Abstract: A light-emitting device includes: a first light-emitting unit with a chromaticity coordinate x ranging from 0.53 to 0.6, and a chromaticity point located proximate to a blackbody radiation curve; a second light-emitting unit with a chromaticity coordinate x ranging from 0.4 to 0.48, and a chromaticity point located above the blackbody radiation curve; and a third light-emitting unit with a chromaticity coordinate x ranging from 0.18 to 0.24, and a chromaticity point located above the blackbody radiation curve. An area surrounded by the chromaticity points of the first light-emitting unit, the second light-emitting unit and the third light-emitting unit covers an area on the blackbody radiation curve with a CCT range of 1800 K to 10000 K, which can achieve a wide-range CCT tuning, and make CIExy coordinates fit the blackbody radiation curve to tune a product during the tuning process.

Abstract: A light-emitting device includes a first light source, a second light source, a shunt, and a third light source. The second light source is connected in series with the first light source, and the second and first light sources form a first branch. The shunt is connected in parallel with the second light source and connected in series with the first light source. The third light source is connected in parallel with the first branch, and a color temperature of the third light source is greater than that of the first light source and the second light source. By setting the first, third, and second light source to light up sequentially in that order, making the color temperature of the light-emitting device as a whole gradually shift from the color temperature of the first light source to that of the third light source, thereby presenting a color temperature gradient process.

Abstract: An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a substrate, light emitting chips disposed on the substrate and electrically connected to the substrate, a first annular structure disposed on the substrate and around the light emitting chips, a first wavelength conversion layer disposed in the first annular structure and covering the light emitting chips, a second annular structure disposed on the substrate and around the light emitting chips and further being in contact with the first annular structure, and a second wavelength conversion layer disposed in the second annular structure and covering the first wavelength conversion layer and the light emitting chips. Wavelength conversion substances contained in the first wavelength conversion layer and the second wavelength conversion layer respectively are different in material. Therefore, the optoelectronic device can achieve improved uniformity of luminescence as well as light output quality.

Abstract: A chip-on-board type photoelectric device exemplarily includes: a package substrate, provided with a chip mounting region, a first electrode and a second electrode, the first and second electrodes being arranged spaced from each other at a periphery of the chip mounting region; first photoelectric chips, arranged in the chip mounting region to form inwardly concave strip-shaped patterns as mutually spaced first color temperature regions, and electrically connected between the first and second electrodes to form at least one first photoelectric chip string; and second photoelectric chips, arranged in the chip mounting region to form second color temperature regions. A light-emitting color temperature of each the second color temperature region is higher than that of each the first color temperature region. The second photoelectric chips are electrically connected between the first and second electrodes to form second photoelectric chip strings. A good uniformity of light mixing can be achieved.

Abstract: A chip-on-board type photoelectric device exemplarily includes: a package substrate, provided with a chip mounting region, a first electrode and a second electrode, the first and second electrodes being arranged spaced from each other at a periphery of the chip mounting region; first photoelectric chips, arranged in the chip mounting region to form inwardly concave strip-shaped patterns as mutually spaced first color temperature regions, and electrically connected between the first and second electrodes to form at least one first photoelectric chip string; and second photoelectric chips, arranged in the chip mounting region to form second color temperature regions. A light-emitting color temperature of each the second color temperature region is higher than that of each the first color temperature region. The second photoelectric chips are electrically connected between the first and second electrodes to form second photoelectric chip strings. A good uniformity of light mixing can be achieved.

Abstract: A semiconductor structure includes a substrate, a shallow trench isolation (STI) structure, a first gate structure, a second gate structure, a first contact, and a second gate contact. The substrate has an active region. The STI structure is disposed in the substrate and adjacent to the active region. The first gate structure and the second gate structure is disposed on the active region, wherein a vertical projection region of the first gate structure on the substrate and a vertical projection region of the second gate structure on the substrate are spaced apart from the STI structure. The first contact and the second contact are respectively disposed on the first gate structure and the second gate structure.

Abstract: An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a substrate, light emitting chips disposed on the substrate and electrically connected to the substrate, a first annular structure disposed on the substrate and around the light emitting chips, a first wavelength conversion layer disposed in the first annular structure and covering the light emitting chips, a second annular structure disposed on the substrate and around the light emitting chips and further being in contact with the first annular structure, and a second wavelength conversion layer disposed in the second annular structure and covering the first wavelength conversion layer and the light emitting chips. Wavelength conversion substances contained in the first wavelength conversion layer and the second wavelength conversion layer respectively are different in material. Therefore, the optoelectronic device can achieve improved uniformity of luminescence as well as light output quality.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate, a diffusion barrier layer, a passivation layer, and a plurality of conductive features. The diffusion barrier layer is disposed on the substrate, and the passivation layer is disposed on the diffusion barrier layer. The conductive features penetrate through the passivation layer and contact the diffusion barrier layer.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate, a diffusion barrier layer, a passivation layer, and a plurality of conductive features. The diffusion barrier layer is disposed on the substrate, and the passivation layer is disposed on the diffusion barrier layer. The conductive features penetrate through the passivation layer and contact the diffusion barrier layer.