Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate. A first gate structure and a second gate structure are across the first and second fins, respectively. An insulating structure is formed between the first gate structure and the second gate structure and includes a first insulating layer separating the first fin from the second fin, a capping structure formed in the first insulating layer, and a second insulating layer covered by the first insulating layer and the capping structure.

Abstract: The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.

Abstract: A light-emitting package includes an encapsulating member, a plurality of light-emitting components disposed in the encapsulating member, a plurality of first electrode pads, a plurality of second electrode pads, and a plurality of conductive connection structures. The encapsulating member has a first surface and a second surface opposite to each other. Each light-emitting component has a light-emitting surface exposed on the first surface. Both the first electrode pads and the second electrode pads are exposed on the second surface. A first bonding surface of each first electrode pad and a second bonding surface of each second electrode pad are both flush with the second surface. The light-emitting components disposed on the first electrode pads are electrically connected to the first electrode pads. The conductive connection structures passing through the encapsulating member are electrically connected to the light-emitting components and the second electrode pads.

Abstract: An insertion device includes a cover body, an insertion module. The insertion module is disposed in the cover body, and includes a main body, an insertion seat, a first elastic member, a retraction seat and a second elastic member. When the cover body is depressed, the insertion seat is driven by the first elastic member to perform an automatic-insertion operation and to collapse a limiting structure between the insertion seat and the cover body. A limiting structure between the insertion seat and the retraction seat collapses upon the collapse of the limiting structure between the insertion seat and the cover body, so that the retraction seat is driven by the second elastic member to perform an automatic-retraction operation.

Abstract: The present disclosure provides semiconductor structure having an electrical contact. The semiconductor structure includes a semiconductor substrate and a doped polysilicon contact. The doped polysilicon contact is disposed over the semiconductor substrate. The doped polysilicon contact includes a dopant material having a dopant concentration equaling or exceeding about 1015 atom/cm3.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure having an electrical contact. The method includes providing a semiconductor substrate; forming a dielectric structure over the semiconductor substrate, the dielectric structure having a trench; filling a polysilicon material in the trench of the dielectric structure; detecting the polysilicon material to determine a region of the polysilicon material having one or more defects formed therein; implanting the polysilicon material with a dopant material into the region; and annealing the polysilicon material to form a doped polysilicon contact.

Abstract: A backlight assembly includes a reflection sheet, a light-shielding sheet, two light-emitting elements, and a light guide plate. The reflection sheet is disposed on a circuit board and has two through holes. The light-shielding sheet is disposed on the reflection sheet and has a hollow portion having a closed contour. The light-emitting elements are disposed on the circuit board, respectively accommodated in the through holes, and located in the hollow portion. The light guide plate is embedded in the hollow portion and includes two light guide regions. Each of the light guide regions has a light mixing region and a light outputting region. A corresponding one of the light-emitting elements and the light outputting region are respectively located on opposite sides of the first light mixing region. The light-shielding sheet further has a light blocking portion disposed between the light guide regions.

Abstract: A data storage device includes multiple storage modules. Each storage module includes a storage which having a memory device and a first memory controller and a second memory controller. The first memory controller is coupled to the memory device for accessing the memory device. The second memory controller is coupled to the storage for accessing the storage. The first memory controller includes a first transmission interface. The second memory controller includes a second transmission interface. The first memory controller and the second memory controller communicate with each other through the first transmission interface and the second transmission interface.

Abstract: A light-emitting diode package includes a redistribution layer, a light-emitting diode, a first dielectric layer, a plurality of wavelength conversion structures, and a transparent encapsulant. The light-emitting diode is disposed on and electrically connected to the redistribution layer. The light-emitting diode includes a first light-emitting diode, a second light-emitting diode, and a third light-emitting diode. The first dielectric layer is disposed on the redistribution layer and covers the light-emitting diode. The wavelength conversion structures are disposed on the first dielectric layer and respectively in contact with the second light-emitting diode and the third light-emitting diode. The transparent encapsulant is disposed on the first dielectric layer and covers the plurality of wavelength conversion structures. In addition, a manufacturing method of the light-emitting diode package is provided.

Abstract: A bridge device includes a first controller and a second controller. The first controller includes a first transmission interface. The second controller is coupled to the first controller and includes a second transmission interface coupled to the first transmission interface. The first transmission interface and the second transmission interface are both flash memory interface.

Abstract: The present disclosure provides a battery detection device. The detection circuit is disposed on the battery and produces an impedance value variation quantity according to a deformation of the battery. The detection circuit includes four connection nodes. The first connection node and the third connection node are connected with the battery. A voltage variation quantity is produced between the second connection node and the fourth connection node according to the impedance value variation quantity. The protection circuit is connected with the second connection node and the fourth connection node. The protection circuit is in an ON state when the voltage variation quantity is greater than or equal to a cut-off voltage. The protection circuit is in an OFF state when the voltage variation quantity is less than the cut-off voltage, so that an operation state of the battery is changed accordingly.

Abstract: The present disclosure relates to a memory device that includes a substrate and source and drain regions formed in the substrate. The memory device includes a gate dielectric formed on the substrate and between the source and drain regions. The memory device also includes a gate structure formed on the gate dielectric and the gate structure has a planar top surface. The memory device further includes a multi-spacer structure that includes first, second, and third spacers. The first spacer is formed on a sidewall of the gate structure and a top surface of one of the source and drain regions. The second spacer is formed on a sidewall of the first spacer and the second spacer has a dielectric constant greater than a dielectric constant of the first spacer. The third spacer is formed on a sidewall of the second spacer and a horizontal surface of the first spacer.

Abstract: A method for assembling a physiological signal monitoring apparatus on a body surface of a living body is provided, wherein the physiological signal monitoring apparatus is used to measure a physiological signal and includes a sensor module and a transmitter. The method comprises steps of: (a) detaching the bottom cover from the housing to expose the sticker from the bottom opening; (b) while holding the housing, causing the adhesive pad to be attached to the body surface; (c) applying a pressing force on the housing to cause the sensor module to be detached from the implantation module and the signal sensing end to be implanted under the body surface; (d) removing the implanting device while leaving the sensor module on the body surface; and (e) placing the transmitter on the base so that the signal output end is electrically connected to the port.

Abstract: A light-emitting device includes a main body, a light guide plate, and a flexible circuit board. The main body includes a light exit wall and a side wall connected and bent relative to each other. The light exit wall and the side wall together form a groove. The light guide plate has a light exit region and a light mixing region. Microstructures are disposed on the light exit region. At least a part of the light exit region is engaged in the groove. The flexible circuit board has a light-emitting unit. The light-emitting unit is configured to emit light toward a side surface of the light mixing region. The light enters the light guide plate from the side surface of the light mixing region and is totally reflected in the light mixing region, and then is guided to the light exit wall through the microstructures.

Abstract: A method for forming resistance on circuit board is provided and includes the following steps. First, a substrate is provided. Next, a second metal layer is provided on the substrate, and the first metal layer is covered by the second metal layer. Then, a resistance is formed on the second metal layer, and the resistance is directly above the first metal layer. Thereafter, the second metal layer is cut so that the edge of the second metal layer is aligned with that of the first metal layer. The second metal layer is separated from the first metal layer. Next, the second metal layer is pressed with a circuit board, and the resistance is attached to a dielectric layer of the circuit board. Then, the second metal layer is etched to form a circuit pattern on the resistance.

Abstract: The disclosure provides a display panel including a first substrate, multiple scan lines, multiple data lines, and multiple pixel structures. The scan lines and the data lines are disposed on the first substrate and intersect each other. One of the pixel structures includes an active element, a pixel electrode, a capacitor electrode, a common electrode, and a repair pattern. The active element includes a source, a drain, and a gate. The gate is electrically connected to one of the scan lines. The source is electrically connected to one of the data lines. The pixel electrode is electrically connected to the drain of the active element. The capacitor electrode is electrically connected to the pixel electrode and extends from the drain. The common electrode overlaps the pixel electrode and the capacitor electrode. The repair pattern overlaps one of the scan lines as well as the common electrode, and the pixel electrode.

Abstract: An optical integrated circuit (IC) structure includes: a substrate including a fiber slot formed in an upper surface of the substrate and extending from an edge of the substrate, and an undercut formed in the upper surface and extending from the fiber slot; a semiconductor layer disposed on the substrate; a dielectric structure disposed on the semiconductor layer; an interconnect structure disposed in the dielectric structure; a plurality of vents that extend through a coupling region of the dielectric structure and expose the undercut; a fiber cavity that extends through the coupling region of dielectric structure and exposes the fiber slot; and a barrier ring disposed in the dielectric structure, the barrier ring surrounding the interconnect structure and routed around the perimeter of the coupling region.

Abstract: A coupling system includes an optical fiber configured to carry an optical signal. The coupling system further includes a chip in optical communication with the optical fiber. The chip includes a substrate. The chip further includes a grating on a first side of the substrate, wherein the grating is configured to receive the optical signal. The chip further includes an interconnect structure over the grating on the first side of the substrate, wherein the interconnect structure defines a cavity aligned with the grating. The chip further includes a first polysilicon layer on a second side of the substrate, wherein the second side of the substrate is opposite to the first side of the substrate.

Abstract: A system and method for generating a gas curtain over an access port of a processing chamber for a semiconductor substrate. A gas flow stabilizer and a gas flow receiver, each including a horizontal flow section and a vertical flow section cooperate to generate a gas curtain that impedes gas, e.g., oxygen, from outside the processing chamber, from flowing into the chamber, for example, when the access port is opened to add/or to remove a workpiece from the processing chamber.

Abstract: A photonic device includes a silicon layer, wherein the silicon layer extends from a waveguide region of the photonic device to a device region of the photonic device, and the silicon layer includes a waveguide portion in the waveguide region. The photonic device further includes a cladding layer over the waveguide portion, wherein the device region is free of the cladding layer. The photonic device further includes a low refractive index layer in direct contact with the cladding layer, wherein the low refractive index layer comprises silicon oxide, silicon carbide, silicon oxynitride, silicon carbon oxynitride, aluminum oxide or hafnium oxide. The photonic device further includes an interconnect structure over the low refractive index layer.