Abstract: A semiconductor device includes a substrate, an interconnect structure, and conductive vias. The substrate has a first side, a second side and a sidewall connecting the first side and the second side, wherein the sidewall includes a first planar sidewall of a first portion of the substrate, a second planar sidewall of a second portion of the substrate and a curved sidewall of a third portion of the substrate, where the first planar sidewall is connected to the second planar sidewall through the curved sidewall. The interconnect structure is located on the first side of the substrate, where a sidewall of the interconnect structure is offset from the second planar sidewall. The conductive vias are located on the interconnect structure, where the interconnect structure is located between the conductive vias and the substrate.

Abstract: The present invention provides a control method of a processor, wherein the control method comprises the steps of: transmitting image data of a first frame to an integrated circuit, wherein the first frame corresponds to a first frame rate; determining a second frame rate of a second frame next to the first frame; determining if a difference between the second frame rate and the first frame rate belongs to a large scale frame rate adjustment or a small scale frame rate adjustment; if the difference between the second frame rate and the first frame rate belongs to the large scale frame rate adjustment, using a first mode to transmit image data of the second frame; and if the difference between the second frame rate and the first frame rate belongs to the small scale frame rate adjustment, using a second mode to transmit image data of the second frame.

Abstract: An electronic package is provided. The electronic package includes a semiconductor substrate. The semiconductor substrate includes a first active region and a first passive region separated from the first active region. The first active region is configured to regulate a power signal. The first passive region is configured to transmit a data signal.

Abstract: A submicron-sized Pickering miniemulsion system stabilized by carbon quantum dots solid nanoparticles for biphasic catalysis is disclosed, which breaks the existing limits for homogenization of the immiscible biphasic system and overcomes the issues for big size of solid particles-stabilized emulsion droplets. A method for producing the carbon quantum dot-based catalysts and a process of establishing the Pickering miniemulsion system for biphasic reaction with enhanced catalytic efficiency are also disclosed. The carbon quantum dot-stabilized Pickering miniemulsion features a pH-responsive behavior, with a reversible transition between the emulsification and demulsification, triggering the easy & facile product separation and emulsifier/catalyst recycling in one reaction vessel.

Abstract: A device includes a substrate; semiconductor fins extending from the substrate; a liner layer on sidewalls of the semiconductor fins; an etch stop layer over the substrate and extending laterally from a first portion of the liner layer on a first one of the semiconductor fins to a second portion of the line layer on a second one of the semiconductor fins; an isolation structure over the etch stop layer, wherein the etch stop layer and the isolation structure include different materials; a gate dielectric layer over a top surface of the isolation structure; and a dielectric feature extending through the gate dielectric layer and into the isolation structure, wherein the isolation structure and the dielectric feature collectively extend laterally from the first portion of the liner layer to the second portion of the line layer.

Abstract: A semiconductor memory device includes a first word line formed over a first active region. In some embodiments, a first metal line is disposed over and perpendicular to the first word line, where the first metal line is electrically connected to the first word line using a first conductive via, and where the first conductive via is disposed over the first active region. In some examples, the semiconductor memory device further includes a second metal line and a third metal line both parallel to the first metal line and disposed on opposing sides of the first metal line, where the second metal line is electrically connected to a source/drain region of the first active region using a second conductive via, and where the third metal line is electrically connected to the source/drain region of the first active region using a third conductive via.

Abstract: A blood pressure device includes a first blood pressure measuring device, a second blood pressure measuring device, and a controller. The first blood pressure measuring device is to be worn on a first position of a wrist so as to obtain a first blood pressure information of the first position. The second blood pressure measuring device is to be worn on a second position of the wrist so as to obtain a second blood pressure information of the second position. The controller is electrically coupled to the first blood pressure measuring device and the second blood pressure measuring device so as to adjust tightness between the expanders and the user's skin, respectively. The controller receives, processes, and calculates a pulse transit time between the first blood pressure information and the second blood pressure information, and the controller obtains at least one blood pressure value based on the pulse transit time.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: Embodiments of the present disclosure provide a method for forming semiconductor device structures. The method includes forming a fin structure having a stack of semiconductor layers comprising first semiconductor layers and second semiconductor layers alternatingly arranged, forming a sacrificial gate structure over a portion of the fin structure, removing the first and second semiconductor layers in a source/drain region of the fin structure that is not covered by the sacrificial gate structure, forming an epitaxial source/drain feature in the source/drain region, removing portions of the sacrificial gate structure to expose the first and second semiconductor layers, removing portions of the second semiconductor layers so that at least one second semiconductor layer has a width less than a width of each of the first semiconductor layers, forming a conformal gate dielectric layer on exposed first and second semiconductor layers, and forming a gate electrode layer on the conformal gate dielectric layer.

Abstract: Embodiments include a crack stopper structure surrounding an embedded integrated circuit die, and the formation thereof. The crack stopper structure may include multiple layers separated by a fill layer. The layers of the crack stopper may include multiple sublayers, some of the sublayers providing adhesion, hardness buffering, and material gradients for transitioning from one layer of the crack stopper structure to another layer of the crack stopper structure.

Abstract: A device includes a semiconductor fin, a gate structure, gate spacers, and a dielectric feature. The semiconductor fin is over a substrate. The gate structure is over the semiconductor fin and includes a gate dielectric layer over the semiconductor fin and a gate metal covering the gate dielectric layer. The gate spacers are on opposite sides of the gate structure. The dielectric feature is over the substrate. The dielectric feature is in contact with the gate metal, the gate dielectric layer, and the gate spacers, and an interface between the gate metal and the dielectric feature is substantially aligned with an interface between the dielectric feature and one of the gate spacers.

Abstract: A semiconductor device having a low-k isolation structure and a method for forming the same are provided. The semiconductor device includes channel structures, laterally extending on a substrate; gate structures, intersecting and covering the channel structures; and a channel isolation structure, laterally penetrating through at least one of the channel structures, and extending between separate sections of one of the gate structures along an extending direction of the one of the gate structures. A low-k dielectric material in the channel isolation structure comprises boron nitride.

Abstract: In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.

Abstract: The present disclosure describes fabricating devices with tunable gate height and effective capacitance. A method includes forming a first metal gate stack in a dummy region of a semiconductor substrate and a second metal gate stack in an active device region of the semiconductor substrate, and performing a chemical mechanical polishing (CMP) process using a slurry including charged abrasive nanoparticles. The first and second metal gate stacks are different in composition. The charged abrasive nanoparticles include a first concentration in the active device region different from a second concentration in the dummy region.

Abstract: Semiconductor packages and methods of forming the same are disclosed. An semiconductor package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.

Abstract: The present disclosure describes fabricating devices with tunable gate height and effective capacitance. A method includes forming a first metal gate stack in a dummy region of a semiconductor substrate, the first metal gate stack including a first work function metal (WFM) layer; forming a second metal gate stack in an active device region of the semiconductor substrate, the second metal gate stack including a second WFM layer different than the first WFM layer; and performing a CMP process using a slurry including charged abrasive nanoparticles. The charged abrasive nanoparticles include a first concentration in the active device region different from a second concentration in the dummy region causing different polish rates in the active device region and dummy region. After the performing of the CMP process, the first metal gate stack has a first height different from a second height of the second metal gate stack.

Abstract: Provided is a device with a replacement spacer structure and a method for forming such a structure. The method includes forming an initial spacer structure, wherein the initial spacer structure has an initial etch rate for a selected etchant. The method further includes removing a portion of the initial spacer structure, wherein a remaining portion of the initial spacer structure is not removed. Also, the method includes forming a replacement spacer structure adjacent to the remaining portion of the initial spacer structure to form a combined spacer structure, wherein the combined spacer structure has an intermediate etch rate for the selected etchant that is less than the initial etch rate for a selected etchant. Further, the method includes etching the combined spacer structure with the selected etchant to form a final spacer structure.

Abstract: An exogenous biomolecular tracing method includes: extracting a nucleotide marker from a marker source organism; combining a basic material with the nucleotide marker to form a nucleotide marked material; exogenously combining an aquatic creature or an aquatic product to form an exogenously-marked aquatic creature or an exogenously-marked aquatic product; and identifying a DNA sample from the exogenously-marked aquatic creature or the exogenously-marked aquatic product with at least one primer pair in an exogenous biomolecular tracing procedure to obtain an exogenously-marked identification result.

Abstract: A biomolecular characteristic identification method includes: breeding a plurality of Taiwan Tilapias in a predetermined environment to obtain a plurality of baited Taiwan Tilapias; seeking at least one nucleotide mark in the baited Taiwan Tilapias to obtain at least one feature sequence marker therefrom; producing at least one design of primer pair according to the feature sequence marker for identification; and identifying an unknown DNA sample of the baited Taiwan Tilapias with the at least one primer pair in a biomolecular tracing procedure to obtain an identification result.