Abstract: The present disclosure provides a method of fabricating a semiconductor structure in accordance with some embodiments. The method includes receiving a substrate having an active region and an isolation region; forming gate stacks on the substrate that extends from the active region to the isolation region; forming an inner gate spacer and an outer gate spacer on sidewalls of the gate stacks; forming an interlevel dielectric (ILD) layer on the substrate; forming a mask layer over the substrate that exposes a portion of the ILD layer and a portion of the outer gate spacer; selectively etching the exposed portion of the outer gate spacer, resulting in an air gap between the inner gate spacer and the ILD layer; and performing an ion implantation process on the exposed portion of the ILD layer to seal the air gap.

Abstract: A method for forming a semiconductor structure includes forming a gate structure on a substrate; depositing a first dielectric layer over the gate structure; depositing a second dielectric layer over the first dielectric layer and having a different density than the first dielectric layer; performing a first etching process on the first and second dielectric layers to form a trench; performing a second etching process on the first and second dielectric layers to modify the trench; filling a conductive material in the modified trench.

Abstract: The present invention relates to a separator, and a fuel cell stack comprising the same, and according to one aspect of the present invention, there is provided a separator formed of a metallic material and having a plurality of pores, wherein some regions have a hydrophilic surface and some other regions have a hydrophobic surface.

Abstract: A memory device includes a stack of gate electrode layers and interconnect layers arranged over a substrate. A first memory cell that is arranged over the substrate includes a first source/drain conductive lines and a second source/drain conductive line extending vertically through the stack of gate electrode layers. A channel layer and a memory layer are arranged on outer sidewalls of the first and second source/drain conductive lines. A first barrier structure is arranged between the first and second source/drain conductive lines. A first protective liner layer separates the first barrier structure from each of the first and second source/drain conductive lines. A second barrier structure is arranged on an opposite side of the first source/drain conductive line and is spaced apart from the first source/drain conductive line by a second protective liner layer.

Abstract: In some embodiments, the present disclosure relates to a method for forming a memory device, including forming a plurality of word line stacks respectively including a plurality of word lines alternatingly stacked with a plurality of insulating layers over a semiconductor substrate, forming a data storage layer along opposing sidewalls of the word line stacks, forming a channel layer along opposing sidewalls of the data storage layer, forming an inner insulating layer between inner sidewalls of the channel layer and including a first dielectric material, performing an isolation cut process including a first etching process through the inner insulating layer and the channel layer to form an isolation opening, forming an isolation structure filling the isolation opening and including a second dielectric material, performing a second etching process through the inner insulating layer on opposing sides of the isolation structure to form source/drain openings, and forming source/drain contacts in the source/drain

Abstract: A semiconductor memory structure includes a ferroelectric layer and a channel layer formed over the ferroelectric layer. The structure also includes a source structure and a drain structure formed over the channel layer. The structure further includes a first isolation structure formed between the source structure and the drain structure. The source structure extends over the cap layer and towards the drain structure.

Abstract: The present invention relates to a super absorbent polymer exhibiting more improved absorption under pressure and liquid permeability, even while basically maintaining excellent centrifuge retention capacity and absorption rate, and a method for producing the same. The super absorbent polymer comprises: a base polymer powder including a first crosslinked polymer of a water-soluble ethylenically unsaturated monomer having at least partially neutralized acidic groups; and a surface crosslinked layer formed on the base polymer powder and including a second crosslinked polymer in which the first crosslinked polymer is further crosslinked via a surface crosslinking agent, wherein the surface crosslinking agent includes at least two compounds having a solubility parameter value (?) of 12.

Abstract: The present invention relates to a method for preparing spherical cured polymer particles from a curable composition. The method comprises the steps of: dropping a curable composition onto a substrate having a water contact angle of 150° to 170° at 25° C. to form droplets of the curable composition; and curing the droplets to form the polymer particles.

Abstract: A three-dimensional semiconductor memory device including a peripheral circuit structure on a first substrate, the peripheral circuit structure including peripheral circuits, a second substrate on the peripheral circuit structure, an electrode structure on the second substrate, the electrode structure including a plurality of electrodes that are stacked on the second substrate and a penetrating interconnection structure penetrating the electrode structure and the second substrate may be provided. The penetrating interconnection structure may include a lower insulating pattern, a mold pattern structure on the lower insulating pattern, a protection pattern between the lower insulating pattern and the mold pattern structure, and a penetration plug. The penetration plug may penetrate the mold pattern structure and the lower insulating pattern and may be connected to the peripheral circuit structure. The protection pattern may be at a level lower than that of the lowermost one of the electrodes.

Abstract: A semiconductor device includes an upper-level layer having a cell array region, a cell contact region and a dummy region on a substrate. The upper-level layer includes a semiconductor layer, a cell array structure including first and second stack structures sequentially stacked on the semiconductor layer of the cell array region, the first and second stack structures comprising stacked electrodes, a first staircase structure on the semiconductor layer of the cell contact region, the electrodes extending from the cell array structure into the first staircase structure such that the cell array structure is connected to the first staircase structure, a vertical channel structure penetrating the cell array structure, a dummy structure in the dummy region, the dummy structure at the same level as the second stack structure, the dummy structure including stacked first layers, and cell contact plugs in the cell contact region and connected to the first staircase structure.

Abstract: The present disclosure provides a method of fabricating a semiconductor structure in accordance with some embodiments. The method includes receiving a substrate having an active region and an isolation region; forming gate stacks on the substrate and extending from the active region to the isolation region; forming an inner gate spacer and an outer gate spacer on sidewalls of the gate stacks; forming an interlevel dielectric (ILD) layer on the substrate; removing the outer gate spacer in the isolation region, resulting in an air gap between the inner gate spacer and the ILD layer; and performing an ion implantation process to the ILD layer, thereby expanding the ILD layer to cap the air gap.

Abstract: The present invention relates to a ligand-drug conjugate including a ligand; a linker that is connected to the ligand by a covalent bond and has a tris structure represented by a specific structural formula; and an active agent connected to the linker by a covalent bond. In the ligand-drug conjugate, the active agent is bound by the tris structure of the linker, and thus a greater number of active agents can be connected through one linker. Accordingly, a greater number of active agents per antibody binding can be delivered to the target cell, and the drug and/or toxin can stably reach the target cell and effectively exert the drug efficacy.

Abstract: A super absorbent polymer according to the present invention has an excellent discoloration resistance property even under high temperature/high humidity conditions, while maintaining excellent absorption performance, and is preferably used for hygienic materials such as diapers, and thus can exhibit excellent performance.

Abstract: Disclosed herein is a cooking apparatus and a control method thereof. The cooking apparatus includes first and second coils arranged in a first column, third and fourth coils arranged in a second column, a plurality of inverters configured to supply a drive current to the first, second third and fourth coils, a plurality of rectifiers configured to supply direct current (DC) power to the plurality of inverters, a plurality of switches configured to connect each of the plurality of rectifiers to any one of a first external power supply and a second external power supply, and a controller configured to control the plurality of switches wherein the first external power supply supplies power to at least one of the first, second, third, and fourth coils and the second external power supply supplies power to at least one of the first, second, third, and fourth coils.

Abstract: A semiconductor structure includes a semiconductor substrate, a gate structure, an etch stop layer, a dielectric structure, and a conductive material. The gate structure is on the semiconductor substrate. The etch stop layer is over the gate structure. The dielectric structure is over the etch stop layer, in which the dielectric structure has a ratio of silicon to nitrogen varying from a middle layer of the dielectric structure to a bottom layer of the dielectric structure. The conductive material extends through the dielectric structure.

Abstract: An assembly for a seat includes a pivot hub defining multiple rotation axes, and a displacing module attached to the pivot hub. Extendable legs are rotatably coupled to the pivot hub and comprise locking devices movable between an unlocked position, in which the legs, when extended, are enabled to retract, and a locked position, in which the legs, when extended, are prevented from retracting. The legs are rotatable between an intermediate position and a deployed position. When the legs are extended, and when in the intermediate position, the displacing module engages the locking devices to move the locking devices from the locked position to the unlocked position. When the legs are extended, rotating the legs from the intermediate position to the deployed position brings the displacing module out of contact with the locking devices.

Abstract: A light-emitting unit, having a substrate; a first light-emitting body formed on the substrate, and having a first longer side and a first shorter side; a second light-emitting body formed on the substrate, and having a second longer side and a second shorter side which is parallel to the first longer side; a third light-emitting body formed on the substrate, having a third longer side and a third shorter side which is parallel to the first longer side, and electrically connected to the first light-emitting body and the second light-emitting body; a first electrode covering the first light-emitting body and the second light-emitting body, and electrically connecting to the first light-emitting body; a second electrode separated from the first electrode, and covering the second light-emitting body without covering the first light-emitting body; and a transparent element enclosing the first light-emitting body, the second light-emitting body, and the third light-emitting body.

Abstract: The present invention relates to a super absorbent polymer exhibiting more improved absorption under pressure and liquid permeability, even while basically maintaining excellent centrifuge retention capacity and absorption rate, and a method for producing the same. The super absorbent polymer comprises: a base polymer powder including a first crosslinked polymer of a water-soluble ethylenically unsaturated monomer having at least partially neutralized acidic groups; and a surface crosslinked layer formed on the base polymer powder and including a second crosslinked polymer in which the first crosslinked polymer is further crosslinked via a surface crosslinking agent, wherein the surface crosslinking agent includes at least two compounds having a solubility parameter value (?) of 12.

Abstract: A semiconductor device include; a substrate including a cell array region and a key region, a stack structure on the cell array region including vertically stacked electrodes, a dummy structure on the key region, a vertical channel structure penetrating the stack structure to connect the substrate, a dummy pillar penetrating the first dummy structure, an interlayer dielectric layer on the stack structure and the dummy structure, wherein an upper portion of the interlayer dielectric layer on the dummy structure includes a key pattern that vertically overlaps the dummy pillar, and a capping layer on the key region and covering the key pattern.

Abstract: An electric vehicle includes first to fourth motors respectively mounted to individually rotate right and left wheels in the front and rear of the vehicle, first to fourth fuel cell stack modules independently connected to the respective motors so as to supply power to the first to fourth motors, a battery pack for supplying power to the first to fourth motors, a main control part for controlling the first to fourth motors, the first to fourth fuel cell stack modules and the battery pack and a tank for supplying hydrogen gas to the first to fourth fuel cell stack modules.