Abstract: A multi-die integrated circuit device and a method of fabricating the multi-die integrated circuit device involve a substrate. Two or more dice include components that implement functionality of the multi-die integrated circuit. The components include logic gates. The multi-die integrated circuit device also includes a spacer disposed between the substrate and each of the two or more dice. Each of the two or more dice makes direct electrical contact with the substrate without making direct electrical contact with the spacer through holes in the spacer.

Abstract: An electronic system includes two integrated circuit (IC) packages that are connected by a package to package (PP) connector. The PP connector may include cabling between a first cabling connector and a second cabling connector. The first cabling connector may be seated to a first carrier connector upon a first IC device carrier of the first IC device package. The second cabling connector may be seated to a second carrier connector upon a second IC device carrier of the second IC device package. The electronic system may further include a heat sink connected to the IC packages, to the first cabling connector, and to the second cabling connector. An IC device may route I/O data through the PP connector, effectively increasing the number of I/O routes.

Abstract: An integrated circuit package includes a substrate, a flip chip die, and a capacitor. The flip chip die is attached to the substrate via die-to-substrate interconnects. The capacitor is attached to the flip chip die via capacitor-to-die interconnects so that the capacitor occupies a region between the flip chip die and the substrate. Such placement of the capacitor on a flip chip die has the advantage of reducing the distance between the capacitor and its core, thereby reducing unwanted line inductance and series resistance effects. Integrated circuit performance is thereby enhanced.

Abstract: An alignment carrier, assembly and methods that enable the precise alignment and assembly of two or more semiconductor die using an interconnect bridge. The alignment carrier includes a substrate composed of a material that has a coefficient of thermal expansion that substantially matches that of an interconnect bridge. The alignment carrier further includes a plurality of solder balls located on the substrate and configured for alignment of two or more semiconductor die.

Abstract: A device substrate includes a core material. A capacitor sheet can be affixed adjacent to a surface of the core material, where the capacitor sheet covers the surface of the core material. A first opening can extend through both capacitor sheet and the core material, where the first opening are larger than a substrate pass through-hole. An electrically inert material can fill the first opening. A second opening can extend parallel to the first opening through the electrically inert material, where the second opening is at least as large as the substrate pass through-hole and having sidewalls enclosed within the electrically inert material.

Abstract: Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having a mixed under-bump metallization (UBM) size and pitch on a single die. A first set of UBMs having a first total plateable surface area is formed on a first region of a die. A second set of UBMs having an equal total plateable surface area is formed on a second region of the die. A solder bump having a calculated solder height is applied to a plateable surface of each UBM. The solder height is calculated such that a volume of solder in the first region is equal to a volume of solder in the second region.

Abstract: Disclosed are embodiments of forming porous copper on the end of a copper pillar. The embodiments may be used to remove solder from selected locations on a chip or laminate substrate.

Abstract: Direct bonding heterogeneous integration packaging structures and processes include a packaging substrate with first and second opposing surfaces. A trench or a pedestal is provided in the first surface. A bridge is disposed in the trench or is adjacent the pedestal sidewall, wherein the bridge includes an upper surface coplanar with the first surface of the package substrate. At least two chips in a side by side proximal arrangement overly the bridge and the packaging substrate, wherein the bridge underlies peripheral edges of the at least two chips in the side by side proximal arrangement. The at least two chips include a plurality of electric connections that are directly coupled to corresponding electrical connections on the bridge and on the packaging substrate.

Abstract: At least one plating pen is brought into aligned relationship with at least one hole defined in a board. The pen includes a central retractable protrusion, a first shell surrounding the protrusion and defining a first annular channel therewith, and a second shell surrounding the first shell and defining a second annular channel therewith. The protrusion is lowered to block the hole and plating material is flowed down the first channel to a surface of the board and up into the second channel, to form an initial deposit on the board surface. The protrusion is raised to unblock the hole, and plating material is flowed down the first annular channel to side walls of the hole and up into the second annular channel, to deposit the material on the side walls of the hole.

Abstract: An IC device package includes a carrier, one or more IC devices and a lid. The lid includes a lid-ridge. The lid is connected to the carrier by connecting the lid-ridge to the carrier with first nano particle metallic paste, prior to connecting the IC device to the carrier. Subsequent to connecting the IC device to the carrier, the lid is connected to the lid-ridge with second nano particle metallic paste. The nano particle metallic paste may be sintered to form a metallic connection. In multi-IC device packages, the lid-ridge may be positioned between the lid and the carrier and between the IC devices.

Abstract: Disclosed are embodiments of forming porous copper on the end of a copper pillar. The embodiments may be used to remove solder from selected locations on a chip or laminate substrate.

Abstract: An integrated circuit (IC) package, and a method for fabricating an IC package is described. A set of semiconductor chips, a set of corner guard structures and a chip carrier are provided. The set of semiconductor chips and the set of corner guard structure placed and bonded to a first surface of the chip carrier. The set of semiconductor chips are in electrical contact with the chip carrier. Respective corner guard structures are placed proximate to the corners of respective semiconductor chips. The coefficient of thermal expansion (CTE) of the set of corner guard structures is selected to ameliorate chip-package interaction (CPI) related failures due to differences between a CTE of the set of semiconductor chips and a CTE of the chip carrier.

Abstract: Electroplating techniques including a system for treating a solution for use in an electroplating application and a method for using the system are provided. The system can have: a gas dispersing portion configured to treat the solution by dispersing a gas into the solution to control a concentration of a predetermined cation of a metal to be electroplated in the electroplating application; a filter portion configured to treat the solution by filtering the solution to remove a quantity of metal residue; and a circulation mechanism configured to divert the solution to one of a plating tool and a combination of the gas dispersing portion and the filter portion based on a result of an analysis of the solution.

Abstract: A method and structure for joining a semiconductor device and a laminate substrate or two laminate substrates where the joint is formed with lead free solders and lead free compositions. The various lead free solders and lead free compositions are chosen so that there is a sufficient difference in liquidus temperatures such that some components may be joined to, or removed from, the laminate substrate without disturbing other components on the laminate substrate.

Abstract: A multi-die integrated circuit device and a method of fabricating the multi-die integrated circuit device involve a substrate. Two or more dice include components that implement functionality of the multi-die integrated circuit. The components include logic gates. The multi-die integrated circuit device also includes a spacer disposed between the substrate and each of the two or more dice. Each of the two or more dice makes direct electrical contact with the substrate without making direct electrical contact with the spacer through holes in the spacer.

Abstract: A multi-die integrated circuit device and a method of fabricating the multi-die integrated circuit device involve a substrate. Two or more dice include components that implement functionality of the multi-die integrated circuit. The components include logic gates. The multi-die integrated circuit device also includes a spacer disposed between the substrate and each of the two or more dice. Each of the two or more dice makes direct electrical contact with the substrate without making direct electrical contact with the spacer through holes in the spacer.

Abstract: An integrated circuit (IC) device tester includes contact probes. A liner is formed upon the contact probes. The liner includes a matrix of metal particles and glass particles. The metal particles of the liner allow the contact probe to pass an electrical current through the liner. The glass particles of the liner prevent C4 material from adhering to the liner.

Abstract: A device including a substrate, an upper capacitor, and a lower capacitor is described. The upper capacitor is mounted on the substrate and includes an upper body and a pillar that extends from the upper body towards the substrate. The lower capacitor includes a lower body that is disposed both lateral to the pillar and at least in part between the upper body and the substrate. Each of the upper capacitor and the lower capacitor is a respective discrete circuit component. Such capacitor stacking configurations facilitate the placement of larger numbers of capacitors in close proximity to microprocessor cores in integrated circuit modules without the need to increase module size.

Abstract: An alignment carrier, assembly and methods that enable the precise alignment and assembly of two or more semiconductor die using an interconnect bridge. The alignment carrier includes a substrate composed of a material that has a coefficient of thermal expansion that substantially matches that of an interconnect bridge. The alignment carrier further includes a plurality of solder balls located on the substrate and configured for alignment of two or more semiconductor die.

Abstract: A module including a first semiconductor device, a second semiconductor device, a bridge support structure and a base substrate. The semiconductor devices each having first bonding pads having a first solder joined with the base substrate and the semiconductor devices each having second and third bonding pads joined to second and third bonding pads on the bridge support structure by a second solder and a third solder, respectively, on the second and third bonding pads; the semiconductor devices positioned adjacent to each other such that the bridge support structure joins to both of the semiconductor devices by the second and third solders wherein the third bonding pads are larger than the second bonding pads and the third bonding pads are at a larger pitch than the second bonding pads.