Abstract: An electronic device including a signal processing circuit, an acceleration sensor, and an edge sensor is provided. The electronic device has a device body. The signal processing circuit operates in a sleep mode. The acceleration sensor senses an acceleration variation of the device body to generate an acceleration sensing signal. The acceleration sensor determines whether the acceleration sensing signal is continuously lower than an acceleration threshold for a preset length of time to wake up the signal processing circuit. When the acceleration sensor wakes up the signal processing circuit, the signal processor enables the edge sensor. The edge sensor senses a deformation variation of the device body to generate at least one deformation sensing signal. The signal processing circuit analyzes the deformation sensing signal to determine whether a drop event of the device body occurs. In addition, a drop warning method is also provided.

Abstract: A semiconductor device includes a substrate, a first insulating structure and a gate structure. The substrate includes at least two fin structures protruding from a top surface of the substrate, the substrate includes a first recess and a second recess under the first recess, and the first recess and the second recess are disposed between the fin structures, in which a width of the first recess is larger than a width of the second recess, and the first recess and the second recess form a step structure. The first insulating structure fills the second recess. The gate structure is disposed on the first insulating structure, in which the first recess and the second recess are filled up with the gate structure and the first insulating structure.

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.

Abstract: A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, wherein each of the first fin-shaped structure and the second fin-shaped structure comprises a top portion and a bottom portion; a first doped layer around the bottom portion of the first fin-shaped structure; a second doped layer around the bottom portion of the second fin-shaped structure; a first liner on the first doped layer; and a second liner on the second doped layer.

Abstract: Disclosed herein are systems, methods, and devices for implementing a heads-up display (HUD) that is viewable in conditions where a viewer is wearing a p-polarized eyewear, eyewear polarized between s-polarized and p-polarized, or not. Thus, employing the aspects disclosed herein, a viewer may realize all the benefits of a HUD implementation (for example, one implemented via a vehicle), while realizing all the benefits of wearing polarized eyewear.

Abstract: A method for fabricating a semiconductor device having a gate structure includes forming a substrate including at least two fin structures protruding from a top surface of the substrate, the substrate including a first recess and a second recess disposed under the first recess, and the first recess and the second recess being disposed between the fin structures, wherein a width of the first recess is larger than a width of the second recess, and the first recess and the second recess form a step structure; forming an insulating structure in the second recess; and forming the gate structure on the insulating structure, wherein the first recess and the second recess are filled up with the gate structure and the insulating structure.

Abstract: Various examples provide a mold including a molding component and a supplementary component. The molding component may have a cavity, to enable a molten material to fill into the molding component to form an object. The supplementary component may include a bypass having a first opening located at a first position of the molding component and a second opening located at a second position of the molding component. The molten material may flow from the first position to the second position via the molding component, flow from the first opening to the second opening via the bypass and fill into the second position of the molding component through the second opening.

Abstract: A semiconductor device includes: a fin-shaped structure on a substrate, in which the fin-shaped structure includes a top portion and a bottom portion; a doped layer around the bottom portion of the fin-shaped structure; a first liner on the doped layer, and a second liner on the top portion and the bottom portion of the fin-shaped structure. Preferably, the first liner and the second liner are made of different material.

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first fin-shaped structure thereon; forming a spacer adjacent to the first fin-shaped structure; using the spacer as mask to remove part of the substrate for forming a second fin-shaped structure, wherein the second fin-shaped structure comprises a top portion and a bottom portion; and forming a doped portion in the bottom portion of the second fin-shaped structure.

Abstract: A semiconductor device and method of forming the same, the semiconductor device includes a first and second fin shaped structures, a first and second gate structures and a first and second plugs. The first and second fin shaped structures are disposed on a first region and a second region of a substrate and the first and second gate structure are disposed across the first and second fin shaped structures, respectively. A dielectric layer is disposed on the substrate, covering the first and second gate structure. The first and second plugs are disposed in the dielectric layer, wherein the first plug is electrically connected first source/drain regions adjacent to the first gate structure and contacts sidewalls of the first gate structure, and the second plug is electrically connected to second source/drain regions adjacent to the second gate structure and not contacting sidewalls of the second gate structure.

Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the semiconductor material, and the pixel array is disposed between the semiconductor material and the first transparent shield. The image sensor package further includes a second transparent shield, where the first transparent shield is disposed between the pixel array and the second transparent shield. A light blocking layer is disposed between the first transparent shield and the second transparent shield, and the light blocking layer is disposed to prevent light from reflecting off edges of the first transparent shield into the pixel array.

Abstract: The present invention provides a method of forming a semiconductor structure. A wafer with a dicing region is provided, the dicing region comprises a central region, a middle region surrounds the central region, and a peripheral region surrounds the middle region. Next, an aligning mark is formed in the dicing region, wherein the aligning mark is a mirror symmetrical pattern and comprises a plurality of second patterns in the middle region and a plurality of third patterns in the third region, each third pattern has a plurality of lines and the lines comprises a plurality of inner lines which are formed by a sidewall image transfer (SIT) process.

Abstract: A semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure includes a top portion which protrudes from a bottom surface of the fin shaped structure and the fin shaped structure is directly disposed on the silicon substrate. The bottom surface of the fin shaped structure covers an entire top surface of the silicon substrate. The fin shaped structure further includes a silicon germanium (SiGe) layer extending within the fin shaped structure and occupying the whole top portion of the shaped structure. The fin shaped structure is a semiconductor fin shaped structure, and the material of the silicon substrate is different from the material of the silicon germanium layer The shallow trench isolation is disposed on the top portion and the bottom surface of the fin shaped structure.

Abstract: An asymmetrical fin structure includes a substrate. The substrate includes a top surface. A fin element extends from the substrate and connects to the substrate. The fin element includes two sidewalls respectively disposed at two opposite sides of the fin element. The sidewalls contact the top surface of the substrate. An epitaxial layer contacts and only covers one of the sidewalls. The other sidewall on the fin element does not contact any epitaxial layer.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first fin-shaped structure thereon; forming a spacer adjacent to the first fin-shaped structure; using the spacer as mask to remove part of the substrate for forming a second fin-shaped structure, in which the second fin-shaped structure comprises a top portion and a bottom portion; and forming a doped portion in the bottom portion of the second fin-shaped structure.

Abstract: The invention provides a method for fabricating a fin field effect transistor (FinFET), comprising: providing a substrate having a logic region and a large region; forming a plurality of fin structures in the logic region by removing a portion of the substrate in the logic region; forming an oxide layer on the substrate filling in-between the fin structures in the logic region; forming an first epitaxial structure in the large region by removing a portion of the substrate in the large region; exposing a portion of the fin structures and a portion of the epitaxial structure by removing a portion of the oxide layer; and forming a gate electrode on portions of the fin structures.

Abstract: A semiconductor device and method of forming the same, the semiconductor device includes a first and second fin shaped structures, a first and second gate structures and a first and second plugs. The first and second fin shaped structures are disposed on a first region and a second region of a substrate and the first and second gate structure are disposed across the first and second fin shaped structures, respectively. A dielectric layer is disposed on the substrate, covering the first and second gate structure. The first and second plugs are disposed in the dielectric layer, wherein the first plug is electrically connected first source/drain regions adjacent to the first gate structure and contacts sidewalls of the first gate structure, and the second plug is electrically connected to second source/drain regions adjacent to the second gate structure and not contacting sidewalls of the second gate structure.

Abstract: A semiconductor device and a method of fabricating the same, the semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure is disposed on the silicon substrate and includes a silicon germanium (SiGe) layer extending from bottom to top in the fin shaped structure. The shallow trench isolation covers a bottom portion of the fin shaped structure.