Abstract: A method of fabricating an image sensor on a semiconductor substrate including a sensor array region is introduced. First, an R/G/B color filter array (CFA) is formed on portions of the semiconductor substrate corresponding to the sensor array region. Then, a spacer layer is formed on the R/G/B CFA, and a plurality of U-lens is formed on the spacer layer corresponding to the R/G/B CFA. Afterwards, a buffer layer is coated to fill a space between the U-lens, and a low-temperature passivation layer is deposited on the buffer layer and the U-lens at a temperature of about 300° C. or less to prevent the R/G/B CFA from damage.

Abstract: A fabrication method for a CMOS image sensory device is described. An isolation layer is formed in the substrate to isolate a photodiode sensory region and a transistor device region. A gate structure is further formed on the transistor device region, followed by forming concurrently a source/drain region in the transistor device region beside the side of the gate structure and a doped region in the photodiode sensory region. Thereafter, a self-aligned block is formed on the photodiode sensory region, followed by forming a protective layer on the substrate.

Abstract: A lighting assembly includes a tubular cover and a longitudinal open bottom is defined through the cover. A bottom plate is slidably connected to the open bottom of the cover and a plurality of reinforcement ribs extend from an inner side of the cover. Two groove are defined in the reinforcement ribs and two bulbs are slidably engaged with the grooves. An electrical piece is connected to a first end of the cover and electrically connected to the bulbs. An end cap is connected to a second end of the cover.

Abstract: A image sensor device is formed on a semiconductor wafer comprising a silicon substrate of a first conductive type. The image sensor device includes a photo sensor, an insulation layer, a MOS transistor and a deep doped region. The photo sensor is composed of a shallow doped region of a second conductive type. The shallow doped region is formed on a surface of the substrate and has a first predetermined depth. The insulation layer has a second predetermined depth and is positioned on the surface of the substrate to surround the photo sensor. The second predetermined depth is greater than the first predetermined depth. The MOS transistor is formed on the semiconductor wafer and electrically connected with the photo sensor. The deep doped region of the first conductive type is formed in the substrate under the insulation layer, and a dopant concentration of the deep doped region has a Gauss distribution.

Abstract: This invention mainly provides a structure of high filtering precision optical signal interleaver. Herein the birefringent crystal is designed to lead the incident light having a suitable phase-delay and multi-pass to achieve a flattened filtering spectrum and to reduce the filtering spectrum error caused by unmatched component crystal length. Moreover, this invention will eliminate the element number and shorten the element length concurrently.

Abstract: This specification discloses a reflective optical circulator, which uses an optical reflective device to reflect an incident light beam from an optical port so that the reflected light beams further pass through all optical devices (i.e., all sorts of optical crystals) on the optical paths. With a proper reciprocal-non-reciprocal optical crystal combination, a particular linear polarization direction is generated to guide the reflected beams to the next optical port. The invention achieves the effect of repeatedly using crystals, lowering the number of crystals and the length of the optical circulator. On the other hand, all optical ports can be installed on the same side of the optical circulator, minimizing the device and making it easy to use.

Abstract: A plurality of active pixel sensors are formed on the surface of a semiconductor wafer. The semiconductor wafer comprises a P-type substrate, an active pixel sensor region and a periphery circuit region. A first active pixel sensor block mask (APSB mask) is formed to cover the active pixel sensor region, then at least one N-well on the surface of the semiconductor wafer not covered by the first APSB mask is formed. A second APSB mask and at least one N-well mask are formed to cover the active pixel sensor region and the region outside the P-well region. At least one P-well on the surface of the semiconductor wafer not covered by the second APSB mask and the N-well mask is formed. Finally, at least one photodiode and at least one complementary metal-oxide semiconductor (CMOS) transistor are formed on the surface of the active pixel sensor region.

Abstract: A multi-port optical isolator includes a plurality of optical input/output ports formed on one side of the isolator, a polarization splitter/combiner, a non-reciprocal polarization rotator module and a non-reciprocal reflector. Light beams entering the input ports can be guided to corresponding output ports while noise beams traveling in reverse direction can be blocked. By using reflective elements for managing the beam path, the length of the isolator can be greatly reduced, and multiple unitary isolators can be built in an isolator with a similar size to that of common single port isolators.

Abstract: A plurality of active pixel sensors are formed on the surface of a semiconductor wafer. The semiconductor wafer comprises a P-type substrate, an active pixel sensor region and a periphery circuit region. A first active pixel sensor block mask (APSB mask) is formed to cover the active pixel sensor region, then at least one N-well on the surface of the semiconductor wafer not covered by the first APSB mask is formed. A second APSB mask and at least one N-well mask are formed to cover the active pixel sensor region and the region outside the P-well region. At least one P-well on the surface of the semiconductor wafer not covered by the second APSB mask and the N-well mask is formed. Finally, at least one photodiode and at least one complementary metal-oxide semiconductor (CMOS) transistor are formed on the surface of the active pixel sensor region.

Abstract: A method of fabricating CMOS image sensor. On a substrate, an isolation layer is formed to partition the substrate into a photodiode sensing region and a transistor element region. Next, on the transistor element region, a gate electrode structure is formed and then, a source/drain region is formed at the transistor element region of the two lateral sides of the gate electrode structure. At the same time, a doping region is formed on the photodiode sensing region. After that, a self-aligned barrier layer is formed on the photodiode sensing region and a protective layer is formed on the substrate. Then, a dielectric layer and a metallic conductive wire are successively formed on the protective layer. Again, a protective layer is formed on the dielectric layer and the metallic conductive wire, wherein the numbers of the dielectric layers and the metallic conductive wire depend on the fabrication process. A protective layer is formed between every dielectric layer.

Abstract: A method of fabricating CMOS image sensor. On a substrate, an isolation layer is formed to partition the substrate into a photodiode sensing region and a transistor element region. Next, on the transistor element region, a gate electrode structure is formed and then, a source/drain region is formed at the transistor element region of the two lateral sides of the gate electrode structure. At the same time, a doping region is formed on the photodiode sensing region. After that, a self-aligned barrier layer is formed on the photodiode sensing region and a protective layer is formed on the substrate. Then, a dielectric layer and a metallic conductive wire are successively formed on the protective layer. Again, a protective layer is formed on the dielectric layer and the metallic conductive wire, wherein the numbers of the dielectric layers and the metallic conductive wire depend on the fabrication process. A protective layer is formed between every dielectric layer.

Abstract: A structure of a CMOS image sensory device is described. A photodiode sensory region and a transistor device region are isolated from each other by an isolation layer formed in the substrate. A gate structure is located on the transistor device region, and a source/drain region is in the transistor device region beside the side of the gate structure. A doped region is in the photodiode sensory region. A self-aligned block is located on the photodiode sensory region and a protective layer is formed on the entire substrate.

Abstract: A fabrication method for a CMOS image sensory device is described. An isolation layer is formed in the substrate to isolate a photodiode sensory region and a transistor device region. A gate structure is further formed on the transistor device region, followed by forming concurrently a source/drain region in the transistor device region beside the side of the gate structure and a doped region in the photodiode sensory region. Thereafter, a self-aligned block is formed on the photodiode sensory region, followed by forming a protective layer on the substrate.

Abstract: A method of fabricating CMOS image sensor. On a substrate, an isolation layer is formed to partition the substrate into a photodiode sensing region and a transistor element region. Next, on the transistor element region, a gate electrode structure is formed and then, a source/drain region is formed at the transistor element region of the two lateral sides of the gate electrode structure. At the same time, a doping region is formed on the photodiode sensing region. After that, a self-aligned barrier layer is formed on the photodiode sensing region and a protective layer is formed on the substrate. Then, a dielectric layer and a metallic conductive wire are successively formed on the protective layer. Again, a protective layer is formed on the dielectric layer and the metallic conductive wire, wherein the numbers of the dielectric layers and the metallic conductive wire depend on the fabrication process. A protective layer is formed between every dielectric layer.

Abstract: A method of fabricating CMOS image sensor. On a substrate, an isolation layer is formed to partition the substrate into a photodiode sensing region and a transistor element region. Next, on the transistor element region, a gate electrode structure is formed and then, a source/drain region is formed at the transistor element region of the two lateral sides of the gate electrode structure. At the same time, a doping region is formed on the photodiode sensing region. After that, a self-aligned barrier layer is formed on the photodiode sensing region and a protective layer is formed on the substrate. Then, a dielectric layer and a metallic conductive wire are successively formed on the protective layer. Again, a protective layer is formed on the dielectric layer and the metallic conductive wire, wherein the numbers of the dielectric layers and the metallic conductive wire depend on the fabrication process. A protective layer is formed between every dielectric layer.

Abstract: This specification discloses a light signal interleaver, which can separate a light signal into two light signals with a large interval in between. A birefringent plate is used as a light signal interleaver to separate all wavelengths in a light signal into an O-ray and an E-ray. Therefore, the invention can increase the total transmission capacity under the existent network structure.

Abstract: The present invention is a method for integrating an anti-reflection layer and a salicide block. The method comprises the following steps: A substrate is provided that is divided into at least a sensor area and a transistor area, wherein the sensor area comprises a doped region and the transistor area comprises a transistor that includes a gate, a source and a drain; forming a composite layer on the substrate, wherein the composite layer at least also covers both the sensor area and the transistor area, and the composite layer increases the refractive index of light that propagates from the doped region into the composite layer; performing an etching process and a photolithography process to remove part of the composite layer and to let top of the gate, the source and the drain are not covered by the composite layer; and performing a salicide process to let top of the gate, the source and the drain are covered by a silicate.

Abstract: The invention provides a compact optical circulator with three ports positioning between a dual-core collimator and a single-core collimator. The inventive circulator has a propagation director to couple a light from the dual-core collimator to one port of the circulator and another light form the other port of the circulator to the dual-core collimator. The invention further provides a compact optical circulator with three ports having a reflective compensator. The reflective compensator compensates the optical path length of two polarized beams. Furthermore, the invention eliminates the polarization mode dispersion by utilizing a reflective compensator. As well, the inventive circulator forgoes use of the reciprocal polarizing-rotating unit, thus reducing production costs.

Abstract: The invention provides a compact optical circulator with three ports positioning between a dual-core collimator and a single-core collimator. The inventive circulator has a propagation director to couple a light from the dual-core collimator to one port of the circulator and another light form the other port of the circulator to the dual-core collimator. The invention further provides a compact optical circulator with three ports having a reflective compensator. The reflective compensator compensates the optical path length of two polarized beams. Furthermore, the invention eliminates the polarization mode dispersion by utilizing a reflective compensator. As well, the inventive circulator forgoes use of the reciprocal polarizing-rotating unit, thus reducing production costs.

Abstract: This specification discloses a reflective optical circulator, which uses an optical reflective device to reflect an incident light beam from an optical port so that the reflected light beams further pass through all optical devices (i.e., all sorts of optical crystals) on the optical paths. With a proper reciprocal-non-reciprocal optical crystal combination, a particular linear polarization direction is generated to guide the reflected beams to the next optical port. The invention achieves the effect of repeatedly using crystals, lowering the number of crystals and the length of the optical circulator. On the other hand, all optical ports can be installed on the same side of the optical circulator, minimizing the device and making it easy to use.