Abstract: In some examples, a system processes event data and video frames produced by a program during execution of the program, the event data representing user actions with respect to a graphical user interface (GUI) of the program. The system identifies an area of the GUI that corresponds to a respective user action of the user actions, wherein identifying the area of the GUI uses a first video frame before an event corresponding to the respective user action, and a second video frame after the event corresponding to the respective user action. The system identifies, based on the identified area, a test object representing a user interface (UI) element, and generates a test script for testing the program, the test script including the test object.

Abstract: A magnetic component is provided. The magnetic component comprises a primary coil group, a secondary coil group, and a magnetic core. A first primary coil and a second primary coil of the primary coil group are winding around a first winding column and a second winding column of the magnetic core, respectively. The number of turns of the first primary coil is different from the number of turns of the second primary coil. A first secondary coil and a second secondary coil of the secondary coil group are winding around the first winding column and the second winding column, respectively. The number of turns of the first secondary coil is different from the turns of the second secondary coil.

Abstract: A memory cell includes a bottom electrode, a memory element, spacers, a selector and a top electrode. The memory element is located on the bottom electrode and includes a first conductive layer, a second conductive layer and a storage layer. The first conductive layer is electrically connected to the bottom electrode. The second conductive layer is located on the first conductive layer, wherein a width of the first conductive layer is smaller than a width of the second conductive layer. The storage layer is located in between the first conductive layer and the second conductive layer. The spacers are located aside the second conductive layer and the storage layer. The selector is disposed on the spacers and electrically connected to the memory element. The top electrode is disposed on the selector.

Abstract: A chip includes an instruction storage unit, a processor core, an input circuit, a neural network circuit, power-consuming circuits, and a switch circuit. When the chip runs, the processor core performs a processing operation according to the instructions under being supplied with a current. At the same time, the neural network circuit predicts an upcoming change of the current according to data stream, representing the time-varying current, from the input circuit, and outputs a corresponding control signal. The switch circuit selectively provides a clock to one or more power-consuming circuits under the control of the control signal, so that each power-consuming circuit receiving the clock operates under being supplied with the current. Therefore, the chip can predict upcoming requirement of high electricity consumption, and duly start up a current wasting mechanism in advance, to avoid an excessive voltage drop without affecting operation efficiency of the processor core.

Abstract: Embodiments of the present disclosure provide a storage management method, an electronic device, and a computer program product. The method includes determining at least one count corresponding to at least one data segment of a file in a file set, the file set being stored in a local storage device, and the at least one count indicating the number of occurrences of the at least one data segment in the file set. The method further includes determining a deduplication ratio of the file based on the at least one count, the deduplication ratio indicating an overlapping level of the file with other files in the file set. The method further includes migrating the file from the local storage device to a remote storage device according to a determination that the deduplication ratio of the file is lower than a threshold.

Abstract: A manufacturing method of a semiconductor packaging device is provided, and the manufacturing method includes steps as follows. A working chip is soldered on one surface of a wiring board so that an working circuit inbuilt inside a chip body of the working chip is electrically connected to the wiring board. A silicon thermal conductivity element is soldered on one surface of a heat-dissipating metal lid. The heat-dissipating metal lid is fixedly covered on the wiring board such that the silicon thermal conductivity element is sandwiched between the chip body and the heat-dissipating metal lid, and the silicon thermal conductivity element is electrically isolated from the working circuit of the chip body and the wiring board.

Abstract: Disclosed herein is a method for alleviating arthritis, which includes administering to a subject in need thereof a composition containing epidermal growth factor.

Abstract: A memory array, a semiconductor chip and a method for forming the memory array are provided. The memory array includes first signal lines, second signal lines and memory cells. The first signal lines extend along a first direction. The second signal lines extend along a second direction over the first signal lines. The memory cells are defined at intersections of the first and second signal lines, and respectively include a resistance variable layer, a switching layer, an electrode layer and a carbon containing dielectric layer. The switching layer is overlapped with the resistance variable layer. The electrode layer lies between the resistance variable layer and the switching layer. The carbon containing layer laterally surrounds a stacking structure including the resistance variable layer, the switching layer and the electrode layer.

Abstract: A biodegradable joint implant comprises a joint scaffold and a film layer coated on the surface of the joint scaffold. The joint scaffold comprises a first anchor fixing, a second fixing and a flexible spacer, and the first anchor fixing and the second anchor fixing are respectively axially connected to opposite sides of the flexible spacer. The joint implant is made of biodegradable material, and the film layer contains at least one substance that can induce tissue growth. A method for preparing the joint implant and a joint replacement method using the joint implant are also provided.

Abstract: A semiconductor structure includes a base layer, a metal-containing gate, a high-k layer and a spacer. The metal-containing gate is disposed over the base layer. The high-k layer is disposed between the base layer and the metal-containing gate. The high-k layer has a protruding portion that protrudes out from a bottom of the metal-containing gate. The spacer is disposed on the sidewall of the metal-containing gate and covers the protruding portion of the high-k layer.

Abstract: The present disclosure provides a rigid high-gloss wear-resistant and scratch-resistant flooring. The flooring includes a surface layer, an intermediate Spc layer, and a decorative layer that are laminated; where the surface layer is prepared by combining a melamine glue and a color film; the intermediate Spc layer is prepared by mixing polyvinyl chloride resin, calcium carbonate, a plasticizer, and a stabilizer; and the decorative layer is prepared by a high-temperature material. The rigid high-gloss wear-resistant and scratch-resistant flooring is prepared by the melamine glue and the special color film, has an intermediate Spc layer, and has the decorative layer on a back side. The flooring is prepared by three different layers through a high temperature and a high pressure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first stacked nanostructure and a second stacked nanostructure formed over a substrate. The semiconductor device structure includes a first gate structure formed over the first stacked nanostructure, and the first gate structure includes a first portion of a gate dielectric layer and a first portion of a filling layer. The semiconductor device structure includes a second gate structure formed over the second stacked nanostructure, and the second gate structure includes a second portion of the gate dielectric layer and a second portion of the filling layer. The semiconductor device structure includes a first isolation layer between the first gate structure and the second gate structure, and a sidewall of the first portion of the gate dielectric layer extends beyond a sidewall of the filling layer.

Abstract: A memory cell includes a bottom electrode, a memory element, a selector, a top electrode and a connecting structure. The memory element is disposed on the bottom electrode. The selector is disposed on the memory element. The top electrode is disposed on the selector. The connecting structure is electrically connecting the memory element to the selector, wherein the connecting structure includes a base portion and a pillar portion. The base portion disposed on the memory element. The pillar portion is disposed on the base portion, wherein the pillar portion is physically connected to the selector, and includes a tapered pillar foot.

Abstract: A memory cell includes a bottom electrode, a memory element, spacers, a selector and a top electrode. The memory element is located on the bottom electrode and includes a first conductive layer, a second conductive layer and a storage layer. The first conductive layer is electrically connected to the bottom electrode. The second conductive layer is located on the first conductive layer, wherein a width of the first conductive layer is smaller than a width of the second conductive layer. The storage layer is located in between the first conductive layer and the second conductive layer. The spacers are located aside the second conductive layer and the storage layer. The selector is disposed on the spacers and electrically connected to the memory element. The top electrode is disposed on the selector.

Abstract: A reciprocating unidirectional electromagnetic resistance device includes a shaft having a flywheel installed to a first end of the shaft, an electromagnetic braking unit, and a first sensing device. A spring return device and a second sensing device are installed at a second end of the shaft, and a pull rope device is installed at the middle of the shaft. The electromagnetic braking unit and the spring return device are integrated into a single module and provided for an operator to perform a reciprocating motion to pull out a pull rope of the pull rope device and drive the shaft, the flywheel and the spring return device synchronously, and the electromagnetic braking unit acts an electromagnetic resistance onto the flywheel, so that the flywheel has the excellent precise resistance of the electromagnetic braking unit. When released, the pull rope can be retracted to achieve the reciprocating motion effect.

Abstract: A memory cell includes a bottom electrode, a first dielectric layer, a variable resistance layer, and a top electrode. The first dielectric layer laterally surrounds the bottom electrode. A top surface of the bottom electrode is located at a level height lower than that of a top surface of the first dielectric layer. The variable resistance layer is disposed on the bottom electrode and the first dielectric layer. The variable resistance layer contacts the top surface of the bottom electrode and the top surface of the first dielectric layer. The top electrode is disposed on the variable resistance layer.

Abstract: The disclosure provides an antenna structure, including at least one supporting module, a first antenna, and a second antenna. The first antenna is disposed on the at least one supporting module and includes a first feeding point and a first zero-current zone. The first antenna is connected to a ground plane. The second antenna is disposed on the at least one supporting module and includes a second feeding point and a second zero-current zone. The second antenna is connected to the ground plane. The first feeding point of the first antenna is disposed in the second zero-current zone of the second antenna, and the second feeding point of the second antenna is disposed in the first zero-current zone of the first antenna.

Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip that includes depositing a phase change material layer over a bottom electrode. The phase change material is configured to change its degree of crystallinity upon temperature changes. A top electrode layer is deposited over the phase change material layer, and a hard mask layer is deposited over the top electrode layer. The top electrode layer and the hard mask layer are patterned to remove outer portions of the top electrode layer and to expose outer portions of the phase change material layer. An isotropic etch is performed to remove portions of the phase change material layer that are uncovered by the top electrode layer and the hard mask layer. The isotropic etch removes the portions of the phase change material layer faster than portions of the top electrode layer and the hard mask layer.

Abstract: A memory cell includes a memory device, a connecting structure, an insulating layer and a selector. The connecting structure is disposed on and electrically connected to the memory device. The insulating layer covers the memory device and the connecting structure. The selector is located on and electrically connected to the memory device, where the selector is disposed on the insulating layer and connected to the connecting structure by penetrating through the insulating layer.

Abstract: A method for detecting and attenuating the impact of interference in a signal of a radio receiver with multiple tuners. The method includes providing a first input signal RF1 to a first tuner T1; simultaneously providing a second input signal RF2 to a second tuner T2; simultaneously producing a first intermediate high injection signal IFH1, by the first tuner T1, using the first input signal RF1 filtered on a first frequency fE, and a first intermediate low injection signal IFB2, by the second tuner T2, using the second input signal RF2 filtered on the first frequency fE; comparing the first intermediate high injection signal IFH1 and the first intermediate low injection signal IFB2; selecting one out of the first intermediate high injection signal IFH1 and the first intermediate low injection signal IFB2 to be decoded by the radio receiver.