a carrier head. The carrier head includes a housing, which includes a retaining ring recess, enclosing the wafer. A retaining ring is positioned in the retaining ring recess. The retaining ring surrounds the wafer, and has a hardness ranging from about 5 shore A to about 80 shore D. The wafer is pressed against a polishing pad, and at least one of the carrier head or the polishing pad is moved relative to the other.

Abstract: Chemical-mechanical polishing (CMP) devices, tools, and methods are disclosed. In some embodiments, a device for a CMP tool includes a carrier and an embedded dummy disk coupled to the carrier. The embedded dummy disk comprises a substrate and a film disposed over the substrate. The carrier is coupleable to an arm of a handler of the CMP tool. The carrier and the embedded dummy disk are adapted to be embedded within a housing of the CMP tool. The embedded dummy disk is adapted to be polished by the CMP tool in preparation for a polishing process for a wafer.

Abstract: In some embodiments, the present disclosure relates to a method of performing a planarization process. The method may be performed by placing a wafer between a carrier head and an upper surface of a polishing pad. The carrier head has a retainer ring configured to surround the wafer, and the retainer ring has an abrasive structure configured to contact the upper surface of the polishing pad. Pressures within one or more chambers surrounded by the carrier head are independently regulated. The one or more chambers have one or more interior surfaces having a flexible membrane. The flexible membrane has a lower surface configured to contact the wafer. At least one of the carrier head or the polishing pad are moved relative to the other, and a roughness of the upper surface of the polishing pad is maintained within a predetermined range by using the abrasive structure of the retainer ring.

Abstract: A fatigue alarm apparatus having a fatigue detector, a control unit and a stimulus alarm generator is illustrated. The fatigue detector detects whether a driver is drowsy. The control unit is electrically connected to the fatigue detector and the stimulus alarm generator. When the fatigue detector detects that the driver is drowsy, the stimulus alarm generator controlled by the control unit to generate two stimulus alarms having a rest time period therebetween, and then, after an interval period elapses, the control unit determines whether an alarming procedure of generating the two stimulus alarms is to be interrupted or repeated, wherein the rest time period is less than the interval period.

Abstract: A method of processing a wafer is disclosed. The method includes, in some embodiments, causing a relative movement between a cleaning brush and a wafer. During the relative movement, a planar cleaning surface of the cleaning brush is brought into contact with a surface of the wafer to remove contaminants from the surface of the wafer. A first size of the cleaning brush, in a plan view, is larger than a second size of the wafer in the plan view.

Abstract: A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.

Abstract: A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.

Abstract: An optical transceiver includes a photoelectric converter, an interposer and a circuit board. The interposer is disposed on the photoelectric converter. The interposer includes a board member and a flexible electrically conductive member disposed on the board member, and the photoelectric converter is electrically connected to the flexible electrically conductive member. The circuit board is disposed on a side of the interposer. The flexible electrically conductive member is remove-ably pressed against the circuit board so that the flexible conductive member is electrically connected to the circuit board.

Abstract: A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.

Abstract: Some embodiments are directed to a wafer polishing tool. The wafer polishing tool includes a first polisher, a second polisher downstream of the first polisher, a third polisher downstream of the second polisher, and a fourth polisher downstream of the third polisher. The first polisher receives a wafer having a front side and a back side with integrated circuit component devices disposed on the front side of the wafer, and polishes a center region on the back side of the wafer. The second polisher receives the wafer via transporting equipment and buffs the center region of the back side of the wafer. The third polisher receives the wafer via the transporting equipment and polishes a back side edge region of the wafer. The fourth polisher receives the wafer via the transporting equipment and buffs the back side edge region of the wafer.

Abstract: A method of manufacturing an integrated circuit device is provided. A first feature, which has a first susceptibility to damage by chemical mechanical processing (CMP), is formed at a first height as measured from an upper surface of the substrate. A second feature, which has a second susceptibility to damage by the CMP, is formed at a second height as measured from the upper surface of the substrate and is laterally spaced from the first feature by a recess. The second height is greater than the first height, and the second susceptibility is less than the first susceptibility. A sacrificial coating is formed in the recess over an uppermost surface of the first feature. CMP is performed to remove a first portion of the sacrificial coating and expose an upper surface of the second feature while leaving a second portion of the sacrificial coating in place over the first feature.

Abstract: An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a polymer coating, CMP to form a planar surface, then plasma etching to effectuate a planar recessing of the polymer coating. The material can be recessed together with the polymer coating, or subsequently with the recessed polymer coating providing a mask. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate.

Abstract: Chemical-mechanical polishing (CMP) devices, tools, and methods are disclosed. In some embodiments, a device for a CMP tool includes a carrier and an embedded dummy disk coupled to the carrier. The embedded dummy disk comprises a substrate and a film disposed over the substrate. The carrier is coupleable to an arm of a handler of the CMP tool. The carrier and the embedded dummy disk are adapted to be embedded within a housing of the CMP tool. The embedded dummy disk is adapted to be polished by the CMP tool in preparation for a polishing process for a wafer.

Abstract: Some embodiments relate to a method of using a polishing system. In this method, a wafer is secured in a carrier head. The carrier head includes a housing, which includes a retaining ring recess, enclosing the wafer. A retaining ring is positioned in the retaining ring recess. The retaining ring surrounds the wafer, and has a hardness ranging from about 5 shore A to about 80 shore D. The wafer is pressed against a polishing pad, and at least one of the carrier head or the polishing pad is moved relative to the other.

Abstract: In some embodiments, the present disclosure relates to a method of performing a planarization process. The method may be performed by placing a wafer between a carrier head and an upper surface of a polishing pad. The carrier head has a retainer ring configured to surround the wafer, and the retainer ring has an abrasive structure configured to contact the upper surface of the polishing pad. Pressures within one or more chambers surrounded by the carrier head are independently regulated. The one or more chambers have one or more interior surfaces having a flexible membrane. The flexible membrane has a lower surface configured to contact the wafer. At least one of the carrier head or the polishing pad are moved relative to the other, and a roughness of the upper surface of the polishing pad is maintained within a predetermined range by using the abrasive structure of the retainer ring.

Abstract: A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H2O2), ammonium persulfate ((NH4)2S2O8), peroxymonosulfuric acid (H2SO5), ozone (O3) in de-ionized water, and sulfuric acid (H2SO4).

Abstract: Some embodiments are directed to a wafer polishing tool. The wafer polishing tool includes a first polisher, a second polisher downstream of the first polisher, a third polisher downstream of the second polisher, and a fourth polisher downstream of the third polisher. The first polisher receives a wafer having a front side and a back side with integrated circuit component devices disposed on the front side of the wafer, and polishes a center region on the back side of the wafer. The second polisher receives the wafer via transporting equipment and buffs the center region of the back side of the wafer. The third polisher receives the wafer via the transporting equipment and polishes a back side edge region of the wafer. The fourth polisher receives the wafer via the transporting equipment and buffs the back side edge region of the wafer.

Abstract: A fuel transmitting device is adapted for use in a gas nail gun which is formed with a combustion chamber and an accommodating chamber, and includes a cylinder cover, a door pivotable between a close position and an open position, and a connector. The cylinder cover is formed with a passage having an inlet that is proximate to the accommodating chamber and an outlet that is proximate to the combustion chamber. The connector has an input opening and an output opening. When the door is at the close position, the connector is received in the accommodating chamber and the output opening communicates with the inlet of the cylinder cover. When the door moves from the close position to the open position, the connector is removed from the accommodating chamber.

Abstract: A carrier head includes a housing configured to enclose a wafer and a retainer ring attached to the housing. The retainer ring includes a body and an abrasive structure. The body includes an inner periphery configured to surround the wafer, an outer periphery, and a surface connecting the inner periphery and the outer periphery. The abrasive structure is attached to the surface of the body.