Patents by Inventor Chang-Wook Jeong

Chang-Wook Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7105870
    Abstract: Phase-changeable memory devices include non-volatile memory cells. Each of these non-volatile memory cells may include a phase-changeable diode on a semiconductor substrate and a phase-changeable memory element having a first terminal electrically coupled to a terminal of the phase-changeable diode. This phase-changeable diode may include a lower electrode pattern on the semiconductor substrate, a first phase-changeable pattern on the lower electrode pattern and a gate switching layer pattern on the first phase-changeable pattern. The phase-changeable memory element includes a second phase-changeable pattern electrically coupled to the terminal of the phase-changeable diode and a memory switching layer pattern on the second phase-changeable pattern. The memory switching layer pattern may include a composite of a titanium layer pattern contacting the phase-changeable memory element and a titanium nitride layer pattern contacting the titanium layer pattern.
    Type: Grant
    Filed: June 3, 2005
    Date of Patent: September 12, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su-Youn Lee, Su-Jin Ahn, Chang-Wook Jeong
  • Patent number: 7092283
    Abstract: A magnetic random access memory device may include a first electrode on a substrate, a magnetic tunneling junction element electrically connected to the electrode, and a second electrode electrically connected to the first electrode through the magnetic tunneling junction element. In addition, a heat generating layer may be electrically connected in series between the first and second electrodes, and the heat generating layer may provide a relatively high resistance with respect to electrical current flow. Related methods are also discussed.
    Type: Grant
    Filed: March 8, 2004
    Date of Patent: August 15, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-Cheol Jeong, Chang-Wook Jeong, Hyeong-Jun Kim, Jae-Hyun Park
  • Publication number: 20050285094
    Abstract: Phase-changeable memory devices include non-volatile memory cells. Each of these non-volatile memory cells may include a phase-changeable diode on a semiconductor substrate and a phase-changeable memory element having a first terminal electrically coupled to a terminal of the phase-changeable diode. This phase-changeable diode may include a lower electrode pattern on the semiconductor substrate, a first phase-changeable pattern on the lower electrode pattern and a gate switching layer pattern on the first phase-changeable pattern. The phase-changeable memory element includes a second phase-changeable pattern electrically coupled to the terminal of the phase-changeable diode and a memory switching layer pattern on the second phase-changeable pattern. The memory switching layer pattern may include a composite of a titanium layer pattern contacting the phase-changeable memory element and a titanium nitride layer pattern contacting the titanium layer pattern.
    Type: Application
    Filed: June 3, 2005
    Publication date: December 29, 2005
    Inventors: Su-Youn Lee, Su-Jin Ahn, Chang-Wook Jeong
  • Publication number: 20050263823
    Abstract: A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
    Type: Application
    Filed: December 30, 2004
    Publication date: December 1, 2005
    Inventors: Young-Nam Hwang, Gwan-Hyeob Koh, Su-Jin Ahn, Sung-Lae Cho, Se-Ho Lee, Kyung-Chang Ryoo, Chang-Wook Jeong, Su-Youn Lee, Bong-Jin Kuh
  • Publication number: 20050263829
    Abstract: In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
    Type: Application
    Filed: May 27, 2005
    Publication date: December 1, 2005
    Inventors: Yoon-Jong Song, Young-Nam Hwang, Sang-Don Nam, Sung-Lae Cho, Gwan-Hyeob Koh, Choong-Man Lee, Bong-Jin Kuh, Yong-Ho Ha, Su-Youn Lee, Chang-Wook Jeong, Ji-Hye Yi, Kyung-Chang Ryoo, Se-Ho Lee, Su-Jin Ahn, Soon-Oh Park, Jang-Eun Lee
  • Publication number: 20050205952
    Abstract: Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.
    Type: Application
    Filed: March 11, 2005
    Publication date: September 22, 2005
    Inventors: Jae-Hyun Park, Hyeong-Jun Kim, Won-Cheol Jeong, Chang-Wook Jeong, Hong-sik Jeong, Gi-Tae Jeong
  • Publication number: 20050139816
    Abstract: Phase change Random Access Memory (PRAM) devices include a substrate and a phase change layer pattern on the substrate. The phase change layer pattern includes a sharp tip and at least one wall that extends from the sharp tip in a direction away from the substrate. At least one contact hole node is provided that contacts the phase change material pattern adjacent the sharp tip.
    Type: Application
    Filed: December 21, 2004
    Publication date: June 30, 2005
    Inventors: Won-Cheol Jeong, Hyeong-Jun Kim, Jae-Hyun Park, Chang-Wook Jeong
  • Publication number: 20050110983
    Abstract: Phase change memory devices and methods of making phase changeable memory devices including a heating electrode disposed on a substrate are provided. The heating electrode includes an electrode hole in the heating electrode. A phase change material pattern is provided in the electrode hole and contacts a sidewall of the electrode hole. In some embodiments, the electrode hole extends through the heating electrode.
    Type: Application
    Filed: September 16, 2004
    Publication date: May 26, 2005
    Inventors: Won-Cheol Jeong, Hyeong-Jun Kim, Jae-Hyun Park, Chang-Wook Jeong
  • Publication number: 20050078510
    Abstract: A magnetic random access memory device may include a first electrode on a substrate, a magnetic tunneling junction element electrically connected to the electrode, and a second electrode electrically connected to the first electrode through the magnetic tunneling junction element. In addition, a heat generating layer may be electrically connected in series between the first and second electrodes, and the heat generating layer may provide a relatively high resistance with respect to electrical current flow. Related methods are also discussed.
    Type: Application
    Filed: March 8, 2004
    Publication date: April 14, 2005
    Inventors: Won-Cheol Jeong, Chang-Wook Jeong, Hyeong-Jun Kim, Jae-Hyun Park
  • Publication number: 20030219361
    Abstract: An apparatus and method for wet pre-treatment of an effluent gas derived from upstream semiconductor or LCD manufacturing tools before the effluent gas is processed in an effluent gas treatment system in provided. The apparatus comprises an atomizing spray nozzle for atomizing a reagent and a processing section in which the effluent gas in pre-treated with the atomized reagent using a cyclone method. The processing section comprises an inner tubular portion and an outer tubular portion. The processing section has an effluent gas inlet, a reagent inlet, an effluent gas outlet, and a waste liquid outlet. An apparatus is also provided which includes a plurality of wet pre-treatment units, each of which pre-treat each of effluent gas streams derived from a plurality of CVD chambers.
    Type: Application
    Filed: February 13, 2003
    Publication date: November 27, 2003
    Applicant: UNISEM Co., Ltd.
    Inventors: Byung Il Lee, Byung Kwon Yim, Yun Hag Oh, Sung Jin Jung, Man Su Lee, Chang Wook Jeong, Tae Sang Yoon, Geun Sik Lee
  • Patent number: 6635571
    Abstract: Disclosed is a process for depositing an aluminum oxide thin film necessary for semiconductor devices. The process includes the steps of: subjecting a gaseous organoaluminum compound as an aluminum source in contact with a target substrate and depositing aluminum using plasma. The steps are sequentially repeated to form an aluminum thin film, and further includes the step of oxidizing the aluminum thin film using oxygen plasma. This deposition cycle is repeated to obtain an aluminum oxide thin film. The present invention uses an aluminum source containing less contaminant compared to the prior art, thus obtaining aluminum oxide of high quality. Furthermore, the temperature of the gas supply and the reactor can be lowered in relation to the prior art method to reduce costs in the fabrication of semiconductor devices.
    Type: Grant
    Filed: April 25, 2001
    Date of Patent: October 21, 2003
    Inventors: Seung Ki Joo, Jang Sik Lee, Chang Wook Jeong
  • Publication number: 20020081394
    Abstract: Disclosed is a process for depositing an aluminum oxide thin film necessary for semiconductor devices. The process includes the steps of: subjecting a gaseous organoaluminum compound as an aluminum source in contact with a target substrate and depositing aluminum using plasma, which steps are sequentially repeated to form an aluminum thin film, and further the step of oxidizing the aluminum thin film using oxygen plasma. This deposition cycle is repeated to obtain an aluminum oxide thin film.
    Type: Application
    Filed: April 25, 2001
    Publication date: June 27, 2002
    Inventors: Seung Ki Joo, Jang Sik Lee, Chang Wook Jeong