Abstract: A stethoscope includes a tube and a sound conducting assembly. The tube is formed by a plastic injection molding process or a thermal forming process. The sound conducting assembly is disposed in the tube. The tube is completely formed by another plastic injection molding process or another thermal forming process to enclose the sound conducting assembly. The stethoscope is directly obtained in the injection molding machine, and the step of inserting the sound conducting assembly through the tube is not needed.

Abstract: This application provides an interface calling simulation method for developing an application program performed by an electronic device. The electronic device receives an interface calling request for a target interface in an application program. The interface calling request includes interface calling information of the target interface. The electronic device identifies, within a simulated interface set for a simulation interface corresponding to the target interface. The simulated interface set includes simulated interfaces that simulate real interfaces in the application program. The electronic device compares the interface calling information of the target interface with interface configuration information of the simulated interface.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first active region and a second active region adjacent to the first active region, a first gate stack extending across the first active region in a first direction, an isolation feature extending across the second active region in the first direction; and a first gate-cut feature sandwiched between the first gate stack and the isolation feature.

Abstract: A receiver includes at least one receive channel. The at least one receive channel includes a first receive channel, and the first receive channel includes a first inductor and a first receiving circuit that are coupled to each other. The first inductor is configured to filter a received signal of a first frequency band to obtain a first received signal. A self-resonant frequency of the first inductor is in an interference frequency band corresponding to the first frequency band. The first receiving circuit is configured to process the first received signal.

Abstract: Disclosed are a magnetic core structure and a magnetic component. The magnetic core structure includes N winding columns and two cover plates, and N is a positive integer, wherein each winding column is provided with a first hollow channel, the two cover plates are disposed at two ends of each winding column, each cover plate is provided with N first through holes, the N winding columns are in a one-to-one correspondence with the N first through holes of each cover plate, and the first hollow channel of each winding column is communicated with the first through holes located on two sides thereof and corresponding thereto. Therefore, the channels for air flow can be added, so that the heat dissipation efficiency is improved when the magnetic core structure is applied to the magnetic component.

Abstract: A panel assembly includes a panel frame having one or more air outlets surrounding a reference axis. The one or more air outlets include an adjustable port having a port inner edge close to the reference axis and a port outer edge away from the reference axis. On the reference axis, a projection of the port inner edge is located on a side of a projection of the port outer edge facing an outer end of the reference axis. The panel assembly further includes an adjustable plate movably arranged at the adjustable port and having a low-wind-feeling position, at which a plate inner edge of the adjustable plate is close or linked to the port inner edge, and a radial air outlet configured to output air in a direction away from the reference axis is formed between the port outer edge and a plate outer edge of the adjustable plate.

Abstract: In various examples, a technique for securely transmitting CAN (Controller Area Network) messages is disclosed that includes receiving, using a cryptographic engine, a message from an application to be transmitted over a CAN (Controller Area Network) bus, wherein the cryptographic engine executes a secure firmware and is implemented on an on-die discrete processor. The technique further includes accessing, using the secure firmware, a key from a plurality of keys associated with an authentication process from a secure memory associated with the cryptographic engine. Additionally, the technique includes computing an authentication tag using the key and the message and transmitting the message with the authentication tag over the CAN bus to a destination address.

Abstract: A semiconductor structure includes a semiconductor-on-insulator (SOI) substrate including a handle substrate, a buried insulating layer, and a top semiconductor layer; a first deep trench isolation structure that vertically extends through the top semiconductor layer and the buried insulating layer, and includes a first inner insulating liner laterally surrounding a first portion of the top semiconductor layer that is located in a first device region in a plan view, a first non-insulating moat structure laterally surrounding the first inner insulating liner, and a first outer insulating liner that laterally surrounds the first non-insulating moat structure; and a resistive memory array located on the first portion of the top semiconductor layer, and located entirely within the first device region in the plan view.

Abstract: The present disclosure is related to a file processing method, electronic apparatus and storage medium, the file processing method including: updating a file list according to file access information for a file in a storage device, wherein the file list contains file inode numbers of files to be defragmented; defragmenting the files to be defragmented corresponding to the file inode numbers in the storage device, according to the updated file list, in response to the occurrence of a triggering event.

Abstract: Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, a top electrode, and a storage element layer. The storage element layer is disposed between the bottom and top electrodes. An extending direction of a sidewall of the storage element layer is different from an extending direction of a sidewall of the top electrode. A semiconductor device having the memory cell is also provided.

Abstract: A phase change random access memory (PCRAM) device includes a memory cell overlying an inter-metal dielectric (IMD) layer, a protection coating, and a first sidewall spacer. The memory cell includes a bottom electrode, a top electrode and a phase change element between the top electrode and the bottom electrode. The protection coating is on an outer sidewall of the phase change element. The first sidewall spacer is on an outer sidewall of the protection coating. The first sidewall spacer has a greater nitrogen atomic concentration than the protection coating. The protection coating forms a first interface with the phase change element. The first interface has a first slope at a first position and a second slope at a second position higher than the first position, the second slope is different from the first slope.

Abstract: The disclosure provides a power management method. The power management method is applicable to an electronic device. The electronic device is electrically coupled to an adapter, and includes a system and a battery. The adapter has a feed power. The battery has a discharge power. The power management method of the disclosure includes: reading a power value of the battery; determining a state of the system; and discharging power to the system, when the system is in a power-on state and the power value is greater than a charging stopping value, by using the battery, and controlling, according to the discharge power and the feed power, the adapter to selectively supply power to the system. The disclosure further provides an electronic device using the power management method.

Abstract: A fracturing effect determination method for phase transition fracturing deep rock, comprising: obtaining initial data of a true triaxial rock of a fracture hole; fracturing true triaxial rock and obtaining acoustic emission information in the fracturing process; obtaining test data of the true triaxial rock after fracturing; inputting initial data and test data into a preset formula to generate test data; determining quantitative data of fracturing according to acoustic emission information and test data and determining the fracturing effect of true triaxial rock according to the quantitative data of fracturing. The method is implemented using a device comprising a carbon dioxide fracturing device, a true triaxial loading device, a fracturing starter, a storage tank, and a liquid filling device.

Abstract: Provided are a semiconductor structure, a method for manufacturing same, and a memory. The semiconductor structure includes the following: a substrate; multiple transistor groups located on the substrate and arranged in an array, where each transistor group includes a first transistor and a second transistor; and the first transistor and the second transistor each include: a channel region; a source and a drain located at two opposite ends of the channel region; and a gate located on a side, in two opposite sides of the channel region, away from another transistor; and multiple connection structures located between a channel region of the first transistor and a channel region of the second transistor, where the channel region of the first transistor is connected to the channel region of the second transistor by the connection structure.

Abstract: A memory cell includes a dielectric structure, a storage element structure, and a top electrode. The storage element structure is disposed in the dielectric structure, and the storage element structure includes a first portion and a second portion. The first portion includes a first side and a second side opposite to the first side, where a width of the first side is less than a width of the second side. The second portion is connected to the second side of the first portion, where a width of the second portion is greater than the width of the first side. The top electrode is disposed on the storage element structure, where the second portion is disposed between the first portion and the top electrode.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes first nanostructures and second nanostructures formed over a substrate, and a first gate structure formed over the first nanostructures. The semiconductor device structure includes a second gate structure formed over the second nanostructures, and the second gate structure includes a gate dielectric layer, a first type work function layer and a filling layer. The semiconductor device structure includes a first isolation layer between the first gate structure and the second gate structure, and the first isolation layer includes a first sidewall surface, and the first sidewall surface is in direct contact with a first interface between the gate dielectric layer and the first type work function layer and a second interface between the work function layer and the filling layer.

Abstract: A semiconductor structure includes a base layer, a metal-containing gate, a high-k layer and a spacer. The metal-containing gate is disposed over the base layer. The high-k layer is disposed between the base layer and the metal-containing gate. The high-k layer has a protruding portion that protrudes out from a bottom of the metal-containing gate. The spacer is disposed on the sidewall of the metal-containing gate and covers the protruding portion of the high-k layer.

Abstract: A semiconductor device including a substrate, a semiconductor layer, a gate, a dielectric structure, and a source/drain structure is provided. The semiconductor layer is disposed on the substrate, and is made of a first low dimensional material. The gate is disposed on the substrate and overlaps the semiconductor layer. The dielectric structure is disposed on the semiconductor layer and includes a trench structure reaching a portion of the semiconductor layer. The source/drain structure includes a barrier layer made of a second low dimensional material continuously extending along the trench structure and a metal fill filling a volume surrounded by the barrier layer.

Abstract: A memory array, a semiconductor chip and a method for forming the memory array are provided. The memory array includes first signal lines, second signal lines and memory cells. The first signal lines extend along a first direction. The second signal lines extend along a second direction over the first signal lines. The memory cells are defined at intersections of the first and second signal lines, and respectively include a resistance variable layer, a switching layer, an electrode layer and a carbon containing dielectric layer. The switching layer is overlapped with the resistance variable layer. The electrode layer lies between the resistance variable layer and the switching layer. The carbon containing layer laterally surrounds a stacking structure including the resistance variable layer, the switching layer and the electrode layer.

Abstract: Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, an etching stop layer, a variable resistance layer, and a top electrode. The etching stop layer is disposed on the bottom electrode. The variable resistance layer is embedded in the etching stop layer and in contact with the bottom electrode. The top electrode is disposed on the variable resistance layer. A semiconductor device having the memory cell is also provided.