Patents by Inventor CHAO AN

CHAO AN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8946828
    Abstract: A semiconductor device includes a semiconductor substrate; a gate stack overlying the substrate, a spacer formed on sidewalls of the gate stack, and a protection layer overlying the gate stack for filling at least a portion of a space surrounded by the spacer and the top surface of the gate stack. A top surface of the spacer is higher than a top surface of the gate stack.
    Type: Grant
    Filed: February 9, 2010
    Date of Patent: February 3, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sey-Ping Sun, Tsung-Lin Lee, Chin-Hsiang Lin, Chih-Hao Chang, Chen-Nan Yeh, Chao-An Jong
  • Publication number: 20150028954
    Abstract: A signal receiver includes a current source providing a current having a current value, a pair of active input devices, and a pair of resistors. Each active input device includes a control node, a first conduction node, and a second conduction node. One of the control nodes receives an input signal. The first conduction nodes are connected to each other and receive the current. One of the second conduction nodes serves as an output node. The active input devices output an output signal to a core circuit according to the current and the input signal. Each resistor has a resistance value. A target voltage value is determined according to the resistance value and the current value, such that a voltage swing of the output signal is limited within the target voltage value, and an operating voltage of the core circuit is substantially equal to the target voltage value.
    Type: Application
    Filed: July 24, 2014
    Publication date: January 29, 2015
    Inventors: Eer-Wen Tyan, Yu-Chieh Hung, Jian-Feng Shiu, Chao-An Chen
  • Publication number: 20140349808
    Abstract: In a hybrid transportation apparatus, a gas supply provides high-pressure hydrogen, which drives a turbine to generate first mechanical power and becomes medium-pressure hydrogen, which drives an air engine to generate second mechanical power and becomes low-pressure hydrogen. A fuel cell generates first electric power according to the low-pressure hydrogen. A heat recycling module recycles heat, which is generated by the fuel cell, to warm up the high-pressure hydrogen or the medium-pressure hydrogen. A generator receives the first mechanical power and generates second electric power. A motor generates third mechanical power according to the first and second electric power. A power output device causes movement of the transportation apparatus according to the second and third mechanical power. Thus, potential energy and chemical energy of the high-pressure hydrogen can be effectively utilized to generate the mechanical power and the electric power to move the transportation apparatus.
    Type: Application
    Filed: August 8, 2013
    Publication date: November 27, 2014
    Applicant: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chih-Yung HUANG, Cheng-Kuo SUNG, Chin-Min LIU, Chao-An LIN
  • Patent number: 8865500
    Abstract: A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: October 21, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Chien-Hsin Huang, Bang-Chiang Lan, Hui-Min Wu, Tzung-I Su, Chao-An Su, Tzung-Han Tan
  • Publication number: 20140196600
    Abstract: An air engine includes a cylinder, a piston, a gas supply and an intake-exhaust mechanism. The gas supply supplies a compressed gas to move the piston reciprocating in the cylinder. The intake-exhaust mechanism connected to the cylinder and the gas supply includes a body and an intake-exhaust assembly. The body has a chamber, and an intake channel, an exhaust channel, an inlet port and an outlet port, which communicate with the chamber. The intake-exhaust assembly, rotatable within the chamber, controls the inlet port to be connected to the intake channel, and further controls the outlet port to be connected to the exhaust channel, so that the compressed gas enters the cylinder via the inlet port and the intake channel to drive the piston. After driving the piston, the compressed gas becomes an exhaust gas, which is exhausted from the cylinder via the exhaust channel and the outlet port.
    Type: Application
    Filed: March 14, 2013
    Publication date: July 17, 2014
    Applicant: NATIONAL TSING HUA UNIVERSITY
    Inventors: CHIH-YUNG HUANG, JHIH-JIE YOU, CHENG-KUO SUNG, CHAO-AN LIN
  • Patent number: 8710601
    Abstract: A micro electro mechanical system (MEMS) structure is disclosed. The MEMS structure includes a backplate electrode and a 3D diaphragm electrode. The 3D diaphragm electrode has a composite structure so that a dielectric is disposed between two metal layers. The 3D diaphragm electrode is adjacent to the backplate electrode to form a variable capacitor together.
    Type: Grant
    Filed: November 19, 2009
    Date of Patent: April 29, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Chien-Hsin Huang, Bang-Chiang Lan, Ming-I Wang, Hui-Min Wu, Tzung-I Su, Chao-An Su, Tzung-Han Tan, Min Chen, Meng-Jia Lin
  • Publication number: 20140073128
    Abstract: A method for manufacturing metal lines in a semiconductor device is provided. The method includes steps of: providing a substrate; forming a first barrier layer on the substrate; forming a sacrificial layer on the first barrier layer; forming an opening penetrating through the sacrificial layer to expose a portion of the first barrier layer; depositing a metal material on the exposed first barrier layer to form a metal line in the opening; removing the sacrificial layer and forming a second barrier layer over the resulting structure; etching the second barrier layer and the first barrier layer while remaining a barrier spacer on a sidewall of the metal line; and forming an insulating layer on the substrate and the barrier spacer. A semiconductor device having the metal lines produced by the method is also provided.
    Type: Application
    Filed: November 14, 2013
    Publication date: March 13, 2014
    Applicant: National Applied Research Laboratories
    Inventor: Chao-An JONG
  • Publication number: 20140035554
    Abstract: A driving circuit includes a first driving module, configured to operate at a first operating voltage in a first mode and configured to be deactivated in a second mode; and a second driving module, wherein at least part of the second driving module operates at a protection voltage in the first mode and operates at a second operating voltage in the second mode, wherein the second operating voltage and the protection voltage are lower than the first operating voltage.
    Type: Application
    Filed: July 3, 2013
    Publication date: February 6, 2014
    Inventors: Hsian-Feng Liu, Eer-Wen Tyan, Chao-An Chen
  • Patent number: 8642986
    Abstract: An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the logic circuit region of the substrate. The metal interconnect, formed by a plurality of levels of wires and a plurality of vias, is located above the substrate to connect the MOS device. The MEMS device is located on the MEMS region, and includes a sandwich membrane located between any two neighboring levels of wires in the metal interconnect and connected to the metal interconnect.
    Type: Grant
    Filed: September 23, 2009
    Date of Patent: February 4, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Tzung-Han Tan, Bang-Chiang Lan, Ming-I Wang, Tzung-I Su, Chien-Hsin Huang, Hui-Min Wu, Chao-An Su, Min Chen, Meng-Jia Lin
  • Patent number: 8627949
    Abstract: A transmission mechanism includes a feeder, a belt furling module, a tension maintaining module, and a carrier belt. The tension maintaining module and the belt furling module are positioned on the feeder, and the carrier belt runs along the feeder, the tension maintaining module, and the belt furling module in that order. The tension maintaining module includes a base, a pivot shaft slidably positioned on the base, and an elastic member sleeved on the pivot shaft. When the carrier belt relaxes, the elastic member releases its compression force to drive the pivot shaft to move away relative to the base, thereby maintaining the tension force of the carrier belt. The disclosure also provides a surface mount device using the transmission mechanism, which reduces the likelihood of the carrier belt breaking or jamming, thereby promoting improved precision and yield rate of the surface mounted equipment.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: January 14, 2014
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Tsung-Chih Tsai, Chao-An Kang, Shang-Yu Lin
  • Publication number: 20140008799
    Abstract: A metal line fabricating method includes the following steps. Firstly, a substrate is provided. Then, a first barrier layer is formed over the substrate. A first dielectric layer is formed over the first barrier layer. An opening is formed in the first dielectric layer, wherein the opening runs through the first dielectric layer, so that the first barrier layer is exposed to the opening. A metal deposition process is performed to form a metal line over the exposed first barrier layer at a bottom of the opening. The first dielectric layer and the first barrier layer underlying the first dielectric layer are removed, but the metal line and the first barrier layer underlying the metal line are remained. Afterwards, a second dielectric layer is formed over the substrate which is provided with the metal line and the first barrier layer.
    Type: Application
    Filed: July 4, 2012
    Publication date: January 9, 2014
    Inventors: Chao-An Jong, Fu-Liang Yang
  • Publication number: 20130284380
    Abstract: A feeder capable of transferring and separating an adhesive component on a tap, includes a frame, a separator, and a drive device. The frame has a top portion for supporting the tap. The separator is mounted to the frame to separate the adhesive component from the tap when the tap passes through the separator. The drive device drives the tap to pass through the separator.
    Type: Application
    Filed: October 26, 2012
    Publication date: October 31, 2013
    Inventors: TSUNG-CHIH TSAI, SHANG-YU LIN, CHAO-AN KANG
  • Publication number: 20130276992
    Abstract: A feeder capable of transferring and separating an adhesive component from a tap, includes a frame, a driven capstan device, a separating device, and a drive device. The driven capstan device is mounted to the frame. The separating device is mounted to the frame to separate the adhesive component from the tap. The drive device drives the tap to unwind from the driven capstan and transfer to the separating device to enable the separating device to separate the adhesive component.
    Type: Application
    Filed: October 29, 2012
    Publication date: October 24, 2013
    Inventors: Tsung-Chih TSAI, Chao-An KANG, Shang-Yu LIN
  • Patent number: 8565299
    Abstract: A method for processing an audio/video bit-stream includes the steps of receiving an input bit-stream, detecting whether the input bit-stream has a startcode emulation prevention pattern, and removing the startcode emulation prevention pattern from the input bit-stream to generate an output bit-stream and setting a flag signal as a first designated flag value when the startcode emulation prevention pattern is detected. The method further includes the step of detecting whether the input bit-stream includes a startcode, and directly outputting the input bit-stream and setting the flag signal as a second designated flag value when the startcode is detected.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: October 22, 2013
    Assignee: Realtek Semiconductor Corp.
    Inventors: Yi-Chen Tseng, Cheng-Ying Yu, Chao-An Hsieh
  • Patent number: 8558336
    Abstract: A semiconductor photodetector structure is provided. The structure includes a substrate, a photodetecting element and a semiconductor layer disposed on the photodetecting element. The substrate includes a first semiconductor material and includes a deep trench. The surface of the deep trench includes a first type dopant. The photodetecting element is disposed in the deep trench. The photodetecting element includes a second semiconductor material. The semiconductor layer includes a second type dopant.
    Type: Grant
    Filed: August 17, 2009
    Date of Patent: October 15, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Tzung-I Su, Bang-Chiang Lan, Chao-An Su, Hui-Min Wu, Ming-I Wang, Chien-Hsin Huang, Tzung-Han Tan, Min Chen, Meng-Jia Lin, Wen-Yu Su
  • Patent number: 8522692
    Abstract: The present invention relates to the technical field of railroad passenger car, and more particularly relates to a sleeper compartment of a railroad passenger car. The sleeper compartment may be an open type or a private booth type, comprising: sidewalls, partition walls, and two columns of longitudinally arranged sleepers that are parallel with each other; each column of the longitudinally arranged sleepers is formed by no less than two sleepers that are joined together, the sleepers comprise an upper-sleeper layer and a lower-sleeper layer; one partition wall is provided between adjacent sleepers; the length direction of the longitudinally arranged sleepers is consistent with the length direction of the railroad passenger car; the longitudinally arranged sleepers at two sides are fixed to the sidewalls respectively, and a corridor is provided between two adjacent columns of longitudinally arranged sleepers.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: September 3, 2013
    Assignee: Tangshan Railway Vehicle Co., Ltd.
    Inventors: Bangcheng Sun, Chao An, Shunyin Cai, Huijun Liu
  • Patent number: 8507996
    Abstract: An integrated circuit structure includes a semiconductor substrate; a gate stack overlying the semiconductor substrate; a gate spacer on a sidewall of the gate stack; a first contact plug having an inner edge contacting a sidewall of the gate spacer, and a top surface level with a top surface of the gate stack; and a second contact plug over and contacting the first contact plug. The second contact plug has a cross-sectional area smaller than a cross-sectional area of the first contact plug.
    Type: Grant
    Filed: May 27, 2010
    Date of Patent: August 13, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sey-Ping Sun, Chih-Hao Chang, Chao-An Jong, Tsung-Lin Lee, Chung-Ju Lee, Chin-Hsiang Lin
  • Patent number: 8502382
    Abstract: A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: August 6, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Bang-Chiang Lan, Ming-I Wang, Hui-Min Wu, Min Chen, Chien-Hsin Huang, Tzung-I Su, Chao-An Su, Tzung-Han Tan, Li-Che Chen, Meng-Jia Lin
  • Patent number: 8430439
    Abstract: An exemplary surface mount machine nozzle includes a mounting element, a pneumatic suction nozzle and a fixing pin. The mounting element defines one of a pivot hole and an elongated perforation in a sidewall thereof. The pneumatic suction nozzle defines another one of the pivot hole and the elongated perforation therein. The fixing pin horizontally extends through the pivot hole and the perforation for connecting the mounting element and the pneumatic suction nozzle together. The fixing pin is slidable along the elongated perforation such that the pneumatic suction nozzle is telescopically slidable relative to the mounting element.
    Type: Grant
    Filed: October 20, 2011
    Date of Patent: April 30, 2013
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Tsung-Chih Tsai, Shang-Yu Lin, Chao-An Kang
  • Patent number: 8410607
    Abstract: A semiconductor structure includes a transistor over a substrate, the transistor comprising a gate and a contact region, which is adjacent to the gate and within the substrate. A first dielectric layer is over the contact region. A contact structure is within the first dielectric layer and over the contact region. A first electrode and a second electrode are within the first dielectric layer, wherein at least one of the first electrode and the second electrode is over the contact structure. The first electrode and second electrodes may be laterally or vertically separated. A phase change structure is disposed between the first electrode and the second electrode. The phase change structure includes at least one spacer within the first dielectric layer and a phase change material (PCM) layer over the spacer.
    Type: Grant
    Filed: June 15, 2007
    Date of Patent: April 2, 2013
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shau-Lin Shue, Chao-An Jong