Abstract: In a method of manufacturing a semiconductor device, an isolation structure is formed in a substrate defining an active region, a first gate structure is formed over the isolation structure and a second gate structure over the active region adjacent to the first gate structure, a cover layer is formed to cover the first gate structure and a part of the active region between the first gate structure and the second gate structure, the active region between the first gate structure and the second gate structure not covered by the cover layer is etched to form a recess, and an epitaxial semiconductor layer is formed in the recess.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: A photomask structure having a first region and a second region is provided. The layout pattern density of the first region is smaller than the layout pattern density of the second region. The photomask structure includes a first layout pattern, a second layout pattern, and first assist patterns. The first layout pattern is located in the first region and the second region. The second layout pattern is located in the second region. The second layout pattern is located on one side of the first layout pattern. The first assist patterns are located on the first sidewall of the first layout pattern and separated from each other. The first sidewall is adjacent to the second layout pattern. The first assist patterns are adjacent to a boundary between the first region and the second region. The lengths of two adjacent first assist patterns decrease in the direction away from the boundary.

Abstract: The present disclosure provides a method and device for intelligent control of heating furnace combustion based on a big data cloud platform, which relates to the technical field of artificial intelligence control. The method includes: construction of big data cloud platform based on production and operation parameters of the heating furnace; identification of key factors in the production process of the heating furnace by using big data mining technology; independent deployment of traditional heating furnace combustion control systems based on the mechanism model; and integration of cloud platform big data expert knowledge base and the heating furnace combustion intelligent control system.

Abstract: A method includes encapsulating a first device die and a second device die in an encapsulant, and forming an interconnect structure over and electrically connecting to the first device die and the second device die. A waveguide is formed in the interconnect structure. An optical-engine based interconnect component is bonded to the interconnect structure. The optical-engine based interconnect component forms a part of a signal path that connects the first device die to the second device die.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A method for forming a chip package structure. The method includes bonding first connectors over a front surface of a semiconductor wafer. The method also includes dicing the semiconductor wafer from a rear surface of the semiconductor wafer to form semiconductor dies and mounting first and second semiconductor dies in the semiconductor dies over a top surface of the interposer substrate. The method further forming an encapsulating layer over the top surface of the interposer substrate to cover the first semiconductor die and the second semiconductor die. A first sidewall of the first semiconductor die faces a second sidewall of the second semiconductor die, and upper portions of the first sidewall and the second sidewall have a tapered contour, to define a top die-to-die distance and a bottom die-to-die distance that is less than the top die-to-die distance.

Abstract: A wireless communication method and apparatus for handling radio resource collision are provided. The wireless communication method includes receiving a Radio Resource Control (RRC) configuration indicating a first Control Resource Set (CORESET) pool index associated with a Physical Uplink Control Channel (PUCCH) designated to carry Uplink Control Information (UCI); determining whether the PUCCH overlaps one or more Physical Uplink Shared Channels (PUSCHs) in time domain; after determining that the PUCCH overlaps at least one of the one or more PUSCHs in the time domain, multiplexing the UCI on a particular PUSCH of the one or more PUSCHs that is associated with the first CORESET pool index; and transmitting the UCI via the particular PUSCH.

Abstract: A semiconductor structure includes a first dielectric layer, a first die, a second die, a first molding, and a second molding. The first die is disposed under the first dielectric layer, and has a first surface facing the first dielectric layer and a second surface opposite to the first surface. The second die is disposed over the first dielectric layer, and has a third surface facing the first dielectric layer and a fourth surface opposite to the third surface. The first molding encapsulates the first die. The second molding is disposed over the first die and the first dielectric layer. The first surface of the first die and the third surface of the second die are in contact with the first dielectric layer. The fourth surface of the second die is partially exposed through the second molding and partially covered by the second molding.

Abstract: A method includes forming a semiconductor fin on a substrate; forming a dielectric layer over the semiconductor fin; forming a metal gate electrode in the dielectric layer and extending across the semiconductor fin; forming a source/drain regions on the semiconductor fin and on opposite sides of the metal gate electrode; performing a first non-zero bias plasma etching process to the metal gate electrode; after performing the first non-zero bias plasma etching process, performing a first zero bias plasma etching process to the metal gate electrode.

Abstract: A button mechanism includes a button, a module, and a thin sheet spring. The thin sheet spring is in physical communication with the button and with the module. The thin sheet spring exerts a tension force on the button and the module to bias the button toward a normal position. In response to a force greater than the tension force being exerted on the button, a portion of the thin sheet stretches to enable the button to be placed in a contact position. In response to the force being removed from the button, the tension force causes the thin sheet to snap back to an original position and biases the button toward the normal position.

Abstract: Provided are a database processing method and apparatus, and a computer readable storage medium. The database processing method comprises: after a lock wait is generated, writing lock wait related information into a lock wait log.

Abstract: A server includes a casing, a storage device, and a storage device frame assembly. The casing includes a first side plate. The storage device frame assembly includes a support frame and a handle. The support frame accommodates the storage device and is removably mounted on the first side plate. The handle includes a pivotable component and a slidable component. The pivotable component is pivotably disposed on the support frame. The slidable component is slidably disposed on the pivotable component. The slidable component is slidable between a first position and a predetermined position relative to the pivotable component, a longitudinal axis of the slidable component in the first position is non-parallel to the longitudinal axis of the slidable component in the predetermined position.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.

Abstract: An antenna module is provided. The antenna module includes a dielectric substrate, a radio frequency integrated circuit (RFIC) and a first number of first antennas. The radio frequency integrated circuit (RFIC) is disposed on the dielectric substrate, wherein the RFIC comprises a single first antenna port group and second antenna port groups to receive or transmit signals. The first number of first antennas is arranged in a first row on the dielectric substrate, wherein at least two of the first antennas are connected to the first antenna port group of the RFIC.

Abstract: Methods, systems, and apparatuses for image segmentation are provided. For example, a computing device may obtain an image, and may apply a process to the image to generate input image feature data and input image segmentation data. Further, the computing device may obtain reference image feature data and reference image classification data for a plurality of reference images. The computing device may generate reference image segmentation data based on the reference image feature data, the reference image classification data, and the input image feature data. The computing device may further blend the input image segmentation data and the reference image segmentation data to generate blended image segmentation data. The computing device may store the blended image segmentation data within a data repository. In some examples, the computing device provides the blended image segmentation data for display.

Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.