Patents by Inventor Chang Wen
Chang Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220254789Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.Type: ApplicationFiled: April 25, 2022Publication date: August 11, 2022Inventors: MING-CHANG WEN, KUO-HSIU HSU, JYUN-YU TIAN, WAN-YAO WU, CHANG-YUN CHANG, HUNG-KAI CHEN, LIEN JUNG HUNG
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Publication number: 20220246578Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.Type: ApplicationFiled: April 19, 2022Publication date: August 4, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
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Patent number: 11387322Abstract: Embodiments of the present disclosure provide semiconductor device structures having at least one T-shaped stacked nanosheet transistor to provide increased effective conductive area across the channel regions. In one embodiment, the semiconductor device structure includes a first channel layer formed of a first material, wherein the first channel layer has a first width, and a second channel layer formed of a second material different from the first material, wherein the second channel layer has a second width less than the first width, and the second channel layer is in contact with the first channel layer. The structure also includes a gate dielectric layer conformally disposed on the first channel layer and the second channel layer, and a gate electrode layer disposed on the gate dielectric layer.Type: GrantFiled: September 21, 2020Date of Patent: July 12, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Ching Wang, Wei-Yang Lee, Ming-Chang Wen, Jo-Tzu Hung, Wen-Hsing Hsieh, Kuan-Lun Cheng
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Patent number: 11342444Abstract: A method includes forming a first and a second dummy gate stack crossing over a semiconductor region, forming an ILD to embed the first and the second dummy gate stacks therein, replacing the first and the second dummy gate stacks with a first and a second replacement gate stack, respectively, performing a first etching process to form a first opening. A portion of the first replacement gate stack and a portion of the second replacement gate stack are removed. The method further includes filling the first opening to form a dielectric isolation region, performing a second etching process to form a second opening, with the ILD being etched, and the dielectric isolation region being exposed to the second opening, forming a contact spacer in the second opening, and filling a contact plug in the second opening. The contact plug is between opposite portions of the contact spacer.Type: GrantFiled: September 19, 2019Date of Patent: May 24, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Gang Chen, Tai-Chun Huang, Ming-Chang Wen, Shu-Yuan Ku, Fu-Kai Yang, Tze-Liang Lee, Yung-Cheng Lu, Yi-Ting Fu
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Publication number: 20220157595Abstract: A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a first side face of the first source/drain structure; and a first dielectric structure contacting a second side face of the first source/drain structure. The first side face and the second side face are on opposite sides of the first fin in a cross-sectional view cut along a widthwise direction of the first fin. The first dielectric structure extends higher than the first source/drain structure.Type: ApplicationFiled: January 31, 2022Publication date: May 19, 2022Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
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Patent number: 11335666Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.Type: GrantFiled: July 9, 2020Date of Patent: May 17, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
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Patent number: 11315933Abstract: SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.Type: GrantFiled: April 5, 2019Date of Patent: April 26, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming-Chang Wen, Kuo-Hsiu Hsu, Jyun-Yu Tian, Wan-Yao Wu, Chang-Yun Chang, Hung-Kai Chen, Lien Jung Hung
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Publication number: 20220093743Abstract: Embodiments of the present disclosure provide semiconductor device structures having at least one T-shaped stacked nanosheet transistor to provide increased effective conductive area across the channel regions. In one embodiment, the semiconductor device structure includes a first channel layer formed of a first material, wherein the first channel layer has a first width, and a second channel layer formed of a second material different from the first material, wherein the second channel layer has a second width less than the first width, and the second channel layer is in contact with the first channel layer. The structure also includes a gate dielectric layer conformally disposed on the first channel layer and the second channel layer, and a gate electrode layer disposed on the gate dielectric layer.Type: ApplicationFiled: September 21, 2020Publication date: March 24, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Ching WANG, Wei-Yang LEE, Ming-Chang WEN, Jo-Tzu HUNG, Wen-Hsing HSIEH, Kuan-Lun CHENG
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Publication number: 20220077001Abstract: The present disclosure describes a method of fabricating a semiconductor structure that includes forming a gate structure over a substrate, forming an interlayer dielectric structure surrounding the gate structures, and forming a first opening in the gate structure and the interlayer dielectric structure. The first opening has a first portion in the gate structure and a second portion in the interlayer dielectric structure, in which the first portion has a width larger than the second portion. The method further includes depositing a dielectric layer in the first opening and forming a second opening over the first opening. The first portion of the opening remains open and the second portion of the opening is filled after depositing the dielectric layer. The second opening in the gate structure has a depth larger than the first opening in the gate structure.Type: ApplicationFiled: November 15, 2021Publication date: March 10, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wan-Yao WU, Chang-Yun CHANG, Ming-Chang WEN
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Patent number: 11239072Abstract: A semiconductor structure includes a substrate, a pair of first fins extending from the substrate, a pair of second fins extending from the substrate, an isolation feature over the substrate and separating bottom portions of the first and the second fins, a pair of first epitaxial semiconductor features over the pair of first fins respectively, a pair of second epitaxial semiconductor features over the pair of second fins respectively, and a first dielectric feature sandwiched between and separating the pair of first epitaxial semiconductor features. The pair of second epitaxial semiconductor features merge with each other.Type: GrantFiled: April 21, 2020Date of Patent: February 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ming-Chang Wen, Chang-Yun Chang, Hsien-Chin Lin, Hung-Kai Chen
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Publication number: 20220013407Abstract: A semiconductor structure and method of forming the same are provided. The method includes: forming a plurality of mandrel patterns over a dielectric layer; forming a first spacer and a second spacer on sidewalls of the plurality of mandrel patterns, wherein a first width of the first spacer is larger than a second width of the second spacer; removing the plurality of mandrel patterns; patterning the dielectric layer using the first spacer and the second spacer as a patterning mask; and forming conductive lines laterally aside the dielectric layer.Type: ApplicationFiled: July 9, 2020Publication date: January 13, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Hsin Chan, Jiing-Feng Yang, Kuan-Wei Huang, Meng-Shu Lin, Yu-Yu Chen, Chia-Wei Wu, Chang-Wen Chen, Wei-Hao Lin, Ching-Yu Chang
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Publication number: 20220013494Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.Type: ApplicationFiled: July 9, 2020Publication date: January 13, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
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Patent number: 11177180Abstract: The present disclosure describes a method of fabricating a semiconductor structure that includes forming a gate structure over a substrate, forming an interlayer dielectric structure surrounding the gate structures, and forming a first opening in the gate structure and the interlayer dielectric structure. The first opening has a first portion in the gate structure and a second portion in the interlayer dielectric structure, in which the first portion has a width larger than the second portion. The method further includes depositing a dielectric layer in the first opening and forming a second opening over the first opening. The first portion of the opening remains open and the second portion of the opening is filled after depositing the dielectric layer. The second opening in the gate structure has a depth larger than the first opening in the gate structure.Type: GrantFiled: February 11, 2020Date of Patent: November 16, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wan-Yao Wu, Chang-Yun Chang, Ming-Chang Wen
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Publication number: 20210351126Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.Type: ApplicationFiled: July 22, 2021Publication date: November 11, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
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Publication number: 20210335655Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) in which cavities separate wires of an interconnect structure. For example, a conductive feature overlies a substrate, and an intermetal dielectric (IMD) layer overlies the conductive feature. A first wire and a second wire neighbor in the IMD layer and respectively have a first sidewall and a second sidewall that face each other while being separated from each other by the IMD layer. Further, the first wire overlies and borders the conductive feature. A first cavity and a second cavity further separate the first and second sidewalls from each other. The first cavity separates the first sidewall from the IMD layer, and the second cavity separates the second sidewall from the IMD layer. The cavities reduce parasitic capacitance between the first and second wires and hence resistance-capacitance (RC) delay that degrades IC performance.Type: ApplicationFiled: September 23, 2020Publication date: October 28, 2021Inventors: Hsiu-Wen Hsueh, Jiing-Feng Yang, Chii-Ping Chen, Po-Hsiang Huang, Chang-Wen Chen, Cai-Ling Wu
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Patent number: 11143920Abstract: A display panel including a first substrate, a second substrate, and a display medium layer, a pixel array structure, and a first spacer that are disposed between the first substrate and the second substrate is provided. The pixel array structure includes a first signal line, and has a first platform region located on the first signal line, a first display region and a first support region located between the first platform region and the first display region. A first platform top surface of the first platform region and the first substrate are spaced by a first distance. A support top surface of the first support region and the first substrate are spaced by a second distance. A display top surface of the first display region and the first substrate are spaced by a third distance. A terminal surface of the first spacer contacts the first platform top surface.Type: GrantFiled: November 20, 2019Date of Patent: October 12, 2021Assignee: Au Optronics CorporationInventors: Chi-Ho Chang, An-Cheng Chou, Yu-Chang Wen
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Patent number: 11127708Abstract: Provided are a package structure and a method of manufacturing the same. The method includes the following processes. A die is provided. An encapsulant is formed laterally aside the die. A first dielectric layer is formed on the encapsulant and the die. A first redistribution layer is formed to penetrate through the first dielectric layer to connect to the die, the first redistribution layer includes a first via embedded in the first dielectric layer and a first trace on the first dielectric layer and connected to the first via. The first via and the first trace of the first redistribution layer are formed separately.Type: GrantFiled: November 7, 2019Date of Patent: September 21, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Kai Liu, Han-Ping Pu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
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Patent number: 11121128Abstract: The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a plurality of gate stacks formed on the semiconductor substrate and configured as an alignment mark; doped features formed in the semiconductor substrate and disposed on sides of each of the plurality of gate stacks; and channel regions underlying the plurality of gate stacks and free of channel dopant.Type: GrantFiled: May 22, 2020Date of Patent: September 14, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ming-Chang Wen, Chun-Kuang Chen, Hsien-Cheng Wang
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Patent number: 11107902Abstract: A method includes forming a first and a second dummy gate stack crossing over a semiconductor region, forming an ILD to embed the first and the second dummy gate stacks therein, replacing the first and the second dummy gate stacks with a first and a second replacement gate stack, respectively, performing a first etching process to form a first opening. A portion of the first replacement gate stack and a portion of the second replacement gate stack are removed. The method further includes filling the first opening to form a dielectric isolation region, performing a second etching process to form a second opening, with the ILD being etched, and the dielectric isolation region being exposed to the second opening, forming a contact spacer in the second opening, and filling a contact plug in the second opening. The contact plug is between opposite portions of the contact spacer.Type: GrantFiled: June 25, 2018Date of Patent: August 31, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Gang Chen, Tai-Chun Huang, Yi-Ting Fu, Ming-Chang Wen, Shu-Yuan Ku, Fu-Kai Yang, Tze-Liang Lee, Yung-Cheng Lu
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Publication number: 20210249309Abstract: The present disclosure describes a method of fabricating a semiconductor structure that includes forming a gate structure over a substrate, forming an interlayer dielectric structure surrounding the gate structures, and forming a first opening in the gate structure and the interlayer dielectric structure. The first opening has a first portion in the gate structure and a second portion in the interlayer dielectric structure, in which the first portion has a width larger than the second portion. The method further includes depositing a dielectric layer in the first opening and forming a second opening over the first opening. The first portion of the opening remains open and the second portion of the opening is filled after depositing the dielectric layer. The second opening in the gate structure has a depth larger than the first opening in the gate structure.Type: ApplicationFiled: February 11, 2020Publication date: August 12, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wan-Yao Wu, Chang-Yun Chang, Ming-Chang Wen