Abstract: Embodiments of the present disclosure relate to fabrication methods and resulting semiconductor integrated circuit (IC) devices that include a stacked transistor that has a gate-to-gate contact within bonding layer(s) that connects the top transistor to the bottom transistor. A high-? layer that is associated with the top gate may be selectively deposited such that the high-? layer is absent from the gate-to-gate contact. This enables the gate-to-gate contact to electrically contact a relatively higher conductivity material(s) (e.g., work function metal, or the like) within the top gate, which reduces the impedance or interfacial resistance between top gate and the gate-to-gate contact.

Abstract: This application provides a data processing method on a multi-end application platform performed by a computer device.

Abstract: An antenna includes: a first antenna element, including a first radiation stub having a first feeding end and a second radiation stub having a second feeding end; a first feeding part, coupled to the first feeding end and the second feeding end of the first antenna element; a second antenna element, including a third radiation stub having a third feeding end and a fourth radiation stub having a fourth feeding end; a second feeding part, coupled to the third feeding end and the fourth feeding end of the second antenna element; and a coupling stub, coupled to the first antenna element through the first feeding end and the second feeding end, and coupled to the second antenna element through the third feeding end.

Abstract: A backing film removal system comprises a separating mechanism configured to separate a first portion of a first backing film on a first side of a material segment and a second portion of a second backing film on a second side of the material segment from a material layer of the material segment, wherein the second side is opposite the first side. The backing film removal system also includes a clamping mechanism that is actuatable to apply a clamping force to secure the material layer and the second portion together. A separator assembly includes a gripping mechanism configured to grip the first portion. At least one of the gripping mechanism or the clamping mechanism is movable to draw the first portion gripped by the gripping mechanism away from the material layer to remove a remaining portion of the first backing film from the material layer.

Abstract: A reactant flow can be provided to a first volume of a catalytic membrane reactor. The catalytic membrane reactor can include at least one hollow fiber membrane and at least one catalyst. Each hollow fiber membrane can have an annular wall formed of carbon. The catalytic membrane reactor can be subjected to an elevated temperature, such that the reactant in the reactant flow is converted to one or more products and such that hydrogen permeates through the annular wall and is carried from a second volume of the catalytic membrane reactor by a sweep gas flow or vacuum.

Abstract: A method and a system for detecting railway foreign object intrusion, and a device and a medium can include acquiring a first key frame of railway image of a current scenario as a template image, and an Nth frame of railway image as a to-be-detected image; inputting the template image and the to-be-detected image of the current scenario into a foreign object intrusion prediction model to obtain a foreign object feature map of the current scenario, so as to determine whether there is a different target between the to-be-detected image and the template image of the current scenario; and filtering, by using a moving object filter model, a moving object from the different target of the to-be-detected image of the current scenario in response to existing different target, to obtain a true foreign object in the to-be-detected image of the current scenario.

Abstract: A semiconductor device includes a passive device including a top device including a top N-type doped region and a top P-type doped region separated by a top gate region, a first frontside contact and a second frontside contact over the top N-type doped region and the top P-type doped region, respectively. The semiconductor device further includes a bottom device including a bottom P-type doped region and bottom N-type doped region separated by a bottom gate region, and a first backside contact and a second backside contact below the bottom N-type doped region and the bottom P-type doped region, respectively, and a well region electrically connecting the top device to the bottom device.

Abstract: A semiconductor device includes a first field effect transistor (FET) on a first level and a second FET on a second level stacked over and overlapping the first FET of the first level in an overlap region. The source/drain (S/D) regions of the second FET are shifted relative to S/D regions of the first FET. A merged gate connection connects gates of the first FET and the second FET in the overlap region.

Abstract: A method, a device and a storage medium for detecting intrusion of a container environment. The method includes: performing event recognition on a real-time system event by calling an event recognition model corresponding to the target container, where the event recognition model is constructed based on a historical normal system event of the target container; in response to determining that the real-time system event is an abnormal system event, calling a predetermined intrusion detection rule to perform intrusion detection on the real-time system event, to determine whether the real-time system event is an intrusion event. Thus, a real-time system event that belongs to a normal system event may be filtered out, and a complete intrusion detection may be performed on the abnormal system event, thereby reducing the amount of data for intrusion detection, reducing resource occupation, and improving the performance and efficiency of the intrusion detection.

Abstract: The present disclosure relates to carbon molecular sieve membranes, methods of making carbon molecular sieve membranes through bundle pyrolysis, and uses thereof for separating a mixture of gases. The carbon molecular sieve membranes formed by bundle pyrolysis of the present invention can be readily scaled to dozens or hundreds of fibers per module, retain excellent gas selectivity properties, and are able to be selective towards separating gases, such as H2, from a mixture of gases, and are faster to produce compared to carbon molecular sieve membranes formed through individual pryolysis.

Abstract: A location tagging and management system including a transceiver and a processor is disclosed. The transceiver may receive historical trip information and historical charging information associated with a vehicle. The processor may determine a primary location, from a plurality of locations, associated with the vehicle based on the historical trip information and the historical charging information. The plurality of locations may be historically visited by the vehicle. The processor may further determine a real-time utility power demand in a geographical area including the primary location, when the vehicle is located at the primary location. The processor may additionally compare the real-time utility power demand with a predefined demand threshold, and perform a predefined action when the real-time utility power demand is greater than the predefined demand threshold.

Abstract: A transient voltage support method and apparatus for an energy storage converter, a device, and a storage medium are described. The transient voltage support method for the energy storage converter includes: obtaining preset reference value data and output electrical information of the energy storage converter; obtaining active power information, reactive power information, and voltage amplitude information of a grid connection point in response to the output electrical information; and obtaining grid connection control data of the energy storage converter in response to one or more of the preset reference value data, the active power information, the reactive power information, and the voltage amplitude information, and controlling the energy storage converter to perform transient voltage support control during grid connection conversion through the grid connection control data.

Abstract: A compound as represented by general formula (I) or a stereoisomer, deuterated compound, solvate, prodrug, metabolite, pharmaceutically acceptable salt or a cocrystal thereof, and an intermediate thereof, a preparation method therefor, and the use thereof in the preparation of a drug for treating pain.

Abstract: Disclosed in the present disclosure are a pyridazinone heterocyclic compound shown in formula (I), a stereoisomer, a deuterated substance, a solvate, a pharmaceutically acceptable salt or a eutectic crystal thereof, a pharmaceutical composition containing same, and a use thereof in the preparation of drugs for treating/preventing Myosin II-mediated diseases. Groups in the formula (I) are as defined in the description.

Abstract: A signal transmission circuit of a magnetic resonance imaging system, an optical communication module, and a system are provided. The signal transmission circuit includes: a processing circuit, which receives electrical signals from a plurality of signal receiving coil elements of the magnetic resonance imaging system, and respectively modulates the electrical signals from the plurality of signal receiving coil elements to corresponding non-overlapping frequency bands; and a receiving circuit, which is connected to the processing circuit and extracts the electrical signal in each frequency band from an output signal of the processing circuit. According to the present application, the number of channels of a signal is reduced, the difficulty of signal transmission and processing is reduced, and the number of elements of a signal transmission circuit is reduced. As a result, the difficulty of aspects such as chip design, manufacturing, and thermal management can be reduced.

Abstract: A semiconductor structure including a bottom source drain region arranged above front-end-of-line circuitry, a gate region disposed above and insulated from the bottom source drain region, a top source drain region disposed above and insulated from the gate region, and a channel region adjacent to the gate region and extending vertically from a top surface of the bottom source drain region to a bottom surface of the top source drain region.

Abstract: A semiconductor device includes a substrate; a first nanosheet transistor, which is located on the substrate, that has a first inter-channel spacing and that has a thin gate oxide layer; and a second nanosheet transistor, which is located on the substrate, that has a second inter-channel spacing that is greater than the first inter-channel spacing and that has a thick gate oxide layer that is thicker than the thin gate oxide layer of the first nanosheet transistor. The second nanosheet transistor comprises channel structures and a source/drain structure that wraps around the ends of the channel structures. In embodiments, there are inner spaces at ends of the gate stacks in the first transistor, but not at the ends of the gate stacks in the second transistor.

Abstract: An electronic device includes an outer casing and an antenna structure located in the outer casing. The antenna structure includes a circuit board and a first radiation structure including a first radiation ring and a plurality of stubs. The outer casing includes a metal ring housing extending in an axial direction, which is parallel to the axial direction of the first radiation ring. The plurality of stubs, including one feed stub and at least two first grounding stubs, are distributed in a circumferential direction of the first radiation ring and are connected between the first radiation ring and the circuit board. Two adjacent stubs and a first section of the first radiation ring that is located between the two adjacent stubs form an antenna substructure. The feed stub is configured to feed the first radiation ring that is configured to generate a first resonance.

Abstract: An apparatus for controlling a ply of a composite material includes a robotic arm and an end effector mounted to the robotic arm. The end effector includes a base fixed to the robotic arm, a platform supported by the base, a disk supported by the platform, an arcuate track supported by the disk, and a ply manipulator extending from the arcuate track. The base includes a base track extending along a first translational dimension. The platform is movable along the base track and includes a platform track extending along a second translational dimension. The disk is movable along the platform track and is rotatable about a first rotational dimension. The arcuate track extends along a second rotational dimension. The ply manipulator is movable along the arcuate track.

Abstract: Embodiments are disclosed for a semiconductor structure. The semiconductor structure includes a first nanosheet layer. The first nanosheet layer includes a first channel region, and a heavily doped epitaxial region of a first type. Further, the semiconductor structure includes a second nanosheet layer. The second nanosheet layer includes a second channel region, a heavily doped epitaxial region of a second type disposed above the first nanosheet layer, and a first gate surrounding the first channel region and the second channel region. Additionally, the semiconductor structure includes a protection diode. The protection diode includes a source, a drain, and a second gate. The drain is connected to the first gate, and the second gate is connected to the source.