Abstract: A compound represented by formula (I), a stereoisomer, deuterated compound, solvate, pharmaceutically acceptable salt or co-crystal thereof, or a pharmaceutical composition containing them, and use of the compound as a PARP-1 inhibitor in the preparation of a drug for treating related diseases, each group in the formula (I) being as defined in the description.

Abstract: Methods and systems are provided for selectively controlling hybrid drive modes of a hybrid vehicle to reduce emissions. In one example, a method may include using route planning and vehicle operating conditions to identify emissions reducing opportunities. In one example, in response to a route distance not exceeding an electric range, the method includes suppressing an operation of an engine based on the route data, ambient temperature, and cabin pre-conditioning. In response to the route distance exceeding the electric range, further in anticipation of a fuel station along the route, where the fuel station has a fuel with a carbon footprint less than a low carbon threshold, the method includes operating the hybrid vehicle in a charge sustaining or charge increasing mode prior to a refueling event at the fuel station.

Abstract: The disclosure provides a detection method and apparatus, an electronic device, and a storage medium. The detection method includes: obtaining a first shell command; performing syntax analysis on the first shell command to obtain a command execution intention for the first shell command; determining a command execution path corresponding to the first shell command based on the command execution intention; and determining whether the first shell command is a reverse shell intrusion command in response to at least one node in the command execution path satisfying a first predetermined condition.

Abstract: In a method for updating and debugging an application program performed by a developer tool, a modified portion of a complete code of a first application program is compiled to obtain a first compilation result. An updated code package of the first application program is generated based on the first compilation result and a stored second compilation result. The stored second compilation result corresponds to unmodified portions of the complete code. The updated code package is transmitted to a multi-platform framework. The multi-platform framework is configured to convert the updated code package into a second application program. The second application program and the first application program are configured to operate in different runtime environments.

Abstract: Semiconductor devices include a bottom layer and a top layer. The bottom layer includes a pair of first channel regions being separated by a first dielectric bar, a pair of second channel regions being separated by a second dielectric bar, and a gate structure having an integral backside contact between the first channel regions and the second channel regions. The top layer includes third channel regions, over and laterally offset with respect to the first channel regions, and fourth channel regions, over and laterally offset with respect to the second channel regions.

Abstract: A semiconductor device is provided. The semiconductor device includes a first stacked nanosheet structure and a second stacked nanosheet structure each including a first nanosheet structure formed at a first level and a second nanosheet structure formed at a second level. A configuration of the first stacked nanosheet structure on the first level is different than a configuration of the second stacked nanosheet structure on the first level, or the configuration of the first stacked nanosheet structure on the second level is different than a configuration of the second stacked nanosheet structure on the second level.

Abstract: Embodiments of the present disclosure relate to a local interconnect in sequential stacking of transistors. A semiconductor structure includes a first transistor stacked under a second transistor. An interconnect layer is between the first and second transistors, the interconnect layer including a conductive via and a conductive line.

Abstract: A semiconductor structure is provided that includes a lateral passive diode co-integrated with nanosheet stacked FET technology. Notably, the semiconductor structure includes a passive/diode device region including a lateral passive diode that is located between two nanosheet stacks. In embodiments, a logic device region including a stacked nanosheet transistor is located adjacent to the passive/diode device region.

Abstract: Embodiments of the disclosure provide a solution for speech generation. A method includes: determining, based on a target text, a plurality of phoneme feature representations corresponding to a sequence of phonemes in the target text and respective phoneme durations for the plurality of phoneme feature representations; extending the plurality of phoneme feature representations based on the respective phoneme durations, to obtain an extended sequence of phoneme feature representations; masking at least one phoneme feature representation in the extended sequence of phoneme feature representations, to obtain a sequence of masked phoneme feature representations; and generating a target speech corresponding to the target text at least based on the sequence of masked phoneme feature representations.

Abstract: A semiconductor device is provided and includes a first transistor including a first source/drain (S/D) region, a second transistor stacked over the first transistor and including a second S/D region, a first backside power rail (BPR) disposed below the first transistor, a second BPR disposed below the first BPR, a via by which the second S/D region and the first BPR are connected and metallization. The metallization passes through and is insulated from the first BPR. The first S/D region and the second BPR are connected by the metallization.

Abstract: A semiconductor structure is provided that includes a backside dielectric cap which seals the gate structure thus preventing gate structure exposure during backside processing. The presence of the backside dielectric cap helps to mitigate gate to direct backside source/drain contact shorts. The backside dielectric cap is formed during frontside processing.

Abstract: A nanosheet field effect transistor (FET) comprises a diffusion region and a gate. The diffusion region connects to a backside power delivery network. The diffusion region is beneath the gate. The gate is in a first gate region. The gate comprises a first gate extension region that extends over the diffusion region.

Abstract: A semiconductor structure includes a transistor device having a first nanosheet device disposed on a second nanosheet device in a stacked configuration. The first nanosheet device includes a plurality of first nanosheet channel layers, wherein each of the plurality of first nanosheet channel layers have a nanosheet channel portion on one end and a dielectric material portion on another end. The second nanosheet device includes a plurality of second nanosheet channel layers. The dielectric material portion of the plurality of first nanosheet channel layers is part of a non-active region.

Abstract: Embodiments of the disclosure are directed to an integrated circuit (IC) that includes a bottom device and a top device positioned over the bottom device. The top device includes a first nanosheet and a second nanosheet. The bottom device includes a third nanosheet and a fourth nanosheet. A space between the first nanosheet and the second nanosheet is greater than a space between the third nanosheet and the fourth nanosheet.

Abstract: Disclosed are a compound as represented by general formula (I) or a stereoisomer, deuterated compound, solvate, prodrug, metabolite, pharmaceutically acceptable salt or co-crystal thereof and an intermediate thereof; and the use thereof m AR-related diseases such as cancer.

Abstract: Disclosed in the present invention are a tricyclic fused heterocyclic compound having PDE3/4 dual inhibitory effect as represented by formula (1), and a stereoisomer, solvate, or pharmaceutically acceptable salt thereof, and the use thereof in the preparation of a drug for treating/preventing PDE3/4-mediated diseases, wherein each group in formula (1) is as defined in the description.

Abstract: Controlling an electric vehicle having a battery pack includes, after a plurality of charging-discharging operations of the battery pack, controlling electric power usage of the battery pack based on a battery health measurement from a battery health model that uses a plurality of detected battery health inputs including a current life of the electric vehicle and an initial throughput characteristic.

Abstract: Embodiments of present invention provide a semiconductor structure. The structure includes a first group of field-effect-transistors (FETs); a second group of FETs on top of the first group of FETs; a first half-single-diffusion-break (H-SDB) underneath and being separated from one of the FETs of the second group by a middle-dielectric-insulator (MDI) layer; and a second H-SDB on top of and being separated from one of the FETs of the first group by the MDI layer, where the first H-SDB insulates a source/drain (S/D) region of a first FET of the first group of FETs from a S/D region of a second FET of the first group of FETs, and the second H-SDB insulates a S/D region of a first FET of the second group of FETs from a S/D region of a second FET of the second group of FETs. A method of forming the same is also provided.

Abstract: The present invention relates to a compound represented by general formula (I) or a stereoisomer, a tautomer, a deuterated substance, a solvate, a prodrug, a metabolite and a pharmaceutically acceptable salt or eutectic crystal thereof, an intermediate thereof, and a use of the compound in METTL3-related diseases such as cancer.