Abstract: Disclosed is a reflow solderable positive temperature coefficient circuit protective device, comprising: an upper conductive blade terminal (1), which is composed of a first chip bonding portion (101), a first circuit bonding portion (105) and a connecting portion (103) therebetween, wherein the first chip bonding portion (101) has a first planar profile; a lower conductive blade terminal (2), which comprises a second chip bonding portion (201) having a second planar profile; a positive temperature coefficient chip, which is sandwiched between the upper conductive blade terminal (1) and the lower conductive blade terminal (2) and respectively bonded to the lower surface of the first chip bonding portion (101) and the upper surface of the second chip bonding portion (201) via solder, and has a third planar profile, wherein: the first planar profile and the second planar profile are in the interior of the third planar profile, and the third planar profile has portions that are not covered by the first planar pr

Abstract: A penetrating canaloplasty for treating angle-closure glaucoma that retains the advantages of canaloplasty, namely, internal drainage and non-bleb-dependence; the sclera is tightly sutured so as to avoid ocular hypotension and shallow anterior chamber complications; bleb-related complications such as postoperative infection and dry eye are avoided; since an inner wall of the Schlemm's canal is resected, it is possible to improve long-term success rates; indications are widened, including angle-closure glaucoma and all of glaucoma patients applicable to trabeculectomy. Traditional trabeculectomy forms blebs through outer filtering to reduce intraocular pressure, and the existence of blebs can influence postoperative living quality of patients.

Abstract: A reflow solderable positive temperature coefficient circuit protection device is provided, the device comprising: an electrically conductive sheet-like upper terminal composed of a first chip junction portion, a first circuit junction portion, and a connection portion therebetween, wherein the first chip junction portion having a first planar profile; an electrically conductive sheet-like lower terminal comprising a second chip junction portion having a second planar profile; and a positive temperature coefficient chip which is sandwiched between the sheet-like upper terminal and the sheet-like lower terminal, and respectively combined with the lower surface of the first chip junction portion and the upper surface of the second chip junction portion by soldering, and the positive temperature coefficient chip having a third planar profile.

Abstract: A semiconductor device includes: a fin-shaped structure on a substrate, in which a sidewall of the fin-shaped structure comprises a curve. Specifically, the fin-shaped structure includes a top portion and a bottom portion, a shallow trench isolation (STI) around the bottom portion of the fin-shaped structure, and the curve includes a planar portion extending from the top surface of fin-shaped structure downward and a curved portion extending from the bottom surface of the fin-shaped structure upward.

Abstract: One or more aspects of the present disclosure are directed to aqueous solutions that can be used to make substrates such as an article that can inhibit or limit one or more sources of odor. In an aspect, the aqueous solution can include one or more components, where one of the components is an inhibiting agent that can function to inhibit or limit the sources of odor in an article such as a textile.

Abstract: The present invention provides a conductive polymer composition, a conductive polymer sheet, an electrical device, and their preparation methods. The conductive polymer composition of the present invention includes a polymer and a conductive powder at a volume ratio of 35:65 to 65:35. The polymer includes at least one semicrystalline polymer selected from polyolefin, a copolymer of at least one olefin and at least one non-olefinic monomer copolymerizable therewith, and a thermoformable fluorine-containing polymer. The stated conductive powder includes at least one powder of a transition metal carbide, a transition metal carbon silicide, a transition metal carbon aluminide, and a transition metal carbon stannide. And the stated size distribution of the conductive powder satisfies: 20>D100/D50>6, where D50 denotes a corresponding particle size when a cumulative particle-size distribution percent in the conductive powder reaches 50%, and D100 denotes a maximum particle size.

Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.

Abstract: An eyeglass with angle of lens adjustable depending on multi focus lens includes a frame and two lenses. The frame is provided with a rim and two temples. The rim is provided with two rotating portions located at two opposite outer sides of the rim. Each temple is provided with a mounting portion pivotally connected to one of the rotating portions. The lenses are mounted to the rim symmetrically. In this connection, each lens is provided with a regular-prescription area having vision zones. The vision zones include a short-range vision zone, a middle-range vision zone and a long-range vision zone. When the present invention is used, the rotational cooperation of the short-range vision zone, middle-range vision zone and long-range vision zone with the temples is utilized, so as to solve the problem of incapability of aligning lenses in the conventional practice with eyes suffering from presbyopia.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. The gate structure includes a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a spacer formed on side surfaces of the gate dielectric layer and the gate electrode. A laterally extending portion of the epitaxial structure extends laterally at an area below a top surface of the semiconductor substrate in a direction toward an area below the gate structure. A lateral end of the laterally extending portion is below the spacer.

Abstract: A penetrating canaloplasty for treating angle-closure glaucoma that retains the advantages of canaloplasty, namely, internal drainage and non-bleb-dependence; the sclera is tightly sutured so as to avoid ocular hypotension and shallow anterior chamber complications; bleb-related complications such as postoperative infection and dry eye are avoided; since the inner wall of the Schlemm's canal is resected, it is possible to improve long-term success rate; indications are widened, including angle-closure glaucoma and all of glaucoma patients applicable to trabeculectomy. Traditional trabeculectomy forms blebs via outer filtering to reduce intraocular pressure, and the existence of blebs can influence postoperative living quality of patients.

Abstract: A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. A vertically extending portion of the epitaxial structure extends vertically above a top surface of the semiconductor substrate in an area adjacent the gate structure. A laterally extending portion of the epitaxial structure extends laterally at an area below the top surface of the semiconductor substrate in a direction toward an area below the gate structure and beyond an area where the epitaxial structure extends vertically. The device further includes an interlayer dielectric layer between a side surface of the vertically extending portion of the epitaxial structure and a side surface of the gate structure. A top surface of the laterally extending portion of the epitaxial structure directly contacts the interlayer dielectric layer.

Abstract: In certain aspects, the invention provides crystalline forms of olaparib (4-[(3-[(4-cyclopropylcarbonyl)piperazin-4-yl]carbonyl)-4-fluorophenyl]methyl(2H)phthalazin-1-one). In related aspects, the invention provides processes for preparing the crystalline forms of olaparib. The processes include: forming a solution comprising crude olaparib and an organic solvent; adding an anti-solvent to the solution to form a slurry comprising a precipitate; isolating the precipitate; and drying the precipitate to obtain a crystalline form I of olaparib or a crystalline form II of olaparib.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. A vertically extending portion of the epitaxial structure extends vertically above a top surface of the semiconductor substrate in an area adjacent the gate structure. A laterally extending portion of the epitaxial structure extends laterally at an area below the top surface of the semiconductor substrate in a direction toward an area below the gate structure and beyond an area where the epitaxial structure extends vertically. The device further includes an interlayer dielectric layer between a side surface of the vertically extending portion of the epitaxial structure and a side surface of the gate structure. A top surface of the laterally extending portion of the epitaxial structure directly contacts the interlayer dielectric layer.

Abstract: An adjustable hanging device for securing an electronic device and being capable of angular adjustment is provided. One control screw is disposed for the operation along one dimension. When the adjustable hanging device is used for multi-dimensional angular adjustments, the control screws are disposed to extend to one operational side. Due to the mechanical integration and the compact design of the adjustable hanging device, the advantages of volume reduction and simpler manipulation at one operational side would be expectable.

Abstract: Package-on-Package (PoP) structures and methods of forming the same are disclosed. In some embodiments, a method of forming a PoP structure may include: plating at least one through-assembly via (TAV) over a peripheral region of a conductive seed layer; forming a dam member over a central region of the conductive seed layer; and placing a die over the central region of the conductive seed layer. The dam member may be laterally separated from the die and disposed between the die and the at least one TAV. The method may further include encapsulating the die, the dam member, and the at least one TAV in a polymer material.

Abstract: A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor includes a substrate, two source/drain regions, a gate structure and two salicide layers. The two source/drain regions are partially disposed in the substrate each with a substantially flat top surface higher than a top surface of the substrate, and the two source/drain regions are separated from each other. The two source/drain regions are formed of an epitaxial material. The gate structure is disposed on the substrate between the two source/drain regions. The two salicide layers are disposed on the substantially flat top surfaces of the two source/drain regions, respectively.

Abstract: The present invention provides novel crystalline forms of apremilast hemitoluene solvate, apremilast hydrate, and apremilast anhydrate and an amorphous form of apremilast, and processes for the preparation of these forms.

Abstract: The present invention provides compounds of Formula (I) as described herein, and salts thereof, and therapeutic uses of these compounds for treatment of disorders associated with Raf kinase activity. The invention further provides pharmaceutical compositions comprising these compounds, and compositions comprising these compounds and a therapeutic co-agent.