Abstract: A high-strength medical fiber composite material includes a sodium alginate hydrogel matrix and a fiber framework. The fiber framework is completely embedded in the sodium alginate hydrogel matrix and formed by compounding supporting layer fibers and reinforcing layer fibers. The reinforcing layer fibers are located above the supporting layer fibers. The reinforcing layer fibers and the supporting layer fibers are orthogonal to each other. According to the high-strength medical fiber composite material prepared in the present invention, the stiffness is improved by 3-4 orders of magnitude, the tensile strength is improved by 2-3 orders of magnitude, and the high-strength medical fiber composite material has high biocompatibility and safety and a great application prospect.

Abstract: The invention provides a high strength flame-retardant polyester material, which includes a PET resin, a nucleating agent, a flame retardant, an antioxidant, a rod-shaped filling and reinforcing material and a compatibilizer. The PET resin includes virgin pellets or environmentally-friendly recycled pellets, which can meet the demand for the introduction of recycled materials.

Abstract: Disclosed herein is a nanocomposite comprising a core-shell nanoparticle and a core-shell quantum dot. The core-shell nanoparticle comprises a phosphor core, a shell layer, and a cleavable peptide. The core-shell quantum dot comprises a center core, an intermediate layer, an outer layer, a silica layer, and an arginylglycylaspartic acid (RGD) peptide. The core-shell nanoparticle and the core-shell quantum dot are linked to each other via forming a peptide bond between the cleavable peptide and the RGD peptide. Also disclosed are the uses of the nanocomposite in making a diagnosis of tumors.

Abstract: An over-current protection device includes first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer includes a polymer matrix, and a conductive filler. The polymer matrix has a fluoropolymer. The total volume of the PTC material layer is calculated as 100%, and the fluoropolymer accounts for 47-62% by volume of the PTC material layer. The fluoropolymer has a melt viscosity higher than 3000 Pa·s.

Abstract: A method for a host computer to access a target device via a remote extender. The target device is connected to the remote extender, and a target device driver corresponding to the target device is installed on the host computer. The method includes setting up a logic transmission pipe between the host computer and the remote extender with a network connection as the underlying transmission path, and handling an I/O request from the target device driver to access the target device via the logic transmission pipe. The method is used to allow the target device to be treated by the host computer as a local resource. Additionally, the disclosure provides a system for accessing the remote target device and a remote extender thereof.

Abstract: Two types of blue light blocking contact lenses are provided and are formed by curing different compositions. The first composition includes a blue light blocking component formed by mixing or reacting a first hydrophilic monomer and a yellow dye, a first colored dye component formed by mixing or reacting a second hydrophilic monomer and a first colored dye, at least one third hydrophilic monomer, a crosslinker, and an initiator. The first colored dye includes a green dye, a cyan dye, a blue dye, an orange dye, a red dye, a black dye, or combinations thereof. The second composition includes a blue light blocking component, at least one hydrophilic monomer, a crosslinker, and an initiator. The blue light blocking component is formed by mixing or reacting glycerol monomethacrylate and a yellow dye. Further, methods for preparing the above contact lenses are provided.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a polymer matrix and a first conductive filler. The polymer matrix includes a polyolefin-based polymer and a fluoropolymer. The fluoropolymer has a melt flow index higher than 1.9 g/10 min, and the polyolefin-based polymer and the fluoropolymer together form an interpenetrating polymer network (IPN). The first conductive filler has a metal-ceramic compound dispersed in the polymer matrix.

Abstract: An antibacterial and antifungal polyester material is provided, which includes a polyester resin substrate material and a plurality of functional polyester master-batches. The functional polyester master-batches are dispersed in the polyester resin substrate material. Each of the functional polyester master-batches includes a polyester resin matrix material and an antibacterial and antifungal additive. The antibacterial and antifungal additive includes a plurality of glass beads. The glass beads are dispersed in the polyester resin matrix material, and a plurality of silver nanoparticles are distributed on an outer surface of each of the glass beads.

Abstract: A photonic integrated circuit structure includes a substrate, a waveguide structure and a spot size converter. The waveguide structure is disposed over a surface of the substrate and has a receiving end. The spot size converter includes a concave mirror and a curved mirror. The concave mirror and the curved mirror are opposite to each other and have a common focus. The concave mirror is arranged to reflect a parallel beam from a transmitting end such that a first reflected beam is able to converge at the common focus, and the curved mirror is arranged to reflect the first reflected beam such that a second reflected beam is directed parallel to the receiving end of the waveguide structure.

Abstract: A device is provided. The device includes a physical unclonable function (PUF) cell array. The PUF cell array includes multiple bit cells, and generates a PUF response output, in response to a challenge input, based on a data state of one bit cell in the bit cells. Each of the bit cells stores a bit data and includes a transistor having a control terminal coupled to a word line and a first terminal coupled to a source line, a first memory cell having a first terminal coupled to a first data line and a second terminal coupled to a second terminal of the transistor, and a second memory cell having a first terminal coupled to a second data line, different from the first data line, and a second terminal coupled to the second terminal of the first memory cell at the second terminal of the transistor.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 48% to 55%. The conductive filler has a metal-ceramic compound.

Abstract: A photonic integrated circuit structure includes a substrate, a waveguide structure and a spot size converter. The waveguide structure is disposed over a surface of the substrate and has a receiving end. The spot size converter includes a concave mirror and a curved mirror. The concave mirror and the curved mirror are opposite to each other and have a common focus. The concave mirror is arranged to reflect a parallel beam from a transmitting end such that a first reflected beam is able to converge at the common focus, and the curved mirror is arranged to reflect the first reflected beam such that a second reflected beam is directed parallel to the receiving end of the waveguide structure.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 33% to 42%.

Abstract: The disclosure provides a polyester composite board structure and a manufacturing method thereof. The manufacturing method includes extruding a polyester layer into a board using a multi-layer extrusion equipment, and laminating a polyester film by heat using a wheel during an extrusion process.

Abstract: A method for forming a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices, each integrated circuit device extending into the semiconductor wafer to a first depth, and grinding a backside of the silicon wafer to no more than the first depth. The method further includes forming a backside cut between the integrated circuit devices. The backside cut extends to within the first depth, but the backside cut does not extend completely through the semiconductor wafer. The backside cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on the backside of the wafer, a metallization layer on a bottom surface of the integrated circuit devices and on the edges.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: A waste collection apparatus for collecting waste in water is provided. The waste collection apparatus includes a floating device and a waste collection device coupled to the floating device. The waste collection device includes a fluid ejection element, and the flow out of the fluid ejection element flows toward a space where waste is collected.

Abstract: A waste collection apparatus for collecting waste in water is provided. The waste collection apparatus includes a floating device and a waste collection device coupled to the floating device. The floating device includes a plurality of floating units. The waste collection device is coupled to the floating device. Each of the floating units includes a base and a pillar connected to the base, and the density of the base is greater than the density of the pillar.

Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.