Abstract: An optical biometer including a light source, a first-stage coupler, a first and a second second-stage coupler, a first and a second optical path difference generator, a first and a second optical component set, a first and a second detection device is disclosed. The first-stage coupler receives an incident light from the light source and emits first and second first-stage lights. The first second-stage coupler receives the first first-stage light and emits first and second second-stage lights. The second second-stage coupler receives the second first-stage light and emits third and fourth second-stage lights. The first/second optical path difference generator generates the first/fourth second-stage light with the first/second optical path difference. The first/second optical component set emits the second/third second-stage light to a first/second position of an eye and receives a first/second reflected light. The first/second detector receives a first/second detection light.

Abstract: A method of an interconnect structure includes the following steps. A first etching stop layer, a first dielectric layer, a second etching stop layer, an insert layer and a second dielectric layer are deposited over the second etching stop layer are deposited over a substrate. The second dielectric layer, the insert layer, the second etching stop layer, the first dielectric layer and the first etching stop layer are patterned thereby forming a trench opening and a via hole. A conductive feature is filled in the trench opening and the via hole thereby forming a conductive line in the second dielectric layer and the insert layer and a via in the first etching stop layer and the first dielectric layer. A material of the insert layer is different from the second dielectric layer and the second etching stop layer.

Abstract: A method for making a middle-of-line interconnect structure in a semiconductor device includes forming, near a surface of a first interconnect structure comprised of a first metal, a region of varied composition including the first metal and a second element. The method further includes forming a recess within the region of varied composition. The recess laterally extends a first distance along the surface and vertically extends a second distance below the first surface. The method further includes filling the recess with a second metal to form a second interconnect structure that contacts the first interconnect structure.

Abstract: A method for treating a waste liquid comprises: step (A), adding a precursory oxidant to a waste liquid having a temperature of 25-70° C.; wherein, the precursory oxidant is hydrogen peroxide or sodium percarbonate, and in mg/L, a ratio of the precursory oxidant/the total amount of sulfide is 2.20 to 6.37; step (B), mixing an advanced oxidant and the waste liquid after step (A); wherein, the advanced oxidant is sodium persulfate or potassium persulfate, and in mg/L, a ratio of the advanced oxidant/COD after step (A) is 7.63 to 33.27; step (C), using UV illumination method to illuminate the oxidant dissolved in the waste liquid after step (B), and aerated with oxygen-containing gas. By the above-described method, it can achieve the purpose of sulfide conversion and degradation and removal of organic pollution composition under the condition free of the generation of H2S.

Abstract: A memory device is provided, the memory device includes multiple cells arranged in a matrix of multiple rows and multiple columns. The memory device further includes multiple bit lines each of which is connected to first cells of the multiple cells arranged in a row of the multiple rows. A voltage control circuit is connectable to a selected bit line of the multiple bit lines and includes a voltage detection circuit that detects an instantaneous supply voltage and a voltage source selection circuit connected to the voltage detection circuit. The voltage source selection circuit selects a voltage source from multiple voltage sources based on the detected instantaneous supply voltage. The voltage source selection circuit includes a switch that connects the selected voltage source to the selected bit line to provide a write voltage.

Abstract: A data storage system with intelligent power management includes a plurality of data storage devices and a controller. Each data storage device is capable of operating in one of (N+1) power saving functions where N is an integer larger than 1. The (N+1) power saving functions sequentially correspond to from the 0th to the Nth power saving levels. The controller reads a user-setting power saving level (I) where I is an integer index ranging from 0 to N. The controller reads a current power saving level (J) of a current power saving function of one of the plurality of data storage devices where J is an integer index ranging from 0 to N. The controller controls said one data storage device to operate in one power saving function among the (N+1) power saving functions according to the user-setting power saving level (I) and the current power saving level (J).

Abstract: A system includes a charge pump system having a plurality of enable signal input terminals and an output terminal, the charge pump system configured to provide an output voltage at the output terminal; and a detection circuit connected to the enable terminals and the output terminal of the charge pump system, the detection circuit configured to compare the charge pump system output voltage to a plurality of predefined input detection voltage levels, and to selectively output a plurality of enable signals to the charge pump system enable signal input terminals in response to the comparison.

Abstract: A display assembly including a stand, a mounting assembly and a display. The mounting assembly includes a fixed base, a first pivot, a pivotable base, a second pivot, a handle, a plurality of first engagement structures and a second engagement structure. The handle includes a handheld part and a mounting part. The mounting part is connected to the handheld part and pivotally connected to the pivotable base via the second pivot. The first engagement structures are disposed at one of the fixed base and the mounting part of the handle. The second engagement structure is disposed at another one of the fixed base and the mounting part of the handle. The display is fixed on the pivotable base. The first pivot is not coaxial with the second pivot so that the second engagement structure is configured to be engaged with any one of the first engagement structures.

Abstract: A memory device includes a memory cell and a sense amplifier. The sense amplifier has a reference circuit configured to output a reference voltage and a sensing circuit connected to the memory cell. A comparator includes a first input and a second input, with the first input connected to the reference circuit to receive the reference voltage, and the second input connected to the memory cell. A precharger is configured to selectively precharge the sensing circuit to a predetermined precharge voltage.

Abstract: A method for making a middle-of-line interconnect structure in a semiconductor device includes forming, near a surface of a first interconnect structure comprised of a first metal, a region of varied composition including the first metal and a second element. The method further includes forming a recess within the region of varied composition. The recess laterally extends a first distance along the surface and vertically extends a second distance below the first surface. The method further includes filling the recess with a second metal to form a second interconnect structure that contacts the first interconnect structure.

Abstract: A method of operating a memory circuit includes generating a first current in response to a first voltage. The first current includes a first set of leakage currents and a first write current. The method further includes generating, by a tracking circuit, a second set of leakage currents configured to track the first set of leakage currents of the first column of memory cells, and mirroring the first current in a first path with a second current in a second path by a first current mirror. The second current includes the second set of leakage currents and a second write current. The first write current corresponds to the second write current. The first set of leakage currents corresponds to the second set of leakage currents.

Abstract: A memory sector with trimmed reference currents, including eight unit cells corresponding to an even word line and eight unit cells corresponding to an odd word line, and each unit cell has erased state and programmed state, wherein the logic state of unit cell corresponding to the odd word line is determined by a first reference current based on cell currents of the 8 unit cells corresponding to the even word line in programmed state and cell currents of the eight unit cells corresponding to the odd word line in erased state, and the logic state of unit cell corresponding to the even word line is determined by a second reference current based on cell currents of the eight unit cells corresponding to the even word line in erased state and cell currents of the 8 unit cells corresponding to the odd word line in programmed state.

Abstract: In some aspects of the present disclosure, a memory device is disclosed. In some aspects, the memory device includes a first voltage regulator to receive a word line voltage provided to a memory array; a resistor network coupled to the first voltage regulator to provide an inhibit voltage to the memory array, wherein the resistor network comprises a plurality of resistors and wherein each of the resistors are coupled in series to an adjacent one of the plurality of resistors; and a switch network comprising a plurality of switches, wherein each of the switches are coupled to a corresponding one of the plurality of resistors and to the memory array via a second voltage regulator.

Abstract: A memory device includes a main array comprising main memory cells; a redundancy array comprising redundancy memory cells; and write circuitry configured to perform a first programming operation on a main memory cell, to detect whether a current of the main memory cell exceeds a predefined current threshold during the first programming operation, and to disable a second programming operation for a redundancy memory cell if the current of the main memory cell exceeds the predefined current threshold during the first programming operation.

Abstract: An optical detection device and an operation method thereof is disclosed. The optical detection device includes a light source, an optical coupling element, a reference optical path modulation element and a data processing element. The light source provides an incident light. The optical coupling element divides the incident light into a reference light and a detection light and emits them to the reference optical path modulation element and the sample to be tested respectively. The reference optical path modulation element reflects the reference light and rapidly changes the light path of reference light. The optical coupling element interferes the reference light reflected by the reference optical path modulation element and the detection light reflected by the sample to be tested to generate an optical interference signal. The data processing element receives and analyzes the optical interference signal to obtain an optical detection result about the sample to be tested.

Abstract: A multi-mode hybrid control DC-DC converting circuit has a switching power converter and a microcontroller. The switching power converter has a transformer and a switching switch. The switching switch is connected to a primary-side winding of the transformer in series. The microcontroller is connected to the switching power converter and a control terminal of the switching switch. The microcontroller sets multiple thresholds according to an input voltage of the switching power converter, and determines whether a feedback voltage of the switching power converter is higher or lower than each one of the thresholds to perform a variable-frequency mode, a constant-frequency mode, or a pulse-skipping mode. The microcontroller outputs a driving signal to the switching switch and correspondingly adjusts a frequency of the driving signal according to the variable-frequency mode, the constant-frequency mode, or the pulse-skipping mode which is performed.

Abstract: A self-driven active clamp circuit applied to a flyback converter having a transformer and a switch has a clamp switch and a resistor. The clamp switch is connected between a first capacitor and a second capacitor in series. Another terminal of the first capacitor is connected to a first terminal of a primary-side winding of the transformer. Another terminal of the second capacitor is connected to a second terminal of the primary-side winding of the transformer and the switch of the flyback converter. A terminal of the resistor is connected to a control terminal of the clamp switch. Another terminal of the resistor is connected to the second terminal of the primary-side winding of the transformer and the switch of the flyback converter.

Abstract: A system includes a charge pump system having a plurality of enable signal input terminals and an output terminal, the charge pump system configured to provide an output voltage at the output terminal; and a detection circuit connected to the enable terminals and the output terminal of the charge pump system, the detection circuit configured to compare the charge pump system output voltage to a plurality of predefined input detection voltage levels, and to selectively output a plurality of enable signals to the charge pump system enable signal input terminals in response to the comparison.

Abstract: A method of operating a memory circuit includes generating a first voltage by a first amplifier circuit of a first driver circuit coupled to a first column of memory cells, and generating a first current in response to the first voltage. The first current includes a first set of leakage currents and a first write current. The method further includes generating, by a tracking circuit, a second set of leakage currents configured to track the first set of leakage currents of the first column of memory cells, and mirroring the first current in a first path with a second current in a second path by a first current mirror. The second current includes the second set of leakage currents and a second write current. The first write current corresponds to the second write current. The first set of leakage currents corresponds to the second set of leakage currents.

Abstract: A memory device is provided, the memory device includes multiple cells arranged in a matrix of multiple rows and multiple columns. The memory device further includes multiple bit lines each of which is connected to first cells of the multiple cells arranged in a row of the multiple rows. A voltage control circuit is connectable to a selected bit line of the multiple bit lines and includes a voltage detection circuit that detects an instantaneous supply voltage and a voltage source selection circuit connected to the voltage detection circuit. The voltage source selection circuit selects a voltage source from multiple voltage sources based on the detected instantaneous supply voltage. The voltage source selection circuit includes a switch that connects the selected voltage source to the selected bit line to provide a write voltage.