Abstract: An aquatic plant biomass-based decomposable and antibacterial plastic masterbatch composition contains: environmental biodegradable polymer materials, aquatic plant fiber materials, natural decomposable polymer, antibacterial materials, mineral fillers, Bis (2-ethylhexyl) adipate (DOA), 1,1,1-Tris Methylolpropane 1,1,1-Trimethylolpropane (TMP), and silane coupling agent. Thereby, low cost, excellent mechanical properties, release of far infrared rays and antibacterial effect are achieved.

Abstract: Vias, along with methods for fabricating vias, are disclosed that exhibit reduced capacitance and resistance. An exemplary interconnect structure includes a first source/drain contact and a second source/drain contact disposed in a dielectric layer. The first source/drain contact physically contacts a first source/drain feature and the second source/drain contact physically contacts a second source/drain feature. A first via having a first via layer configuration, a second via having a second via layer configuration, and a third via having a third via layer configuration are disposed in the dielectric layer. The first via and the second via extend into and physically contact the first source/drain contact and the second source/drain contact, respectively. A first thickness of the first via and a second thickness of the second via are the same. The third via physically contacts a gate structure, which is disposed between the first source/drain contact and the second source/drain contact.

Abstract: An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The photo sensitive regions are in the semiconductor substrate. The dielectric layer is over a backside surface of the semiconductor substrate. The grid structure is over a backside surface of the dielectric layer. The grid structure includes a plurality of grid lines. Each of the grid lines comprises a lower portion and an upper portion forming an interface with the lower portion. The convex dielectric lenses are alternately arranged with the grid lines over the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are higher than an interface between the upper portion and the lower portion of each of the grid lines.

Abstract: An interconnect fabrication method is disclosed herein that utilizes a disposable etch stop hard mask over a gate structure during source/drain contact formation and replaces the disposable etch stop hard mask with a dielectric feature (in some embodiments, dielectric layers having a lower dielectric constant than a dielectric constant of dielectric layers of the disposable etch stop hard mask) before gate contact formation. An exemplary device includes a contact etch stop layer (CESL) having a first sidewall CESL portion and a second sidewall CESL portion separated by a spacing and a dielectric feature disposed over a gate structure, where the dielectric feature and the gate structure fill the spacing between the first sidewall CESL portion and the second sidewall CESL portion. The dielectric feature includes a bulk dielectric over a dielectric liner. The dielectric liner separates the bulk dielectric from the gate structure and the CESL.

Abstract: An electronic device manufacturing system configured to receive, by a processor, input data reflecting a feature related to a manufacturing process of a substrate. The manufacturing system is further configured to generate a characteristic sequence defining a relationship between at least two manufacturing parameters, and determine a relationship between one or more variables related to the feature and the characteristic sequence. The manufacturing system is further configured to determine a weight based on the determined relationship and apply the weight to the feature. The manufacturing system is further configured to train a machine-learning model in view of the weighted feature.

Abstract: The present disclosure relates to a processing apparatus and a processing method, and the processing apparatus includes a chamber, a wafer carrier, at least one air inlet and at least one electrode, wherein the wafer carrier is extended into the chamber, the gas inlet is arranged around the chamber, and the electrode is disposed on the chamber.

Abstract: Multiple chip module (MCM) structures are described. In an embodiment, a module includes a first and second components on the top side of a module substrate, a stiffener structure mounted on the top side of the module substrate, and a lid mounted on the stiffener structure and covering the first component and the second component. The stiffener is joined to the lid within a trench formed in a roof of the lid.

Abstract: A method for early warning a blind area of a vehicle. In the method, the electronic device obtains at least one target image acquired by at least one camera of the vehicle. The electronic device further determines parameters of at least one target object in each of the at least one target image and a three-dimensional detection frame for each of the at least one target object based on the parameters. The electronic device further obtains a target detection frame of each of the at least one target object in a top view image of a plane where the vehicle is located by projecting the three-dimensional detection frame into the top view image and outputs alert information in response that an overlapped area exists between the target detection frame and a preset blind area of the top view image.

Abstract: Provided is a semiconductor device including: a substrate, a plurality of isolation structures, a plurality of channel layers, and a gate structure. The substrate includes a plurality of fins thereon. The plurality of isolation structures are respectively disposed between the plurality of fins. A top surface of the plurality of isolation structures is higher than a top surface of the plurality of fins to form a plurality of openings. The plurality of channel layers are respectively disposed in the plurality of openings. Each channel layer is in contact with a corresponding fin and extends to cover a lower sidewall of a corresponding isolation structure, thereby forming a U-shaped structure. The gate structure is filled in the plurality of openings and extends to cover the top surface of the plurality of isolation structures.

Abstract: A method includes: forming first bond pads along a wafer; bonding a first die to a first set of the first bond pads, the first die being electrically connected to the wafer; depositing a gap-fill dielectric over the wafer and around the first die; forming openings in the gap-fill dielectric; forming first active through vias in physical contact with the second set of the first bond pads and first dummy through vias in physical contact with the third set of the first bond pads, the first active through vias being electrically connected to the wafer, the first dummy through vias being electrically isolated from the wafer; forming second bond pads along the first die, the first active through vias, and the first dummy through vias; and bonding a second die to the first die and to a first active via of the first active through vias.

Abstract: An electronic device manufacturing system configured to receive, by a processor, input data reflecting a feature related to a manufacturing process of a substrate. The manufacturing system is further configured to train a machine-learning model based on the input data reflecting the feature. The manufacturing system is further configured to modify the machine-learning model in view of the virtual knob for the feature.

Abstract: A method of identifying characters in images extracts features of a detection image including characters. Enhancement processing is performed on the detection image according to the features to obtain an enhanced image. Closed edges of the characters are detected in the enhanced image. First rectangular outlines of the characters are determined according to the closed edges. The first rectangular outlines are corrected to obtain second rectangular outlines. The characters are cropped from the detection image according to the second rectangular outlines. The method identifies characters in images accurately and rapidly.

Abstract: A method for an electric nail gun to drive the flywheel to transmit nailing energy, including boosting a start voltage of a battery so as to excite an electromagnet to work and then drive the flywheel loaded with nailing energy in a frictional manner to drive a nailing rod to hit the nail. Specifically, the start voltage is boosted by a voltage boost circuit and stored, and the start voltage can release electric charge to constantly excite the electromagnet to work until completion of the nailing action. Based on the present invention, the nailing quality of the electric nail gun can be enhanced.

Abstract: A method of recognizing target objects in images obtains a detection image of a target object. A template image is generated according to the target object. The detection image is compared with the template image to obtain a comparison result. Candidate regions of the target object are determined in the detection image according to the comparison result. At least one target region of the target object is obtained from the candidate regions. The method detects target objects in images very rapidly.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a gate electrode layer disposed over a substrate, a source/drain epitaxial feature disposed over the substrate, a first hard mask layer disposed over the gate electrode layer, and a contact etch stop layer (CESL) disposed over the source/drain epitaxial feature. The structure further includes a first interlayer dielectric (ILD) layer disposed on the CESL and a first treated portion of a second hard mask layer disposed on the CESL and the first ILD layer. A top surface of the first hard mask layer and a top surface of the first treated portion of the second mask layer are substantially coplanar. The structure further includes an etch stop layer disposed on the first hard mask layer and the first treated portion of the second mask layer.

Abstract: An internal rotor type nail drive device of electric nail gun, comprising a nailing rod and an internal rotor type rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator comprises a stator and a rotor arranged inside the stator, even groups of electromagnetic mutual action components are configured in pairs between the stator and the rotor, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by a specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified, and the kinetic energy for nailing can be increased.

Abstract: An electronic device includes a target metal segment, a first sensing circuit, and a second sensing circuit. The first sensing circuit is connected to the target metal segment and obtains a first parameter based on a first sensing signal of the target metal segment. The first parameter is used to indicate a distance between a target object and the target metal segment. The second sensing circuit is connected to the target metal segment and obtains a second parameter based on a second sensing signal of the target metal segment. The second parameter is used to indicate a type of the target object.

Abstract: Provided is a semiconductor device including: a substrate, a plurality of isolation structures, a plurality of channel layers, and a gate structure. The substrate includes a plurality of fins thereon. The plurality of isolation structures are respectively disposed between the plurality of fins. A top surface of the plurality of isolation structures is higher than a top surface of the plurality of fins to form a plurality of openings. The plurality of channel layers are respectively disposed in the plurality of openings. Each channel layer is in contact with a corresponding fin and extends to cover a lower sidewall of a corresponding isolation structure, thereby forming a U-shaped structure. The gate structure is filled in the plurality of openings and extends to cover the top surface of the plurality of isolation structures.

Abstract: A semiconductor structure and a method of forming the semiconductor structure are provided. The method of forming the semiconductor structure includes forming a floating gate layer on a substrate. A trench is formed in the floating gate layer and the substrate. A first dielectric layer is formed in the trench. A second dielectric layer is formed on the first dielectric layer. A third dielectric layer is formed on the second dielectric layer. A first sacrificial layer is formed on the third dielectric layer. A dielectric stack is formed on the first sacrificial layer. A control gate layer is formed on the dielectric stack. The first sacrificial layer is removed to form an air gap between the third dielectric layer and the dielectric stack.

Abstract: A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a gate structure formed over and around the nanostructures. The structure also includes a spacer layer formed over a sidewall of the gate structure over the nanostructures. The structure also includes a source/drain epitaxial structure formed adjacent to the spacer layer. The structure also includes a contact structure formed over the source/drain epitaxial structure with an air spacer formed between the spacer layer and the contact structure.