Patents by Inventor Chen Zhang

Chen Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10790696
    Abstract: The present disclosure discloses a charging device, a charging method, a power adapter and a terminal. The charging device includes a charging receiving terminal, a voltage adjusting circuit and a central control module. The charging receiving terminal is configured to receive an alternating current. The voltage adjusting circuit includes a first rectifier, a switch unit, a transformer and a second rectifier. The first rectifier is configured to rectify the alternating current and output a first voltage. The switch unit is configured to modulate the first voltage to output a modulated first voltage. The transformer is configured to output a second voltage according to the modulated first voltage. The second rectifier is configured to rectify the second voltage to output a third voltage. The voltage adjusting circuit applies the third voltage to a battery directly.
    Type: Grant
    Filed: July 11, 2017
    Date of Patent: September 29, 2020
    Assignee: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD.
    Inventors: Jialiang Zhang, Shebiao Chen, Jun Zhang, Chen Tian, Shiming Wan, Jiada Li
  • Patent number: 10790271
    Abstract: A method for manufacturing a semiconductor device includes forming a first field-effect transistor (FET) on a substrate, the first FET comprising a first plurality of channel regions extending in a first direction, and stacking a second FET on the first FET, the second FET comprising a second plurality of channel regions extending in a second direction perpendicular to the first direction, wherein the first FET comprises a first gate region extending in the second direction across the first plurality of channel regions, and the second FET comprises a second gate region extending in the first direction across the second plurality of channel regions.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: September 29, 2020
    Assignee: International Business Machines Corporation
    Inventors: Zheng Xu, Chen Zhang, Ruqiang Bao, Dongbing Shao
  • Patent number: 10790769
    Abstract: Provided are a control method and system for enhancing an endurance capability to an abnormal voltage of a wind turbine generator system. The control method, includes; providing a doubly-fed wind turbine generator system connected to a power grid; detecting a voltage of the power grid, and determining whether the voltage of the power grid has a fault; when the voltage of the power grid has a fault, detecting a voltage of the DC buses, and determining whether the voltage of the DC buses exceeds a limit value; when the voltage of the DC buses exceeds the limit value, performing integrated system coordination control according to an abnormal operating condition mode; and when the voltage of the power grid returns to a normal range, performing integrated system coordination control according to a normal operating condition mode.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: September 29, 2020
    Assignees: Wind Power Technology Center of Gansu Electric Power Company, State Grid Corporation of China, Gansu Electric Power Company of State Grid, Shanghai Jiao Tong University
    Inventors: Ningbo Wang, Liang Lu, Kun Ding, Shiyuan Zhou, Chen Zhang, Jin Li, Zheng Li, Nianzong Bai, Jing Zhi, Xu Cai, Youming Cai
  • Publication number: 20200303553
    Abstract: A semiconductor structure disposed on a substrate including a first metal layer disposed on the substrate, a gate insulating layer disposed on the substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopping pattern disposed on the oxide semiconductor layer, and a second metal layer disposed on the etch stopping layer. The first metal layer includes a gate line. The gate insulating layer covers the gate line. Patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer includes a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern. The etch stopping layer is located between the second metal layer and the oxide semiconductor layer. The second metal layer includes a signal line disposed on the etch stopping layer and is electrically connected to the oxide semiconductor pattern. A manufacturing method of the semiconductor structure is also provided.
    Type: Application
    Filed: July 4, 2019
    Publication date: September 24, 2020
    Applicant: Au Optronics Corporation
    Inventors: Po-Liang Yeh, Chen-Chung Wu, De-Zhang Deng, Chia-Ming Chang
  • Publication number: 20200303244
    Abstract: A semiconductor wafer includes a substrate. The substrate includes a first substrate region doped with a first dopant and a second substrate region doped with a second dopant. The semiconductor wafer further includes a buried oxide (BOX) layer formed on the substrate and a channel layer formed above the BOX layer. A first transistor is operably disposed on the substrate in the first substrate region and a second transistor is operably disposed on the substrate in the second substrate region. First doped source and drain structures electrically connected to the substrate in the first substrate region and separated by portions of the channel layer and the BOX layer. Second doped source and drain structures electrically connected to the substrate in the second substrate region and separated by portions of the channel layer and the BOX layer.
    Type: Application
    Filed: March 22, 2019
    Publication date: September 24, 2020
    Inventors: Chen Zhang, Xin Miao, Wenyu XU, Kangguo Cheng
  • Publication number: 20200303263
    Abstract: A method of forming a semiconductor structure includes forming a stacked vertical transport field-effect transistor (VTFET) structure and a sacrificial layer in contact with a source/drain region of the stacked vertical transport field-effect transistor structure. A masking layer is formed over the sacrificial layer. The masking layer defines a pattern to be patterned into the sacrificial layer. The sacrificial layer is patterned based on the masking layer to form a patterned sacrificial layer and the masking layer is removed. A portion of the stacked VTFET structure is etched down to a surface of the patterned sacrificial layer and the patterned sacrificial layer is removed to form a channel exposing the source/drain region. A contact material is formed in the etched portion of the stacked vertical transport field-effect transistor structure and in the channel. The contact material is formed in contact with the exposed source/drain region.
    Type: Application
    Filed: March 21, 2019
    Publication date: September 24, 2020
    Inventors: Chen Zhang, Tenko Yamashita, Kangguo Cheng, Oleg Gluschenkov
  • Publication number: 20200304577
    Abstract: A method, system, and computer program product may generate synchronous application logs. A client device may create a session with a server, and the client device may be granted privileges to receive a backend service log associated with the session. A socket accompanying the session may be created between the client and server for communicating the backend service log. The requests from the client device may be monitored at the server, and log information related to the requests may be extracted by the backend service associated with the backend service log. The extracted log information may be transferred, via the socket, to the client device.
    Type: Application
    Filed: March 19, 2019
    Publication date: September 24, 2020
    Inventors: Zhi Gang Lin, Li Xiang, Peng Chang, Chun Ling Li, Dan Li, Xiao Feng Zhang, Mu Chen
  • Patent number: 10784077
    Abstract: Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: September 22, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Frank Nan Zhang, Zhongwei Chen, Yixiang Wang, Ying Crystal Shen
  • Patent number: 10784364
    Abstract: A method for manufacturing a semiconductor device includes forming a stacked configuration of a plurality of silicon germanium layers and a plurality of silicon layers on a semiconductor substrate, wherein the stacked configuration comprises a repeating arrangement of a silicon layer stacked on a silicon germanium layer, patterning the stacked configuration into a plurality of patterned stacks spaced apart from each other, and etching exposed sides of the plurality of silicon germanium layers to remove portions of the silicon germanium layers from lateral sides of each of the plurality of silicon germanium layers, wherein a concentration of germanium is varied between each of the plurality of silicon germanium layers to compensate for variations in etching rates between the plurality of silicon germanium layers to result in remaining portions of each of the plurality of silicon germanium layers having the same or substantially the same width as each other.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: September 22, 2020
    Assignee: International Business Machines Corporation
    Inventors: Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang
  • Patent number: 10785345
    Abstract: An information processing method, which is applied to a server, includes: a public message is transmitted to a first client, the public message being a message issued to the first client by the server, the public message carrying first information and a second information set including N pieces of second information, with N being a positive integer, the first information is information only allowed to be gotten by the first client and the second information is information only allowed to be gotten by a client in a sharing relationship with the first client; and a request for getting the second information is received from a second client, it is verified whether the second client is in the sharing relationship with the first client, and after the second client is determined to be in the sharing relationship with the first client, the second client is allowed to get the second information.
    Type: Grant
    Filed: August 15, 2017
    Date of Patent: September 22, 2020
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Xiaoyu Yu, Bin Zhang, Libin Ren, Wei Mao, Sixin Gu, Qiang Lu, Yongjie Li, Xuan Ye, Wenrui Zhang, Keren Li, Wenxin Liao, Jinming Zhang, Yi Gao, Boen Liang, Zeming Fan, Weizhao Li, Leming Fang, Tanhong Li, Guowei Xiang, Xinji Nie, Rui Tang, Haixia Rao, Feng Chen, Yi Wu, Chen Gong, Qianya Lin, Junbin Kuang, Siyu Xiao, Pengfei Wang, Leteng Weng, Xiaobin Fang, Mengsha Zhou, Zhenzhen Xu, Bei Yang, Shaomian Yao
  • Patent number: 10785479
    Abstract: In one embodiment, a method determines if a first flag for using a most probable mode (MPM) set for intra prediction is set. When the first flag indicates the MPM set is used, the method decodes a first index for the MPM, the first index indicating a first intra prediction mode in the MPM set. When the first flag does not indicate the MPM set is being used, the method determines if a second flag for using a near-MPM set is set. When the second flag indicates the near-MPM set is being used, the method decodes a second index for the near-MPM, the second index indicating a second intra prediction mode in the near-MPM set. When the second flag does not indicate the near-MPM is being used, the method decodes a third index for a non-MPM, the third index indicating a third intra prediction mode in the non-MPM set.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: September 22, 2020
    Assignee: HULU, LLC
    Inventors: Wenhao Zhang, Deliang Fu, Min Gao, Chen Liu, Juncheng Ma
  • Patent number: 10782913
    Abstract: A system, method, and program product are disclosed for asynchronous remote copy. One method includes transmitting a write request to a remote primary storage cluster for an asynchronous remote copy operation. The method also includes creating an entry in a write record stored in the local memory, the entry comprising a data consistency value, and removing the entry from the write record in response to receiving an acknowledgement from a remote secondary storage cluster that the asynchronous remote copy operation is completed.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: September 22, 2020
    Assignee: International Business Machines Corporation
    Inventors: Duo Chen, Jialin Feng, Dan Liu, Yuan Li, Ning Min Zhang
  • Patent number: 10780437
    Abstract: Disclosed is a microfluidic system based on an artificially structured acoustic field, comprising a microcavity used to accommodate a solution containing particles and a ultrasonic emission device used to emit ultrasound, and further comprising a phononic crystal plate placed in the microcavity. The phononic crystal plate has an artificial cycle structure, and is used to modulate the acoustic field so as to control the particles. Also disclosed is a method of controlling microfluid particles based on an artificially structured acoustic field. In the particular embodiments, since a microcavity, an ultrasonic emission device and a phononic crystal plate are comprised, the ultrasonic emission device is used to emit ultrasound, and the phononic crystal plate has an artificial cycle structure, and is used to modulate the acoustic field so as to control the particles.
    Type: Grant
    Filed: October 10, 2015
    Date of Patent: September 22, 2020
    Assignee: SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
    Inventors: Hairong Zheng, Fei Li, Feiyan Cai, Long Meng, Chen Wang, Chengxiang Zhang, Weibao Qiu, Yongchuan Li, Fei Yan, Lili Niu, Liufeng Geng, Chaowei Xu
  • Publication number: 20200295876
    Abstract: Embodiments of this application provide a method for encoding data in a wireless communication network. A communication device obtains an information bit sequence of a bit length K and a code length M. When M is greater than or equal to a first threshold and K is greater than or equal to a second threshold, the device divides the information bit sequence into p subsequences that are of an equal length K1. Then the device encodes each of the p subsequence to obtain p encoded subsequences. The device rate-matches each of the p encoded subsequences to obtain p rate matched subsequences, concatenates the p rate matched subsequences to obtain the output sequence of the code length M, then outputs the output sequence.
    Type: Application
    Filed: March 27, 2020
    Publication date: September 17, 2020
    Applicant: HUAWEI TECHNOLOGIES CO.,LTD.
    Inventors: Chen Xu, Rong Li, Gongzheng Zhang, Yue Zhou, Lingchen Huang, Yunfei Qiao, Carmela Cozzo, Yiqun Ge
  • Publication number: 20200295132
    Abstract: A semiconductor device and method for forming the same. The device comprises at least a dielectric layer, a two-dimensional (2D) material layer, a gate structure, and source/drain contacts. The 2D material layer contacts the dielectric layer. The gate structure contacts the 2D material layer. The source/drain contacts are disposed above the 2D material layer and contact the gate structure. The method includes forming a structure including at least a handle wafer, a 2D material layer, a gate structure in contact with the 2D material layer, an insulating layer, and a sacrificial layer. A portion of the sacrificial layer is etched. An inter-layer dielectric is formed in contact with the insulating layer and sidewalls of the sacrificial layer. The sacrificial layer and a portion of the insulating layer are removed. Source and drain contacts are formed in contact with the portion of the 2D material layer.
    Type: Application
    Filed: March 13, 2019
    Publication date: September 17, 2020
    Inventors: Chen ZHANG, Peng XU, Chun Wing YEUNG
  • Patent number: 10778938
    Abstract: In some embodiments, a method receives sub-bitstreams from a multi-pass transcoding process of a video. A target quality is received based on a characteristic of transcoding of the video. Then, the method generates a combination of sub-bitstream chunks from the sub-bitstreams for the video. A set of exchange rates is calculated where each exchange rate defines how much bitrate will be reduced in relation to quality if an anchor sub-bitstream chunk from the combination of sub-bitstream chunks is replaced with another sub-bitstream chunk from other sub-bitstreams. Then method iteratively exchanges one of the anchor sub-bitstream chunks in the combination of sub-bitstream chunks with another sub-bitstream chunk based on the exchange rate of the anchor sub-bitstream chunk in the combination of sub-bitstream chunks until the quality measurement of the combination meets the target quality. Then, the combination of sub-bitstream chunks is recorded as a transcoded bitstream.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: September 15, 2020
    Assignee: HULU, LLC
    Inventors: Chen Liu, Wenhao Zhang, Xiaobo Liu, Deliang Fu
  • Patent number: 10774594
    Abstract: A downhole cutting tool includes a tool body defining a cutter pocket and a rolling cutter having an inner rotatable cutting element and a sleeve in the cutter pocket, where axial movement of the inner rotatable cutting element is limited by an external retention element disposed outside of the sleeve.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: September 15, 2020
    Assignee: SMITH INTERNATIONAL, INC.
    Inventors: Youhe Zhang, Chen Chen, Yuri Y. Burhan
  • Patent number: 10773959
    Abstract: Methods for representing crystal structure of inorganic materials in matrix form, and for quantitative comparison of multiple inorganic materials, can be employed to identify candidate materials with high potential to possess a desired property. Such methods can include conversion of an atomic coordinate set to a coordinate set for an anion only lattice, anion substitution, and unit cell re-scaling. Such methods can further include simulation of x-ray diffraction data for modified anion-only lattices, and generation of n×2 matrices from the simulated diffraction data. Quantitative structural similarity values can be derived from the n×2 matrices. The quantitative structural similarity values can be useful for structural categorization, as well as prediction of functional properties.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: September 15, 2020
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Chen Ling, Ying Zhang, Zhiqian Chen, Debasish Banerjee
  • Patent number: 10773597
    Abstract: An autonomous vehicle controller includes a memory and a processor programmed to execute instructions stored in the memory. The instructions include determining a plurality of energy cost functions. Each energy cost function is associated with a combination of candidate variables. The instructions further include selecting one of the plurality of energy cost functions as a minimum energy cost function, determining a combination of candidate variables associated with the minimum energy cost function, and controlling acceleration of a host vehicle according to the combination of candidate variables associated with the minimum energy cost function.
    Type: Grant
    Filed: October 6, 2017
    Date of Patent: September 15, 2020
    Assignee: FORD GLOBAL TECHNOLOGIES, LLC
    Inventors: Yanan Zhao, Chen Zhang, Ming Lang Kuang
  • Patent number: 10774596
    Abstract: A cutting element includes a cutting end extending a depth from a cutting face to an interface surface opposite from the cutting face, and a spindle, the spindle axially separated from the cutting end by a transition region. The spindle has a spindle diameter measured between a spindle side surface, which is less than a cutting end diameter. A guide length, measured from a point of transition to the transition region to a retention feature, is longer than 75% of a total length of the spindle.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: September 15, 2020
    Assignee: SMITH INTERNATIONAL, INC.
    Inventors: Youhe Zhang, Chen Chen, Yuri Burhan, Balasubramanian Durairajan, Sandeep Tammineni