Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a gate electrode layer disposed over a substrate, a source/drain epitaxial feature disposed over the substrate, a first hard mask layer disposed over the gate electrode layer, and a contact etch stop layer (CESL) disposed over the source/drain epitaxial feature. The structure further includes a first interlayer dielectric (ILD) layer disposed on the CESL and a first treated portion of a second hard mask layer disposed on the CESL and the first ILD layer. A top surface of the first hard mask layer and a top surface of the first treated portion of the second mask layer are substantially coplanar. The structure further includes an etch stop layer disposed on the first hard mask layer and the first treated portion of the second mask layer.

Abstract: An electronic device manufacturing system configured to obtain sensor data associated with a deposition process performed in a process chamber to deposit a film stack on a surface of a substrate. The film stack can include a known film pattern and an unknown film pattern. The manufacturing system is further configured to input the sensor data into a first trained machine-learning model to obtain a first output value of the first trained machine-learning model. The first output value can be associated with the known film pattern. The manufacturing system is further configured to input the first output value into a second trained machine-learning model to obtain a second output value of the second trained machine-learning model. The second output value can be indicative of metrology data of the known film pattern.

Abstract: A method for image-guided agriculture includes receiving images; processing the images to generate reflectance maps respectively corresponding to spectral bands; synthesizing the reflectance maps to generate a multispectral image including vegetation index information of a target area; receiving crop information in regions of the target area; and assessing crop conditions for the regions based on the identified crop information and the vegetation index information.

Abstract: A three-dimensional semiconductor device includes multiple semiconductor device layers on a substrate, wherein each layer includes a first stacked structure, a first gate dielectric layer, a first semiconductor layer, a first channel layer, a first source region, a first drain region, and a first resistive random access memory cell. The first stacked structure on the substrate includes a first insulating layer and a first gate conductor layer. The first gate dielectric layer surrounds a sidewall of the first stacked structure. The first semiconductor layer surrounds a sidewall of the first gate dielectric layer. The first channel layer is in the first semiconductor layer. The first source region and the first drain region are on both sides of the first channel layer in the first semiconductor layer. The first resistive random access memory cell is on a first sidewall of the first semiconductor layer and connected to the first drain region.

Abstract: A display panel includes a first substrate, a second substrate, a liquid crystal layer, a pixel electrode, a common electrode, a first polarizer and a second polarizer. The pixel electrode includes a trunk portion, first to fourth branch portions, and first to fourth strip portions. The trunk portion extends along a first direction. The first and second branch portions are connected to a first end of the trunk portion. The third and fourth branch portions are connected to a second end of the trunk portion. The first strip portions are connected to the first and second branch portions. The second strip portions are connected to the third and fourth branch portions. The third strip portions are connected to the first and third branch portions and the trunk portion. The fourth strip portions are connected to the second and fourth branch portions and the trunk portion.

Abstract: An aquatic plant biomass-based decomposable and antibacterial plastic masterbatch composition contains: environmental biodegradable polymer materials, aquatic plant fiber materials, natural decomposable polymer, antibacterial materials, mineral fillers, Bis (2-ethylhexyl) adipate (DOA), 1,1,1-Tris Methylolpropane 1,1,1-Trimethylolpropane (TMP), and silane coupling agent. Thereby, low cost, excellent mechanical properties, release of far infrared rays and antibacterial effect are achieved.

Abstract: A semiconductor structure includes a substrate, nanostructures over the substrate, and a gate structure wrapping around the nanostructures. The gate structure includes a gate dielectric layer and a gate electrode wrapping around the gate dielectric layer. The semiconductor structure further includes a source/drain feature in contact with the nanostructures, a contact etch stop layer over the source/drain feature, and a seal layer over the air spacer and the gate structure, and on a sidewall of the contact etch stop layer. The contact etch stop layer is separated from the gate structure by an air spacer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a source/drain region formed in a semiconductor substrate, a source/drain contact structure formed over the source/drain region, and a gate electrode layer formed adjacent to the source/drain contact structure. The semiconductor device structure also includes a first spacer and a second spacer laterally and successively arranged from the sidewall of the gate electrode layer to the sidewall of the source/drain contact structure. The semiconductor device structure further includes a silicide region formed in the source/drain region. The top width of the silicide region is greater than the bottom width of the source/drain contact structure and less than the top width of the source/drain region.

Abstract: A resistive random access memory is provided. The resistive random access memory includes a bottom electrode, a metal oxide layer including a plurality of conductive filament regions formed on the bottom electrode, and a plurality of top electrodes formed on the metal oxide layer, corresponding to the respective conductive filament regions. Each of the conductive filament regions has a bottom portion and a top portion. The width of the bottom portion is greater than that of the top portion. The conductive filament regions include oxygen vacancies, and regions other than the conductive filament regions in the metal oxide layer are nitrogen-containing regions.

Abstract: A display panel includes a first substrate, a second substrate, a liquid crystal layer, a pixel electrode, a common electrode, a first polarizer and a second polarizer. The pixel electrode includes a trunk portion, first to fourth branch portions, and first to fourth strip portions. The trunk portion extends along a first direction. The first and second branch portions are connected to a first end of the trunk portion. The third and fourth branch portions are connected to a second end of the trunk portion. The first strip portions are connected to the first and second branch portions. The second strip portions are connected to the third and fourth branch portions. The third strip portions are connected to the first and third branch portions and the trunk portion. The fourth strip portions are connected to the second and fourth branch portions and the trunk portion.

Abstract: Multiple chip module (MCM) structures are described. In an embodiment, a module includes a first and second components on the top side of a module substrate, a stiffener structure mounted on the top side of the module substrate, and a lid mounted on the stiffener structure and covering the first component and the second component. The stiffener is joined to the lid within a trench formed in a roof of the lid.

Abstract: A display device includes two adjacent pixel electrodes spaced apart from each other by a gap extending in a first direction, at least one signal line extending in the first direction and having at least one protrusion at at least one side thereof, and two adjacent common electrode lines spaced apart from each other. The orthogonal projection of one/the other common electrode line on the substrate is located between the orthogonal projection of the signal line on the substrate and the orthogonal projection of one/the other pixel electrode on the substrate. Each common electrode line has a bend segment bending away from the signal line, wherein the protrusion of the at least one signal line positionally corresponds to the bend segment of each common electrode line, and the length of the protrusion is not larger than the length of the bend segment.

Abstract: A display device includes two adjacent pixel electrodes spaced apart from each other by a gap extending in a first direction, at least one signal line extending in the first direction and having at least one protrusion at at least one side thereof, and two adjacent common electrode lines spaced apart from each other. The orthogonal projection of one/the other common electrode line on the substrate is located between the orthogonal projection of the signal line on the substrate and the orthogonal projection of one/the other pixel electrode on the substrate. Each common electrode line has a bend segment bending away from the signal line, wherein the protrusion of the at least one signal line positionally corresponds to the bend segment of each common electrode line, and the length of the protrusion is not larger than the length of the bend segment.

Abstract: A semiconductor structure and a method of forming the semiconductor structure are provided. The method of forming the semiconductor structure includes forming a floating gate layer on a substrate. A trench is formed in the floating gate layer and the substrate. A first dielectric layer is formed in the trench. A second dielectric layer is formed on the first dielectric layer. A third dielectric layer is formed on the second dielectric layer. A first sacrificial layer is formed on the third dielectric layer. A dielectric stack is formed on the first sacrificial layer. A control gate layer is formed on the dielectric stack. The first sacrificial layer is removed to form an air gap between the third dielectric layer and the dielectric stack.

Abstract: A switch device includes a first node, a switch unit, an adjustment switch, an impedance element, a second node and a detection unit. A first terminal of the switch unit is coupled to the first node. A first terminal and a second terminal of the adjustment switch are respectively coupled to a second terminal of the switch unit and a reference voltage terminal. A first terminal and a second terminal of the impedance element are respectively coupled to the first terminal and the second terminal of the adjustment switch. The detection unit is coupled to the second node, and a control terminal of the switch unit and a control terminal of the adjustment switch. The detection unit detects a node signal at the second node to accordingly control the switch unit and the adjustment switch.

Abstract: An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The photo sensitive regions are in the semiconductor substrate. The dielectric layer is over a backside surface of the semiconductor substrate. The grid structure is over a backside surface of the dielectric layer. The grid structure includes a plurality of grid lines. Each of the grid lines comprises a lower portion and an upper portion forming an interface with the lower portion. The convex dielectric lenses are alternately arranged with the grid lines over the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are higher than an interface between the upper portion and the lower portion of each of the grid lines.

Abstract: A switch device includes a first node, a switch unit, an adjustment switch, an impedance element, a second node and a detection unit. A first terminal of the switch unit is coupled to the first node. A first terminal and a second terminal of the adjustment switch are respectively coupled to a second terminal of the switch unit and a reference voltage terminal. A first terminal and a second terminal of the impedance element are respectively coupled to the first terminal and the second terminal of the adjustment switch. The detection unit is coupled to the second node, and a control terminal of the switch unit and a control terminal of the adjustment switch. The detection unit detects a node signal at the second node to accordingly control the switch unit and the adjustment switch.

Abstract: A synapse system is provided which includes three transistors and a resistance-switching element arranged between two neurons. The resistance-switching element has a resistance value and it is arranged between two neurons. A first transistor is connected between the resistance-switching element and one of the neurons. A second transistor and a third transistor are arranged between the two neurons, and are connected in series which interconnects with the gate of the first transistor. A first input signal is transmitted from one of the neurons to the other neuron through the first transistor. A second input signal is transmitted from one of the neurons to the other neuron through the second transistor and the third transistor. The resistance value of the resistance-switching element is changed based on the time difference between the first input signal and the second input signal.