Abstract: Information storage devices using magnetic domain wall movement, methods of operating the same, and methods of manufacturing the same are provided. An information storage device includes a first magnetic layer, a heating unit and a magnetic field applying unit. The heating unit heats a first region of the first magnetic layer. The magnetic field applying unit applies a magnetic field to the first region to form a magnetic domain. A wall of the magnetic domain is moved by a current applied to the first magnetic layer.

Abstract: Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other.

Abstract: An exhaust gas denitrifying system having a noise-reduction structure includes a reactor in which a chemical reaction that converts nitrogen oxides included in exhaust gas into nitrogen by denitrifying the nitrogen oxides using a catalyst takes place. The reactor includes a catalytic filter unit coated with a catalyst and provided with a plurality of through-holes through which exhaust gas passes; and a noise-reducing unit for removing noise from the exhaust gas denitrified by the catalytic filter unit. The reactor denitrifies the nitrogen oxides, and simultaneously reduces the noise, thus reducing the size of the exhaust gas denitrifying system.

Abstract: An apparatus and method are provided, which predict total nitrogen using general water quality data measured in real time. The total nitrogen prediction apparatus may include a regression model selection unit to select a regression model comprising general data of at least one water quality based on a correlation coefficient of the general data of at least one water quality, a quality-of-fit evaluation unit to evaluate quality of fit of the selected regression model, a regression model change unit to determine whether to change the regression model based on the quality of fit and change the regression model according to the determination result, and a total nitrogen prediction unit to predict total nitrogen of a body of water based on the regression model.

Abstract: Provided are a method and a system for measuring total phosphorus that may predict total phosphorus of a river valley using multi-parameter water quality that are measured in real time through a multi-parameter water quality measuring unit and the like, and may increase the accuracy thereof. The total phosphorus measuring method according to the present disclosure includes: computing a correlation between the multi-parameter water quality and the total phosphorus using multi-parameter water quality data and total phosphorus data measured for a predetermined period; selecting upper parameters having a high correlation from among the multi-parameter water quality based on the computation result; generating a total phosphorus prediction model through a regression analysis between the upper parameters and the total phosphorus; measuring the multi-parameter water quality; and predicting the total phosphorus by replacing the total phosphorus prediction model with the measured multi-parameter water quality.

Abstract: A metamaterial structure is provided, including a substrate and a plurality of resonators that are provided on different surfaces of the substrate or different layers of the substrate. The resonators have resonance characteristics different from each other, and the metamaterial structure has a permittivity, a permeability, and a refractive index respectively different from those of the substrate in a predetermined frequency bandwidth.

Abstract: A surface plasmon polariton modulator capable of locally varying a physical property of a dielectric material to control a surface plasmon polariton. The surface plasmon polariton modulator includes a dielectric layer, including first and second dielectric portions, which is interposed between two metal layers. The second dielectric portion has a refractive index which varies with an electric field, a magnetic field, heat, a sound wave, or a chemical and/or biological operation applied thereto. The surface plasmon polariton modulator is configured to control one of an advancing direction, an intensity, a phase, or the like of a surface plasmon using an electric signal. The surface plasmon polariton modulator can operate as a surface plasmon polariton multiplexer or a surface plasmon polariton demultiplexer.

Abstract: A display apparatus and a method for moving an object thereof are provided. The display apparatus includes a display which displays an object; a proximate sensor which senses a proximate input to the display; a touch sensor which senses a touch input to the display; a coordinates calculator which calculates coordinates corresponding to one of the proximate input sensed by the proximate sensor and the touch input sensed by the touch sensor; and a controller which controls the display to move the object to the calculated coordinates.

Abstract: A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.

Abstract: A display apparatus, display method, image processing apparatus, and image processing method which are capable of allowing a stereoscopic image to be recognized exactly by a left eye and a right eye. The display apparatus includes: an image signal receiving unit which receives an image signal; an image signal processing unit which generates a scanning signal for scanning a left eye image signal and a right eye image signal of the image signal alternately and for scanning a part of the left eye image signal or a part of the right eye image signal between a section for scanning the left eye image signal and a section for scanning the right eye image signal; and an image output unit which displays the image signal according to the scanning signal.

Abstract: A vertical non-volatile memory device includes a semiconductor pattern disposed on a substrate; and a plurality of transistors of first through n-th layers that are stacked on a side of the semiconductor pattern at predetermined distances from each other, wherein the transistors are spaced apart and insulated from one another at the predetermined distances via air gap, where n is a natural number equal to or greater than 2.

Abstract: A device and a method for a controlling compressor of vehicles improves acceleration performance and fuel efficiency and maintains comfort of a cabin by decreasing an operation of the compressor when accelerating.

Abstract: A method for controlling a compressor of vehicles improves fuel efficiency by accumulating a cold air energy when a speed-reducing condition occurs and using the accumulated cold air energy when a release condition occurs.

Abstract: Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a recess surrounded by the polysilicon conformal layer, wherein the polysilicon conformal layer is formed to extend upwardly from a surface of the substrate to have a protrusion and the protrusion has a vertical outer sidewall adjacent the surface of the substrate, forming a tungsten layer in the recess to form an upper surface that includes an interface between the polysilicon conformal layer and the tungsten layer, and forming a capping layer being in direct contact with top surfaces of the polysilicon conformal layer and the tungsten layer without any intervening layers.

Abstract: A nano-pH sensor can include a nanoparticle having an outer surface functionalized by a carboxy functional group. The nanoparticle is reversibly aggregated as a function of pH and is generally non-toxic. A fluorometer can be oriented to expose the nanoparticles to a light source at a given wavelength. Further, the fluorometer can be configured to detect changes in fluorescence of the gold nanoparticle with changes in pH.

Abstract: A method of forming a gate electrode of a semiconductor device is provided, the method including: forming a plurality of stacked structures each comprising a tunnel dielectric layer, a first silicon layer for floating gates, an intergate dielectric layer, a second silicon layer for control gates, and a mask pattern, on a semiconductor substrate in the stated order; forming a first interlayer dielectric layer between the plurality of stacked structures so that a top surface of the mask pattern is exposed; selectively removing the mask pattern of which the top surface is exposed; forming a third silicon layer in an area from which the hard disk layer was removed, and forming a silicon layer comprising the third silicon layer and the second silicon layer; recessing the first interlayer dielectric layer so that an upper portion of the silicon layer protrudes over the he first interlayer dielectric layer; and forming a metal silicide layer on the upper portion of the silicon layer.

Abstract: Provided is a cross-point latch and a method of operating the cross-point latch. The cross-point latch includes a signal line, two control lines crossing the signal line, and unipolar switches disposed at crossing points between the signal line and the control lines.

Abstract: A method of manufacturing a non-volatile memory device including a tunnel oxide layer, a preliminary charge storing layer and a dielectric layer on a semiconductor layer is disclosed. A first polysilicon layer is formed on the dielectric layer. A barrier layer and a second polysilicon layer are formed on the first polysilicon layer. The second polysilicon layer, the barrier layer, the first polysilicon layer, the dielectric layer, the preliminary charge storing layer and the tunnel oxide layer are patterned to form a tunnel layer pattern, a charge storing layer pattern, a dielectric layer pattern, a first control gate pattern, a barrier layer pattern and a second polysilicon pattern. A nickel layer is formed on the second polysilicon layer. Heat treatment is performed with respect to the second polysilicon pattern and the nickel layer to form a second control gate pattern including NiSi on the barrier layer pattern.

Abstract: A method of fabricating a semiconductor device includes: forming a first polysilicon layer having a first thickness in a peripheral circuit region formed on a substrate; forming a stack structure comprising a first tunneling insulating layer, a charge trap layer, and a blocking insulating layer in a memory cell region formed on the substrate; forming a second polysilicon layer having a second thickness that is less than the first thickness on the blocking insulating layer; and forming gate electrodes by siliciding the first and second polysilicon layers.

Abstract: The present invention relates to the heat-radiation structure of a pin-type power Light Emitting Diode (LED). The heat-radiation structure includes an LED device, first and second lead frames, a mold unit, and a heat sink. The first lead frame is electrically connected to the LED device, and extended forward to the outside in order to supply power to the LED device. The second lead frame is provided to face the first lead frame, and extended forward to the outside. The mold unit includes the LED device, and molds the upper portions of the first and second lead frames out transparent material. The heat sink is provided at a bottom of the mold unit so that the lead frames penetrate therethrough, fixed into any of the two lead frames, and configured to receive heat from the lead frame which comes into contact therewith and to radiate the heat to the outside.