Abstract: Embodiments of the present disclosure relate to a vehicle seat airbag apparatus, wherein: when a side collision accident occurs, an active vent hole is closed to delay the deployment speed of a front cushion and thus to enable a side cushion so as to have sufficient internal pressure, thereby improving ability to respond to a side collision; and when a frontal collision accident occurs, the active vent hole maintains an open state to rapidly deploy the front cushion, thereby improving ability to respond to a frontal collision.

Abstract: A roof air bag apparatus for a vehicle includes a roof air bag cushion protecting a passenger, and the roof air bag cushion can be separated into a front air bag cushion and a rear air bag cushion. In particular, the front air bag cushion and the rear air bag cushion are unfolded into a space between a front passenger and a rear passenger in a face-to-face mode at the time of occurrence of a car accident, such that the unfolded front air bag cushion protects the front passenger by absorbing an impact force, and the unfolded rear air bag cushion protects the rear passenger by absorbing an impact force.

Abstract: An electronic device includes a storage in which at least one or more programs are stored, a power management circuit, a controller controlling the storage and the power management circuit, a first battery cell connected to the power management circuit, and a second battery cell connected to the storage. At least one of the first battery cell or the second battery cell includes a solid electrolyte.

Abstract: The present disclosure provides a method for preparing a titanium-resin assembly for improving the adhesion strength between a substrate containing titanium and a resin, which includes: a first pore formation step of immersing a substrate comprising titanium in a first solution and forming pores in the substrate by etching the same; a second pore formation step of immersing the substrate having pores formed in the first pore formation step in a second solution and forming another pores by etching the same; an electrolysis step of immersing the substrate that has undergone the second pore formation step in an electrolytic solution and conducting electrolysis; and a molding step of joining the substrate with a polymer resin and conducting injection molding, wherein the first solution is an alkaline solution with a pH>7 and the second solution is an acidic solution with a pH<7.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a gate stack over an active region and a source/drain region in the active region adjacent the gate stack. The source/drain region includes a first semiconductor layer having a first germanium concentration and a second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second germanium concentration greater than the first germanium concentration. The source/drain region further includes a third semiconductor layer over the second semiconductor layer and a fourth semiconductor layer over the third semiconductor layer. The third semiconductor layer has a third germanium concentration greater than the second germanium concentration. The fourth semiconductor layer has a fourth germanium concentration less than the third germanium concentration.

Abstract: A seat airbag apparatus for a vehicle and a method of controlling the operation thereof, includes side cushions deployed from the seatback, front cushions configured to be deployed from the side cushions, and inflators for the side cushions and inflators for the front cushions. The deployment operation of the side cushions and the deployment operation of the front cushions are respectively controlled depending on a normal seating mode and a relax mode of an occupant and a side collision and a front collision of the vehicle.

Abstract: A semiconductor device includes a first device region and a second device region. The first device region includes a first source/drain region extending from a substrate and a first and a second pair of spacers. The first source/drain region extends between the first pair of spacers and the second pair of spacers. The first pair of spacers and the second pair of spacers have a first height. The second device region includes a second and a third source/drain region extending from the substrate and a third and a fourth pair of spacers. The third source/drain region is separate from the second source/drain region. The second source/drain region extends between the third pair of spacers. The third source/drain region extends between the fourth pair of spacers. The third pair of spacers and the fourth pair of spacers have a second height greater than the first height.

Abstract: In an embodiment, a method includes forming a first fin and a second fin within an insulation material over a substrate, the first fin and the second fin includes different materials, the insulation material being interposed between the first fin and the second fin, the first fin having a first width and the second fin having a second width; forming a first capping layer over the first fin; and forming a second capping layer over the second fin, the first capping layer having a first thickness, the second capping layer having a second thickness different from the first thickness.

Abstract: A seat airbag apparatus for a vehicle is disclosed. A side cushion is deployed so as to protrude forward from a seatback in order to protect the lateral sides of an occupant, and a front cushion is deployed so as to protrude from the side cushion to the front of the occupant in order to protect the front side of the occupant. The deployment of the side cushion and the front cushion is limited by an upper dual-surface tether structure, formed by an upper-side surface tether and an upper-front surface tether, and a lower dual-surface tether structure, formed by a lower-side surface tether and a lower-front surface tether, thereby increasing force with which movement of the occupant is restricted, thus further enhancing an occupant protection effect.

Abstract: A seat belt to increase a force for restraining a passenger's lower body in a sitting state of a relaxation mode while satisfying existing laws in a normal sitting state and to a movement control method thereof includes an anchor unit provided on a lower portion of a first side surface of a seat and configured for allowing webbing of the seat belt to be locked thereto and an anchor moving apparatus configured to move the anchor unit forwards and backwards thereof, and to a movement control method thereof.

Abstract: A fan blade device includes a plurality of main fan blades and extension fan blades. Each main fan blade includes a main fan blade body arranged obliquely, a plurality of first protrusions, and at least one engaging groove. Each extension fan blade includes an extension fan blade body arranged obliquely and having a top surface that is contiguously flush with a top surface of the main fan blade body of a respective main fan blade, a plurality of second protrusions respectively abutting against the first protrusions of the respective main fan blade, and at least one engaging piece engaging the at least one engaging groove of the respective main fan blade.

Abstract: An apparatus for deploying a display unit includes: a cowl cross bar disposed inside a crash pad; a housing disposed on the cowl cross bar and fastened to a center part of the crash pad; a display unit configured to be deployed along the housing; a rotating unit configured to rotate the housing with respect to the cowl cross bar; a driving unit coupled to the cowl cross bar in order to cause sliding movement of the cowl cross bar; and a controller configured to control at least one of the extent of deployment of the display unit, the amount of sliding movement of the cowl cross bar, or the amount of rotation of the housing.

Abstract: A method includes etching a semiconductor substrate to form a trench between a first semiconductor strip and a second semiconductor strip. The first semiconductor strip has a first width at about 5 nm below a top of the first semiconductor strip and a second width at about 60 nm below the top of the first semiconductor strip. The first width is smaller than about 5 nm, and the second width is smaller than about 14.5 nm. The trench is filled with dielectric materials to form an isolation region, which is recessed to have a depth. A top portion of the first semiconductor strip protrudes higher than the isolation region to form a protruding fin. The protruding fin has a height smaller than the depth. A gate stack is formed to extend on a sidewall and a top surface of the protruding fin.

Abstract: A fan blade device includes a plurality of main fan blades and extension fan blades. Each main fan blade includes a main fan blade body arranged obliquely, a plurality of first protrusions, and at least one engaging groove. Each extension fan blade includes an extension fan blade body arranged obliquely and having a top surface that is contiguously flush with a top surface of the main fan blade body of a respective main fan blade, a plurality of second protrusions respectively abutting against the first protrusions of the respective main fan blade, and at least one engaging piece engaging the at least one engaging groove of the respective main fan blade.

Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a substrate. A fin is on the substrate. The fin includes silicon germanium. An interfacial layer is over the fin. The interfacial layer has a thickness in a range from greater than 0 nm to about 4 nm. A source/drain region is over the interfacial layer. The source/drain region includes silicon germanium.

Abstract: A method includes etching a trench in a substrate adjacent to a gate structure, wherein the trench includes a bottom surface and a tip portion extending under a spacer of the gate structure. The method further includes epitaxially growing a first semiconductor material in the trench, wherein the first semiconductor material covers an entirety of the bottom surface of the trench, and the first semiconductor material grows in the tip portion. The method further includes epitaxially growing a second semiconductor material in the trench, wherein the second semiconductor material is different from the first semiconductor material, the second semiconductor material covers the first semiconductor material, and the second semiconductor material directly contacts the substrate between the bottom surface of the trench and the tip portion.

Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a substrate. A fin is on the substrate. The fin includes silicon germanium. An interfacial layer is over the fin. The interfacial layer has a thickness in a range from greater than 0 nm to about 4 nm. A source/drain region is over the interfacial layer. The source/drain region includes silicon germanium.

Abstract: A semiconductor device includes a first device region and a second device region. The first device region includes a first source/drain region extending from a substrate and a first and a second pair of spacers. The first source/drain region extends between the first pair of spacers and the second pair of spacers. The first pair of spacers and the second pair of spacers have a first height. The second device region includes a second and a third source/drain region extending from the substrate and a third and a fourth pair of spacers. The third source/drain region is separate from the second source/drain region. The second source/drain region extends between the third pair of spacers. The third source/drain region extends between the fourth pair of spacers. The third pair of spacers and the fourth pair of spacers have a second height greater than the first height.

Abstract: A method includes forming a fin over a substrate, forming an isolation region adjacent the fin, forming a dummy gate structure over the fin, and recessing the fin adjacent the dummy gate structure to form a first recess using a first etching process. The method also includes performing a plasma clean process on the first recess, the plasma clean process including placing the substrate on a holder disposed in a process chamber, heating the holder to a process temperature between 300° C. and 1000° C., introducing hydrogen gas into a plasma generation chamber connected to the process chamber, igniting a plasma within the plasma generation chamber to form hydrogen radicals, and exposing surfaces of the recess to the hydrogen radicals. The method also includes epitaxially growing a source/drain region in the first recess.

Abstract: A method includes forming a gate structure over fins protruding from a semiconductor substrate; forming an isolation region surrounding the fins; depositing a spacer layer over the gate structure and over the fins, wherein the spacer layer fills the regions extending between pairs of adjacent fins; performing a first etch on the spacer layer, wherein after performing the first etch, first remaining portions of the spacer layer that are within inner regions extending between pairs of adjacent fins have a first thickness and second remaining portions of the spacer layer that are not within the inner regions have a second thickness less than the first thickness; and forming an epitaxial source/drain region adjacent the gate structure and extending over the fins, wherein portions of the epitaxial source/drain region within the inner regions are separated from the first remaining portions of the spacer layer.