Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a dielectric layer, a pad structure and a protection structure. The dielectric layer is disposed on the substrate. The pad structure is disposed in the dielectric layer. The pad structure includes a plurality of first metal layers and a plurality of plugs which are electrically connected to each other vertically. There is no contact plug disposed between the pad structure and the substrate. The protection structure is disposed in the dielectric layer and encompasses the pad structure.

Abstract: A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.

Abstract: A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.

Abstract: A transmission mechanism includes a feeder, a belt furling module, a tension maintaining module, and a carrier belt. The tension maintaining module and the belt furling module are positioned on the feeder, and the carrier belt runs along the feeder, the tension maintaining module, and the belt furling module in that order. The tension maintaining module includes a base, a pivot shaft slidably positioned on the base, and an elastic member sleeved on the pivot shaft. When the carrier belt relaxes, the elastic member releases its compression force to drive the pivot shaft to move away relative to the base, thereby maintaining the tension force of the carrier belt. The disclosure also provides a surface mount device using the transmission mechanism, which reduces the likelihood of the carrier belt breaking or jamming, thereby promoting improved precision and yield rate of the surface mounted equipment.

Abstract: A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

Abstract: A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.

Abstract: A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.

Abstract: A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

Abstract: An exemplary surface mounting apparatus includes a winder, a waste tape and a feeder for discharging the waste tape towards the winder. The winder includes a pivot, a wheel rotatably mounted around the pivot, and a coil spring disposed between the pivot and the wheel. An outer end of the coil spring is connected to the wheel to rotate with the wheel, and an inner end of the coil spring is static relative to the pivot during rotation of the wheel. The waste tape is connected to the wheel of the winder.

Abstract: An exemplary surface mount machine nozzle includes a mounting element, a pneumatic suction nozzle and a fixing pin. The mounting element defines one of a pivot hole and an elongated perforation in a sidewall thereof. The pneumatic suction nozzle defines another one of the pivot hole and the elongated perforation therein. The fixing pin horizontally extends through the pivot hole and the perforation for connecting the mounting element and the pneumatic suction nozzle together. The fixing pin is slidable along the elongated perforation such that the pneumatic suction nozzle is telescopically slidable relative to the mounting element.

Abstract: The present invention is related to a folder-type mobile communication device. The device comprises a first dielectric substrate, a first ground plane disposed on the first dielectric substrate, a second dielectric substrate, a second ground plane disposed on the second dielectric substrate, an antenna element, a metal line, and a band-stop circuit. The antenna element is located near the first ground plane and is electrically connected to a source on the first dielectric substrate. The second ground plane is electrically connected to the first ground plane through the metal line. The band-stop circuit is located either on the first ground plane or on the second ground plane. The band-stop circuit includes a slit, a capacitive element, and an inductive element. The slit is near the metal line.

Abstract: An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

Abstract: The present invention relates to the technical field of railroad passenger car, and more particularly relates to a sleeper compartment of a railroad passenger car. The sleeper compartment may be an open type or a private booth type, comprising: sidewalls, partition walls, and two columns of longitudinally arranged sleepers that are parallel with each other; each column of the longitudinally arranged sleepers is formed by no less than two sleepers that are joined together, the sleepers comprise an upper-sleeper layer and a lower-sleeper layer; one partition wall is provided between adjacent sleepers; the length direction of the longitudinally arranged sleepers is consistent with the length direction of the railroad passenger car; the longitudinally arranged sleepers at two sides are fixed to the sidewalls respectively, and a corridor is provided between two adjacent columns of longitudinally arranged sleepers.

Abstract: A semiconductor device includes a semiconductor substrate; a gate stack overlying the substrate, a spacer formed on sidewalls of the gate stack, and a protection layer overlying the gate stack for filling at least a portion of a space surrounded by the spacer and the top surface of the gate stack. A top surface of the spacer is higher than a top surface of the gate stack.

Abstract: A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed.

Abstract: The present invention is related to a folder-type mobile communication device. The device comprises a first dielectric substrate, a first ground plane disposed on the first dielectric substrate, a second dielectric substrate, a second ground plane disposed on the second dielectric substrate, an antenna element, a metal line, and a band-stop circuit. The antenna element is located near the first ground plane and is electrically connected to a source on the first dielectric substrate. The second ground plane is electrically connected to the first ground plane through the metal line. The band-stop circuit is located either on the first ground plane or on the second ground plane. The band-stop circuit includes a slit, a capacitive element, and an inductive element. The slit is near the metal line.

Abstract: An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

Abstract: A method of forming the structure of the semiconductor device having a waveguide. Firstly, a SOI substrate including a bulk silicon, an insulating layer, and a silicon layer is provided and a device region and a waveguide region are defined on the SOI substrate. Afterwards, a protection layer and a patterned shielding layer are formed to cover the waveguide region and expose the device region. Subsequently, a recess is formed by etching the protection layer, the silicon layer and the insulating layer and thereby the bulk silicon is exposed. After that, an epitaxial silicon layer is formed in the recess and a semiconductor device is subsequently formed on the epitaxial silicon layer. Also, the present invention conquers the poor electrical performance of the semiconductor device integrated into the SOI substrate.

Abstract: A micro electro mechanical system (MEMS) structure is disclosed. The MEMS structure includes a backplate electrode and a 3D diaphragm electrode. The 3D diaphragm electrode has a composite structure so that a dielectric is disposed between two metal layers. The 3D diaphragm electrode is adjacent to the backplate electrode to form a variable capacitor together.

Abstract: A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.