Abstract: A cosmeticizing pen includes a sleeve a guider mounted in the sleeve. Two shanks respectively longitudinally mounted to two opposite end of the guider and two drive devices respectively mounted in the two shanks. The sleeve is selectively connected to a corresponding one of the two drives to squeeze out the cosmetic in the shank that contains the corresponding drive device.

Abstract: A cosmeticizing pen includes a sleeve a guider mounted in the sleeve. Two shanks respectively longitudinally mounted to two opposite end of the guider and two drive devices respectively mounted in the two shanks. The sleeve is selectively connected to a corresponding one of the two drives to squeeze out the cosmetic in the shank that contains the corresponding drive device.

Abstract: A cosmeticizing pen includes a sleeve and a guider partially received in the sleeve. A first cylinder and a second cylinder respectively longitudinally mounted to two opposite ends of the guider for containing two different cosmetics. A first head and a second head are respectively mounted to a free end of each of the first cylinder and the second cylinder. A first cap and a second cap are respectively mounted to the first head and the second head for protect the first head and the second head after use.

Abstract: The present invention is directed to a method for inhibiting expression of either iNOS or COX-2, or both in mammals using flavone compounds, and pharmaceutically acceptable salts thereof. The present invention is also directed to a method of activating K+ channels in mammals; as well as methods for treating septic shock, for inhibiting expression of angiotensin converting enzyme, for treating or preventing aneurysms and for reducing inflammation and related pathological changes using these compounds. Presently preferred compounds are oroxylin A (5,7-dihydroxy-6-methoxy flavone) and wogonin (5,7-dihydroxy-8-methoxy flavone).

Abstract: A new structure of a triple-well non-volatile semiconductor memory cell array and a method of fabricating the memory arrays are described. The circuit layout of the memory array not only includes the conventional floating gates, control gates, cell sources and cell drains, but also adds the local source regions to increase the coupling ratio. Besides, the new design can reduce the number of contact windows, further increasing the packing density of the memory array. The key point of the method is the triple-well formation inside the silicon substrate that lowers the operational voltage of periphery circuit. Furthermore, there are two additional isolation regions between two adjacent metal lines, which can minimize the possibility of cross talk due to shirking spacing.

Abstract: A new structure of a non-volatile semiconductor memory cell array and a method of fabricating the memory arrays. The circuit layout of the memory array not only comprises of the conventional floating gates, control gates, cell sources and cell drains, but also adds the local source regions to increase the coupling ratio. Besides, the new design can reduce the number of metal contact windows, further increase the packing density of the memory array. Furthermore, an additional isolation region is formed between two bit lines so as to increase the distance between two bit lines, which can minimize the possibility of cross talk due to shirking spacing.

Abstract: There is provided a process for preparing a partially-dissolvable and splittable conjugated microfiber with a cross-section having a matrix comprising orange-wedge shaped islands slightly connected with each other at the tips of the islands at a common matrix center. The conjugated fibers can be made into filaments and staple fibers. Filaments are spun, taken-up and then textured by means of a belt nip twister. The resulting texture yarns may then be partially dissolved, following weaving, to split. Staple fiber is processed into a non-woven fabric or, by spinning, to spun yarn and then by weaving thereof. The staple fibers can be made into fabrics such as suede fabrics, water-resistant and humidity-permeable high density fabrics, and peachskin fabrics.