Abstract: A microelectronic assembly includes a substrate, a first and second microelectronic elements, a lead finger, electrical connections extending between contacts of the second microelectronic element and the lead fingers, and an encapsulant overlying at least portions of the first and second microelectronic elements, lead finger and electrical connections. The substrate has contacts at a first surface and terminals at an opposed second surface that are electrically connected with the substrate contacts. The first microelectronic element has contacts exposed at its front face. The front face of the first microelectronic element is joined to the substrate contacts. The second microelectronic element overlies the first microelectronic element and has contacts at a front face facing away from the substrate. The lead frame has lead fingers, wherein the second surface of the substrate and the lead fingers define a common interface for electrical interconnection to a component external to the microelectronic assembly.

Abstract: A microelectronic assembly can include a microelectronic element and a lead frame having a first unit and a second unit overlying the first unit and assembled therewith. The first unit can have a first metal layer comprising a portion of the thickness of the lead frame and including terminals and first conductive elements extending away therefrom. The second unit can have a second metal layer comprising a portion of the thickness of the lead frame and including bond pads and second conductive elements extending away therefrom. The first and second units each can have an encapsulation supporting at least portions of the respective first and second conductive elements. At least some of the second conductive elements can overlie portions of corresponding ones of the first conductive elements and can be joined thereto. The microelectronic element can have contacts electrically connected with the bond pads of the lead frame.

Abstract: A microelectronic unit can include a lead frame and a device chip. The lead frame can have a plurality of monolithic lead fingers extending in a plane of the lead frame. Each lead finger can have a fan-out portion and a chip connection portion extending in the lead frame plane. The fan-out portions can have first and second opposed surfaces and a first thickness in a first direction between the opposed surfaces. The chip connection portions can have a second thickness smaller than the first thickness. The chip connection portions can define a recess below the first surface. The device chip can have a plurality of at least one of passive devices or active devices. The device chip can have contacts thereon facing the chip connection portions and electrically coupled thereto. At least a portion of a thickness of the device chip can extend within the recess.

Abstract: A component can include a substrate having a first surface and a second surface remote therefrom, an opening extending in a direction between the first and second surfaces, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The conductive via can include a plurality of base particles each including a first region of a first metal substantially covered by a layer of a second metal different from the first metal. The base particles can be metallurgically joined together and the second metal layers of the particles can be at least partially diffused into the first regions. The conductive via can include voids interspersed between the joined base particles. The voids can occupy 10% or more of a volume of the conductive via.

Abstract: A system for improving the acoustic performance of an ultrasound transducer by reducing artifacts within the acoustic spectrum is disclosed. The system includes an acoustic layer having an array of acoustic elements, a dematching layer coupled to the acoustic layer and having an acoustic impedance greater than an acoustic impedance of the acoustic layer, and an interposer layer coupled to the dematching layer and comprising a substrate and a plurality of conductive element. The interposer layer is formed to have an acoustic impedance lower than the acoustic impedance of the dematching layer. The ultrasound transducer also includes an integrated circuit coupled to the interposer layer and electrically connected to the array of acoustic elements through the dematching layer and the interposer layer.

Abstract: An apparatus and method, the apparatus includes a substrate configured to support a plurality of dielectric layers, a device coupling area positioned in the substrate, and a plurality of gas exit apertures formed through the substrate. The plurality of gas exit apertures is configured to provide venting of at least one of moisture and outgassed material and the device coupling area is configured to receive an electronic device coupleable to the plurality of dielectric layers.

Abstract: A system for improving the acoustic performance of an ultrasound transducer by reducing artifacts within the acoustic spectrum is disclosed. The system includes an acoustic layer having an array of acoustic elements, a dematching layer coupled to the acoustic layer and having an acoustic impedance greater than an acoustic impedance of the acoustic layer, and an interposer layer coupled to the dematching layer and comprising a substrate and a plurality of conductive element. The interposer layer is formed to have an acoustic impedance lower than the acoustic impedance of the dematching layer. The ultrasound transducer also includes an integrated circuit coupled to the interposer layer and electrically connected to the array of acoustic elements through the dematching layer and the interposer layer.

Abstract: An apparatus and method, the apparatus includes a substrate configured to support a plurality of dielectric layers, a device coupling area positioned in the substrate, and a plurality of gas exit apertures formed through the substrate. The plurality of gas exit apertures is configured to provide venting of at least one of moisture and outgassed material and the device coupling area is configured to receive an electronic device coupleable to the plurality of dielectric layers.

Abstract: A detector module for a CT imaging system is provided. The detector module includes a sensor element to convert x-rays to electrical signals. The sensor element is coupled to a data acquisition system (DAS) via an interconnect system, the DAS comprised of an electronic substrate and an integrated circuit. The interconnect system couples the sensor element, electronic substrate, and integrated circuit by way of a contact pad interconnect together with a wire bond interconnect or an additional contact pad interconnect.

Abstract: A detector module for a CT imaging system is provided. The detector module includes a sensor element to convert x-rays to electrical signals. The sensor element is coupled to a data acquisition system (DAS) via an interconnect system, the DAS comprised of an electronic substrate and an integrated circuit. The interconnect system couples the sensor element, electronic substrate, and integrated circuit by way of a contact pad interconnect together with a wire bond interconnect or an additional contact pad interconnect.

Abstract: A method of making an electronic package is described, wherein a substrate is provided with a pattern of conductive pads and a portion of solder positioned on selected ones of the pattern of copper pads. The solder is then reflowed to form partial hemispherically shaped caps on the selected copper pads. The partial hemispherically shaped caps are then coated with a solder flux. A thin semiconductor chip with a pattern of conductive elements, corresponding to partial hemispherically shaped capped pads, is then positioned on the substrate so that the conductive elements of the thin semiconductor chip substantially line up with the partial hemispherically shaped capped pads of the substrate. The solder is then heated to reflow temperature and an electrical couple is formed between the thin semiconductor chip and the substrate.

Abstract: A solder interconnection uses preferably lead-rich solder balls for making a low temperature chip attachment directly to any of the higher levels of packaging substrate. After a solder ball has been formed using standard processes, a thin cap layer of preferably pure tin is deposited on a surface of the solder balls. An interconnecting eutectic alloy is formed upon reflow. Subsequent annealing causes tin to diffuse into the lead, or vice versa, and intermix, thereby raising the melting point temperature of the cap layer of the resulting assembly. This structure and process avoids secondary reflow problems during subsequent processing.

Abstract: A method and structure to electrically couple a semiconductor device to a substrate that is divided into a plurality of segments. Alternatively, a semiconductor device may be divided into a plurality of segments and the plurality of segments are electrically coupled to a single substrate.

Abstract: A solder interconnection uses preferably lead-rich solder balls for making a low temperature chip attachment directly to any of the higher levels of packaging substrate. After a solder ball has been formed using standard processes, a thin cap layer of preferably pure tin is deposited on a surface of the solder balls. An interconnecting eutectic alloy is formed upon reflow. Subsequent annealing causes tin to diffuse into the lead, or vice versa, and intermix, thereby raising the melting point temperature of the cap layer of the resulting assembly. This structure and process avoids secondary reflow problems during subsequent processing.

Abstract: A method of making an electronic package is described, wherein a substrate is provided with a pattern of conductive pads and a portion of solder positioned on selected ones of the pattern of copper pads. The solder is then reflowed to form partial hemispherically shaped caps on the selected copper pads. The partial hemispherically shaped caps are then coated with a solder flux. A thin semiconductor chip with a pattern of conductive elements, corresponding to partial hemispherically shaped capped pads, is then positioned on the substrate so that the conductive elements of the thin semiconductor chip substantially line up with the partial hemispherically shaped capped pads of the substrate. The solder is then heated to reflow temperature and an electrical couple is formed between the thin semiconductor chip and the substrate.

Abstract: A method and structure to electrically couple a semiconductor device to a substrate that is divided into a plurality of segments. Alternatively, a semiconductor device may be divided into a plurality of segments and the plurality of segments are electrically coupled to a single substrate.

Abstract: A method and an arrangement for measuring the cooling rate and temperature differential between the top and bottom surfaces of a printed circuit board. The method is intended to facilitate control over the temperature differential which is encountered between the top and bottom of the printed circuit board so as to prevent warpage thereof during the formation of solder joints in a reflow solder oven.

Abstract: A method for providing a package for a semiconductor chip that minimizes stresses and strains that arise from differential thermal expansion on chip-to-substrate or chip-to-card interconnections. A collar element of one or more elements is provided. Adhesive material connects the collar element to the electric device and to the substrate that supports it, forming a unitary electrical package.

Abstract: The present invention provides a package for a semiconductor chip that minimizes stresses and strains that arise from differential thermal expansion on chip-to-substrate or chip-to-card interconnections. A collar element of one or more elements is provided. Adhesive material connects the collar element to the electric device and to the substrate that supports it, forming a unitary electrical package.

Abstract: A method and structure to electrically couple a semiconductor device to a substrate that is divided into a plurality of segments. Alternatively, a semiconductor device may be divided into a plurality of segments and the plurality of segments are electrically coupled to a single substrate.